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81. 发明授权

EP0792955B1 Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same 失效
标题翻译：蓝宝石单晶，其如在一个半导体激光二极管的基板和其制备方法使用
公开(公告)号：EP0792955B1
公开(公告)日：2002-08-14
申请号：EP97301352.7
申请日：1997-02-28
申请人： KYOCERA CORPORATION
发明人： Kinoshita, Hiroyuki, c/o Kyocera Corporation , Umehara, Motohiro, c/o Kyocera Corporation
IPC分类号： C30B29/20 , C30B15/34 , C30B33/00 , H01S5/10
CPC分类号： H01S5/32341 , C30B29/20 , C30B33/00 , G02B1/02 , H01S5/0202 , H01S5/0213 , H01S5/0422 , H01S5/3202
摘要： A sapphire single crystal body useful as a substrate, of thin film growth, for semiconductor or the like electronic parts or component parts, a single crystal sapphire substrate, and a method for working the same are disclosed. Considering that the cleavage plane of the plane R of the sapphire single crystal body has a smooth plane high in surface precision and is easier to cleave, for an easier dividing operation, by cleaving, of the substrate after the formation of the element such as semiconductor element, functional element, a reference plane substantially parallel or vertical to the plane R is provided on the periphery of the substrate, so as to make an index for controlling the plane R in the cleavage division. Forming a linear crack parallel or vertical to the reference plane of the substrate provides a starting point to develop the crack in the thickness direction. In a laser diode of the invention, the single crystal sapphire substrate which forms the semiconductor multilayer is cleaved, divided along the plane R to form the cleaved plane connected with the semiconductor multilayer and the substrate. Since the cleaved plane of the semiconductor muitilayer is an extremely smooth plane, the cleaved plane can be used for the reflection plane for laser resonator use of the semiconductor multilayer.

82. 发明公开

EP1013802A1 Method of joining synthetic corundum, method of manufacturing synthetic corundumcell, and corundum cell 有权
标题翻译：加入合成刚玉和制造合成刚玉细胞的方法的方法
公开(公告)号：EP1013802A1
公开(公告)日：2000-06-28
申请号：EP99308487.0
申请日：1999-10-27
申请人： Japan cell Co., Ltd. , Rion Co., Ltd.
发明人： Fukazawa, Hajime, Japan Cell Co., Ltd.
IPC分类号： C30B33/00 , C30B29/20
CPC分类号： C30B33/00 , C30B29/20 , Y10T428/1317
摘要： Ground joint surfaces of two synthetic corundum pieces 4, 5 are superposed on each other, and ends thereof are held in intimate contact with each other. The synthetic corundum pieces are then heated at a temperature equal to or lower than the melting point of synthetic corundum to joint the synthetic corundum pieces 4, 5.
摘要翻译：的两个合成刚玉片4，5接地接合面彼此重叠，并且它们的端部在与海誓山盟保持紧密接触。然后将合成的刚玉结构构成;在等于或高于合成刚玉的熔点低到关节的合成刚玉片的温度4,5 加热

83. 发明授权

EP0644277B1 PROCESS FOR PRODUCING ALPHA-ALUMINA 失效
标题翻译：用于生产α-氧化铝
公开(公告)号：EP0644277B1
公开(公告)日：1999-11-03
申请号：EP93910426.1
申请日：1993-06-01
申请人： Sumitomo Chemical Company, Limited
发明人： MOHRI, Masahide 277-4, Shimoyokoba , UCHIDA, Yoshio Katsuragi Ryou 204 , SAWABE, Yoshinari 550, Kitaohta , WATANABE, Hisashi Katsuragi Ryou 410
IPC分类号： C30B29/20 , C01F7/44 , C01F7/32
CPC分类号： C01F7/442 , C01F7/02 , C01P2004/03 , C01P2004/30 , C01P2004/40 , C01P2004/42 , C01P2004/52 , C01P2004/54 , C01P2004/60 , C01P2004/61 , C01P2004/62 , C01P2006/80 , C30B25/00 , C30B29/20
摘要： A powdery alpha -alumina comprising single-crystal alpha -alumina grains which are homogeneous and free from any crystal seed inside, form an at least eight-sided polyhedron, and have a D to H ratio of 0.5 to 3.0 (wherein D is the maximum grain diameter in parallel with the hexagonal lattice plane of the alpha -alumina having a hexagonal closest lattice structure and H is the grain diameter perpendicular to the hexagonal lattice plane thereof), a number-average grain diameter of 0.1 to 5 mu m and a narrow grain size distribution. The powdery alpha -alumina of the invention comprises single-crystal alpha -alumina grains which are nearly spherical, fine and structurally homogeneous and have a narrow grain size distribution, and is suitable as the raw materials of abrasive, sinter, plasma spraying material, filler, single crystal, catalyst support, phosphor, sealing material and ceramic filter, in particular, as the raw materials of precision abrasive, sinter and ceramic filter, thus being remarkably useful from the industrial viewpoint.

