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71. 发明公开

EP2533304A2 Photoelectric conversion device 无效
标题翻译： Photoelektrische Umwandlungsvorrichtung
公开(公告)号：EP2533304A2
公开(公告)日：2012-12-12
申请号：EP12003571.2
申请日：2012-05-08
申请人： Sharp Kabushiki Kaisha
发明人： Sato, Takanobu , Kitazawa, Tazuko
IPC分类号： H01L31/052 , H01L31/075 , H01L31/076
CPC分类号： H01L31/075 , H01L31/0543 , H01L31/076 , Y02E10/52 , Y02E10/548 , Y02E10/549
摘要： A photoelectric conversion device comprises a photoelectric conversion layer; a plurality of structures made of a dielectric substance; and a medium layer for transmitting light interposed between the photoelectric conversion layer and the structures or between the structures, or both, wherein the plurality of structures and the medium layer satisfy n die > n med and Dave X n med / λ max max is a maximal sensitivity wavelength at which the sensitivity of the photoelectric conversion layer to light energy is maximal, n med is a refractive index of the medium layer at the wavelength λ max , n die is a refractive index of the structures at the wavelength λ max , and D ave is an average of shortest distances between an light exposure surface of the photoelectric conversion layer and the structures.
摘要翻译：光电转换装置包括光电转换层; 由电介质构成的多个结构体; 以及用于透射插入在光电转换层与结构之间或结构之间或两者之间的光的介质层，其中多个结构和介质层满足n die> n med和Dave X n med /»max <0.3，其中λmax是光电转换层对光能的灵敏度最大的最大灵敏度波长，n med是波长λmax时的介质层的折射率，n die是结构的折射率波长λmax，D ave是光电转换层的曝光表面与结构之间的最短距离的平均值。

72. 发明公开

EP2005484A4 THIN-FILM SOLAR CELL AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：薄膜太阳能电池及其制备方法
公开(公告)号：EP2005484A4
公开(公告)日：2012-10-17
申请号：EP07745913
申请日：2007-04-11
申请人： LG ELECTRONICS INC
发明人： AHN SEH-WON , EO YOUNG-JOO , LEE KWY-RO , LEE DON-HEE , LEE HEON-MIN
IPC分类号： H01L31/042 , H01L27/142 , H01L31/076
CPC分类号： H01L31/076 , H01L31/046 , H01L31/0465 , Y02E10/548

73. 发明公开

EP2025006A4 PHOTOVOLTAIC DEVICE THROUGH LATERAL CRYSTALLIZATION PROCESS AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：通过横向结晶过程中产生的光伏器件及其制造方法
公开(公告)号：EP2025006A4
公开(公告)日：2012-08-15
申请号：EP08704916
申请日：2008-01-22
申请人： LG ELECTRONICS INC
发明人： EO YOUNG-JOO , AHN SEH-WON , LEE KWY-RO , LEE DON-HEE , LEE HEON-MIN
IPC分类号： H01L31/04 , H01L31/075 , H01L31/076 , H01L31/18
CPC分类号： H01L31/1824 , H01L31/076 , Y02B10/12 , Y02E10/545 , Y02E10/548 , Y02P70/521

74. 发明公开

EP1503427A4 METHOD FOR FABRICATING TANDEM THIN FILM PHOTOELECTRIC CONVERTER 审中-公开
标题翻译：用于生产光电管TANDEM薄膜转换器
公开(公告)号：EP1503427A4
公开(公告)日：2011-09-28
申请号：EP03715746
申请日：2003-04-02
申请人： KANEKA CORP
发明人： YOSHIMI MASASHI , SUEZAKI TAKASHI , YAMAMOTO KENJI
IPC分类号： H01L31/075 , H01L21/00 , H01L31/076 , H01L31/20
CPC分类号： H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521

75. 发明公开

EP1041646A4 METHOD OF PRODUCING SILICON THIN-FILM PHOTOELECTRIC TRANSDUCER AND PLASMA CVD APPARATUS USED FOR THE METHOD 有权
标题翻译：方法和薄膜硅光电管转换这一过程，应用等离子体CVD设备
公开(公告)号：EP1041646A4
公开(公告)日：2006-03-22
申请号：EP98950423
申请日：1998-10-28
申请人： KANEKA CORP
发明人： OKAMOTO YOSHIFUMI , YOSHIMI MASASHI , YAMAMOTO KENJI
IPC分类号： H01L31/0368 , H01L31/076 , H01L31/077 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , H01L31/03685 , H01L31/077 , H01L31/182 , H01L31/206 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10S438/935
摘要： A method of producing a silicon thin-film photoelectric transducer, characterized in that crystalline photoelectric transducing layer included in the photoelectric transducer is deposited by a plasma CVD method under the following conditions: the temperature of the underlying layer is not higher than 550 DEG C; a silane gas and a hydrogen gas are major components of the gas introduced into a plasma reaction chamber; the flow rate of the hydrogen gas is more than 50 times as great as that of the silane gas; the pressure in the plasma reaction chamber is higher than 3 Torr; and the film-forming rate is higher than 17 nm/min in the direction of the thickness.

