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1. 发明授权

EP1046613B1 Method of forming carbon nanotubes 有权
标题翻译：一种用于生产碳纳米管的过程
公开(公告)号：EP1046613B1
公开(公告)日：2005-02-09
申请号：EP00303469.1
申请日：2000-04-25
申请人： Jin Jang , cDREAM CORPORATION
发明人： Jang, Jin , Chung, Suk-Jae Dept. of Physics
IPC分类号： C01B31/00 , C01B31/02
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B32/162 , C01B32/17 , H01J2201/30469 , Y10S977/742 , Y10S977/843 , Y10S977/844 , Y10S977/888

2. 发明公开

EP1061544A1 Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter. 审中-公开
标题翻译：具有碳纳米管薄膜，制备方法场发射器，并使用该发射极的场致发射显示装置
公开(公告)号：EP1061544A1
公开(公告)日：2000-12-20
申请号：EP00304962.4
申请日：2000-06-13
申请人： Iljin Nanotech Co., Ltd. , Jin Jang
发明人： Jang, Jin , Chung, Suk-Jae
IPC分类号： H01J1/30 , H01J9/02 , H01J31/12
CPC分类号： B82Y10/00 , H01J1/304 , H01J9/025 , H01J31/127 , Y10S977/721 , Y10S977/723 , Y10S977/742 , Y10S977/843 , Y10S977/844 , Y10S977/888
摘要： A field emitter having a high current density even at a low voltage using a carbon nanotube film, a method of manufacturing the same, and a field emission display device having the field emitter, are provided. The field emitter includes an insulating substrate (8), a thin film transistor formed on the insulating substrate, the thin film transistor having a semiconductor layer (7), a source electrode (3), a drain electrode (4) and a gate electrode (2), and an electron emitting unit formed of a carbon nanotube film (1) on the drain electrode of the thin film transistor. The thin film transistor can be a coplanar-type transistor, a stagger-type transistor, or an inverse stagger-type transistor. The surface of a portion of the drain electrode, which contacts the carbon nanotube film, contains catalytic metal which is transition metal such as nickel or cobalt. Alternatively, the drain electrode itself can be formed of catalytic metal for carbon nanotube growth.
摘要翻译：使用碳纳米管的电影，其制造方法，以及具有该场发射器的场发射显示装置，即使在低电压下具有高电流密度的场发射器中，提供了。场致发射体包括在绝缘基片（8），薄膜晶体管形成在绝缘基板中，具有半导体层的薄膜晶体管（7），源电极（3），漏电极（4）和栅极电极（2），并且在电子发射部形成的碳纳米管片（1）上的薄膜晶体管的漏电极的。薄膜晶体管可以是共面型晶体管，一交错型晶体管或在逆交错型晶体管。漏电极，其接触碳纳米管电影，的部分的表面含有催化金属的所有其是过渡金属：如镍或钴。可替代地，漏极电极本身可以形成用于生长碳纳米管的催化金属。

3. 发明公开

EP1046613A2 Method of forming carbon nanotubes 有权
标题翻译： Verfahren zur Herstellung vonKohlenstoffnanoröhre
公开(公告)号：EP1046613A2
公开(公告)日：2000-10-25
申请号：EP00303469.1
申请日：2000-04-25
申请人： Iljin Nanotech Co., Ltd. , Jin Jang
发明人： Jang, Jin , Chung, Suk-Jae Dept. of Physics
IPC分类号： C01B31/00
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B32/162 , C01B32/17 , H01J2201/30469 , Y10S977/742 , Y10S977/843 , Y10S977/844 , Y10S977/888
摘要： An easy method of forming purified carbon nanotubes from which graphitic phase or carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown on a substrate using a plasma chemical vapor deposition method at a high plasma density of 10 11 cm -3 or more. The carbon nanotube formation includes: growing a carbon nanotube layer on a substrate to have a predetermined thickness by plasma deposition; purifying the carbon nanotube layer by plasma etching; and repeating the growth and the purification of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for example, a carbon tetrafluoride gas, is #used as a source gas.
摘要翻译：形成碳纳米管的方法包括通过等离子体沉积在基板上生长具有预定厚度的碳纳米管层，通过等离子体蚀刻来纯化该层，并重复碳纳米管层的生长和纯化。

4. 发明公开

EP1046613A3 Method of forming carbon nanotubes 有权
标题翻译：一种用于生产碳纳米管的过程
公开(公告)号：EP1046613A3
公开(公告)日：2002-01-23
申请号：EP00303469.1
申请日：2000-04-25
申请人： Iljin Nanotech Co., Ltd. , Jin Jang
发明人： Jang, Jin , Chung, Suk-Jae Dept. of Physics
IPC分类号： C01B31/00 , C01B31/02
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B32/162 , C01B32/17 , H01J2201/30469 , Y10S977/742 , Y10S977/843 , Y10S977/844 , Y10S977/888
摘要： An easy method of forming purified carbon nanotubes from which graphitic phase or carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown on a substrate using a plasma chemical vapor deposition method at a high plasma density of 10 11 cm -3 or more. The carbon nanotube formation includes: growing a carbon nanotube layer on a substrate to have a predetermined thickness by plasma deposition; purifying the carbon nanotube layer by plasma etching; and repeating the growth and the purification of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for example, a carbon tetrafluoride gas, is #used as a source gas.

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