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    • 2. 发明公开
    • Process for realization of polymeric materials with second order nonlinear electro-optical properties and electro-optical devices made with said material
    • 一种制备聚合物材料的与第二阶非线性的电光特性,和电光装置由这种材料制造的过程
    • EP2468784A3
    • 2013-04-17
    • EP11425299.2
    • 2011-12-16
    • Selex Sistemi Integrati S.p.A.
    • Borbone, FabioRoviello AntonioCentore RobertoCarella AntonioDe Matteis FabioCasalboni MauroStracci GlaucoDispenza Massimiliano
    • C08G18/10C08G18/16C08G18/38C08G18/76G02F1/361
    • G02F1/361C08G18/10C08G18/32C08G18/3836C08G18/384C08G18/7621C08G18/7657G02F1/3615
    • Process for realization of polymeric materials with second order nonlinear electro-optical properties and electro-optical devices made with said material
      The present concerns a process for realization of polymeric materials with second order nonlinear electro-optical properties comprising the following steps:
      - mixing of a chromophore with nonlinear optical properties with two or three hydroxy groups in an isocyanate not reactive solvent containing an isocyanate compound with at least two isocianate groups in order one or more bi- or tri-isocyanate NLO chromophores to be obtained;
      - isolation of said pure bi- or tri-isocyanate NLO chromophores obtained according to the above step;
      - dissolution of said bi- or tri-isocyanate NLO chromophores obtained according to the above step in one or more isocyanate group not reactive solvents containing reactive substances consisting of acyl-substituted or unsubstituted formamides and/or acylamides bearing as nitrogen substituents, independently, one or more hydrogen atoms, one or more alkyls substituted or unsubstituted with isocyanate moiety not reactive groups, one or more phenyl groups substituted or unsubstituted with isocyanate moiety not reactive groups, in order to obtain a prepolymer mixture consisting of said not reactive solvents and reaction products of said NLO bi- or tri-isocyanate chromophores and said reactive substances;
      - coating of a thin layer of said prepolymer mixture on a substrate and evaporation of said not reactive solvents;
      - cross-linking and poling of said thin layer on substrate, by means of heating and application of an electric field, in order a cross-linked and poled thin layer to be obtained;
      - cooling of said thin cross-linked and poled layer at ambient temperature maintaining the applied poling electric field;
      - switching off the poling electric field.
      The invention further concerns a process for the realization of an electro-optical device by definition of optical paths and driving electrodes in a polymeric material with second order nonlinear properties, comprising, following the steps of realization of said polymeric material with second order nonlinear electro-optical properties as previously defined, a step set of photolithographic definition and ionic erosion of said polymeric material, after a step for coating of a protecting buffer layer on said polymeric material layer, so as to maintain constantly embedded said layer of polymeric material in the areas involved in optical path realization during all the successive photolithographic definition and ionic erosion steps.
    • 4. 发明公开
    • Calibration of active electronically scanned array (aesa) antennas
    • Kalibrierung einer aktiven,elektronisch abtastenden Array Antenne
    • EP2469651A1
    • 2012-06-27
    • EP11195453.3
    • 2011-12-22
    • Selex Sistemi Integrati S.p.A.
    • Mosca, StefanoMarchetti, Massimo
    • H01Q3/26H01Q21/06
    • H01Q3/267H01Q21/064
    • The present invention concerns an active electronically scanned array antenna (2) comprising: an active array (25), configured for radiating/receiving radiofrequency (RF) signals through first radiating openings (21a) that lie on a ground plane (22); and a dielectric cover (23) arranged at a given distance (D) from the ground plane (22) so that between said dielectric cover (23) and said ground plane (22) an air gap (24) is present. Said active electronically scanned array antenna (2) is characterized in that it further comprises one or more calibration devices (3) operable for calibrating said active electronically scanned array antenna (2), each calibration device (3) comprising a respective radiating portion (31) arranged between the dielectric cover (23) and the ground plane (22) and configured for receiving radiofrequency (RF) signals radiated through corresponding first radiating openings (21a) and for radiating radiofrequency (RF) signals in the air gap (24) towards said corresponding first radiating openings (21a).