76. 发明公开

EP0347471A4 SOLAR CELL ARRAY FOR DRIVING MOSFET GATES 失效
标题翻译：用于驱动MOSFET栅极的太阳能电池阵列
公开(公告)号：EP0347471A4
公开(公告)日：1992-01-08
申请号：EP89900913
申请日：1988-12-26
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
发明人： MURAKAMI, SATORU , YOSHIDA, EIICHI , ZENKI, TOMOYOSHI , YAMAGUCHI, MINORI , NAKAYAMA, TAKEHISA , TAWADA, YOSHIHISA
IPC分类号： H01L27/142 , H01L31/076 , H03K17/78 , H03K17/785 , H01L21/66
CPC分类号： H01L31/076 , H01L31/046 , H01L31/0465 , H03K17/78 , H03K17/785 , Y02E10/548
摘要： A solar cell array for producing electromotive force in response to incident light to drive MOSFET gates for use as a semiconductor relay. The manufacture of a crystalline silicon semiconductor used as a solar cell for the semiconductor relay requires too many mask patterns and complicated processes. This involves difficulties in device integration and thin-film formation, resulting in an increase in the cost. The invention provides a solar cell wherein a great number of semiconductor cells of amorphous silicon are connected in series to drive MOSFET gates.

77. 发明授权

EP4174914B1 TANDEM SOLAR CELL 有权
公开(公告)号：EP4174914B1
公开(公告)日：2024-04-17
申请号：EP21870485.6
申请日：2021-10-12
IPC分类号： H01L31/0687 , H10K30/00 , H01L31/0725 , H01L31/18 , H01L31/049 , H01L31/043 , H01L31/0224 , H01L31/0216 , H01L31/078 , H01L31/076 , H10K85/50
CPC分类号： Y02E10/544 , Y02E10/548 , Y02E10/549 , H01L31/043 , H01L31/02168 , H01L31/022466 , H01L31/049 , H01L31/1804 , H01L31/0725 , H01L31/0687 , H10K39/15 , H10K85/50

78. 发明公开

EP4298675A1 PERC -TANDEM SOLAR CELL WITH SACRIFICIAL LAYER 审中-实审
公开(公告)号：EP4298675A1
公开(公告)日：2024-01-03
申请号：EP22706871.5
申请日：2022-02-25
申请人： Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO
发明人： ANKER, John , GEERLIGS, Lambert Johan
IPC分类号： H01L31/078 , H01L27/30 , H01L31/18 , H01L51/42 , H01L51/44 , H01L31/0687 , H01L31/0725 , H01L31/076

79. 发明授权

EP2827382B1 SOLAR CELL AND METHOD FOR MANUFACTURING SAME 有权
公开(公告)号：EP2827382B1
公开(公告)日：2019-04-17
申请号：EP13797166.9
申请日：2013-04-24
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： NOBORI, Kazuhiro
IPC分类号： H01L31/052 , H01L31/04 , H01L31/042 , H01L31/076 , H01L31/0687 , H01L31/024 , H01L31/048 , H01L31/05 , H02S40/22 , H01L31/054

80. 发明授权

EP2386124B1 SOLAR CELL 审中-公开
公开(公告)号：EP2386124B1
公开(公告)日：2018-12-26
申请号：EP10813861.1
申请日：2010-01-11
申请人： LG Electronics Inc.
发明人： LEE, Hongcheol , MOON, Seyoun , AHN, Sehwon , YOU, Dongjoo
IPC分类号： H01L31/028 , H01L31/075 , H01L31/076 , H01L31/036
CPC分类号： H01L31/075 , H01L31/028 , H01L31/03685 , H01L31/076 , Y02E10/545 , Y02E10/547 , Y02E10/548
摘要： A solar cell is discussed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and at least one photoelectric transformation unit positioned between the first electrode and the second electrode. The at least one photoelectric transformation unit includes a p-type semiconductor layer, an intrinsic (i-type) semiconductor layer, an n-type semiconductor layer, and a buffer layer positioned between the p-type semiconductor layer and the i-type semiconductor layer. A hydrogen content of the buffer layer is more than a hydrogen content of the i-type semiconductor layer.

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