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    • 45. 发明公开
    • Information recording medium, method of manufacturing the same, and sputtering target
    • Informationsaufzeichnungsmedium,Herstellungsverfahren und Sputtertarget hierzu
    • EP1523002A3
    • 2006-11-02
    • EP04022395.0
    • 2004-09-21
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • Uno, MayumiKojima, RieYamada, Noboru
    • G11B7/24G11B7/26C23C14/08B41M5/26
    • C23C14/3414C23C14/0036C23C14/08G11B7/243G11B7/26G11B2007/24316G11B2007/2432
    • When manufacturing a write-once recording medium which contains an oxide having a lower oxygen content as a main component, if film formation of a recording layer is performed by introducing a large amount of oxygen into the film forming gas and the sputtering target does not contain oxygen, each medium produced has different properties, because a variation of oxygen flow in the gas easily occurs and the composition ratio of oxygen which is contained in the recording layer easily varies.
      To solve the problems above, an information recording medium, having at least a recording layer on a substrate and being able to record and reproduce information, contains an oxide A-O or A-O-M (A is a material which contains at least any one of Te, Sb, Ge, Sn, In, Zn, Mo and W, and M is a material which contains at least any one of a metal element, a semi-metal element, and a semiconductor-metal element), and a sputtering target used in the process of producing the layer contains at least A-O and, A and /or M. In this way, a recording layer having high reproducibility and stable properties can be produced, even in a mass production line.
    • 当制造含有较低氧含量的氧化物作为主要成分的一次写入记录介质时,如果通过向成膜气体中引入大量的氧并且溅射靶不含有记录层的成膜, 氧气,每种产生的介质具有不同的性质,因为气体中的氧气流的变化容易发生,并且包含在记录层中的氧的组成比容易变化。 为了解决上述问题,在基板上至少具有记录层并且能够记录和再现信息的信息记录介质包含氧化物AO或AOM(A是包含Te,Sb中至少任一种的材料 ,Ge,Sn,In,Zn,Mo和W中的至少任一种的材料,M是含有金属元素,半金属元素和半导体金属元素中的至少任一种的材料),以及在 生产该层的方法至少含有AO和A和/或M.这样,即使在大规模生产线中也可以生产具有高再现性和稳定性能的记录层。
    • 46. 发明公开
    • Optical information recording medium
    • 光学信息记录介质
    • EP1229530A3
    • 2006-10-18
    • EP02250641.4
    • 2002-01-30
    • Ricoh Company, Ltd.
    • Katoh, MasakiNakamura, YukiYamada, Katsuyuki
    • G11B7/24
    • G11B7/243G11B7/006G11B7/126G11B7/2403G11B7/24067G11B7/2542G11B7/258G11B7/2585G11B2007/24308G11B2007/2431G11B2007/24314G11B2007/24316Y10S430/146
    • A phase change optical recording medium is disclosed including at least a supporting substrate, and recording layer essentially consisting of AgInSbTe alloy compositions feasible of implementing recording and readout steps utilizing the change in reflectivity. The recording medium is characterized by the relation v 0 ≥ 0.7 v WH , where the critical relative velocity of phase change, v 0 , defined by the value of v, at which the differential coefficient, - dR (v) /dv, reaches a maximum, when the recording medium moves against an optical unit during the recording steps at a relative velocity, v, ranging from minimum and maximum relative velocities warranted for the recording medium, V WL and V WH , respectively. In addition, when the reflectivity is measured with varying erase power P E at the linear relative scanning velocity v 0 , the reflectivity of the recording layer as a function of erase power, R(P E ), preferably has a minimum. The recording layer included in the recording medium is devised to have an activation energy of deterioration of equal to, or larger than 1.6 eV, which is obtained by measuring asymmetry, A, and calculating according to the equations, k = dt/ dA, and k = k 0 x exp(E a /k B T). The recording medium is also characterized by activation energy of displacement of the boundary, ranging from 1.0 eV to 2.4 eV, which is obtained from the rate of decrease in the area, S, of the amorphous regions as recorded marks with time according to Arrhenius' equation.
    • 公开了一种相变光学记录介质,其包括至少一个支撑衬底和基本上由AgInSbTe合金组合物组成的记录层,该记录层可利用反射率的变化实现记录和读出步骤。 记录介质的特征在于关系v 0≥0.7vWH,其中相位变化的临界相对速度v 0由v的值定义,其中微分系数-dR(v)/ dv达到最大时的值v 记录介质在记录步骤期间以相对速度V在记录介质VWL和VWH所保证的最小和最大相对速度范围内分别抵靠光学单元移动。 另外,当以线性相对扫描速度v 0改变擦除功率PE测量反射率时,作为擦除功率R(PE)的函数的记录层的反射率优选地具有最小值。 包括在记录介质中的记录层被设计为具有通过测量不对称性A获得的等于或大于1.6eV的劣化激活能,并且根据等式计算k = dt / dA和 k = k0×exp(Ea / kBT)。 记录介质的特征还在于边界位移的激活能,其范围从1.0eV到2.4eV,这是由非晶区的面积减少速率S获得的,作为记录标记随时间的变化根据Arrhenius' 方程。