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41. 发明公开

EP3196698A1 HALFTONE PHASE SHIFT PHOTOMASK BLANK AND MAKING METHOD 有权
标题翻译：半色调相移照相空白及制作方法
公开(公告)号：EP3196698A1
公开(公告)日：2017-07-26
申请号：EP17150778.3
申请日：2017-01-10
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： KOSAKA, Takuro , INAZUKI, Yukio , KANEKO, Hideo
IPC分类号： G03F1/32 , G03F1/68
CPC分类号： G03F1/32 , G03F1/68
摘要： A halftone phase shift film is formed on a transparent substrate by reactive sputtering using a silicon target, an inert gas, and a nitrogen-containing reactive gas. A hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In a transition mode sputtering step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise.
摘要翻译：通过使用硅靶，惰性气体和含氮反应气体的反应性溅射在透明基板上形成半色调相移膜。通过扫描反应气体的流速绘制滞后曲线，并绘制扫描期间的溅射电压或电流与反应气体的流速的关系曲线。在对应于从大于提供滞后的反应气体流量的下限的范围到小于上限的范围的区域中的溅射的过渡模式溅射步骤中，目标功率，惰性气体流量和/或反应性气体流量连续或逐步增加或减少。

42. 发明公开

EP3079012A3 HALFTONE PHASE SHIFT MASK BLANK AND HALFTONE PHASE SHIFT MASK 有权
标题翻译：空白半色调相移掩膜和半色调相移掩膜
公开(公告)号：EP3079012A3
公开(公告)日：2016-12-14
申请号：EP16161049.8
申请日：2016-03-18
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： SASAMOTO, Kouhei , KOSAKA, Takuro , INAZUKI, Yukio , KANEKO, Hideo
IPC分类号： G03F1/26
CPC分类号： G03F1/32
摘要： A halftone phase shift mask blank is provided comprising a transparent substrate and a halftone phase shift film which is composed of a silicon base material having a Si+N+O content of at least 90 at%, a Si content of 30-70 at%, a N+O content of 30-60 at%, and an O content of up to 30 at%, and has a thickness of up to 70 nm. The halftone phase shift film is thin enough for mask pattern processing, undergoes minimal pattern size variation degradation upon exposure to sub-200 nm radiation, and maintains a necessary phase shift and transmittance.

43. 发明公开

EP3086174A1 METHOD FOR PREPARING HALFTONE PHASE SHIFT PHOTOMASK BLANK 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG VON HALBTONPHASENVERSCHIEBER-FOTOMASKENROHLINGEN
公开(公告)号：EP3086174A1
公开(公告)日：2016-10-26
申请号：EP16160126.5
申请日：2016-03-14
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： KOSAKA, Takuro , INAZUKI, Yukio
IPC分类号： G03F1/28 , G03F1/32
CPC分类号： G03F1/32 , G03F1/28 , G03F1/68
摘要： A halftone phase shift film containing Si and N and/or O is deposited on a transparent substrate by reactive sputtering of a Si-containing target with a reactive gas containing N and/or O. One layer is sputter deposited while the reactive gas flow rate is set equal to or lower than the lower limit of the reactive gas flow rate in the hysteresis region, and another layer is sputter deposited while the reactive gas flow rate is set inside the lower and upper limits of the reactive gas flow rate in the hysteresis region. The phase shift film exhibits satisfactory in-plane uniformity of optical properties.
摘要翻译：含有Si和N和/或O的半色调相移膜通过含有Si的靶与含有N和/或O的反应性气体的反应溅射沉积在透明衬底上。一层溅射沉积，而反应气体流速被设定为等于或低于滞后区域中的反应气体流量的下限，并且另外的层被溅射沉积，同时反应气体流量设定在迟滞中的反应气体流量的下限和上限内地区。相移膜表现出令人满意的光学性能的面内均匀性。

