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    • 73. 发明公开
    • Modulateur électrooptique intégré et procédé de fabrication de ce modulateur
    • Integrierte elektro-optischen调制器和seine Herstellungsverfahren。
    • EP0539298A1
    • 1993-04-28
    • EP92402889.7
    • 1992-10-22
    • COMMISSARIAT A L'ENERGIE ATOMIQUE
    • Valette, Serge
    • G02F1/01G02B6/12
    • G02F1/065G02B6/122G02B6/1228G02B2006/12069G02B2006/12173G02B2006/12176
    • Ce modulateur comprend un substrat 2, une structure guide comportant une couche guidante (14) définissant un microguide (16) pour la propagation de faisceaux, interposée entre des couches inférieure et supérieure (12, 18) d'indices inférieures à celui de la couche guidante ; une cavité (20) pratiquée dans la couche supérieure ; un matériau actif tel qu'un polymère organique solide actif (26) dont on peut modifier électriquement l'indice remplissant la cavité et servant de guide optique ; une couche de confinement (28) recouvrant le polymère ainsi que la structure guide, les indices de la couche supérieure et de la couche de confinement étant inférieurs à celui du polymère ; deux électrodes placées de part et d'autre du polymère, une électrode (6) située entre la couche inférieur et le substrat et une autre électrode (30) disposée sur la couche de confinement.
    • 该调制器包括衬底2,引导结构,其包括限定用于传播光束的微导体(16)的引导层(14),该引导层插入在低于或等于的指数的指数的下层和上层之间(12,18) 的引导层; 在上层制成的空腔(20); 诸如活性固体有机聚合物(26)的活性材料,其指数可以被电改性,填充空腔并用作光导; 覆盖聚合物的限制层(28)以及引导结构,上层和约束层的指数小于聚合物的指数; 放置在聚合物两侧的两个电极,位于下层和基底之间的电极(6)和布置在限制层上的另一个电极(30)。
    • 74. 发明公开
    • Optoelectronic semiconductor device comprising a waveguide and method of manufacturing such a device
    • 与辐射导体以及制造这种装置的方法的光电子半导体器件。
    • EP0536829A1
    • 1993-04-14
    • EP92202973.1
    • 1992-09-29
    • Philips Electronics N.V.
    • Venhuizen, Antonius Henricus Johannes
    • G02B6/12G02F1/01
    • G02B6/13G02B6/1221G02B6/42G02B6/4233G02F1/065
    • Optoelectronic semiconductor devices which have a groove-shaped waveguide in an oxide layer provided on a silicon substrate are compact, easy to manufacture, and - when the waveguide comprises a non-linear optical material - applicable inter alia for frequency doubling of laser radiation.
      In the known device, scattering losses occur in the waveguide owing to the roughness of the groove which arises during etching of the groove.
      In a device according to the invention, the groove and a portion of the oxide layer are formed by local, preferably thermal oxidation of the silicon substrate. The groove formed at the area of the oxidation mask has a smoother surface and as a result the waveguide has lower losses. When the device comprises a GaAs/AlGaAs diode laser, it forms an efficient, compact, inexpensive and blue-emitting laser source which is suitable for use in an optical disc system. Preferably, the diode laser is situated in a deeper and wider further groove in the oxide layer. In a method according to the invention, a layer of silicon oxide and a groove therein are formed simultaneously through the use of local oxidation. Grooves of different widths and depths are obtained in that masks of various widths are used during this.
    • 设置在硅衬底其中在具有槽状的波导光电子半导体器件在氧化物层结构紧凑,易于制造,以及 - 当所述波导包括一非线性光学材料 - 用于激光辐射的倍频适用特别。 在已知的装置中,散射损耗发生由于槽的蚀刻过程中它产生凹槽的粗糙度波导英寸 在一个设备gemäß本发明,所述槽和所述氧化物层的一部分由硅衬底的地方,优选热氧化形成。 在氧化掩模的区域所形成的凹槽具有一个更光滑的表面,结果在波导具有更低的损耗。 当该装置包括由GaAs /的AlGaAs二极管激光器,它形成高效,紧凑的,廉价的和蓝色发射激光源的所有其适合用于在光盘系统中的使用。优选的是,二极管激光器位于更深的和抗蚀剂进一步槽的 在氧化物层中。 在方法gemäß本发明,氧化硅和一个槽构成的层在其中的同时,通过使用局部氧化形成。 不同的宽度和深度的凹槽获得并在此过程中使用的各种宽度的面具。
    • 75. 发明公开
    • Improved conversion efficiency second harmonic generator
    • Verbesserte Konversionswirksamkeit,zweiter Frequenzvervielfacher。
    • EP0533136A1
    • 1993-03-24
    • EP92115845.7
    • 1992-09-16
    • EASTMAN KODAK COMPANY
    • Penner, Thomas Lorne, c/o Eastman Kodak CompanyRobello, Douglas Robert, c/o Eastman Kodak CompanyArmstrong, Nancy Jo, c/o Eastman Kodak CompanyWilliams, David James, c/o Eastman Kodak Company
    • G02F1/37
    • B82Y20/00G02F1/065G02F1/3618G02F1/377G02F2202/027
    • An optical article is disclosed comprised of a support including a portion adjacent one major surface which is transparent to the electromagnetic radiation sought to be propagated, an organic layer unit capable of converting a portion of polarized electromagnetic radiation of a selected wavelength to its second harmonic wavelength, means for optically coupling into said organic layer unit polarized electromagnetic radiation of a selected wavelength in its zero order transverse magnetic mode, and means for receiving from the layer unit a portion of the electromagnetic radiation in the form of a first order transverse magnetic mode. The organic layer unit has a thickness which is at least 70 percent of the wavelength of the zero order transverse magnetic mode and differs by less than 100Å from the thickness required for identical propagation constants of the zero and first order transverse magnetic modes. The organic layer unit is comprised of a Y-type Langmuir-Blodgett assembly of amphiphiles forming a first Langmuir-Blodgett layer unit containing noncentrosymmetric organic molecular dipoles of a first orientation providing a second order polarization susceptibility to the first layer unit in excess of 10⁻⁹ electrostatic units, and a Y-type Langmuir-Blodgett assembly of amphiphiles forming a second Langmuir-Blodgett layer unit adapted to be coated on the first Langmuir-Blodgett layer unit containing noncentro-symmetric organic molecular dipoles of a second orientation providing a second order polarization susceptibility to the second layer unit in excess of 10⁻⁹ electrostatic units, but of opposite sign to that of the first layer unit.
