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51. 发明公开

EP1840247A2 Method of manufacturing silicon nanowires using porous glass template and device comprising silicon nanowires formed by the same 有权
标题翻译：一种用于使用多孔玻璃图案和设备将如此制备的硅纳米线的制造硅纳米线的方法
公开(公告)号：EP1840247A2
公开(公告)日：2007-10-03
申请号：EP07250520.9
申请日：2007-02-08
申请人： Samsung Electronics Co., Ltd.
发明人： Lee, Eun Kyung, Samsung Advanced Inst. of Technology , Kwon, Soon Jae, Samsung Advanced Inst. of Technology , Choi, Byoung Lyong, Samsung Advanced Inst. of Technology , Cho, Kyung Sang, Samsung Advanced Inst. of Technology , Lee, Jae Ho, Samsung Advanced Inst. of Technology
IPC分类号： C30B11/12 , C30B29/06
CPC分类号： C30B29/06 , B82Y10/00 , B82Y30/00 , C30B11/12 , C30B25/00 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L31/1804 , H01L33/20 , H01S5/10 , H01S5/3031 , Y02E10/547 , Y02P70/521 , Y10S977/762 , Y10S977/778 , Y10S977/78 , Y10S977/784 , Y10S977/785 , Y10S977/932 , Y10S977/949
摘要： Disclosed herein is a method of manufacturing silicon nanowires, which is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a device including silicon nanowires formed using the method is provided. The silicon nanowires manufactured according to this invention can be effectively applied to various devices, for example, electronic devices such as field effect transistors, sensors, photodetectors, light emitting diodes, laser diodes, etc.
摘要翻译：中公开了一种制造硅纳米线的方法，所有这些的特征在于DASS硅纳米线被形成和生长通过固 - 液 - 固工艺或使用具有纳米孔的多孔质玻璃模板的蒸汽 - 液体 - 固体处理掺杂有铒或铒前体。此外，提供了一种使用该方法形成于包括硅纳米线的装置。雅丁制造本发明中的硅纳米线可有效地应用于各种设备，例如，电子设备：诸如场效应晶体管，传感器，光电探测器，发光二极管，激光二极管等

52. 发明公开

EP1700935A1 Nano wires and method of manufacturing the same 有权
标题翻译： Nanodraht-Struktur und Verfahren zu ihrer Herstellung
公开(公告)号：EP1700935A1
公开(公告)日：2006-09-13
申请号：EP06251195.1
申请日：2006-03-07
申请人： Samsung Electronics Co., Ltd.
发明人： Choi, Byoung-lyong , Lee, Eun-kyung
IPC分类号： C30B11/12 , C30B29/60 , B82B3/00
CPC分类号： B82Y30/00 , C30B11/12 , C30B29/605 , Y10S977/721 , Y10S977/762 , Y10S977/768 , Y10S977/789 , Y10S977/81 , Y10S977/938
摘要： Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
摘要翻译：提供纳米线及其制造方法。该方法包括形成具有多个微腔的微槽，微槽在硅衬底的表面上形成规则图案; 通过沉积作为催化剂的材料在硅衬底上形成纳米线，在硅衬底上形成金属层; 通过加热金属层将硅衬底表面上的微槽内的金属层凝集成形成催化剂; 并使用热处理在催化剂和硅衬底之间生长纳米线。

53. 发明公开

EP1634334A1 NANOWHISKERS WITH PN JUNCTIONS AND METHODS OF FABRICATING THEREOF 审中-公开
标题翻译：与PN转换和方法的制备纳米SCHNURR发
公开(公告)号：EP1634334A1
公开(公告)日：2006-03-15
申请号：EP04725089.9
申请日：2004-04-01
申请人： Startskottet 22286 AB
发明人： SAMUELSON, Lars, Ivar , OHLSSON, Bjorn, Jonas , LEBEBO, Lars-Ake
IPC分类号： H01L29/06 , H01L29/861 , C30B29/62
CPC分类号： H01L29/0665 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/62 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02653 , H01L21/2258 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/861 , H01L29/885 , Y10S977/932
摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.