84. 发明授权

EP0645477B1 Conversion of polycrystalline material to single crystal material using bodies having a selected surface topography 失效
标题翻译：通过使用材料与特定的表面特性的多晶材料，以单晶材料转化
公开(公告)号：EP0645477B1
公开(公告)日：1998-12-09
申请号：EP94306450.1
申请日：1994-09-01
申请人： GENERAL ELECTRIC COMPANY
发明人： Levsinson, Lionel Monty , Scott, Curtis Edward
IPC分类号： C30B1/02 , C30B29/20
CPC分类号： C30B1/00 , C30B29/20
摘要： A solid step process for converting a polycrystalline body to a single crystal body includes the steps of forming a selected surface topography on the body and then heating the body at a temperature below its melting temperature for a time sufficient to substantially convert the polycrystalline material to single crystal material. The surface topography includes depressions or protrusions from the body having sidewalls of the polycrystalline material that are disposed to intersect one another at junctions forming relatively sharp comers, and the dimensions of the sidewalls are greater than the average grain size of the polycrystalline material. Typically alumina is the polycrystalline material and surface features include grooves or the like. The patterned alumina body with the selected surface topography is heated to a temperature between 1800 DEG and 2000 DEG C in one or more cycles to convert the polycrystalline alumina to sapphire.

85. 发明公开

EP0792955A3 Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same 失效
标题翻译：蓝宝石单晶，其如在一个半导体激光二极管的基板和其制备方法使用
公开(公告)号：EP0792955A3
公开(公告)日：1998-05-13
申请号：EP97301352
申请日：1997-02-28
申请人： KYOCERA CORP
发明人： KINOSHITA HIROYUKI , UMEHARA MOTOHIRO
IPC分类号： C30B33/00 , H01S5/02 , H01S5/32 , H01S5/323 , C30B29/20 , C30B15/34 , H01S3/085
CPC分类号： H01S5/32341 , C30B29/20 , C30B33/00 , G02B1/02 , H01S5/0202 , H01S5/0213 , H01S5/0422 , H01S5/3202
摘要： A sapphire single crystal body useful as a substrate, of thin film growth, for semiconductor or the like electronic parts or component parts, a single crystal sapphire substrate, and a method for working the same are disclosed. Considering that the cleavage plane of the plane R of the sapphire single crystal body has a smooth plane high in surface precision and is easier to cleave, for an easier dividing operation, by cleaving, of the substrate after the formation of the element such as semiconductor element, functional element, a reference plane substantially parallel or vertical to the plane R is provided on the periphery of the substrate, so as to make an index for controlling the plane R in the cleavage division. Forming a linear crack parallel or vertical to the reference plane of the substrate provides a starting point to develop the crack in the thickness direction. In a laser diode of the invention, the single crystal sapphire substrate which forms the semiconductor multilayer is cleaved, divided along the plane R to form the cleaved plane connected with the semiconductor multilayer and the substrate. Since the cleaved plane of the semiconductor muitilayer is an extremely smooth plane, the cleaved plane can be used for the reflection plane for laser resonator use of the semiconductor multilayer.
摘要翻译：蓝宝石单晶体作为一个有用的基片，薄膜生长的，对于半导体等电子部件或组成部分，单晶蓝宝石衬底，和用于工作的同一个方法游离缺失光盘。考虑没有所述蓝宝石单晶体的平面R的解理面具有光滑的平面高的表面精确度，并且更容易切割，在容易将手术，由元件形成后切割基板的，：诸如半导体元件，功能元件，一个基准平面基本上平行或垂直于平面R被设置在基片的周边上，从而使一个索引，用于控制在所述裂解的分裂平面R。形成线性裂缝平行或垂直于基板的基准平面提供了一个起点来开发在厚度方向上的裂纹。在本发明的一个激光二极管，其形成在半导体多层单晶蓝宝石衬底被切割，沿着将R分割，以形成与半导体层叠基板和平面相连的切割平面。由于半导体muitilayer的解理平面计划极其光滑，切割的平面可用于反射面的激光谐振器中使用的半导体多层的。

