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    • 70. 发明公开
    • A voltage-controlled oscillator
    • 一个压控振荡器
    • EP0475262A1
    • 1992-03-18
    • EP91114919.3
    • 1991-09-04
    • FUJITSU LIMITED
    • Sugawara, Hideo
    • H03B5/18
    • H03B5/1876H03B5/1852H03B2200/0024H03B2200/004H03B2200/0062H03B2201/0208H03B2202/027H03B2202/076
    • A voltage-controlled oscillator according to the present invention comprises: a transistor (5), where the drain electrode (D) is grounded, the gate electrode (G) is connected to a resonator (3) whose resonant frequency is adjustable according to a voltage applied to a voltage-dependent capacitance diode (D₁) electromagnetically coupled with the resonator (3), an output signal is output from the source electrode (S); a resistor connected (R₂) in gate bias circuit or source voltage supply circuit for detecting a low-frequency noise component generated in the transistor (5), where the detected low-frequency noise component is amplified and fed back to the voltage-dependent capacitance (D₁) so as to cancel a phase-noise component generated in the voltage-controlled oscillator. The above-descried voltage-controlled oscillator may be further provided with a reference crystal oscillator to which the voltage-controlled oscillator is phase-locked. Thus, a microwave voltage-controlled oscillator excellent in phase-noise characteristics of the oscillated frequency is accomplished though there is employed a GaAs FET which is not good in a low-frequency noise characteristic.
    • 根据本发明的压控振荡器包括:晶体管(5),其中漏电极(D)接地,栅电极(G)连接到谐振器(3),谐振器(3)的谐振频率可根据 施加到与谐振器(3)电磁耦合的依赖于电压的电容二极管(D 1)的电压,输出信号从源电极(S)输出; 一个连接在栅极偏置电路或源极电压源电路中用于检测晶体管(5)中产生的低频噪声分量的电阻器(R 2),其中检测到的低频噪声分量被放大并反馈到电压相关电容 (D 1),以消除压控振荡器中产生的相位噪声分量。 上面描述的压控振荡器可以进一步设置有压控振荡器被锁相的参考晶体振荡器。 因此,虽然采用了低频噪声特性不好的GaAs FET,但实现了振荡频率的相位噪声特性优良的微波压控振荡器。