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41. 发明公开

EP1323846A3 Process for preparing metal coatings from liquid solutions utilizing cold plasma 有权
标题翻译：一种用于通过冷等离子体的装置产生从液体溶液的金属涂层的方法
公开(公告)号：EP1323846A3
公开(公告)日：2004-10-20
申请号：EP02258609.3
申请日：2002-12-13
申请人： AMT Holdings, Inc.
发明人： Conover, Stephen P. , Sharma, Ashok K.
IPC分类号： C23C18/14
CPC分类号： C23C18/08 , C23C18/14
摘要： A method for depositing metals, metal blends and alloys onto substrate surfaces, including microporous substrates utilizing a plasma operation undertaken at room temperature. In the process, a liquid solution of a monomer or comonomer precursor having a metallic component is utilized to wet the surface of the substrate, with the solvent portion thereafter being removed to leave the substrate surface coated with a dry deposit. The coated substrate is then introduced into a plasma reaction chamber with RF energy being applied across spaced electrodes to create a plasma glow along with the introduction of a plasma supporting gas. The substrate is exposed to the plasma glow for conversion of the precursor to dissociated form to create a deposit consisting essentially of the metallic component in elemental form as a cohesive film on the substrate surface. Preferred metals include such noble metals as platinum, gold and silver, as well as other metals. Preferred precursors include platinum hexafluoro-acetylacetonate, (trimethyl) methylcyclopentadienyl platinum, dimethyl (acetylacetonate) gold, and trimethyl phosphine (hexafluoroacetyl acetonate) silver.

42. 发明公开

EP1449582A1 TRANSPARENT THIN FILM AND METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：透明胶片电子显微镜
公开(公告)号：EP1449582A1
公开(公告)日：2004-08-25
申请号：EP01974722.9
申请日：2001-10-05
申请人： Japan Science and Technology Agency
发明人： MINAMI, Tsutomu , TATSUMISAGO, Masahiro , TADANAGA, Kiyoharu , MATSUDA, Atsunori
IPC分类号： B01J35/02 , C01B33/12 , C09K3/00 , C09K3/18
CPC分类号： C23C18/06 , B01D2255/802 , B01J21/08 , B01J31/0231 , B01J31/0274 , B01J31/0275 , B01J35/004 , B01J37/0219 , B01J37/036 , C03C17/256 , C03C2217/42 , C03C2217/71 , C03C2218/113 , C03C2218/32 , C23C18/1212 , C23C18/1216 , C23C18/14 , Y10T428/25
摘要： A method for producing a transparent thin film which comprises forming a gel film containing a composite metal oxide or hydroxide of a titanium compound and a silicon alkoxide from a solution containing a silicon alkoxide and a titanium compound having hydrolizability, and subjecting the gel film to a warm water treatment, to thereby precipitate titania crystallites of anatase-type and/or of a crystal phase having a lattice spacing of about 0.7 nm on the surface of the thin film. The method can be used for producing a novel transparent thin film exhibiting high photocatalyst activity and super hydrophilicity as well as high light transparency, without the need for a high temperature treatment.
摘要翻译：一种透明薄膜的制造方法，其特征在于，包括由含有硅醇盐和具有水解性的钛化合物的溶液形成含有钛化合物和硅醇盐的复合金属氧化物或氢氧化物的凝胶膜，并将所述凝胶膜由此在薄膜的表面上沉淀出具有约0.7nm的晶格间距的锐钛矿型和/或结晶相的二氧化钛微晶。该方法可用于生产具有高光催化活性和超亲水性以及高透光度的新型透明薄膜，而不需要高温处理。

