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    • 49. 发明公开
    • MASK BLANK FOR REFLECTION-TYPE EXPOSURE, AND MASK FOR REFLECTION-TYPE EXPOSURE
    • MASKENROHLINGFÜRREFLEXIONSBELICHTUNG UND MASKEFÜRREFLEXIONSBELICHTUNG
    • EP2763157A1
    • 2014-08-06
    • EP12835040.2
    • 2012-09-24
    • Toppan Printing Co., Ltd.
    • KODERA, YutakaSAKATA, YoKON, Masato
    • H01L21/027G03F1/24G03F1/54G03F1/60G03F7/20
    • G03F1/24G03F1/38G03F1/40G03F1/60
    • A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO 2 , TiO 2 , and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.
    • 提供反射曝光掩模空白和反射曝光掩模,并且掩模能够准确地曝光和转录,而不会使光从电路图案区域以外的区域反射。 反射掩模板在基板(11)上具有多层反射膜(12),保护膜(13),吸收膜(14)和反面导电膜(15)。 由氧化铟锡形成反面导电膜。 所述基板包含SiO 2,TiO 2和至少一种锰(Mn),铜(Cu),钴(Co),铬(Cr),铁(Fe),银(Ag),镍(Ni) 硫(S),硒(Se),金(Au)和钕(Nd)。 通过选择性地剥离反射掩模坯料上的吸收膜,通过形成电路图案来制造反射掩模,并通过剥离电路图案周围的多层反射膜,保护膜和吸收膜来形成遮光框。