86. 发明公开

EP0644277A4 PROCESS FOR PRODUCING ALPHA-ALUMINA. 失效
标题翻译： VERFAHREN ZUR HERSTELLUNG VON ALPHA-ALUMINOXOXID。
公开(公告)号：EP0644277A4
公开(公告)日：1995-09-20
申请号：EP93910426
申请日：1993-06-01
申请人： SUMITOMO CHEMICAL CO
发明人： MOHRI MASAHIDE - SHIMOYOKOBA , UCHIDA YOSHIO KATSURAGI RYOU , SAWABE YOSHINARI KITAOHTA , WATANABE HISASHI KATSURAGI RYO
IPC分类号： C01F7/02 , C01F7/44 , C30B25/00 , C30B29/20
CPC分类号： C01F7/442 , C01F7/02 , C01P2004/03 , C01P2004/30 , C01P2004/40 , C01P2004/42 , C01P2004/52 , C01P2004/54 , C01P2004/60 , C01P2004/61 , C01P2004/62 , C01P2006/80 , C30B25/00 , C30B29/20
摘要： A powdery alpha -alumina comprising single-crystal alpha -alumina grains which are homogeneous and free from any crystal seed inside, form an at least eight-sided polyhedron, and have a D to H ratio of 0.5 to 3.0 (wherein D is the maximum grain diameter in parallel with the hexagonal lattice plane of the alpha -alumina having a hexagonal closest lattice structure and H is the grain diameter perpendicular to the hexagonal lattice plane thereof), a number-average grain diameter of 0.1 to 5 mu m and a narrow grain size distribution. The powdery alpha -alumina of the invention comprises single-crystal alpha -alumina grains which are nearly spherical, fine and structurally homogeneous and have a narrow grain size distribution, and is suitable as the raw materials of abrasive, sinter, plasma spraying material, filler, single crystal, catalyst support, phosphor, sealing material and ceramic filter, in particular, as the raw materials of precision abrasive, sinter and ceramic filter, thus being remarkably useful from the industrial viewpoint.
摘要翻译：一种生产包含单晶α-氧化铝晶粒的粉状α-氧化铝的方法，该方法包括在含有至少1体积％氯化氢的气氛气体中进行热处理时产生过渡氧化铝的烧结过渡氧化铝和/或氧化铝源材料或者在600℃以上，优选600℃以上1400℃以下，更优选800℃以上1200℃以下含有1体积％以上的氯和0.1体积％以上的蒸汽这两者。可用的氧化铝源材料的例子包括氢氧化铝，明矾和硫酸铝。该方法可以提供包含单晶α-氧化铝晶粒的粉末状α-氧化铝，所述α-氧化铝晶粒高纯度，细且均匀，具有窄的晶粒尺寸分布，不会聚集，并且由各种氧化铝源材料形成至少八面多面体它们在种类，纯度，形式，粒度和组成上互不相同。

87. 发明公开

EP0645476A2 Solid state thermal conversion of polycrystalline alumina to sapphire 失效
标题翻译： Thermische Feststoff-Umwandlung von polykristallinem Aluminiumoxid in einen Saphir。
公开(公告)号：EP0645476A2
公开(公告)日：1995-03-29
申请号：EP94306449.3
申请日：1994-09-01
申请人： GENERAL ELECTRIC COMPANY
发明人： Scott, Curtis Edward , Levinson, Lionel Monty , Maxwell, Randolph E. , Kaliszewski, Mary Sue
IPC分类号： C30B29/20 , C30B1/02
CPC分类号： C30B1/02 , C30B29/20
摘要： A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100°C but below 2050°C, the melting point of alumina.
摘要翻译：通过将多晶材料加热到材料的熔融温度的一半以上但低于材料的熔点的温度，已经实现了将致密多晶陶瓷体大量转化成单晶体的固态方法。由于该方法是固态工艺，因此不需要熔化陶瓷体以将其转化为单晶。该方法已被用于通过将PCA加热至高于1100℃但低于2050℃的温度将氧化铝含量低于100wppm的致密多晶氧化铝体（PCA）转化为蓝宝石（单晶氧化铝），氧化铝的熔点。

88. 发明授权

EP0496220B1 Verfahren und Vorrichtung zur Herstellung von Kristallen sowie Kristall 失效
标题翻译：生产晶体和晶体的方法和装置。
公开(公告)号：EP0496220B1
公开(公告)日：1994-08-17
申请号：EP92100323.2
申请日：1992-01-10
申请人： Urland, Werner Prof.Dr.rer.nat. , Tietz, Frank Dipl.-Chem.
发明人： Urland, Werner Prof.Dr.rer.nat. , Tietz, Frank Dipl.-Chem.
IPC分类号： C30B31/04 , C30B29/22 , C30B31/00 , C30B29/20
CPC分类号： C30B31/04 , C30B29/20 , C30B31/00

