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    • 61. 发明公开
    • Injection-locked oscillator
    • 吸收式异步振荡器。
    • EP0665652A1
    • 1995-08-02
    • EP95400171.5
    • 1995-01-26
    • NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    • Tokumitsu, Tsuneo
    • H03L7/24H03B5/18H01Q3/36
    • H03L7/24H01Q3/36H03B5/18
    • An injection-locked oscillator having a non-reciprocal four-port network with a pair of input ports (1, 2) and a pair of output ports (3, 4) in which the signal transfer path from a first input port (1) to a first output port (3) is non-reciprocal, the signal transfer path from a second input port (2) to a second output port (4) is non-reciprocal, the signal transfer path from a second input port (2) to a first output port (3) is non-reciprocal, and an amplifier with the input port coupled with said first output port and the output port coupled with said second input port, is locked to an injection signal applied to said first input port and provides oscillation output to said second output port (4). The circuit between the first input port (1) and the second input port (2), and the circuit between the first output port (3) and the second output port (4) are electrically isolated. The present oscillator is implemented in a small IC chip, and has feature to be injection-locked in wide frequency band.
    • 一种具有具有一对输入端口(1,2)和一对输出端口(3,4)的不可逆四端口网络的注入锁定振荡器,其中来自第一输入端口(1)的信号传送路径 到第一输出端口(3)是​​不可逆的,从第二输入端口(2)到第二输出端口(4)的信号传送路径是不可逆的,来自第二输入端口(2)的信号传送路径 第一输出端口(3)是​​不可逆的,并且具有与所述第一输出端口耦合的输入端口和与所述第二输入端口耦合的输出端口的放大器被锁定到施加到所述第一输入端口的注入信号, 向所述第二输出端口(4)提供振荡输出。 第一输入端口(1)和第二输入端口(2)之间的电路以及第一输出端口(3)和第二输出端口(4)之间的电路是电隔离的。 本振荡器在小型IC芯片中实现,具有在宽频带内注入锁定的特点。
    • 63. 发明公开
    • Spannungsgesteuerter Mikrowellen-Oszillator
    • Spannungsgesteuerter Mikrowellen-Oszillator。
    • EP0600118A1
    • 1994-06-08
    • EP92120501.9
    • 1992-12-01
    • SIEMENS AKTIENGESELLSCHAFT
    • Lohninger, Gerhard, Dipl.-Ing.
    • H03B5/18
    • H03B5/1852H03B5/18H03B2200/0024
    • Ein spannungsgesteuerter Mikrowellen-Oszillator mit einem Feldeffekttransistor (1) als Verstärker und einer Varaktordiode (2) als frequenzbestimmendes Element soll mit hoher Ausgangsleistung und ausreichend großem Frequenzhub im Mikrowellen-Frequenzbereich so realisiert werden, daß S-Parameterstreuungen der aktiven Bauelemente möglichst geringen Einfluß auf die Kenndaten des Oszillators haben. Der Varaktordiode (2) ist ein abstimmbares Mikro-Streifenleitungsfilter (3) vorgeschaltet, und zum Bilden einer parallelen Rückkopplung mit dem Mikro-Streifenleitungsfilter (3) ist die Source-Elektrode des Feldeffekttransistors (1) direkt mit Masse verbunden.
    • 具有作为放大器的场效应晶体管(1)和作为频率确定元件的变容二极管(2)的电压控制微波振荡器将被建立为具有高输出功率和在微波频率范围内具有足够宽的频率偏差 有源分量的S参数的变化对振荡器的特性数据具有尽可能小的影响的方式。 变容二极管(2)之前是可调谐微带滤波器(3),场效应晶体管(1)的源极直接连接到地面,以与微带滤波器(3)形成平行反馈。
    • 64. 发明公开
    • Push-push oscillator
    • 推 - 推 - Oszillator。
    • EP0527470A1
    • 1993-02-17
    • EP92113672.7
    • 1992-08-11
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • Yabuki, HiroyukiIshigaki, IsaoMakimoto, Mitsuo
    • H03B5/18
    • H03B5/1847H03B19/00H03B2200/007H03B2200/0098H03B2202/07H03B2202/088
    • A push-push oscillator comprising: a resonator (6) having a transmission line and a capacitance connected to said transmission line in parallel; oscillating circuit (4) responsive to said resonator for oscillating and for producing first and second outputs having an antiphase relation therebetween; an in-phase combining circuit (1) for summing said first and second outputs of said oscillating circuit to produce a summed signal; and an antiphase combining circuit (7) responsive to two components from said resonator having an antiphase relation for producing a differential signal in accordance with difference between said two components. Alternatively, the in-phase combining circuit is connected to the resonator and the antiphase combining circuit is connected to the oscillating circuit. The antiphase combining circuit outputs a fundamental wave component of the resonator. The in-phase combining circuit outputs a second harmonic wave component. When this push-push oscillator is used in a PLL circuit to form a frequency synthesizer, a high frequency output is obtained with a low power consumption.