43. 发明公开

EP1113885A4 PRINTING OF ELECTRONIC CIRCUITS AND COMPONENTS 审中-公开
标题翻译： DRUCKEN VON ELEKTRONISCHEN LEITERPLATTEN UND KOMPONENTEN
公开(公告)号：EP1113885A4
公开(公告)日：2004-08-04
申请号：EP98960427
申请日：1998-11-24
申请人： STANFORD RES INST INT
发明人： NARANG SUBHASH , SHARMA SUNITY , COX PHILIP , VENTURA SUSANNA
IPC分类号： H01C17/06 , C23C18/16 , H01F17/00 , H01G4/228 , H01G4/33 , H01L21/288 , H01L51/40 , H01M4/02 , H01M4/04 , H01M4/13 , H01M6/40 , H01M10/04 , H01M10/052 , H01M10/36 , H05K1/16 , H05K3/10 , H05K3/12 , B05D3/00 , B05D5/12 , H01M4/26 , H01M4/32 , H01M4/36 , H01M4/48 , H01M4/58 , H01M4/70 , H01M10/28 , H01M10/38
CPC分类号： H01G4/228 , C23C18/06 , C23C18/1216 , C23C18/14 , H01L21/288 , H01L51/0004 , H01M4/04 , H01M4/0402 , H01M4/0404 , H01M4/0414 , H01M4/0416 , H01M4/049 , H01M4/0492 , H01M4/13 , H01M6/40 , H01M10/0436 , H01M10/052 , H05K1/16 , H05K1/162 , H05K3/105 , H05K3/125 , H05K2203/013 , H05K2203/102 , H05K2203/1157 , H05K2203/1163
摘要： Methods are disclosed for printing (2-7) multilayer electronic components, and circuits on a surface (2), where at least one of the layers is formed by a redox reaction (6) occurring in a deposited solution (4, 5). Electronic components may comprise semiconductors such as in transistors or diode, or metal oxide or electrolyte such as in batteries or fuel cells, or are capacitors, inductors, and resistors. Preferably, the oxidizer of the redox reaction is a strong oxidizer, and the reducer is a strong reducer (3). Reactions are preferably sufficiently exothermic that they can be initiated (6), rather than driven to completion, by microwave or other suitable energy sources, and may yield substantially pure metal or metal oxide layers. The solution being deposited (5) may have either high concentrations of particulates, such as 60-80 wt.% of dry weight, or low concentrations of particulates, such as ≤5 wt.% or ≤2 wt.%. Low particulate content provides printing of structures having lateral resolution of ≤10 νm, ≤5 νm, or ≤1 νm.
摘要翻译：公开了用于在表面（2）上印刷（2-7）多层电子部件和电路的方法，其中至少一个层通过在沉积溶液（4,5）中发生的氧化还原反应（6）形成。电子部件可以包括诸如晶体管或二极管的半导体，或者诸如电池或燃料电池中的金属氧化物或电解质，或者是电容器，电感器和电阻器。优选地，氧化还原反应的氧化剂是强氧化剂，并且还原剂是强还原剂（3）。反应优选充分放热，使得它们可以通过微波或其它合适的能量来引发（6）而不是驱动完成，并且可以产生基本上纯的金属或金属氧化物层。沉积的溶液（5）可以具有高浓度的颗粒，例如60-80wt。干重的％，或低浓度的颗粒，例如<= 5wt。％或<= 2重量％％。低颗粒含量提供了横向分辨率<=10μm，<=5μm或<= 1MUM的结构的印刷。

44. 发明公开

EP1432845A2 METHOD FOR THE DEPOSITION OF MATERIALS FROM MESOMORPHOUS FILMS 审中-公开
标题翻译：工艺物料从介晶膜中的分离
公开(公告)号：EP1432845A2
公开(公告)日：2004-06-30
申请号：EP02740163.7
申请日：2002-06-06
申请人： Simon Fraser University
发明人： VASQUEZ, Juan P., Bravo , HILL, Ross, H.
IPC分类号： C23C18/14
CPC分类号： C23C18/14 , C23C18/06 , C23C18/08 , C23C18/1216 , H05K3/105
摘要： A photoresist-free method for making patterned films of metal oxides, metals, or other metal containing compounds is described. The method involves applying a thin film coating of a metal complex, resulting in the formation of a liquid crystal film. This film can be photolyzed resulting in a chemical reaction which deposits a metal or metal oxide film. The metal complex used is photoreactive and undergoes a chemical reaction in the presence of light of a suitable wavelength. The end product of the reactions depends upon the atmosphere in which the reactions take place. Metal oxide films may be made in air. Patterned films may be made by exposing only selected portions of the film to light. Patterns of two or more materials may be laid down from the same film by exposing different parts of the film to light in different atmospheres.

