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41. 发明公开

EP1793491A1 Amplifier with compensated gate bias voltage 审中-公开
标题翻译： Verstärkermit kompensierter Gatearbeitsspannung
公开(公告)号：EP1793491A1
公开(公告)日：2007-06-06
申请号：EP05077761.4
申请日：2005-12-02
申请人： Nederlandse Organisatie voor Toegepast-Natuurwetenschappelijk Onderzoek TNO
发明人： Busking, Erik Bert , de Hek, Andries Peter
IPC分类号： H03F1/30 , H03F3/16
CPC分类号： H03F1/301 , H03F3/193 , H03F2200/18 , H03F2200/451
摘要： An amplifier circuit has an amplifier stage (10), comprising an amplifier transistor (104) with a gate coupled to an input (100) of the amplifier stage (10), a source coupled to a reference connection (gnd) and a drain coupled to a positive power supply connection (V+). A bias stage (12) is provided comprising a bias transistor (120), a drain resistance (124) and a source resistance (122), the bias transistor (120) having a gate coupled to a negative power supply connection (V-), a source coupled to the negative power supply connection (V-) via the source resistance (122) and a drain coupled to the reference connection (gnd) via the drain resistance (124) and to the gate of the amplifier transistor (104). The bias stage comprises a further resistance (20, 22), coupled from a node between the source of the bias transistor and the source resistance of the bias transistor (120) to a circuit node that carries a voltage higher than the voltage at the negative power supply connection.
摘要翻译：放大器电路具有放大器级（10），包括放大器晶体管（104），其栅极耦合到放大器级（10）的输入端（100），耦合到参考连接（gnd）和漏耦合到正电源连接（V +）。提供偏置级（12），其包括偏置晶体管（120），漏极电阻（124）和源极电阻（122），偏置晶体管（120）具有耦合到负电源连接（V-）的栅极，，经由源极电阻（122）耦合到负电源连接（V-）的源极和经由漏极电阻（124）耦合到参考连接（gnd）的漏极和放大器晶体管（104）的栅极，。偏置级包括从偏置晶体管的源极和偏置晶体管（120）的源极之间的节点耦合到电路节点的另外的电阻（20,22），该电路节点承载的电压高于负极电源连接。

42. 发明公开

EP1518322A1 FAST CASCADED CLASS AB OUTPUT STAGE WITH FET DEVICES 有权
标题翻译：与AB类FET器件FAST级联输出级
公开(公告)号：EP1518322A1
公开(公告)日：2005-03-30
申请号：EP03715264.2
申请日：2003-04-28
申请人： Koninklijke Philips Electronics N.V.
发明人： GOVIL, Alok
IPC分类号： H03F3/16 , H03F1/32
CPC分类号： H03F3/345 , H03F1/0205 , H03F1/3217 , H03F3/16 , H03F3/3011
摘要： A set of class AB output stages are cascaded to provide a class AB device circuit which utilizes relatively small transistors, low power, and virtually eliminates crossover distortion. The input may be powered by a voltage or a current source.

43. 发明授权

EP0123874B1 Vorrichtung zur Erzeugung einer Gate-Vorspannung an Feldeffekttransistoren 有权
标题翻译：用于产生现场效应晶体管的栅极偏置电压的装置
公开(公告)号：EP0123874B1
公开(公告)日：1990-11-28
申请号：EP84103114.9
申请日：1984-03-21
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Zimmermann, Walter, Ing.grad.
IPC分类号： H03K17/687 , H03K17/78 , H03F3/08 , H03F3/16
CPC分类号： H03F3/082 , H03F3/1935

