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51. 发明公开

EP3033440A4 SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES 有权
标题翻译： SPUTTERTARGET MITRÜCKSEITENKÜHLUNGSRIPPEN
公开(公告)号：EP3033440A4
公开(公告)日：2017-04-05
申请号：EP14835827
申请日：2014-08-14
申请人： APPLIED MATERIALS INC
发明人： WEST BRIAN T , COX MICHAEL S , OH JEONGHOON
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3405 , C23C14/3407 , C23C14/35 , H01J37/3423 , H01J37/3426 , H01J37/3429 , H01J37/3435 , H01J37/347 , H01J37/3491 , H01J37/3497
摘要： Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.
摘要翻译：本公开的实施例涉及用于处理衬底的溅射室的溅射靶。在一个实施方案中，提供了用于溅射室的溅射靶。溅射靶包括具有径向内部，中部和外部区域的背面的溅射板和安装到溅射板的环形背板。背面具有多个彼此间隔开的圆形槽，以及至少一个弧形通道，其切割圆形槽并从溅射板的径向内部区域延伸到径向外部区域。环形背板限定暴露溅射板的背面的开口环。

52. 发明公开

EP3141630A1 SPUTTERING TARGET AND METHOD FOR PRODUCING SAME 有权
标题翻译： SPERTERTARGET UND VERFAHREN ZUR HERSTELLUNG DAVON
公开(公告)号：EP3141630A1
公开(公告)日：2017-03-15
申请号：EP16172411.7
申请日：2013-02-15
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Zhang, Shoubin , Umemoto, Keita , Shoji, Masahiro
IPC分类号： C23C14/34 , C23C14/06
CPC分类号： H01J37/3429 , B22F3/10 , B22F2201/20 , B22F2301/00 , B22F2999/00 , C22C1/0425 , C22C32/0089 , C23C14/0623 , C23C14/08 , C23C14/087 , C23C14/3414 , C23C14/35 , B22F3/1007
摘要： Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at% of Ga and 1.0 to 15 at% of Na as metal element components other than S and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium sulfide and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm 2 or higher, a bulk resistivity of 1 mΩ·cm or less, and a content of oxygen of 200 to 2000 ppm. The number of 0.05 mm 2 or larger aggregates of the Na compound present per cm 2 area of the target surface is 1 or less on average.
摘要翻译：提供了含有高浓度的Na的溅射靶，尽管如此，其抑制了变色，产生斑点，引起异常放电，并且具有高强度并且很少破裂。还提供了溅射靶的制造方法。溅射靶具有含有10〜40at％的Ga和1.0〜15at％的作为S和Se以外的金属元素成分的Na的组成成分，其余部分由Cu和不可避免的杂质组成，其中Na含有至少一种选自硫化钠和硒化钠的Na化合物的形式。溅射靶的理论密度比为90％以上，弯曲强度为100N / mm 2以上，体积电阻率为1μm·cm以下，氧含量为200〜2000ppm。目标表面的每cm 2面积存在的Na化合物的0.05mm 2以上聚集体的数量平均为1以下。

53. 发明公开

EP2980268A4 CYLINDRICAL SPUTTERING TARGET AND PROCESS FOR PRODUCING SAME 审中-公开
标题翻译： ZYLINDERFÖRMIGESSPUTTERTARGET UND VERFAHREN ZUR HERSTELLUNG DAVON
公开(公告)号：EP2980268A4
公开(公告)日：2016-11-30
申请号：EP14773134
申请日：2014-03-27
申请人： MITSUBISHI MATERIALS CORP
发明人： KATO SHINJI , ZHANG SHOUBIN , KOMIYAMA SHOZO
IPC分类号： C23C14/34 , B22D13/02 , C22C9/00
CPC分类号： H01J37/3429 , B22D11/004 , B22D11/006 , B22D13/02 , B22D13/023 , B22D21/025 , C22C9/00 , C23C14/0623 , C23C14/3414 , H01J37/3423
摘要： The cylindrical sputtering target is a Cu-Ga alloy cylindrical sputtering target made of a Cu alloy containing 15 atom% to 35 atom% of Ga, in which the Cu alloy has a granular crystal structure.
摘要翻译：圆筒形溅射靶是由Cu合金制成的Cu-Ga合金圆柱形溅射靶，其中Cu合金含有15原子％至35原子％的Ga，其中Cu合金具有粒状晶体结构。

