专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3718134A1 THREE DIMENSIONAL INTEGRATED CIRCUIT 审中-公开
公开(公告)号：EP3718134A1
公开(公告)日：2020-10-07
申请号：EP18883845.2
申请日：2018-11-30
申请人： Silicon Genesis Corporation
发明人： FONG, Theodore E. , CURRENT, Michael I.
IPC分类号： H01L21/822

2. 发明授权

EP1212787B1 A CLEAVING PROCESS TO FABRICATE MULTILAYERED SUBSTRATES USING LOW IMPLANTATION DOSES 有权
标题翻译：分裂过程生产具有低剂量注入多层基板
公开(公告)号：EP1212787B1
公开(公告)日：2014-10-08
申请号：EP00957429.4
申请日：2000-08-10
申请人： Silicon Genesis Corporation
发明人： HENLEY, Francois, J. , BRYAN, Michael, A. , EN, William, G.
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , H01L21/26506 , H01L21/76254

3. 发明公开

EP1997124A2 METHOD AND STRUCTURE FOR FABRICATING SOLAR CELLS 审中-公开
标题翻译：方法与结构太阳能电池的生产
公开(公告)号：EP1997124A2
公开(公告)日：2008-12-03
申请号：EP07758733.5
申请日：2007-03-16
申请人： Silicon Genesis Corporation
发明人： HENLEY, Francois, J. , ONG, Philip, James
IPC分类号： H01L21/00 , H01L25/00 , H01L31/00 , H02N6/00
CPC分类号： H01L31/1804 , H01L31/0232 , H01L31/0392 , H01L31/03925 , H01L31/0725 , H01L31/0745 , H01L31/077 , H01L31/1872 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.

4. 发明公开

EP1735142A2 AN APPARATUS AND METHOD FOR CONTROLLED CLEAVING 审中-公开
标题翻译：用于控制切割的装置和方法
公开(公告)号：EP1735142A2
公开(公告)日：2006-12-27
申请号：EP05711334.2
申请日：2005-01-10
申请人： Silicon Genesis Corporation
发明人： HENLEY, Francois, J. , TEOH, Hongbee , PALER, Anthony , LAMM, Albert , ONG, Philip
IPC分类号： B32B1/00
CPC分类号： H01L21/67092 , B28D5/00 , H01L21/76251 , Y10T156/1928
摘要： An Apparatus and method for controlled cleaving is presented. Embodiments of the present invention include an apparatus for cleaving a substrate comprising a bottom shell coupled to a hinge mechanism, a top shell coupled to the hinge mechanism, a plurality of o-rings or suction cups coupled to the top and bottom shells for providing a suction force sufficient to exert a tensile force to the top and bottom of a substrate, a compliant member for sealing a portion of a grove edge of a substrate and for maintaining a pressure inside a volume formed between the groove edge and the groove edge of the substrate, a gas port for supplying gas to the volume, and a height adjustment mechanism coupled to the top shell and the bottom shell for separating the top shell from the bottom shell. One embodiment of the invention eliminates the use of gas system and is replaced by a blade edge to initiate propagation and applied tensile force of suction cups to apply tensile forces prior to initiation, control cleave process and maintain layer separation during and after cleaving.
摘要翻译：提出了一种用于受控切割的装置和方法。本发明的实施例包括用于劈开基板的设备，该设备包括耦合到铰链机构的底壳，耦合到铰链机构的顶壳，耦合到顶壳和底壳的多个O形环或吸盘，用于提供足以向衬底的顶部和底部施加张力的抽吸力;用于密封衬底的凹槽边缘的一部分并且用于保持凹槽边缘与凹槽边缘之间形成的体积内的压力的柔性构件衬底，用于将气体供应到体积的气体端口以及联接到顶部壳体和底部壳体以用于将顶部壳体与底部壳体分离的高度调节机构。本发明的一个实施例消除了气体系统的使用，并由刀刃代替以启动传导并施加拉力，以在开始之前施加拉力，控制切割过程并在切割期间和切割之后维持层分离。

5. 发明授权

EP0842307B1 SYSTEM FOR THE PLASMA TREATMENT OF LARGE AREA SUBSTRATES 失效
标题翻译：系统的等离子处理大面积衬底
公开(公告)号：EP0842307B1
公开(公告)日：2002-11-27
申请号：EP96922642.2
申请日：1996-07-02
申请人： Silicon Genesis Corporation
发明人： Chan, Chung
IPC分类号： C23C16/00 , C23F1/02
CPC分类号： H01J37/20 , H01J37/32082 , H01J37/32935
摘要： A plasma system (10) for processing large area substrates. In one embodiment the system includes a plurality of radiofrequency (rf) plasma sources (40) removably attached to the rf transparent windows (26) of a processing chamber (14). The number and distribution of sources is varied to provide the size and uniformity of the plasma field required to treat the substrate. A plurality of plasma probes (74), such as Langmuir probes, Faraday cups and optical sensor are positioned within the chamber and in electrical communication with the plasma sources adjust the rf field produced by the individual sources to maintain the desired degree of field uniformity.