44. 发明公开

EP0221632A1 Multifunction floating fet circuit 失效转让
标题翻译：电路中具有多种功能的浮动安排FET。
公开(公告)号：EP0221632A1
公开(公告)日：1987-05-13
申请号：EP86305973.9
申请日：1986-08-01
申请人： HAZELTINE CORPORATION
发明人： Vasile, Carmine F.
IPC分类号： H03F3/16 , H03F3/26 , H03C1/54
CPC分类号： H03F3/265
摘要： A transistor circuit is provided with a symmetrical floating configuration for attaining multi-function operation of a transistor (20) having symmetrical source and drain characteristics, preferably a GaAs MESFET. The circuit includes a balun (30) which may be configured as a transformer, a differential amplifier, or a magic-tee waveguide depending on the frequency of signals to be processed by the circuit. Balanced terminals of the balun may be directly or capacitively coupled to source and drain terminals of the transistor (20). Tuning circuits (70, 72) are employed for applying signals having different frequencies to the transistor and for extracting intermodulation products generated by the transistor in response to the signals at the different frequencies. With the direct connection between the balun and the transistor, alternating voltages (via E, F, G) may be impressed between the terminals of the transistor to alternate source and drain regions of the transistor. Functions of amplification, modulation, bipolar attenuation, four-quadrant multiplication and correlation, power frequency tripling, and mixing are obtainable. The transistor may be replaced with a pair of transistors connected in series or in antiparallel connection.

45. 发明授权

EP0020778B1 AMPLIFIER CIRCUIT 失效
公开(公告)号：EP0020778B1
公开(公告)日：1983-12-07
申请号：EP79901519.3
申请日：1979-11-06
申请人： FUJITSU LIMITED
发明人： ASAMI, Fumitaka
IPC分类号： H03F3/16 , H03F3/72 , H04B1/06
CPC分类号： H03F3/16 , H03F3/345 , H03F3/72
摘要： An amplifier circuit of two-stage cascaded inverters consisting of series connected P channel and N channel transistors. The amplifier circuit includes transistors (N1, P4) for connecting respective gate electrodes of transistors (P2, N2) in the first stage inverter to their own drain electrodes by means of control signals when the amplifier is in operation, and also includes transistors (P1, N4) for connecting the respective gate electrodes of the transistors (P2, N2) to a potential which interrupts the transistors (P2, N2) when the amplifier is not in operation.

46. 发明公开

EP0020778A4 AMPLIFIER CIRCUIT. 失效
标题翻译：放大器电路。
公开(公告)号：EP0020778A4
公开(公告)日：1981-03-24
申请号：EP79901519
申请日：1980-06-04
申请人： FUJITSU LTD
发明人： ASAMI FUMITAKA
IPC分类号： H03F3/16 , H03F3/34 , H03F3/345 , H03F3/72 , H03K19/0948 , H04B1/06
CPC分类号： H03F3/16 , H03F3/345 , H03F3/72

48. 发明公开

EP3853948A1 ACTIVE WIDEBAND ANTENNA 审中-实审
公开(公告)号：EP3853948A1
公开(公告)日：2021-07-28
申请号：EP19862062.7
申请日：2019-08-29
申请人： HRL Laboratories LLC
发明人： WHITE, Carson R. , SONG, Hyok J.
IPC分类号： H01Q5/50 , H01Q5/335 , H01Q23/00 , H03F3/16

49. 发明公开

EP3853947A1 ACTIVE VIVALDI ANTENNA 审中-公开
公开(公告)号：EP3853947A1
公开(公告)日：2021-07-28
申请号：EP19862304.3
申请日：2019-08-29
申请人： HRL Laboratories LLC
发明人： WHITE, Carson R.
IPC分类号： H01Q5/335 , H01Q23/00 , H03F3/16

50. 发明公开

EP3639367A2 A SUPPLY CIRCUIT 审中-公开
公开(公告)号：EP3639367A2
公开(公告)日：2020-04-22
申请号：EP18889107.1
申请日：2018-07-02
申请人： Aselsan Elektronik Sanayi ve Ticaret Anonim Sirketi
发明人： AKTU , Ahmet , AYDOGAN, Yigit
IPC分类号： H03F3/16

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