54. 发明公开

EP1613549A1 PRECISELY POSITIONED NANOWHISKERS AND NANOWHISKER ARRAYS AND METHOD FOR PREPARING THEM 有权
标题翻译：精密POSITIONED纳米晶须结构及其制造方法
公开(公告)号：EP1613549A1
公开(公告)日：2006-01-11
申请号：EP04700471.8
申请日：2004-01-07
申请人： Startskottet 22286 AB
发明人： SAMUELSON, Lars, Ivar , OHLSSON, Björn, Jonas , MARTENSSON, Thomas, Martin, Ingvar
IPC分类号： B82B3/00 , C30B11/12 , C30B29/62
CPC分类号： C30B11/00 , B82Y10/00 , B82Y30/00 , C30B11/12 , C30B29/40 , C30B29/605
摘要： A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbour. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface. A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbour. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface.

55. 发明公开

EP1428912A9 Method of preparing a compound semiconductor crystal doped with carbon 有权
标题翻译：制备掺杂碳的化合物半导体晶体的方法
公开(公告)号：EP1428912A9
公开(公告)日：2004-09-08
申请号：EP04003550.3
申请日：1999-03-23
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Kawase, Tomohiro , Sawada, Shinichi , Tatsumi, Masami
IPC分类号： C30B29/42 , C30B27/00 , C30B11/12 , C30B11/00
CPC分类号： C30B29/42 , C30B11/06 , C30B11/12
摘要： There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing a semiconductor raw material and a boron oxide based substance in a gas-impermeable airtight vessel and increasing a temperature of said airtight vessel to melt said raw material and said boron oxide based substance in said airtight vessel and thereby form a melted material from said raw material; and decreasing said temperature of said airtight vessel to solidify said melted material and thereby grow said compound semiconductor crystal containing a resultant content of said carbon, selecting a partial pressure of a carbon oxide gas, and making said carbon oxide gas coexistent with said melted material, so that said resultant content of said carbon is dependent on said selected partial pressure of said carbon oxide gas. With this method, a compound semiconductor crystal with a carbon concentration of 0.1 X 10 15 cm -3 to 20 X 10 15 cm -3 is also prepared in high reproducibility.

56. 发明授权

EP1049820B1 PRODEDE DE CROISSANCE CRISTALLINE SUR SUBSTRAT 有权
标题翻译： CRYSTAL增长对基板的方法
公开(公告)号：EP1049820B1
公开(公告)日：2003-08-20
申请号：EP99956144.2
申请日：1999-11-25
申请人： Centre National de la Recherche Scientifique (CNRS)
发明人： LEYCURAS, André
IPC分类号： C30B11/00 , C30B11/12 , C30B19/02 , C30B29/36 , C30B25/02
CPC分类号： C30B25/105 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/12 , C30B19/00 , C30B29/36 , C30B29/38
摘要： The invention concerns a method for epitaxial growth of a material on a first solid material (100) from a material melting on the first material (100), characterised in that it comprises: a step (a) of growth of the first material (100) on a substrate (10), made of a second material (200); a step (d, d') whereby crystalline tips of the first material (100) are made to grow from the contact surface between the first material (100) and the melting material; a step (f, f') which consists in causing crystals to grow laterally from the crystalline tips in a plane parallel to that of the free surface of the melting material.

57. 发明公开

EP0843748A1 VERFAHREN ZUR HERSTELLUNG VON KRISTALLINEN SCHICHTEN 失效
标题翻译：用于生产晶体层
公开(公告)号：EP0843748A1
公开(公告)日：1998-05-27
申请号：EP96931737.0
申请日：1996-07-26
申请人： Forschungsverbund Berlin e.V.
发明人： BOECK, Torsten , SCHMIDT, Klaus , BRAUN, Andreas
IPC分类号： C30B11
CPC分类号： C30B11/12
摘要： The invention concerns a method of producing large-area crystalline layers on economical carriers, in particular for constructing high-efficiency solar cells. According to the invention, in order to produce the locally selective nucleation centres on the substrate surface, a solvent is disposed in a structured manner, the substance to be crystallized is then deposited, dissolves and crystallites are formed at the solution/substrate interface. Finally, these crystallites undergo epitaxial growth to form a completely closed crystalline layer. In order to dispose a solvent in a structured manner on the substrate surface, either a solvent is applied which is then structured in droplet form or first a surface relief in the form of conical or pyramidal depressions is produced and a layer of solvent is then applied to the structured substrate surface.