    • 本发明涉及一种有源电子扫描阵列天线(2),包括:有源阵列(25),被配置为通过位于接地平面(22)上的第一辐射开口(21a)辐射/接收射频(RF)信号; 以及电介质盖(23),其从所述接地平面(22)以给定距离(D)布置,使得在所述电介质盖(23)和所述接地平面(22)之间存在气隙(24)。 所述有源电子扫描阵列天线(2)的特征在于,其还包括一个或多个可操作用于校准所述有源电子扫描阵列天线(2)的校准装置(3),每个校准装置(3)包括相应的辐射部分 )被布置在电介质盖(23)和接地平面(22)之间,并且被配置用于接收通过对应的第一辐射开口(21a)辐射的射频(RF)信号,并且用于将气隙(24)中的射频(RF)信号朝向 所述对应的第一辐射开口(21a)。
    • 6. 发明公开
    • Vertikale PIN-Dioden和Verfahren zur Herstellung
    • EP2400529A2
    • 2011-12-28
    • EP11171779.9
    • 2011-06-28
    • Selex Sistemi Integrati S.p.A.
    • Peroni, MarcoPantellini, Alessio
    • H01L21/329H01L29/417H01L29/868
    • H01L29/868H01L29/417H01L29/6609H01L29/66204
    • The invention concerns a method of manufacturing a vertical PIN diode (30) comprising: providing an epitaxial wafer comprising a vertically stacked N-type layer (32), intrinsic layer (33) and P-type layer (34); forming an anode contact of the vertical PIN diode (30) by forming an anode metallization (35) on a first portion of the P-type layer defining an anode region (34a); forming an electrically insulating layer (36) around the anode region (34a) such that a first portion of the intrinsic layer (33) extends vertically between the N-type layer (32) and the anode region (34a) and second portions of the intrinsic layer (33) extend vertically between the N-type layer (32) and the electrically insulating layer (36); forming a trench (38) in the electrically insulating layer (36) and in the second portions of the intrinsic layer (33) so as to expose a portion of the N-type layer (32) defining a cathode region and to define a sacrificial side-guard ring (36a) consisting of a portion of the electrically insulating layer (36) that extends laterally between the trench (38) and the anode region (34a) and laterally surrounds said anode region (34a); and forming a cathode contact of the vertical PIN diode (30) by forming a cathode metallization (39) on the exposed portion of the N-type layer (32) defining the cathode region.
    • 本发明涉及一种制造垂直PIN二极管(30)的方法,包括:提供包括垂直层叠的N型层(32),本征层(33)和P型层(34)的外延晶片; 通过在限定阳极区域(34a)的P型层的第一部分上形成阳极金属化(35)来形成垂直PIN二极管(30)的阳极接触; 在所述阳极区域(34a)周围形成电绝缘层(36),使得所述本征层(33)的第一部分在所述N型层(32)和所述阳极区域(34a)之间垂直延伸,并且所述第二部分 本征层(33)在N型层(32)和电绝缘层(36)之间垂直延伸; 在所述电绝缘层(36)和所述本征层(33)的第二部分中形成沟槽(38),以暴露限定阴极区域的所述N型层(32)的一部分并且限定牺牲层 由所述电绝缘层(36)的在所述沟槽(38)和所述阳极区域(34a)之间横向延伸并横向包围所述阳极区域(34a)的部分组成的侧保护环(36a); 以及通过在限定阴极区域的N型层(32)的暴露部分上形成阴极金属化(39),形成垂直PIN二极管(30)的阴极接触。
    • 7. 发明公开
    • SWITCHABLE DELAYS OPTICAL FIBRE TRANSPONDER WITH OPTICAL GENERATION OF DOPPLER SHIFT
    • 与多普勒频移光生可切换延误光纤转发器
    • EP2324390A1
    • 2011-05-25
    • EP08876051.7
    • 2008-09-18
    • Selex Sistemi Integrati S.p.A.
