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    • 79. 发明公开
    • Feedforward structure with programmable zeros for synthesizing continuous-time filters, delay lines and the like
    • 前馈Strüktur可编程零用于合成连续时间滤波器,延迟线等
    • EP0926814A1
    • 1999-06-30
    • EP97830696.7
    • 1997-12-23
    • STMicroelectronics S.r.l.
    • Portaluri, SalvatorePisati, Valerio
    • H03F1/00H03H11/04
    • H03H11/04
    • A feedforward structure with programmable zeros for synthesizing continuous-time filters, delay lines and the like, whose particularity is that it comprises a first cell and a second cell which are cascade-connected, each one of the first and second cells comprising a first pair (1, 2) of bipolar transistors in which the emitter terminals are connected to a current source (5), the first pair of transistors being connected to a second pair of transistors (6, 7), a current source (11) being connected to the emitter terminals of the second pair of transistors, a first high-impedance element (C) being connected between the first and second pairs of transistors, a second high-impedance element (C) being connected in output to the second pair of transistors, a fifth transistor (8) being connected between the collector terminal of a first transistor (1) of the first pair of transistors and a collector terminal of a second transistor (2) of the second pair of transistors, the base terminal of the fifth transistor (8) receiving a signal which is taken from the collector terminal of the first transistor of the first pair of transistors and is taken with a positive sign in the first cell and with a negative sign in the second cell, in order to determine a transfer function with a pair of singularities at the numerator, the second transistors (2, 7) of the first and second pairs being controlled respectively by current sources (4, 9) which have mutually different values.
    • 前馈结构,具有可编程零用于合成连续时间滤波器,延迟线等,谁的特殊性是做到了包括第一单元和哪些是级联连接的第二电池,其包括一第一对中的第一和第二小区中的每一个 (1,2),在该发射极端子连接到电流源(5),所述第一对晶体管中的另一个连接到第二对晶体管的双极晶体管(6,7),电流源(11)连接 到所述第二对晶体管的发射极端子,连接在第一和第二对晶体管之间的第一高阻抗元件(C),第二高阻抗元件(C)被连接在输出到所述第二对晶体管的 ,第五晶体管(8)连接的第一晶体管的集电极端子(1)之间的第一对晶体管和第二对晶体管的第二晶体管(2)的集电极端子,的基极端的 第五晶体管(8)接收信号的所有其从所述第一对晶体管的第一晶体管的集电极端子中取出,并在第一小区和与所述第二小区的负号被取正号,以 确定性矿由电流源分别被控制在与分子的一对奇点的,第一和第二对的第二晶体管(2,7)的传递函数(4,9),它们具有相互不同的值。
    • 80. 发明公开
    • High voltage output stage for driving an electric load
    • 最后一个Versㄧher her her her her chen chen chen chen chen chen chen chen
    • EP0913925A1
    • 1999-05-06
    • EP97830559.7
    • 1997-10-31
    • STMicroelectronics S.r.l.
    • Depetro, RiccardoMartignoni, FabrizioScian, Enrico
    • H03F1/00H03K19/0185
    • H03K19/018585
    • The invention relates to a high-voltage final output stage (1) for driving an electric load, of the type which comprises a complementary pair (3) of transistors connected between first (Vdd) and second (Vss) supply voltage references, and at least one PMOS pull-up transistor (MP1) connected in series with an NMOS pull-down transistor (MN). The stage (1) comprises an additional PMOS transistor (MP2) connected in parallel with the pull-up transistor (MP1) and having the body terminal in common therewith. More particularly, the body terminals of both PMOS transistors (MP1,MP2) are formed in the semiconductor within a common well which can withstand high voltages, and the additional transistor (MP2) is a thick oxide PMOS power transistor.
    • 本发明涉及用于驱动电负载的高压最终输出级(1),其包括连接在第一(Vdd)和第二(Vss)电源电压基准之间的晶体管的互补对(3),并且在 与NMOS下拉晶体管(MN)串联连接的至少一个PMOS上拉晶体管(MP1)。 级(1)包括与上拉晶体管(MP1)并联连接并且与其主体端子共同连接的附加PMOS晶体管(MP2)。 更具体地说,两个PMOS晶体管(MP1,MP2)的主体端子形成在可承受高电压的公共阱内的半导体中,附加晶体管(MP2)是厚氧化物PMOS功率晶体管。