89. 发明公开

EP0496220A1 Verfahren und Vorrichtung zur Herstellung von Kristallen sowie Kristall 失效
标题翻译： Verfahren und Vorrichtung zur Herstellung von Kristallen sowie Kristall。
公开(公告)号：EP0496220A1
公开(公告)日：1992-07-29
申请号：EP92100323.2
申请日：1992-01-10
申请人： Urland, Werner Prof.Dr.rer.nat. , Tietz, Frank Dipl.-Chem.
发明人： Urland, Werner Prof.Dr.rer.nat. , Tietz, Frank Dipl.-Chem.
IPC分类号： C30B31/04 , C30B29/22 , C30B31/00 , C30B29/20
CPC分类号： C30B31/04 , C30B29/20 , C30B31/00
摘要： Es werden ein Verfahren und Vorrichtung zur Herstellung von Kristallen sowie Kristalle als Ergebnis dieses Verfahrens beschrieben.
Das Verfahren bezieht sich auf Kristalle, welche ein Wirtsgitter aus β-Aluminium-Oxid und in leitenden Ebenen zunächst Natrium Ionen enthalten. Durch einen Ionenaustausch werden die Natrium-Ionen durch dreiwertige Ionen Seltener Erden teilweise oder ganz ersetzt.
Ein wesentliches Merkmal des Verfahrens besteht darin, dehydratisierte Na-β-Al₂O₃-Kristalle in eine reine SE X₃-Schmelze (X = Cl, Br, I) einzutauchen und dort unter einer vorgegebenen Prozeßtemperatur und Prozeßzeit zu belassen.
摘要翻译：描述由该方法产生晶体和晶体的方法和装置。该方法涉及含有β-氧化铝的主体晶格并且在导电平面中的初始为钠离子的晶体。通过离子交换，钠离子部分或完全被稀土的三价离子所取代。该方法的一个重要特征是将脱水的Na-β-Al2O3晶体浸入纯稀土-III熔体（X = Cl，Br或I）中，并在给定的工艺温度和给定的工艺时间将它们留在那里。

90. 发明公开

EP0355340A1 Process for producing structures by bonding together synthetic corundum single crystals 失效
标题翻译：一种用于通过刚玉的合成单晶组件制造微结构的过程。
公开(公告)号：EP0355340A1
公开(公告)日：1990-02-28
申请号：EP89112169.1
申请日：1989-07-03
申请人： Aoshima, Hiroaki
发明人： Aoshima, Hiroaki
IPC分类号： G01N21/03 , C30B33/00 , C30B29/20
CPC分类号： G01N21/03 , C30B29/20 , C30B33/00 , G01N2021/0346
摘要： In a process for producing a structure of synthetic corundum single crystals integrated, which is disclosed herein, a synthetic corundum single-crystal ingot(s) is cut to form a first rectangular prism, and one face of the first rectangular prism is optically polished to form a second rectangular prism. Then, the second rectangular prism is cut, along a plane perpendicular to the optically polished face, into a first plate piece which is then surrpounded with a jig, and upper and lower surfaces thereof are optically polished to form a second plate piece. The second plate pieces are put one on another with their plane, edges, axes and axial angles of the upper and lower optically-polished faces being aligned with one another, respectively by use of an incorpoarating jig. The superposed plate pieces are brought into chemical contact with one another and heated at a temperature lower than a melting point of the synthetic corundum, whewreby they are closely joined or bonded.
摘要翻译：在用于生产集成电路合成刚玉单晶的结构的过程中，所有这一切都为盘游离缺失在，合成刚玉单晶锭（S）被切割以形成一个第一矩形棱形体，且所述第一矩形棱柱的一个面是光学抛光以形成第二矩形棱柱。然后，第二矩形棱柱被切断，沿着平面垂直于光学抛光面，到第一板件的所有然后将其与一夹具surrpounded，以及它们的上，下表面是光学抛光，以形成第二板片。第二板件在incorpoarating夹具放置在另一个上与他们的计划，边轴并且彼此对齐的上部和下部光学抛光面中的轴向的角度，通过使用分别。叠置板片在比熔点合成刚玉，whewreby它们紧密接合或粘结的温度下行为纳入化学彼此接触并加热。

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