44. 发明公开

EP3051347A2 LIGHT PATTERN EXPOSURE METHOD 有权转让
标题翻译：轻型曝光方法
公开(公告)号：EP3051347A2
公开(公告)日：2016-08-03
申请号：EP16159423.9
申请日：2012-11-16
申请人： Shin-Etsu Chemical Co., Ltd. , Toppan Printing Co., Ltd.
发明人： YOSHIKAWA, Hiroki , INAZUKI, Yukio , KANEKO, Hideo , KOITABASHI, Ryuji , KOJIMA, Yosuke , HARAGUCHI, Takashi , HIROSE, Tomohito
IPC分类号： G03F1/00 , G03F1/32 , G03F1/60 , G03F1/26
CPC分类号： G03F1/32 , G03F1/26
摘要： A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom%, and an oxygen content of 5-20 atom%. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm 2 .
摘要翻译：光图案曝光方法是通过半色调相移掩模向抗蚀剂膜照射ArF准分子激光。该掩模包括透明基板和包含过渡金属，硅，氮和氧且原子比（Met / Si）为0.18-0.25，氮含量为25-50原子的材料的半色调相移膜图案％，氧含量为5-20原子％。掩模可以用ArF准分子激光以至少10kJ / cm 2的累积剂量照射。

45. 发明公开

EP2998794A3 PHOTOMASK BLANK 审中-公开
标题翻译： PHOTOMASK空白
公开(公告)号：EP2998794A3
公开(公告)日：2016-07-13
申请号：EP15183315.9
申请日：2015-09-01
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： FUKAYA, Souichi , INAZUKI, Yukio
IPC分类号： G03F1/00 , G03F1/50
CPC分类号： G03F1/50
摘要： A photomask blank includes a chromium-based material film as a light-shielding film, wherein the chromium-based material film has an optical density per unit thickness at a wavelength of 193 nm of at least 0.050/nm, and the chromium-based material film has a tensile stress or compressive stress corresponding to an amount of warp of up to 50 nm.
The present invention provides a photomask blank having a thin film of chromium-based material which is lowered in film stress while retaining a high optical density per unit film thickness. This enables high-accuracy patterning of a chromium-based material film.
摘要翻译：光掩模坯包括作为遮光膜的铬基材料膜，其中铬基材料膜在193nm的波长处的每单位厚度的光密度为至少0.050 / nm，并且铬基材料膜具有对应于高达50nm的翘曲量的拉伸应力或压缩应力。本发明提供了一种具有铬膜基材料薄膜的光掩模坯料，该薄膜的膜应力降低，同时保持每单位膜厚度的高光学密度。这使得能够高精度地构图铬基材料膜。

46. 发明公开

EP2980645A3 DESIGNING OF PHOTOMASK BLANK AND PHOTOMASK BLANK 有权
标题翻译：设计光掩模坯料和口罩空白照片
公开(公告)号：EP2980645A3
公开(公告)日：2016-07-13
申请号：EP15176765.4
申请日：2015-07-15
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： SASAMOTO, Kouhei , KANEKO, Hideo , INAZUKI, Yukio , FUKAYA, Souichi
IPC分类号： G03F1/00 , G03F1/50
CPC分类号： G03F1/50 , G03F1/38 , G03F1/84
摘要： A method for designing a photomask blank comprising a transparent substrate and an optical film thereon is provided. The photomask blank is processed into a transmissive photomask having a pattern of optical film such that the film pattern may be transferred when exposure light is transmitted by the photomask. The optical film is selected using a specific reflectance, which is equal to the reflectance divided by the film thickness, as an index.

47. 发明公开

EP2975459A3 BINARY PHOTOMASK BLANK, PREPARATION THEREOF, AND PREPARATION OF BINARY PHOTOMASK 有权
标题翻译：二元光子空白，其制备和二元光子的制备
公开(公告)号：EP2975459A3
公开(公告)日：2016-06-29
申请号：EP15175384.5
申请日：2015-07-06
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： INAZUKI, Yukio , KOSAKA, Takuro , NISHIKAWA, Kazuhiro
IPC分类号： G03F1/00 , G03F1/32 , G03F1/50 , G03F1/26 , G03F1/60 , G03F1/54 , G03F1/58
摘要： A binary photomask blank has a light-shielding film on a transparent substrate, the light-shielding film composed mainly of transition metal M and Si, or M, Si and N, and having an optical density of at least 3.0. The light-shielding film includes a layer containing M, Si and N so as to meet the formula: B ≤ 0.68×A + 0.23 wherein A is an atomic ratio M/Si and B is an atomic ratio N/Si, and has a thickness of up to 47 nm. The binary photomask blank has a thin light-shielding film capable of fully shielding exposure light.
摘要翻译：二元光掩模坯在透明基板上具有遮光膜，该遮光膜主要由过渡金属M和Si或者M，Si和N构成，并且具有至少3.0的光密度。遮光膜包括含有M，Si和N的层，以满足公式：B≤0.68×A + 0.23其中A是原子比M / Si和B是原子比N / Si，并且具有厚度可达47纳米。二元光掩模坯具有能够完全遮挡曝光光的薄的遮光膜。