45. 发明公开

EP1246773A2 FABRICATION OF METALLIC MICROSTRUCTURES VIA EXPOSURE OF PHOTOSENSITIVE COMPOSITION 审中-公开
标题翻译： MAKING非金属微结构暴露感光性组合物
公开(公告)号：EP1246773A2
公开(公告)日：2002-10-09
申请号：EP01901786.2
申请日：2001-01-05
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE
发明人： DENG, Tao , ARIAS, Francisco , ISMAGILOV, Rustem, F. , KENIS, Paul, J., A. , WHITESIDES, George, M.
IPC分类号： B81C1/00 , H05K3/00 , C25D5/54 , H01L21/768
CPC分类号： B81C1/00095 , B81B2207/07 , B81C99/008 , B81C99/0095 , B82Y30/00 , C23C18/06 , C23C18/14 , C23C18/1603 , C23C18/1608 , C23C18/1612 , C23C18/1653 , C23C18/1657 , C23C18/208 , C23C18/36 , C23C18/42 , H05K3/105 , H05K3/106 , H05K3/185 , H05K3/202 , H05K3/205 , H05K2203/0117 , H05K2203/0156 , H05K2203/302 , Y10T29/49986
摘要： A method of forming microstructures. An article (110) including a metal atom precursor (120) is disproportionally exposed to electromagnetic radiation in an amount and intensity sufficient to convert some of the precursor to elemental metal (160). Additional conductive material may then be deposited onto the elemental metal to produce a microstructure.
摘要翻译：形成微结构的方法。一种制品，包括金属原子前体在量和强度足够的一些前体转化成元素金属被不成比例地暴露于电磁辐射英寸额外的导电材料可以然后向所元素金属被沉积，以产生微结构。

46. 发明公开

EP1087433A1 PROCESS FOR THE FORMATION OF SILICON OXIDE FILMS 审中-公开
标题翻译： VERFAHREN ZUM HERSTELLEN VON SILIZIUMOXIDFILMEN
公开(公告)号：EP1087433A1
公开(公告)日：2001-03-28
申请号：EP00912923.0
申请日：2000-03-29
申请人： JSR Corporation
发明人： Matsuki, Yasuo
IPC分类号： H01L21/316 , H01L21/312
CPC分类号： H01L21/02236 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/14 , H01L21/02164 , H01L21/02211 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/316
摘要： There is provided a process for forming a silicon oxide film which is useful as an electrical insulating film, dielectric film or protective film as used in LSI, thin-film transistor, photoelectric converter, photosensitive body and the like. The process comprises forming a coating film from a polysilane compound represented by the formula Si n R m (wherein n is an integer of 3 or more, m is an integer of n to 2n+2, and a plurality of R's are independently a hydrogen atom or an alkyl group) and oxidizing the coating film to form the silicon oxide film.
摘要翻译：提供一种用于形成氧化硅膜的方法，其可用作LSI，薄膜晶体管，光电转换器，感光体等中使用的电绝缘膜，电介质膜或保护膜。该方法包括由式SinRm表示的聚硅烷化合物（其中n为3以上的整数，m为n〜2n + 2的整数，多个R独立地为氢原子或烷基）并氧化涂膜以形成氧化硅膜。

47. 发明授权

EP0716430B1 Thick film conductor compositions with improved adhesion 失效
标题翻译：具有改进的厚膜导体组合物的粘附
公开(公告)号：EP0716430B1
公开(公告)日：2000-02-16
申请号：EP95119035.4
申请日：1995-12-04
申请人： E.I. DU PONT DE NEMOURS AND COMPANY
发明人： Labranche, Marc Henry , Taylor, Barry Edward , Schickling, Bradley J.
IPC分类号： H01C17/06
CPC分类号： H01G4/228 , C03C3/062 , C03C3/072 , C03C3/074 , C03C8/04 , C03C8/10 , C03C8/14 , C03C8/18 , C09D5/24 , C09J9/02 , C23C18/14 , H01C1/142 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/03505 , H01L2224/2919 , H01L2224/29339 , H01L2224/29499 , H01L2224/83192 , H01L2224/8388 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01077 , H01L2924/01082 , H01L2924/0665 , H01L2924/0781 , H01L2924/07811 , H01L2924/14 , H01L2924/15787 , H05K1/092 , H05K3/323 , H05K2201/10674 , H05K2203/107 , H01L2924/00
摘要： A thick film compsn. comprises: (A) 50-90 wt.% of finely divided particles of metallic conductive phase; (B) 1-18 wt.% of an inorganic binder phase with at least one glass, metal oxide, metal oxide precursor, pyrochlore-related cpd., or pyrochlore-related precursor cpd., where the metal is copper, cobalt, lead, bismuth, zinc, nickel, manganese or iron; (C) 0.01-3.0 wt.% adhesion promoter of formula selected from [Ma1+]x[Mb2+]1-xAl2-xSi2-xO8, [Mc3+]x[Mb2+]1-xAl2+xSi2-xO8 and [Md]2[Me][Mf]2Op (where, Ma=K or Na; Mb = Ca; Mc = Bi, Fe, Mn, Cr, V, Sc, In, Y, Gd, Eu, Sm, Nd, Pr, Ce, La or Sb; Md = Ca or Na; Me = Mg or Al; Mf = Si or Al; and x = 0-1); and (D) an organic medium as the balance. All of (A), (B) and (C) are dispersed in (D).

