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41. 发明公开

EP4297619A2 SURFACE COATING OF DRINKWARE 审中-实审
公开(公告)号：EP4297619A2
公开(公告)日：2024-01-03
申请号：EP22712687.7
申请日：2022-03-03
申请人： Yeti Coolers, LLC
发明人： BRUNET, Colby
IPC分类号： A47J36/02 , C23C16/27 , A47J41/02 , B65D81/38 , C23C16/04 , C23C16/26 , C23C16/509

42. 发明公开

EP4296272A1 SUBSTRATE WITH THIN FILM, AND SEMICONDUCTOR SUBSTRATE 审中-实审
公开(公告)号：EP4296272A1
公开(公告)日：2023-12-27
申请号：EP22756316.0
申请日：2022-02-21
申请人： Nissan Chemical Corporation
发明人： SHIBAYAMA Wataru , TAKEDA Satoshi , SHIGAKI Shuhei , ISHIBASHI Ken , KATO Kodai , NAKAJIMA Makoto , SAKAMOTO Rikimaru
IPC分类号： C07F7/18 , H01L21/31 , H01L21/312 , C23C16/42
摘要： A substrate with a thin film, including
the thin film including a Si-R 1 group of a compound represented by Formula (1), and
the substrate including the thin film including the Si-R 1 group, the thin film being disposed on a surface of the substrate,

Si(R 1 )(R 2 ) n (R 3 ) 3-n · · · Formula (1)

where in Formula (1), R 1 represents a monovalent organic group that bonds to Si; R 2 represents a monovalent organic group that bonds to Si; R 3 represents an alkoxy group, an acyloxy group, or a halogen atom that bonds to Si; n represents an integer from 0 to 2; when n is 2, R 2 may be the same or different; when n is 0 or 1, R 3 may be the same or different; and when n is 1, R 1 and R 2 may bond together to form a ring structure.

43. 发明公开

EP4292127A1 ELECTROSTATIC CHUCK WITH METAL BOND 审中-实审
公开(公告)号：EP4292127A1
公开(公告)日：2023-12-20
申请号：EP22753100.1
申请日：2022-01-10
申请人： Applied Materials, Inc.
发明人： PARKHE, Vijay, D.
IPC分类号： H01L21/683 , H01L21/67 , H01L21/687 , H05B3/26 , C23C16/458 , H01J37/32

44. 发明授权

EP3527859B1 SLIDING COMPONENT 有权转让
公开(公告)号：EP3527859B1
公开(公告)日：2023-12-20
申请号：EP17859594.8
申请日：2017-09-29
发明人： ITADANI, Masatoshi , SUNAGAWA, Kazumasa , OKADA, Tetsuzo , CHIBA, Keiichi , KIRYU, Kenji , KIMURA, Tadahiro , KOGA, Akiko
IPC分类号： F16C33/72 , F16J15/34 , C23C16/27

45. 发明公开

EP4290589A1 SOLAR CELL AND MANUFACTURING METHOD THEREFOR 审中-实审
公开(公告)号：EP4290589A1
公开(公告)日：2023-12-13
申请号：EP22788312.1
申请日：2022-04-04
申请人： Jusung Engineering Co., Ltd.
发明人： KIM, Jae Ho
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18 , H01L51/42 , H01L51/44 , C23C14/04 , C23C16/04
摘要： The present invention provides a solar cell and a manufacturing method therefor, the solar cell comprising: a semiconductor substrate; a first transparent electrode layer provided on one surface of the semiconductor substrate; and a first electrode provided on one surface of the first transparent electrode layer, wherein the first electrode comprises a first pattern layer pattern-formed through a deposition process using a shadow mask.