    • PIERNO, LuigiVARASI, Mauro
    • G02F2/02G01S7/40G01S13/76H01Q3/26H04B10/155
    • G02F2/02G01S7/4052G01S13/767G01S2007/4095G02F1/2255H01Q3/267H01Q3/2676
    • The invention concerns an optical modulator, comprising an input suitable to receive an optical carrier, a high- frequency microwave input and an output suitable to transmit an optical signal, the optical modulator comprising two Mach-Zender (1,2) modulators in parallel between the input and output so as to constitute two different optical paths within a third Mach-Zender modulator (3), the optical modulator being characterised in that: - the first Mach-Zender modulator (1) is provided with an electrode suitable to apply two microwave signals (RFl, RF2) obtained by the sum of the two tones fR and fD of equal power, the signals being dephased by pi/2, the modulator (1) being further provided with an electrode (Bias 1) for realising a single side band modulation of the tones fR and fp; - the second Mach-Zender modulator (2) is provided with an electrode (Bias 2) to vary the phase and the amplitude of the optical carrier; the third Mach-Zender modulator (3) comprises an electrode • (Bias 3) suitable to realise the summation of the signals deriving from the first (1) and the second (2) Mach-Zender modulator before the output, so as to suppress the optical carrier and thus obtain only the tones fR and fo in the optical spectrum. The invention further concerns an optical generator of Doppler frequency, an optical link for the generation of a variable optical delay and a transponder, in particular for the calibration, the test and the performances test of a radar, in particular a phased-array radar, that uses the optical modulator according to the invention.
    • 10. 发明公开
    • Interferometer and method for controlling the coalescence of a pair of photons
    • 干涉仪和控制一对光子聚合的方法
    • EP2543957A8
    • 2013-05-22
    • EP12175470.9
    • 2012-07-06
    • Selex Sistemi Integrati S.p.A.
    • Bovino, Fabio Antonio
    • G01B9/02
    • G01B9/02001G01B9/02014G01B2290/55H04L9/0852
    • An interferometer for controlling the coalescence of a pair of photons, including: an optical source (51,52), which generates a first and a second pump pulse coherent with each other and shifted in time by a delay (τ); and a first interferometric stage (I a ), which receives the first pump pulse and generates an antisymmetric state with two coalescent photons 1 / 2 ( | 2 1 , 0 2 〉 - | 0 1 , 2 2 〉 . The interferometer also includes a second interferometric stage (I s ), which receives the second pump pulse and generates a symmetric state with two coalescent photons 1 / 2 ⋅ | 2 1 , 0 2 〉 + | 0 1 , 2 2 〉 , the first and the second interferometric stages being connected in a manner such that the interferometer outputs a final state equal to a weighted sum of the antisymmetric state and of the symmetric state 1 / 2 ⋅ | 2 1 , 0 2 〉 + | 0 1 , 2 2 〉 + e iτ ⋅ 1 / 2 ⋅ ⁢ | 2 1 , 0 2 〉 - | 0 1 , 2 2 〉 , the weights of the sum being a function of the delay.
    • 一种用于控制一对光子聚合的干涉仪,包括:一个光源(51,52),它产生彼此相干并且在时间上延迟一个延迟(τ)的第一和第二泵浦脉冲; 和第一干涉仪阶段(Ia),其接收第一泵浦脉冲并且产生具有两个聚结光子1/2(| 21,02> - | 01,22>)的反对称状态。干涉仪还包括第二干涉测量级(Is) ,其接收第二泵浦脉冲并且产生具有两个聚结光子的对称状态,第一和第二干涉仪级以这样的方式连接,使得干涉仪输出最终的 状态等于反对称状态和对称状态的加权和1 /2⋅| 21,02> + | 01,22> +eiτ⋅1/2⋅| 21,02> - | 01,22>,则 总和的权重是延迟的函数。