    • 一种按压式振荡器,包括:谐振器(6),其具有传输线和并联连接到所述传输线的电容; 振荡电路(4)响应于所述谐振器振荡并产生具有反相关系的第一和第二输出; 同步组合电路(1),用于对所述振荡电路的所述第一和第二输出求和以产生求和信号; 以及响应来自所述谐振器的两个分量的反相组合电路(7)具有反相关系,用于根据所述两个分量之间的差异产生差分信号。 或者,同相组合电路连接到谐振器,反相组合电路连接到振荡电路。 反相组合电路输出谐振器的基波分量。 同相组合电路输出二次谐波分量。 当该推压振荡器用于PLL电路以形成频率合成器时,以低功耗获得高频输出。
    • 65. 发明公开
    • An oscillating circuit with a ring shaped resonator of superconducting material coupled thereto
    • Oszillatorschaltung mit einem dazu gekoppelten ringformigen aus supraleitendem材料bestehenden Resonator。
    • EP0523564A1
    • 1993-01-20
    • EP92111792.5
    • 1992-07-10
    • SUMITOMO ELECTRIC INDUSTRIES, LTD.
    • Shiga, Nobuo, c/o Yokohama Works of Sumitomo
    • H03B5/18
    • H03B15/003H03B5/1852H03B15/00H03B2200/0016H03B2202/08
    • An improved oscillating circuit for use in microwave frequency bands has reduced power loss and is made smaller in vertical size. The local oscillating circuit includes an MMIC oscillator which comprises a FET (9), and a resonator (10) connected thereto so as to stabilize the oscillating frequency of the oscillator. The resonator is ring-shaped and arranged as close as several µm to several tens of µm to a predetermined position of a micro strip line forming a feedback loop connected to the FET forming the oscillator. Moreover, the resonator is a thin film formed by depositing a high-temperature superconducting material. As exemplary embodiments, YBCO, niobium and the like, can be used as high-temperature superconducting materials. Furthermore, a portion of the micro strip line, closest to the resonator, is concentrically disposed therewith to form a circular arc portion whose central angle is set at 90 degrees.
    • 用于微波频带的改进的振荡电路降低了功率损耗,并使其垂直尺寸变小。 本地振荡电路包括一个MMIC振荡器,它包括FET(9)和与其连接的谐振器(10),以稳定振荡器的振荡频率。 谐振器是环形的,并且被布置成几微米到几十微米的微带线的预定位置,形成连接到形成振荡器的FET的反馈环路。 此外,谐振器是通过沉积高温超导材料形成的薄膜。 作为示例性实施例,可以使用YBCO,铌等作为高温超导材料。 此外,最靠近谐振器的微带线的一部分与其同心地设置,以形成其中心角设置为90度的圆弧部分。
    • 69. 发明公开
    • Oscillating circuit device and its manufacturing method.
    • Einrichtung mit Oszillatorschaltung。
    • EP0510710A1
    • 1992-10-28
    • EP92107126.2
    • 1992-04-26
    • SUMITOMO ELECTRIC INDUSTRIES, LIMITED
    • Shiga, Nobuo, c/o Yokohama Works of Sumitomo
    • H03B5/18H01L27/06
    • H01L27/0605H03B5/1852H03B2200/0028H03B2200/0032H03B2200/0062H03B2201/0208H03B2202/025H03B2202/076
    • The oscillating apparatus according to this invention comprises a pulse doped FET (1), and a series feedback capacitor (2) connected to the source of the pulse doped FET (1), the pulse doped FET is a FET formed on a pulse doped epitaxial layer including a channel layer (23) with a high carrier density, and a cap layer (24) with a low carrier density formed on the channel layer (23). The series feedback capacitor (2) is a variable capacitor whose capacitance value increases when a gate bias voltage of the pulse doped FET (1) is changed toward increase a drain current of the pulse doped FET (1). Consequently, it is possible to reduce phase noises by controlling only the gate bias with an oscillation frequency set at a required value. As a result, the merits of the MMIC can be sufficiently utilized without the necessity of externally adding a dielectric resonator.
    • 根据本发明的振荡装置包括脉冲掺杂FET(1)和连接到脉冲掺杂FET(1)的源极的串联反馈电容器(2),所述脉冲掺杂FET是形成在脉冲掺杂的外延 层包括具有高载流子密度的沟道层(23)和形成在沟道层(23)上的具有低载流子密度的覆盖层(24)。 串联反馈电容器(2)是当脉冲掺杂FET(1)的栅极偏置电压改变以增加脉冲掺杂FET(1)的漏极电流时,其电容值增加的可变电容器。 因此,通过将振荡频率设定为所需值仅控制栅极偏置,可以减少相位噪声。 结果,可以充分利用MMIC的优点,而不需要外部添加介质谐振器。