会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明公开
    • A SATURABLE ABSORBER STRUCTURE
    • 可饱和吸收体结构
    • EP1872450A1
    • 2008-01-02
    • EP05733127.4
    • 2005-04-21
    • Corelase OY
    • SALOKATVE, Arto
    • H01S3/098H01S3/113G02F1/35
    • H01S3/1118G02F1/3523G02F2201/346H01S3/067H01S3/08059H01S3/113
    • The invention relates to a saturable absorber structure (10) with multiple-layer epitaxial heterostructure absorbers. Typically the structure comprises first absorber layers of a quantum well semiconductor QW-material, which has a nonlinearly on radiation intensity dependent optical absorption; first contacting layers of a first optically transparent semiconductor material against a surface or surfaces of said first absorber layers; and a first Bragg-reflector (23). The first contacting layers have lattice fit or pseudomorphism with said first absorber layers. The absorber layer (13, 13a, 13b) of the QW-material has a thickness (S) of at maximum 60 nm. Further, said first optically transparent semiconductor material of the contacting layer (14, 14a, 14b, 14c) is a reactive R-material, which semiconductor material contains two or more main components, at least one dopant (M2), and at least one metallic alloying element (M1) substituting one of said main components and enhancing the incorporation of said dopant(s). The metallic alloying element has a concentration of at least 50 atomic-% of that main component it substitutes. This way the charge carriers originating in said QW-material of the first absorber layer has a first recombination time at maximum 100 picoseconds determined by recombination of the charge carriers at sites of said dopant(s), thus forming a fast saturable absorber.
    • 24. 发明公开
    • VARIABLE PATH LENGTH PASSIVE Q SWITCH
    • 具有可变距离被动质量SWITCH
    • EP1250736A2
    • 2002-10-23
    • EP01928557.6
    • 2001-04-16
    • Raytheon Company
    • FUKUMOTO, Joseph, M.
    • H01S3/113
    • G02F1/39G02F1/3551G02F1/3553G02F2201/16G02F2201/17G02F2201/18G02F2201/34G02F2203/05G02F2203/58H01S3/0809H01S3/1061H01S3/113
    • A passive Q switch. The inventive Q switch (230) includes a first wedge (232) of material adapted to absorb electromagnetic energy. The first wedge (232) has a first thickness on a first end thereof and a second thickness on a second end thereof diametrically opposite the first end. The first wedge (232) has a first surface connecting the first and second ends and a second surface (236) connecting the first and second ends. The second surface (236) is slanted relative to the first surface. A second wedge of material (234) is included in the inventive passive Q switch (230). As per the first wedge (232), the second wedge (234) has a first thickness on a first end thereof and a second thickness on a second end thereof diametrically opposite the first end. The second wedge has a first surface connecting the first and second ends and a second surface (238) connecting the first and second ends. The second surface (238) is slanted relative to the first surface. The second surface (236) of the first wedge (232) is mounted in optical alignment with the second surface (238) of the second wedge (234) and in a plane parallel thereto. In the illustrative embodiment, the wedges (232, 234) are made of chromium:yttrium aluminum garnet (Cr+2:YAG) and mounted to allow the first and second wedges to translate relative to each other while maintaining a constant distant 'd' between the second surfaces thereof. The inventive Q switch allows for a variable thickness and lasing hold-off in a passive arrangement.