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1. 发明公开

EP3155667A4 WAFER SCALE MONOLITHIC CMOS-INTEGRATION OF FREE-AND NON-FREE-STANDING METAL- AND METAL ALLOY-BASED MEMS STRUCTURES IN A SEALED CAVITY AND METHODS OF FORMING THE SAME 有权转让
公开(公告)号：EP3155667A4
公开(公告)日：2018-01-31
申请号：EP15809355
申请日：2015-06-10
申请人： INSENSE INC
IPC分类号： H01L29/84
CPC分类号： B81C1/0023 , B81B7/02 , B81C1/00246 , H01L2224/05014
摘要： An assembly of metallic MEMS structures directly fabricated on planarized CMOS substrates, containing the application-specific integrated circuit (ASIC), by direct deposition and subsequent microfabrication steps on the ASIC interconnect layers, with integrated capping for packaging, is provided. The MEMS structures comprise at least one MEMS device element, with or without moveable parts anchored on the CMOS ASIC wafer with electrical contact provided via the metallic interconnects of the ASIC. The MEMS structures can also be made of metallic alloys, conductive oxides and amorphous semiconductors. The integrated capping, which provides a sealed cavity, is accomplished through bonding pads defined in the post-processing of the CMOS substrate.

2. 发明授权

EP3155667B1 MONOLITHIC CMOS-INTEGRATION OF FREE-AND NON-FREE-STANDING MEMS STRUCTURES IN A SEALED CAVITY 有权转让
公开(公告)号：EP3155667B1
公开(公告)日：2020-04-22
申请号：EP15809355.9
申请日：2015-06-10
申请人： Insense Inc.
发明人：
IPC分类号： H01L29/84 , B81C1/00

3. 发明公开

EP3155667A1 WAFER SCALE MONOLITHIC CMOS-INTEGRATION OF FREE-AND NON-FREE-STANDING METAL- AND METAL ALLOY-BASED MEMS STRUCTURES IN A SEALED CAVITY AND METHODS OF FORMING THE SAME 有权转让
标题翻译：在以对其形成密封的腔体和方法的独立式单片CMOS集成在晶片级和不自由站立金属及合金的MEMS结构
公开(公告)号：EP3155667A1
公开(公告)日：2017-04-19
申请号：EP15809355.9
申请日：2015-06-10
申请人： Insense Inc.
发明人：
IPC分类号： H01L29/84
摘要： An assembly of metallic MEMS structures directly fabricated on planarized CMOS substrates, containing the application-specific integrated circuit (ASIC), by direct deposition and subsequent microfabrication steps on the ASIC interconnect layers, with integrated capping for packaging, is provided. The MEMS structures comprise at least one MEMS device element, with or without moveable parts anchored on the CMOS ASIC wafer with electrical contact provided via the metallic interconnects of the ASIC. The MEMS structures can also be made of metallic alloys, conductive oxides and amorphous semiconductors. The integrated capping, which provides a sealed cavity, is accomplished through bonding pads defined in the post-processing of the CMOS substrate.
摘要翻译：平坦化的CMOS基板上直接制造金属MEMS结构，包含应用程序专用集成电路（ASIC），通过直接沉积和在ASIC互连层的微细加工的后续步骤的组件，具有集成的封盖用于包装，提供。的MEMS结构具有至少一个MEMS器件元件，具有或不具有锚定在CMOS ASIC晶片上经由ASIC的金属互连件提供电接触可移动的部件。因此，MEMS结构可以由金属合金，导电氧化物和无定形半导体。集成封盖，它提供了一个密封的腔中，通过在CMOS衬底的后处理定义接合垫来完成的。

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