54. 发明公开

EP3084517A1 W-NI-SPUTTERTARGET 审中-公开
公开(公告)号：EP3084517A1
公开(公告)日：2016-10-26
申请号：EP14838908.3
申请日：2014-12-17
申请人： Plansee SE
发明人： LINKE, Christian , SCHERER, Thomas
IPC分类号： G02F1/15 , B22F3/10 , C23C14/34
CPC分类号： C23C14/3414 , B22F3/1028 , B22F3/16 , B22F3/17 , B22F2998/10 , C22C1/0433 , C22C1/045 , C22C19/03 , C22C27/04 , C22F1/10 , C22F1/18 , C23C14/14 , G02F1/1523 , H01J37/3429 , B22F3/02
摘要： The invention relates to a method for producing a W-Ni sputter target and to the use thereof. The invention further relates to a sputter target containing 45 to 75 wt% W, the remainder consisting of Ni and common impurities. Said sputter target contains a Ni(W) phase, a W phase and no or less than 10% intermetallic phases.
摘要翻译：溅射靶包含45〜75重量％的W，剩余的Ni和常见的杂质。溅射靶包含Ni（W）相，W相和不少于10％的金属间相。还提供了制造W-Ni溅射靶的方法和使用溅射靶的工艺。

55. 发明公开

EP3075876A1 METHOD AND APPARATUS FOR DEPOSITING A MATERIAL 有权
标题翻译： VERFAHREN UND VORRICHTUNG ZUM AUFTRAGEN EINES材料
公开(公告)号：EP3075876A1
公开(公告)日：2016-10-05
申请号：EP16163357.3
申请日：2016-03-31
申请人： SPTS Technologies Limited
发明人： BURGESS, Stephen , HYNDMAN, Rhonda , RASTOGI, Amit , LIMA, Eduardo Paulo , WIDDICKS, Clive , RICH, Paul , HAYMORE, Scott , COOK, Daniel
IPC分类号： C23C14/35 , C23C14/34 , C23C14/06 , H01J37/34
CPC分类号： C23C14/0641 , C23C14/0617 , C23C14/3485 , C23C14/35 , C23C14/351 , H01J37/32669 , H01J37/3405 , H01J37/3429 , H01J37/345 , H01J37/3452 , H01J37/3461 , H01J37/3467 , H01J37/3476
摘要： 1. A method of depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields;
in which a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.
摘要翻译： 1.一种通过用产生一个或多个初级磁场的脉冲DC磁控管装置的脉冲DC磁控溅射将电介质材料沉积在腔室中的衬底上的方法; 其中溅射材料从靶溅射，其中所述靶和所述衬底被间隔在2.5至10cm的范围内分开，并且在所述腔室内产生二次磁场，这引起由所述脉冲DC磁控管装置产生的等离子体朝向腔室的一个或多个壁膨胀。

56. 发明公开

EP2954370A4 DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES 有权
标题翻译：缺陷减少电致变色器件LAYERS
公开(公告)号：EP2954370A4
公开(公告)日：2016-09-14
申请号：EP14749144
申请日：2014-02-07
申请人： VIEW INC
发明人： KAILASAM SRIDHAR K , FRIEDMAN ROBIN , GILLASPIE DANE , PRADHAN ANSHU A , ROZBICKI ROBERT T , MEHTANI DISHA
IPC分类号： G02F1/15
CPC分类号： G02F1/1533 , C23C14/028 , C23C14/06 , C23C14/0635 , C23C14/0641 , C23C14/0652 , C23C14/0676 , C23C14/08 , C23C14/081 , C23C14/083 , C23C14/086 , C23C14/34 , G02F1/1309 , G02F1/133345 , G02F1/15 , G02F1/1523 , G02F1/155 , G02F2001/1536 , G02F2001/1555 , G02F2201/508 , H01B5/14 , H01B13/00 , H01J37/3429 , H01J37/3476
摘要： Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