48. 发明公开

EP0948807A1 INTEGRATED CIRCUIT ELECTRODE STRUCTURE AND PROCESS FOR FABRICATING SAME 失效
标题翻译：电极结构用于集成电路的制作工艺
公开(公告)号：EP0948807A1
公开(公告)日：1999-10-13
申请号：EP97952589.0
申请日：1997-12-19
申请人： SYMETRIX CORPORATION
发明人： CUCHIARO, Joseph, D. , MCMILLAN, Larry, D. , PAZ DE ARAUJO, Carlos, A.
IPC分类号： H01L23 , C23C16 , C23C18 , H01L21 , H01L27
CPC分类号： H01L27/11502 , C23C16/4412 , C23C16/448 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1245 , C23C18/1295 , C23C18/14 , H01L21/31691 , H01L28/55 , H01L28/56 , H01L28/60 , H01L28/65
摘要： An electrode (79, 329) for a ferroelectric electronic device (80, 317C) is formed on an SiO2 isolation layer (77, 324) by depositing an adhesion layer (98, 326), such as titanium, between about 25 Å and 500 Å thick, then a layer (81, 328) of a nobel metal, such as platinum, that is at least 10 times thicker than the adhesion layer. The electrode is then annealed at a temperature higher than the minimum oxide eutectic temperature of the adhesion layer. The electrode is moved into the annealing furnace at a ramp rate such that it reaches its anneal temperature in five minutes or less. The relative thinness of the adhesion layer and the quick ramp up of the anneal causes all the titanium to be tied up in the oxide before it can diffuse through the platinum, and prevents the formation of rutile phases of the titanium and defects such as voids and hillocks in the platinum, which can destabilize the electrode.

49. 发明公开

EP0891631A1 METHOD AND APPARATUS FOR FABRICATING SILICON DIOXIDE AND SILICON GLASS LAYERS IN INTEGRATED CIRCUITS 失效
标题翻译：方法和设备用于制造硅和硅玻璃层在集成电路
公开(公告)号：EP0891631A1
公开(公告)日：1999-01-20
申请号：EP97916016.0
申请日：1997-03-14
申请人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION
发明人： MCMILLAN, Larry, D. , SCOTT, Michael, C. , PAZ DE ARAUJO, Carlos, A. , OTSUKI, Tatsuo , HAYASHI, Shinichiro
IPC分类号： B05D1 , B05D3 , B05D7 , C23C16 , C23C18 , C23C26 , C30B7 , H01L21 , H01L27 , H01L41 , H05K3
CPC分类号： H01L21/316 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1212 , C23C18/1287 , C23C18/14 , C23C26/02 , C30B7/00 , C30B29/68 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L41/316 , H05K3/105
摘要： A precursor liquid comprising silicon in a xylenes solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of silicon dioxide or silicon glass on the substrate. Then an integrated circuit is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator for an electronic device in the integrated circuit.

50. 发明公开

EP0885315A1 MISTED PRECURSOR DEPOSITION APPARATUS AND METHOD WITH IMPROVED MIST AND MIST FLOW 失效
标题翻译：厂房及VEFAHREN涂料用改进的雾和FOG领导FOG形前体的方式
公开(公告)号：EP0885315A1
公开(公告)日：1998-12-23
申请号：EP97914860.0
申请日：1997-03-04
申请人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION
发明人： HAYASHI, Shinichiro , MCMILLAN, Larry, D. , AZUMA, Masamichi , PAZ DE ARAUJO, Carlos, A.
IPC分类号： B05D1 , B05D3 , B05D7 , C23C8 , C23C16 , C23C18 , C23C26 , C30B7 , H01L21 , H01L27 , H01L39 , H01L41 , H05K3
CPC分类号： H01L21/02197 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C8/10 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/12 , C23C18/1216 , C23C18/1287 , C23C18/14 , C23C26/02 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L41/1871 , H01L41/314 , H05K3/105
摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A barrier plate is disposed in spaced relation above the substrate and substantially parallel thereto, the area of said barrier plate in a plane parallel to said substrate being substantially equal to said area of said substrate in said substrate plane, i.e. within 10% of said substrate area. The barrier plate has a smoothness tolerance of 5% of the average distance between said barrier plate and said substrate. A mist is generated, allowed to settle in a buffer chamber, filtered through a 1 micron filter, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.

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