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    • 44. 发明公开
    • CRYSTAL GROWING METHOD AND CRYSTAL GROWING APPARATUS
    • KRISTALLZÜCHTUNGSVORRICHTUNGUND -VERFAHREN
    • EP1114886A4
    • 2001-12-19
    • EP99937037
    • 1999-08-11
    • SUMITOMO METAL IND
    • SANJOH AKIRA
    • C08J3/00B01D9/02C30B7/00C30B29/58C07H21/00C07K1/14C08H1/00C12N9/00
    • C30B7/00C30B29/58
    • An apparatus for crystal growth includes a solid-state component (42) having a region (42a) whose valence electrons have been controlled so as to control the concentration of holes or electrons of a surface portion in response to the environment of a solution (43) containing a macromolecular compound, a pair of counter electrodes (44a) and (44b) provided to hold therebetween a space above the region (42a), and electric insulating materials (46a) and (46b) supporting the counter electrodes (44a) and (44b). The region (42a) is an impurity region formed on a silicon semiconductor substrate. In the crystal growth method, an electric field is applied to the solution (43) across the counter electrodes (44a) and (44b). Under an electric state generated on the surface of the region (42a), a crystal of the macromolecular compound is formed from the solution (43) to which the electric field is applied.
    • 一种晶体生长设备包括具有区域(42a)的固态器件(42),其中价电子被如此控制,使得表面部分中的空穴或电子的密度根据含有(a)的溶液(43)的环境来控制 高分子化合物,位于区域42a上方空间两侧的一对相对电极44a,44b以及支撑电极44a,44b的电绝缘构件46a,46b。 区域(42a)是形成在硅半导体基板上的杂质区域。 晶体生长方法包括通过相对电极(44a,44b)向溶液(43)施加电场。 高分子化合物的晶体在电场中以区域(42a)的表面的电气状态在溶液(43)中生长。