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    • 3. 发明公开
    • Photovoltaic device and method for manufacturing thereof
    • Fotovoltaische Vorrichtung und Verfahren zu deren Herstellung
    • EP2282352A2
    • 2011-02-09
    • EP10172122.3
    • 2010-08-06
    • KISCOKorea Advanced Institute of Science and Technology
    • Lim, Koeng SuJeon, Jin-Wan
    • H01L31/18H01L31/0224H01L27/142
    • H01L31/03923H01L31/022425H01L31/0392H01L31/03925H01L31/0463H01L31/0465H01L31/076Y02E10/541Y02E10/548Y02P70/521
    • Disclosed is a method for manufacturing a photovoltaic device. The method for manufacturing a photovoltaic device comprises providing substrates having trenches (101,102,103,104) formed therein, forming a first electrode layer (110), and forming an auxiliary electrode layer (120) in areas between the trenches such that the auxiliary electrode layer is located on or under the first electrode layer, the auxiliary electrode layer having electrical resistance less than that of the first electrode layer, and contacting with a portion of an area of the first electrode layer, forming a photovoltaic layer (130) on the first electrode layer or the auxiliary electrode layer, forming a second electrode layer (140) by obliquely depositing a second conductive material on the photovoltaic layer, etching the photovoltaic layer formed in the trenches such that the first electrode layer or the auxiliary electrode layer arc exposed and forming a conductive layer (160) by obliquely depositing a third conductive material on the second electrode layer such that the second electrode layer and either the first electrode layer or the auxiliary electrode layer are electrically connected to each other within the trench, the first electrode layer or the auxiliary electrode layer formed in one area generating electricity from light, and the second electrode layer formed in another area generating electricity from light.
    • 公开了一种用于制造光伏器件的方法。 制造光伏器件的方法包括提供在其中形成有沟槽(101,102,103,104)的衬底,形成第一电极层(110),以及在沟槽之间的区域中形成辅助电极层(120),使得辅助电极层位于 或者在第一电极层的下方,辅助电极层的电阻小于第一电极层的电阻,并与第一电极层的一部分区域接触,在第一电极层上形成光伏层(130),或 所述辅助电极层通过在所述光伏层上倾斜地沉积第二导电材料形成第二电极层(140),蚀刻形成在所述沟槽中的所述光电层,使得所述第一电极层或所述辅助电极层电弧暴露并形成导电 (160),通过在第二电极层上倾斜地沉积第三导电材料, 所述第一电极层或所述辅助电极层在所述沟槽内彼此电连接,所述第一电极层或辅助电极层形成在从光产生电的一个区域中,并且所述第二电极层形成在另一个区域中 区域发光从光。
    • 8. 发明公开
    • Photovoltaic device and manufacturing method thereof
    • Photovoltaikvorrichtung und Herstellungsverfahrendafür
    • EP2273563A2
    • 2011-01-12
    • EP10160268.8
    • 2010-04-19
    • KISCO
    • Myong, Seung-Yeop
    • H01L31/075H01L31/18H01L31/0368H01L31/0376
    • H01L31/03687H01L31/03765H01L31/076H01L31/1816H01L31/1824Y02E10/545Y02E10/548Y02P70/521
    • Disclosed is a photovoltaic device. The photovoltaic device includes:
      a substrate;
      a first electrode disposed on the substrate;
      at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and
      a second electrode disposed on the photoelectric transformation layer,
      wherein the light absorbing layer includes the first sub-layer and the second sub-layer, the first sub-layer including hydrogenated micro-crystalline silicon germanium (µc-SiGe:H) and an amorphous silicon germanium network (a-SiGe:H) formed among the hydrogenated micro-crystalline silicon germaniums, the second sub-layer including hydrogenated micro-crystalline silicon (µc-Si:H) and an amorphous silicon network (a-Si:H) formed among the hydrogenated micro-crystalline silicons.
    • 公开了一种光伏器件。 光伏器件包括:衬底(100); 设置在所述基板上的第一电极(210) 设置在所述第一电极上的至少一个光电转换层(230),所述光电转换层包括光吸收层(233); 和设置在所述光电转换层上的第二电极,其中所述光吸收层包括所述第一子层和所述第二子层,所述第一子层包括氢化微层, 晶体硅锗(μc-SiGe:H)和在氢化微晶硅锗之间形成的非晶硅锗网络(a-SiGe:H),第二子层(233b)包括氢化微晶硅(μc- Si:H)和在氢化微晶硅中形成的非晶硅网络(a-Si:H)。