48. 发明公开

EP2983044A3 HALFTONE PHASE SHIFT PHOTOMASK BLANK AND MAKING METHOD 有权
标题翻译：半色调相移照相空白及制作方法
公开(公告)号：EP2983044A3
公开(公告)日：2016-06-22
申请号：EP15179457.5
申请日：2015-08-03
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： KOSAKA, Takuro , INAZUKI, Yukio , KANEKO, Hideo , SAKURADA, Toyohisa
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/60
CPC分类号： G03F1/32 , G03F1/26 , G03F1/60
摘要： A halftone phase shift photomask blank comprising a transparent substrate and a halftone phase shift film consisting of silicon, nitrogen and optional oxygen, and providing a phase shift of 150°-200° relative to light of wavelength up to 200 nm. The phase shift film includes at least one layer meeting the formula: 2×O/Si + 3×N/Si ≥ 3.5 wherein Si is a silicon content (at%), N is a nitrogen content (at%), and 0 is an oxygen content (at%). The phase shift film exhibits satisfactory in-plane uniformity of transmittance.
摘要翻译：半色调相移光掩模坯包括透明衬底和由硅，氮和任选的氧组成的半色调相移膜，并且相对于波长高达200nm的光提供150°-200°的相移。相移膜包括满足以下公式的至少一个层：2×O / Si + 3×N /Si≥3.5其中Si是硅含量（原子％），N是氮含量（原子％），并且0是氧含量（at％）。相移膜表现出令人满意的透射率的面内均匀性。

49. 发明公开

EP2998794A2 PHOTOMASK BLANK 审中-公开
标题翻译： FOTOMASKENROHLING
公开(公告)号：EP2998794A2
公开(公告)日：2016-03-23
申请号：EP15183315.9
申请日：2015-09-01
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： FUKAYA, Souichi , INAZUKI, Yukio
IPC分类号： G03F1/50 , G03F1/00
CPC分类号： G03F1/50
摘要： A photomask blank includes a chromium-based material film as a light-shielding film, wherein the chromium-based material film has an optical density per unit thickness at a wavelength of 193 nm of at least 0.050/nm, and the chromium-based material film has a tensile stress or compressive stress corresponding to an amount of warp of up to 50 nm.
The present invention provides a photomask blank having a thin film of chromium-based material which is lowered in film stress while retaining a high optical density per unit film thickness. This enables high-accuracy patterning of a chromium-based material film.
摘要翻译：光掩模坯料包括铬基材料膜作为遮光膜，其中铬基材料膜在波长193nm处的每单位厚度的光密度至少为0.050 / nm，铬基材料膜具有对应于高达50nm的翘曲量的拉伸应力或压缩应力。本发明提供了一种具有铬基材料薄膜的光掩模坯料，其薄膜应力降低，同时保持每单位膜厚度的高光密度。这使得能够对铬基材料膜进行高精度图案化。

50. 发明公开

EP2980645A2 DESIGNING OF PHOTOMASK BLANK AND PHOTOMASK BLANK 有权
标题翻译： GOTTERUNG VON FOTOMASKENROHLING UND FOTOMASKENROHLING
公开(公告)号：EP2980645A2
公开(公告)日：2016-02-03
申请号：EP15176765.4
申请日：2015-07-15
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： SASAMOTO, Kouhei , KANEKO, Hideo , INAZUKI, Yukio , FUKAYA, Souichi
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , G03F1/38 , G03F1/84
摘要： A method for designing a photomask blank comprising a transparent substrate and an optical film thereon is provided. The photomask blank is processed into a transmissive photomask having a pattern of optical film such that the film pattern may be transferred when exposure light is transmitted by the photomask. The optical film is selected using a specific reflectance, which is equal to the reflectance divided by the film thickness, as an index.
摘要翻译：提供了一种用于设计包括透明基板和其上的光学膜的光掩模坯料的方法。将光掩模坯料加工成具有光学膜图案的透射光掩模，使得当曝光光被光掩模传输时，膜图案可能被转印。使用与反射率除以膜厚度相等的特定反射率作为指标来选择光学膜。

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