57. 发明授权

EP2674511B1 TITANIUM TARGET FOR SPUTTERING 有权
标题翻译： TITAN-SPUTTERTARGET
公开(公告)号：EP2674511B1
公开(公告)日：2016-09-14
申请号：EP12825485.1
申请日：2012-02-03
申请人： JX Nippon Mining & Metals Corporation
发明人： MAKINO Nobuhito , OKABE Takeo , TSUKAMOTO Shiro
IPC分类号： C23C14/34 , C22C14/00 , C23C14/14 , C22F1/18
CPC分类号： H01J37/3426 , C22C14/00 , C22F1/183 , C23C14/3407 , C23C14/3414 , H01J37/3429

58. 发明授权

EP2463255B1 TABLET FOR ION PLATING, METHOD FOR PRODUCING SAME, AND TRANSPARENT CONDUCTIVE FILM 有权
标题翻译： TABLET离子镀，METHOD用于生产和透明导电膜的
公开(公告)号：EP2463255B1
公开(公告)日：2016-09-07
申请号：EP10806386.8
申请日：2010-07-29
申请人： Sumitomo Metal Mining Co., Ltd.
发明人： NAKAYAMA Tokuyuki , ABE Yoshiyuki
IPC分类号： C04B35/00 , C23C14/32 , H01B5/14
CPC分类号： H01J37/3429 , C04B35/01 , C04B35/645 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3256 , C04B2235/3258 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/5436 , C04B2235/5445 , C04B2235/5472 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6581 , C04B2235/6585 , C04B2235/6586 , C04B2235/668 , C04B2235/77 , C04B2235/786 , C04B2235/95 , C04B2235/963 , C23C14/08 , C23C14/3414 , H01B1/08 , H01J1/00 , H01L31/022466 , H01L33/42

59. 发明公开

EP3048184A1 SPUTTERING TARGET OF SINTERED SB-TE-BASED ALLOY 有权
标题翻译： SPUTTERTARGET AUS EINER GESINTERTEN SB-TE-BASIERTEN LEGIERUNG
公开(公告)号：EP3048184A1
公开(公告)日：2016-07-27
申请号：EP15769919.0
申请日：2015-02-20
申请人： JX Nippon Mining & Metals Corporation
发明人： KOIDO Yoshimasa
IPC分类号： C23C14/34 , C22C1/04 , C22C12/00 , C22C28/00 , C22C32/00 , B22F1/00 , B22F3/14 , B22F9/08
CPC分类号： H01J37/3429 , B22F3/15 , B22F9/04 , B22F9/082 , B22F2009/044 , B22F2009/0848 , C22C1/04 , C22C12/00 , C22C28/00 , C23C14/0623 , C23C14/08 , C23C14/083 , C23C14/086 , C23C14/10 , C23C14/14 , C23C14/3414
摘要： Sb-Te-based alloy sintered sputtering target having a Sb content of 10 to 60 at%, a Te content of 20 to 60 at%, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 µm or less. An object of this invention is to improve the texture of the Sb-Te-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film.
摘要翻译： Sb含量为10〜60原子％，Te含量为20〜60原子％，余量为选自Ag，In，Ge中的一种或多种元素的Sb-Te系合金烧结溅射靶和不可避免的杂质其中，氧化物的平均粒径为0.5μm以下。本发明的目的是改善Sb-Te基合金烧结溅射靶的结构，以防止在溅射期间产生电弧并提高溅射膜的热稳定性。

60. 发明公开

EP2186917A4 METHOD FOR PRODUCING SINTERED BODY, SINTERED BODY, SPUTTERING TARGET COMPOSED OF THE SINTERED BODY, AND SPUTTERING TARGET-BACKING PLATE ASSEMBLY 有权转让
标题翻译：用于生产烧结体，烧结体从烧结体现行和溅射靶溅射靶材支撑板上安排
公开(公告)号：EP2186917A4
公开(公告)日：2016-07-20
申请号：EP08791262
申请日：2008-07-17
申请人： JX NIPPON MINING & METALS CORP
发明人： TAKAHASHI HIDEYUKI
IPC分类号： C22C1/04 , B22F3/14 , B22F7/04 , C22C12/00 , C22C28/00 , C23C14/34 , H01J37/34
CPC分类号： C23C14/3414 , B22F7/04 , B22F2998/10 , C22C1/0491 , C22C12/00 , C22C28/00 , C23C14/3407 , H01J37/3426 , H01J37/3429 , H01J37/3491 , B22F3/14

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