46. 发明公开

EP4287784A1 MICROWAVE PLASMA TREATMENT DEVICE 审中-实审
公开(公告)号：EP4287784A1
公开(公告)日：2023-12-06
申请号：EP22745881.7
申请日：2022-01-25
申请人： National Institute Of Advanced Industrial Science and Technology
发明人： YAMADA, Hideaki , CHAYAHARA, Akiyoshi , MOKUNO, Yoshiaki
IPC分类号： H05H1/46 , C23C16/511
摘要： A microwave plasma treatment device includes a resonator including a container; a single microwave oscillation source that outputs a reference microwave; a waveguide that connects the microwave oscillation source and the resonator to each other; and a phase control mechanism that generates a modified microwave having a phase different from a phase of the reference microwave by controlling the phase of the reference microwave. The resonator includes one or more first-type introducing portions for introducing the reference microwave into the resonator and one or more second-type introducing portions for introducing the modified microwave into the resonator, and the microwave plasma treatment device is configured such that at least one of a position, a size, and a shape of a plasma ball generated in the container is changed by superimposing the modified microwave on the reference microwave in the resonator.

47. 发明公开

EP4253597A3 COMPOSITIONS AND METHODS USING SAME FOR CARBON DOPED SILICON CONTAINING FILMS 审中-实审
公开(公告)号：EP4253597A3
公开(公告)日：2023-12-06
申请号：EP23187485.0
申请日：2017-07-26
申请人： Versum Materials US, LLC
发明人： CHANDRA, Haripin , LEI, Xinjian , MALLIKARJUNAN, Anupama , KIM, Moo-Sung
IPC分类号： H01L21/02 , C23C16/34 , C23C16/36 , C23C16/455 , C23C16/40 , C23C16/30 , C23C16/56
摘要： A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (

48. 发明授权

EP3870541B1 TUNGSTEN METAL/TUNGSTEN NITRIDE ENHANCED PLATINUM-BASED ORR CATALYST AND METHOD FOR MAKING THE SAME 有权
公开(公告)号：EP3870541B1
公开(公告)日：2023-12-06
申请号：EP19876661.0
申请日：2019-10-25
发明人： WEIMER, Alan W. , MCNEARY, William
IPC分类号： H01M4/86 , H01M4/88 , H01M4/92 , C23C16/34 , C23C16/56 , C23C16/455 , H01M8/10

49. 发明授权

EP3815806B1 TOOL WITH THROUGH HOLE COMPRISING A DIAMOND COMPONENT 有权
公开(公告)号：EP3815806B1
公开(公告)日：2023-11-29
申请号：EP19826076.2
申请日：2019-06-25
发明人： NOHARA, Takuya , UEDA, Akihiko , KOBAYASHI, Yutaka , NISHIBAYASHI, Yoshiki
IPC分类号： B21C3/02 , C01B32/25 , C23C16/27 , C30B29/04

50. 发明公开

EP4279451A1 METHOD FOR PRODUCING AT LEAST ONE CRACK-FREE SIC PIECE 审中-公开
公开(公告)号：EP4279451A1
公开(公告)日：2023-11-22
申请号：EP22173970.9
申请日：2022-05-18
申请人： Zadient Technologies SAS
发明人： Ceran, Kagan , Schaaf, Friedrich
IPC分类号： C01B32/963 , C01B32/977 , C23C16/32
摘要： The present invention refers to a method for producing at least one crack-free SiC piece at least comprising the steps:
Providing a CVD reactor, wherein the CVD reactor comprises at least one SiC growth substrate, wherein the at least one SiC growth substrate comprises a main body, a first power connection and a second power connection, wherein the main body has a main body length, wherein the main body length extends between the first power connection and the second power connection, wherein the first power connection is configured to conduct power into the main body for heating the main body and wherein the second power connection is configured to conduct electric power conducted via the first power connection into the main body out of the main body, wherein the main body forms a physical structure, wherein the physical structure forms a deposition surface for deposition of SiC, Growing a SiC solid by depositing SiC on the physical structure in the CVD reactor, wherein the at least one crack-free SiC piece is part of the SiC solid, wherein the deposited SiC has a minimal thickness of at least 1cm, wherein the at least one SiC piece is formed between a first plane and a second plane, wherein the first plane is perpendicular to the main body length and wherein the second plane is perpendicular to the main body length, wherein the distance between the first plane and the second plane is at least 1% of the main body length, Removing the at least one crack-free SiC piece from the SiC solid, wherein the at least one crack-free SiC piece has a cross-sectional size of at least 4cm2 and a thickness of at least 0,1cm.

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