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41. 发明公开

EP3966863A1 III-V SEMICONDUCTOR DEVICE WITH INTEGRATED PROTECTION FUNCTIONS 审中-实审
公开(公告)号：EP3966863A1
公开(公告)日：2022-03-16
申请号：EP20724805.5
申请日：2020-05-07
申请人： Cambridge Gan Devices Limited
发明人： UDREA, Florin , EFTHYMIOU, Loizos , LONGOBARDI, Giorgia , ARNOLD, Martin
IPC分类号： H01L27/085 , H01L29/10 , H01L29/20 , H01L29/423 , H01L29/778 , H01L21/8252 , H01L27/06 , H01L27/02 , H03K17/0814 , H03K17/082 , H03K17/687 , H01L27/088

42. 发明公开

EP3824493A1 MONOLITHIC MICROWAVE INTEGRATED CIRCUITS HAVING BOTH ENHANCEMENT-MODE AND DEPLETION MODE TRANSISTORS 无效转让
公开(公告)号：EP3824493A1
公开(公告)日：2021-05-26
申请号：EP19728797.2
申请日：2019-05-14
申请人： Cree, Inc.
发明人： SRIRAM, Saptharishi , GAO, Jennifer , FISHER, Jeremy , SHEPPARD, Scott
IPC分类号： H01L21/8252 , H01L27/06 , H01L27/085 , H01L29/20 , H01L29/778 , H01L29/40 , H01L27/088

43. 发明公开

EP3709371A1 SEMICOMNDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME 审中-公开
公开(公告)号：EP3709371A1
公开(公告)日：2020-09-16
申请号：EP19162743.9
申请日：2019-03-14
申请人： Infineon Technologies Dresden GmbH & Co . KG
发明人： Mahmoud, Ahmed , Weis, Rolf , Willmeroth, Armin
IPC分类号： H01L29/808 , H01L29/10 , H01L29/06 , H01L27/085
摘要： A semiconductor device comprises a layer stack with a plurality of first semiconductor layers (110) of a first doping type and a plurality of second semiconductor layers (120) of a second doping type complementary to the first doping type. The semiconductor device further comprises a first semiconductor region (15) of a first semiconductor device (M1) adjoining the plurality of first semiconductor layers (110), at least one second semiconductor region (14) of the first semiconductor device (M1), wherein each of the at least one second semiconductor region (14) adjoins at least one of the plurality of second semiconductor layers (120), and is spaced apart from the first semiconductor region (15), and a third semiconductor layer (130) adjoining the layer stack (110, 120) and each of the first semiconductor region (15) and the at least one second semiconductor region (14), wherein the third semiconductor layer (130) comprises a first region (131) arranged between the first semiconductor region (15) and the at least one second semiconductor region (14) in a first direction (x). The semiconductor device further comprises a third semiconductor region (140, 142) of the first or the second doping type, extending from a first surface (101) of the third semiconductor layer (130) into the first region (131).

44. 发明公开

EP3639298A1 MEMORY CELLS WHICH INCLUDE TRANSISTORS HAVING GAP CHANNEL MATERIAL 审中-实审
公开(公告)号：EP3639298A1
公开(公告)日：2020-04-22
申请号：EP18839130.4
申请日：2018-07-06
申请人： Micron Technology, Inc.
发明人： SANDHU, Gurtej, S. , ROBERTS, Martin, C.
IPC分类号： H01L27/06 , H01L27/085

45. 发明授权

EP2518880B1 INTEGRATED POWER STAGE 有权转让
公开(公告)号：EP2518880B1
公开(公告)日：2019-09-11
申请号：EP12165466.9
申请日：2012-04-25
申请人： Infineon Technologies Americas Corp.
发明人： Briere, Michael A.
IPC分类号： H01L21/8258 , H01L23/00 , H01L27/06 , H01L27/085 , H01L27/092 , H02M7/00

46. 发明公开

EP3245738A1 A SEMICONDUCTOR LOGIC ELEMENT AND A LOGIC CIRCUITRY 无效
标题翻译：一个半导体逻辑元件和一个逻辑电路
公开(公告)号：EP3245738A1
公开(公告)日：2017-11-22
申请号：EP16737119.4
申请日：2016-01-13
申请人： Hyperion Semiconductors OY
发明人： AUROLA, Artto Mikael
IPC分类号： H03K19/094 , H01L27/085 , H03K19/003 , H03K19/20 , H03K19/0952
CPC分类号： H03K19/018521 , H01L27/0207 , H01L27/0629 , H01L27/092 , H01L27/098 , H01L27/1203 , H01L29/0649 , H01L29/0692 , H01L29/1033 , H01L29/36 , H01L29/78 , H01L29/808 , H01L29/8083 , H03K19/0013 , H03K19/00315 , H03K19/094 , H03K19/0952 , H03K19/20
摘要： Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.

