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    • 34. 发明公开
    • BOOTSTRAP DIODE EMULATOR WITH DYNAMIC BACK-GATE BIASING
    • 具有动态后门偏置的自举二极管仿真器
    • EP1685514A2
    • 2006-08-02
    • EP04800980.7
    • 2004-11-10
    • INTERNATIONAL RECTIFIER CORPORATION
    • WILHELM, Dana
    • G06F19/00G05F1/40
    • H03K17/6871H03F2200/31H03K17/063H03K2217/0018
    • A bootstrap diode emulator circuit (302) for use in a half-bridge switching circuit (300) employing transistors (105a, 105b) connected to one another in a totem pole configuration, a driver circuit for driving the transistors, and a bootstrap diode emulator circuit (302) includes an LDMOS transistor having a gate, a back-gate, a source and a drain, the drain of the LDMOS transistor being coupled to the low-side supply node; a gate control circuit electrically coupled to the gate of the LDMOS transistor, and a dynamic back-gate biasing circuit electrically coupled to the back-gate of the LDMOS transistor. The dynamic back-gate biasing circuit is operable to dynamically bias the back-gate of the LDMOS of the LDMOS transistor when the LDMOS is turned on by applying a voltage to the back-gate of the LDMOS transistor that is close to but slightly lower than a voltage of the drain of the LDMOS transistor.
    • 一种自举二极管仿真器电路(302),用于采用图腾柱配置相互连接的晶体管(105a,105b)的半桥开关电路(300),用于驱动晶体管的驱动器电路以及自举二极管仿真器 电路(302)包括具有栅极,背栅极,源极和漏极的LDMOS晶体管,所述LDMOS晶体管的漏极耦合到所述低侧电源节点; 电耦合到LDMOS晶体管的栅极的栅极控制电路以及电耦合到LDMOS晶体管的背栅极的动态背栅偏置电路。 当LDMOS通过向LDMOS晶体管的背栅极施加电压而导通时,动态背栅极偏置电路可操作以动态偏置LDMOS晶体管的LDMOS的背栅极,该LDMOS晶体管的背栅极接近但略低于 LDMOS晶体管的漏极电压。