58. 发明公开

EP0713542A1 CRYSTALLINE MULTILAYER STRUCTURE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：晶多层结构及其制造方法
公开(公告)号：EP0713542A1
公开(公告)日：1996-05-29
申请号：EP94913850.0
申请日：1994-04-27
申请人： Centrum badan Wysokocisnieniowych
发明人： POROWSKI, Sylwester , JUN, Jan , GRZEGORY, Izabella , KRUKOWSKI, Stanislaw , WROBLEWSKI, Miroslaw
IPC分类号： C30B29 , C23C16 , C30B11 , H01L21 , H01L33 , H01S5
CPC分类号： H01L33/325 , C30B11/12 , C30B29/403 , C30B29/406 , H01L33/0075
摘要： A process for fabricating a multilayer crystalline structure of nitrides of metals from group III of periodic table including GaN, AlN and InN is provided. The process includes the steps of heating a group III metal (26) to a temperature T1 under an equilibrium nitrogen pressure while maintaining group III metal nitride stability to form a first crystal layer of the group III metal nitride. Thereafter the method includes the step of forming a second crystal layer (28) of the group III metal nitride by decreasing the nitrogen pressure such that the second crystal layer grows on the first layer with a growth rate slower than the growth rate of the first layer at a temperature T2 not greater than temperature T1. The second layer (28) grows on at least a portion of the first layer at a predetermined thickness under the new nitrogen pressure.

59. 发明授权

EP0443920B1 Procédé de croissance controlée de cristaux aciculaires, et application à la réalisation de microcathodes à pointes 失效
标题翻译：过程为针状晶体的受控生长，以及它们用于生产成型尖端微阴极使用。
公开(公告)号：EP0443920B1
公开(公告)日：1994-11-02
申请号：EP91400395.9
申请日：1991-02-15
申请人： THOMSON-CSF
发明人： Pribat, Didier , Leclerc, Pierre , Legagneux, Pierre , Collet, Christian
IPC分类号： C30B11/12 , C30B29/62 , H01J9/02
CPC分类号： H01J9/025 , C30B11/12 , C30B23/007 , C30B25/005 , C30B29/06

60. 发明公开

EP0573424A1 CORELESS REFRACTORY FIBRES 失效
标题翻译：无核耐火纤维。
公开(公告)号：EP0573424A1
公开(公告)日：1993-12-15
申请号：EP91913549.0
申请日：1991-07-18
申请人： THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN
发明人： HOCKING, Michael, Gwyn 2 Boxgrove Road , SIDKY, Paulette, Shafik Glebe Lodge
IPC分类号： C04B35 , C23C16 , C30B11 , C30B25
CPC分类号： C04B35/62227 , C23C16/46 , C23C16/545 , C30B11/12 , C30B25/005
摘要： On fabrique une fibre réfractaire sans noyau en introduisant un filament (16) d'un matériau de matrice dans une enceinte de dépôt de vapeur chimique (CVD) (10) et en chauffant ensuite l'extrémité (21) du filament au moyen d'une source de chauffage sans contact. La source comprend une bobine conductrice connectée à une source de courant alternatif dans une plage de fréquence située entre HF et UHF et à laquelle est connecté un élément conducteur linéaire ou sous forme de bande (110), de façon que l'extrémité de l'élément soit contiguë à l'extrémité (21) du filament. On retire alors le filament (16) pour que le matériau réfractaire se dépose de façon continue à son extrémité, à partir des vapeurs chimiques de l'enceinte pour produire une fibre réfractaire sans noyau. On peut produire des barbes de matériau réfractaire sans noyau en introduisant des particules fines d'un catalyseur sur une plate-forme (22) à l'intérieur d'une enceinte de dépôt de vapeur chimique (CVD) (25), en fusionnant le catalyseur pour former des gouttelettes et, ensuite, en introduisant des gaz de CVD dans les gouttelettes (30) pour provoquer une croissance cristalline par précipitation du liquide sursaturé. L'extrémité du matériau précipité à l'intérieur de l'enceinte est chauffé au moyen d'un élément conducteur linéaire monté verticalement et présentant un disque conducteur (111) à son extrémité libre, contigu et parallèle à la plate-forme (22). On déplace alors la plate-forme verticalement depuis la source de chaleur pour maintenir constante la séparation des gouttelettes (30) de la source de chaleur (111) en même temps que la vapeur chimique se dépose continuellement sous les gouttelettes (30) à partir des vapeurs chimiques de l'enceinte pour former des barbes.

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