47. 发明公开

EP2878009A1 MONOLITHIC INTEGRATED CIRCUIT CHIP INTEGRATING MULTIPLE DEVICES 有权
标题翻译：与多个设备单片集成电路芯片
公开(公告)号：EP2878009A1
公开(公告)日：2015-06-03
申请号：EP13731186.6
申请日：2013-05-24
申请人： Raytheon Company
发明人： SAUNDERS, Jeffrey, H.
IPC分类号： H01L21/8258 , H01L27/06 , H01L27/085
CPC分类号： H01L21/8258 , G01S7/032 , H01L27/0605 , H01L27/0623 , H01L27/085 , H01L2924/0002 , H01L2924/00
摘要： A monolithic integrated circuit (IC) chip containing a plurality of transistors, including: a substrate; a first transistor on the substrate; and a second transistor integrally formed on the substrate with the first transistor, the second transistor having a different structure than the first transistor, wherein the first transistor includes a first material system and the second transistor includes a second material system different from the first material system. The monolithic IC chip may further include a third transistor integrally formed on the substrate with the first and second transistors. The first transistor may include gallium nitride (GaN) and the second and third transistors may include silicon carbide (SiC).

48. 发明公开

EP2388819A3 Low noise amplifier including group III nitride based high electron mobility transistors 有权转让
标题翻译：对III族氮化物晶体管的低噪声放大器基于高电子迁移率
公开(公告)号：EP2388819A3
公开(公告)日：2014-01-22
申请号：EP11166756.4
申请日：2011-05-19
申请人： Cree, Inc.
发明人： Fisher, Jeremy
IPC分类号： H01L27/06 , H01L27/085 , H03F3/195 , H01L29/778 , H01L29/423 , H01L29/40 , H01L29/20
摘要： A low noise amplifier includes a first Group III-nitride based transistor and a second Group III-nitride based transistor coupled to the first Group III-nitride based transistor. The first Group III-nitride based transistor is configured to provide a first stage of amplification to an input signal, and the second Group III-nitride based transistor is configured to provide a second stage of amplification to the input signal.

49. 发明公开

EP2390919A2 III-Nitride switching device with an emulated diode 审中-公开
标题翻译： III-Nitrid-Schaltvorrichtung mit emulierter二极管
公开(公告)号：EP2390919A2
公开(公告)日：2011-11-30
申请号：EP11003177.0
申请日：2011-04-15
申请人： International Rectifier Corporation
发明人： Zhang, Jason
IPC分类号： H01L27/085 , H03K17/687
CPC分类号： H01L27/0255 , H01L21/8252 , H01L27/0605 , H01L27/0629 , H01L27/085 , H01L29/2003 , H01L29/205 , H01L29/7787 , H01L29/872 , H03K17/687
摘要： Some exemplary embodiments of a III-nitride switching device with an emulated diode have been disclosed. One exemplary embodiment comprises a GaN switching device fabricated on a substrate comprising a high threshold GaN transistor (340) coupled across a low threshold GaN transistor (346), wherein a gate and a source of the low threshold GaN transistor are shorted with an interconnect metal to function as a parallel diode in a reverse mode. The high threshold GaN transistor is configured to provide noise immunity for the GaN switching device when in a forward mode. The high threshold GaN transistor and the low threshold GaN transistor are typically fabricated on the same substrate, and with significantly different thresholds. As a result, the superior switching characteristics of III-nitride devices may be leveraged while retaining the functionality and the monolithic structure of the inherent body diode in traditional silicon FETs.
摘要翻译：已经公开了具有仿真二极管的III族氮化物开关器件的一些示例性实施例。一个示例性实施例包括制造在包括耦合在低阈值GaN晶体管（346）上的高阈值GaN晶体管（340）的衬底上的GaN开关器件，其中低阈值GaN晶体管的栅极和源极与互连金属在反向模式下用作并联二极管。高阈值GaN晶体管被配置为当处于正向模式时为GaN开关器件提供抗噪声性。高阈值GaN晶体管和低阈值GaN晶体管通常制造在相同的衬底上，并具有明显不同的阈值。因此，可以利用III族氮化物器件的优异的开关特性，同时保持传统硅FET中固有体二极管的功能和单片结构。

50. 发明公开

EP2388819A2 Low noise amplifier including group III nitride based high electron mobility transistors 有权转让
标题翻译：翻译者Verstärkermit Transistoren auf Gruppe III-Nitrid-Basis mit hoher Elektronenbeweglichkeit
公开(公告)号：EP2388819A2
公开(公告)日：2011-11-23
申请号：EP11166756.4
申请日：2011-05-19
申请人： Cree, Inc.
发明人： Fisher, Jeremy
IPC分类号： H01L27/06 , H01L27/085
摘要： A low noise amplifier includes a first Group III-nitride based transistor and a second Group III-nitride based transistor coupled to the first Group III-nitride based transistor. The first Group III-nitride based transistor is configured to provide a first stage of amplification to an input signal, and the second Group III-nitride based transistor is configured to provide a second stage of amplification to the input signal.
摘要翻译：低噪声放大器包括第一基于III族氮化物的晶体管和耦合到第一III族氮化物基晶体管的第二III族氮化物基晶体管。第一III族氮化物基晶体管被配置为向输入信号提供第一级放大，并且第二III族氮化物晶体管被配置为向输入信号提供第二级放大。

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