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21. 发明公开

EP2421003A2 Antifuse circuit 有权转让
标题翻译：防盗电路
公开(公告)号：EP2421003A2
公开(公告)日：2012-02-22
申请号：EP11184184.7
申请日：2006-06-13
申请人： Freescale Semiconductor, Inc. Are
发明人： Andre, Thomas W , Subramanian, Chitra K.
IPC分类号： G11C17/18
CPC分类号： G11C17/18 , G11C11/1673 , G11C11/1695 , G11C11/5692 , G11C17/02
摘要： An antifuse circuit (10) provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse (18) has been previously programmed to a low resistance state in response to a program voltage. A sense amplifier (12) provides the resistance state signal. A plurality of reference magnetic tunnel junctions (16) are coupled in parallel and to the sense amplifier (12), each (50, 52, 54) having a resistance within a range to provide a collective resistance that can be determined by the sense amplifier (12) to differ from each resistance state of the MTJ antifuse (18). A write circuit selectively provides a current sufficient to create the program voltage when the write circuit (20) is enabled to program the antifuse magnetic tunnel junction (18). Upon detecting a change in resistance in the MTJ antifuse (18), the write circuit (20) reduces current supplied to the antifuse (18). Multiple antifuses may be programmed concurrently. Gate oxide thicknesses of transistors are adjusted for optimal performance.
摘要翻译：反熔丝电路（10）以比特为单位提供指示MTJ（磁隧道结）反熔丝（18）是否已经响应于编程电压而预先编程到低电阻状态的信号。读出放大器（12）提供电阻状态信号。多个参考磁隧道结（16）并联耦合到读出放大器（12），每个（50,52,54）具有在一定范围内的电阻以提供可由读出放大器（12）与MTJ反熔丝（18）的每个电阻状态不同。当写电路（20）被启用以编程反熔断磁隧道结（18）时，写电路选择性地提供足以产生编程电压的电流。当检测到MTJ反熔丝（18）中的电阻变化时，写入电路（20）减少供应到反熔丝（18）的电流。多个反熔丝可以同时编程。调节晶体管的栅极氧化层厚度以获得最佳性能。

22. 发明公开

EP1141737A2 MAGNETIC SYSTEMS WITH IRREVERSIBLE CHARACTERISTICS AND A METHOD OF MANUFACTURING AND REPAIRING AND OPERATING SUCH SYSTEMS 有权
标题翻译：随着对生产，维修，这种系统的使用不可逆特征及方法磁测量系统
公开(公告)号：EP1141737A2
公开(公告)日：2001-10-10
申请号：EP00942094.4
申请日：2000-06-16
申请人： Koninklijke Philips Electronics N.V.
发明人： LENSSEN, Kars-Michiel, H. , ADELERHOF, Derk, J. , SOMERS, Gerardus, H., J. , VAN ZON, Joannes, B., A., D. , KUIPER, Antonius, E., T.
IPC分类号： G01R33/09
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/096 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C17/02 , H01L27/22 , H01L27/222
摘要： A novel magnetic data storage system and a sensing system of magnetic characteristics are disclosed; the systems have a magnetization direction that is irreversible in an external magnetic field. A method of manufacturing, a method of resetting or changing or repairing and a method of operating such systems are also disclosed. The systems can include a set of magnetic devices in a balancing configuration; essentially each of said devices comprises a structure of layers including at least a first ferromagnetic layer and a second ferromagnetic layer with at least a separation layer of a non-magnetic material therebetween, said structure having at least a magneto resistance effect. The magnetization direction of the first ferromagnetic layer of at least one of said devices is irreversible in an external magnetic field higher than about 35 kA/m .

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