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    • 37. 发明公开
    • Thin film vertical magnetic recording medium with a substrate, an intermediate layer and a magnetisable layer
    • 用于垂直磁记录基底,中间层和磁化层的薄膜的支持。
    • EP0220597A2
    • 1987-05-06
    • EP86114203.2
    • 1986-10-14
    • International Business Machines Corporation
    • Howard, James Kent
    • G11B5/64G11B5/66
    • G11B5/7325G11B5/64Y10S428/928Y10T428/12465Y10T428/12812Y10T428/12854Y10T428/12931
    • The present invention relates to a magnetic recording medium for vertical recording of the type comprising a substrate (1), an intermediate layer (2) formed on the substrate and a magnetisable layer (3) formed on the intermediate layer.
      A medium according to the invention is characterised in that
      the intermediate layer (2) comprises a first constituent of an element selected from the group consisting of tungsten (W), molybdenum (Mo), niobium (Nb), titanium (Ti), vanadium (V), iridium (Ir) and zirconium (Zr), and a second constituent consisting of either cobalt (Co), chromium (Cr), or a solid substitutional solution alloy of CoCr, wherein the amounts of the first and second constituents are present in a fixed stoichometric ratio so as to form an intermetallic compound with a hexagonal crystalline structure, and
      the magnetisable layer (3) comprises a ternary alloy of the form (Co 100-y Cr y )X, wherein y is approximately in the range of 14 to 22 and wherein X is selected from the group consisting of W, Mo, Nb, Ti and V, and has an hexagonal crystalline structure with its C-axis oriented generally perpendicular to said substrate (1).
      The hexagonal cell constants of the intermediate layer (2) and the magnetisable layer (3) are related by approximately integral multiples whereby the hexagonal crystalline orientation of the magnetisable layer (3) is enhanced.
    • 本发明涉及一种用于所述类型包括基底(1)至中间层的垂直记录用的磁性记录介质(2)形成在所述衬底和一个可磁化层(3)形成在中间层上。 ... 的介质雅丁发明是DASS ...中间层(2)包括选自钨(W),钼(Mo),铌中选择的元件的第一成分(Nb)的 钛(Ti),钒(V),铱(Ir)和锆(Zr)和第二组成由...组成要么钴(Co),铬(Cr)或钴铬的固体置换溶液合金,worin的量 所述第一组分和第二组分存在于一个固定的化学计量比,从而形成在与六方晶体结构金属间化合物,和...可磁化层(3)包括以下形式的三元合金(Co 100-yCry)X,worin y是 大约在14至22和worin X的范围是选自钨,钼,铌,钛和V中选择的,并且具有其C轴取向的基因反弹六方晶体结构垂直于所述衬底(1)。 ... 中间层(2)和所述可磁化层(3)通过将大约整数倍,由此可磁化层(3)的六方晶取向增强相关的六边形单元的常数。