会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明公开
    • METHOD OF SEPARATING SURFACE LAYER OF SEMICONDUCTOR CRYSTAL USING A LASER BEAM PERPENDICULAR TO THE SEPARATING PLANE
    • 工艺为半导体晶体的表面层,分离层垂直光束分离
    • EP2646194A2
    • 2013-10-09
    • EP11844036.1
    • 2011-11-29
    • Shreter, Yuri GeorgievichRebane, Yuri ToomasovichMironov, Aleksey Vladimirovich
    • Shreter, Yuri GeorgievichRebane, Yuri ToomasovichMironov, Aleksey Vladimirovich
    • B23K26/00B23K26/40B23K26/36B28D1/22B28D5/00C03B33/00H01L21/02B23K26/06
    • B23K26/0063B23K26/0006B23K26/0057B23K26/0622B23K26/364B23K26/38B23K26/40B23K2201/40B23K2203/50B23K2203/56B28D5/0011C30B29/406C30B33/06H01L33/0079
    • This invention provides two variations of methods of separating a surface layer (307) of the semi-conductor crystal (101). In the first variation of the method, a focused laser beam (102) is directed onto the crystal (101) in such a way that focus is placed in the layer separation plane (304) perpendicular to the axis (103) of said beam (102), the laser beam (102) is moved with scanning the layer separation plane (304) with focus in the direction from the open side surface of the crystal (101) deep into the crystal with forming a continuous slit width of which is increased with every pass of the laser beam (102), the previous operation is performed up to separation of the surface layer (307). In the second variation of the method, pulse laser emission is generated; a focused laser beam is directed onto the crystal in such a way that focus is placed in the layer separation plane perpendicular the axis of said beam, a laser beam is moved in such a way that focus is moved in the layer separation plane with forming the non-overlapping local regions with a disturbed topology of the crystal structure and with reduced interatomic bonds, wherein said local regions is distributed over the whole said plane, an external action disturbing said reduced interatomic bonds is applied to the separable layer.
    • 本发明提供的分离的半导体晶体(101)的表面层(307)的方法的两个变体。 在该方法的第一变型中,聚焦的激光束(102)在寻求一种方式做聚焦在层分离面(304)放置成垂直于所述光束的轴线(103)(被引导到晶体(101) 102),所述激光束(102)被移动,从晶体(101的开口侧表面的方向上与焦点扫描层分离面(304))深入到晶体与形成所有这些连续的狭缝宽度增加 用激光束(102)的每一个通,先前的外科手术被执行直到在表面层(307)的分离。 在该方法的第二变型中,产生脉冲激光发射; 聚焦的激光束被引导到在晶体中寻求的方式做了聚焦在层分离平面垂直所述光束的轴线放置,一个激光束在寻求一种方式做聚焦在层分离移动planesin形成移动 非重叠的局部区域与具有降低的原子间键合的晶体结构的和紊乱的拓扑结构,所述worin局部区域被分布在整个说计划外部作用干扰所述降低的原子间键合被施加到可分离层。