6. 发明公开

EP1194949A1 SURFACE FINISHING OF SOI SUBSTRATES USING AN EPI PROCESS 有权
标题翻译：通过外延PROCEDURE的SOI衬底的表面处理
公开(公告)号：EP1194949A1
公开(公告)日：2002-04-10
申请号：EP00926275.9
申请日：2000-04-20
申请人： Silicon Genesis Corporation
发明人： KANG, Sien G. , MALIK, Igor, J.
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/3065 , H01L21/2007 , H01L21/76254 , Y10S438/967
摘要： A method for finishing substrates. The method comprises providing a substrate having a cleaved surface which has a first surface roughness value, performing a hydrogen treatment to increase the hydrogen concentration of the cleaved surface, and performing an etchant and thermal treatment. The etchant and thermal treatment comprises increasing a temperature of a hydrogen bearing environment to greater than about 1,000° Celsius and subjecting the cleaved surface to the environment to reduce the surface roughness value by at least eighty percent. The hydrogen bearing environment includes an HCI gas and a hydrogen gas. The cleaved surface after treatment is substantially smooth.

7. 发明公开

EP2084948A2 APPARATUS AND METHOD FOR INTRODUCING PARTICLES USING A RADIO FREQUENCY QUADRUPOLE LINEAR ACCELERATOR FOR SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：装置和方法引入颗粒使用RF四极直线加速器半导体材料的
公开(公告)号：EP2084948A2
公开(公告)日：2009-08-05
申请号：EP07864146.1
申请日：2007-11-08
申请人： Silicon Genesis Corporation
发明人： HENLEY, Francois J. , LAMM, Albert , ADIBI, Babak
IPC分类号： H05H7/00 , H01L21/425
CPC分类号： H05H7/10 , H01J37/04 , H01J37/3171 , H01J2237/04737 , H01L21/26506 , H05H7/04 , H05H9/00
摘要： A system for forming one or more detachable semiconductor films capable of being free-standing. The apparatus includes an ion source to generate a plurality of collimated charged particles at a first energy level. The system includes a linear accelerator having a plurality of modular radio frequency quadrupole (RFQ) elements numbered from 1 through N successively coupled to each other, where N is an integer greater than 1. The linear accelerator controls and accelerates the plurality of collimated charged particles at the first energy level into a beam of charge particles having a second energy level. RFQ element numbered 1 is operably coupled to the ion source. The system includes an exit aperture coupled to RFQ element numbered N of the RFQ linear accelerator. In a specific embodiment, the system includes a beam expander coupled to the exit aperture, the beam expander being configured to process the beam of charged particles at the second energy level into an expanded beam of charged particles. The system includes a process chamber coupled to the beam expander and a workpiece provided within the process chamber to be implanted.

8. 发明公开

EP1144717A1 ENHANCED PLASMA MODE, METHOD, AND SYSTEM FOR PLASMA IMMERSION ION IMPLANTATION 审中-公开
标题翻译：改进的等离子体模式和等离子体浸没离子注入的方法和系统
公开(公告)号：EP1144717A1
公开(公告)日：2001-10-17
申请号：EP99960595.9
申请日：1999-11-23
申请人： Silicon Genesis Corporation
发明人： LIU, Wei , ROTH, Ian, S. , BRYAN, Michael, A.
IPC分类号： C23C16/00
CPC分类号： H01J37/321 , C23C14/48 , H01J37/3266 , H01J37/32688
摘要： A novel plasma treatment method (800, 814) and system (10). The method and system form an rf plasma discharge in a vacuum chamber (14). The plasma discharge includes an inductive coupling structure (211, 213), which has a first cusp region (217) at a first end of the structure and a second cusp (219) region at a second end of the structure. In some embodiments, a third cusp region, which is between the first and second cusp regions, can also be included (218). The first cusp region is provided by a first electro-magnetic source (207) and the second cusp region is provided by a second electro-magnetic source (209). The first electro-magnetic source (207) and the second electro-magnetic source (209) confine a substantial portion of the rf plasma discharge to a region away from a wall of the vacuum chamber (14). Accordingly, a plasma discharge is substantially a single ionic species (e.g., H1+) can be formed.

9. 发明授权

EP2845220B1 TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES 有权
公开(公告)号：EP2845220B1
公开(公告)日：2020-02-12
申请号：EP13784851.1
申请日：2013-05-03
申请人： Silicon Genesis Corporation
发明人： HENLEY, Francois J. , KANG, Sien , LAMM, Albert
IPC分类号： H01L21/30 , H01L21/762 , H01L29/20 , H01L21/02 , C30B29/40 , C30B33/06

10. 发明公开

EP2845220A1 TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES 审中-公开
标题翻译：形成光电子器件的技术
公开(公告)号：EP2845220A1
公开(公告)日：2015-03-11
申请号：EP13784851.1
申请日：2013-05-03
申请人： Silicon Genesis Corporation
发明人： HENLEY, Francois J. , KANG, Sien , LAMM, Albert
IPC分类号： H01L21/30
CPC分类号： H01L33/0079 , C30B29/06 , C30B29/406 , C30B33/06 , H01L21/02005 , H01L21/76254 , H01L21/78 , H01L29/2003 , H01L31/028 , H01L31/03044 , H01L31/1804 , H01L31/1856 , H01L33/0054 , H01L33/32 , H01L33/34 , H01S5/3013 , H01S5/3027
摘要： Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise (111) single crystal silicon. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices.
摘要翻译：描述了实施例涉及使用粒子加速器束来形成来自块状衬底的材料的薄膜。在特定实施例中，具有顶表面的体衬底暴露于加速粒子束。在某些实施例中，该体衬底可以包括GaN; 在其他实施例中，该体衬底可以包括（111）单晶硅。然后，通过沿着由从所述束注入的粒子形成的解理区域执行受控劈裂过程，将薄膜或晶片材料从所述块衬底分离。在某些实施例中，将该分离的材料直接结合到光电子器件中，例如从GaN大块材料切割的GaN膜。在一些实施例中，这种分离的材料可以用作用于进一步生长可用于光电子器件的半导体材料（例如GaN）的模板。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式