    • 公开了一种光学制品,其包括支撑件,其包括邻近被试传播的电磁辐射透明的一个主表面的部分,能够将所选波长的偏振电磁辐射的一部分转换成其二次谐波波长的有机层单元 用于以其零级横向磁模式光学耦合到选定波长的有机层单元偏振电磁辐射的装置,以及用于从层单元接收一阶横向磁模式形式的电磁辐射的一部分的装置。 有机层单元的厚度为零级横向磁模的波长的至少70%,并且与零和一级横向磁模相同的传播常数所需的厚度相差小于100埃。 有机层单元由形成第一Langmuir-Blodgett层单元的Y型Langmuir-Blodgett组件组成,其包含第一取向的非中心对称有机分子偶极子,其提供超过10℃的第一层单元的二阶极化敏感性, - > <9>静电单元和形成第二Langmuir-Blodgett层单元的Y型Langmuir-Blodgett组装体,其适于涂覆在第一Langmuir-Blodgett层单元上,该单元含有第二取向的非对称有机分子偶极子 对第二层单元提供超过10 -9静电单位的二阶极化敏感性,但是与第一层单元相反。
    • 77. 发明公开
    • Planar optical element
    • Planares优化元素。
    • EP0522637A2
    • 1993-01-13
    • EP92201994.8
    • 1992-07-02
    • Philips Electronics N.V.
    • Venhuizen, Antonius Henricus JohannesRikken, Gerardus Ladislaus Johannes Andreas
    • G02F1/01G02F1/37G02B6/12
    • G02B6/122G02F1/065G02F1/377G02F2201/06
    • The invention relates to a planar optical element comprising a light-conducting layer 10 on a supporting material 11 having a refractive index which is lower than that of the light-conducting layer, which light-conducting layer comprises one or more waveguide channels 13. The waveguide channels are laterally delimited by metal layers 14,15 which extend on either side of each waveguide channel, which metal layers are located between the supporting material and the light-conducting layer and directly contact said light-conducting layer. Preferably, the metal layers are provided in the form of electrodes, such that an electric field can be applied transversely across one or more waveguide channels. Such a planar optical element can be used, for example, as an optical switch and in a device for doubling the frequency of a lightwave.
    • 本发明涉及一种平面光学元件,该平面光学元件包括在导光层的折射率低于支撑材料11的光导层10,该光导层包括一个或多个波导通道13。 波导通道由金属层14,15横向限定,金属层14,15在每个波导通道的任一侧延伸,金属层位于支撑材料和导光层之间并直接接触所述光导层。 优选地,金属层以电极的形式提供,使得电场可横向跨越一个或多个波导通道施加。 这样的平面光学元件可以用作例如光开关和将光波频率加倍的装置。
    • 80. 发明公开
    • Chromophore-containing compounds for opto-electronic applications
    • 用于光电子应用的含色素化合物
    • EP0474402A3
    • 1992-05-27
    • EP91307718.6
    • 1991-08-21
    • IMPERIAL CHEMICAL INDUSTRIES PLC
    • Ryan, Timothy GeorgeDevonald, David PhillipGordon, Hutchings MichaelIan, FergusonCarter, Neil
    • G02F1/35C09B23/14C09B17/00
    • G02F1/065G02F1/3615Y10T428/261Y10T428/31935
    • The use of a multi-functional, chromophore containing, polymerisable compound for producing an optical element having non-linear optical properties (an NLO element) wherein the multi-functional chromophore is a compound capable of being polymerised into a cross-linked network and of being poled under the influence of an electric field whilst being polymerised into the cross-linked network, the compound having the generalised formula (D) (C) (A) (F) D, C, A and F representing covalently linked moieties where C represents at least one conjugated system of π-bonds,
      A and D represent at least one respectively π-electron acceptor and π -electron donor groups linked at opposite ends of the conjugated system, and are preferably conjugated with the conjugated system of π-bonds (C) and where more than one moiety A, C or D is present they may be the same or different,
      F represents at least two polymerisable functional groups, which may be the same or different, attached to the π-conjugated system C or the groups A and D via substituent groups R₁ and R₂, where R₁ and R₂ are selected from alkyl, cycloalkyl, aryl heteroalkyl, alkenyl, cycloalkenyl, and alkynyl including groups which have been substituted or contain heteroatom replacement, the groups F being linked to the compound so that after the compound has been polymerised to give a cross-linked network the interpolymerised functional groups prevent significant realignment of the chromophore groups when the optical element is subject to temperature changes during any further fabrication and in use.