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1. 发明授权

EP1141737B1 MAGNETIC SYSTEMS WITH IRREVERSIBLE CHARACTERISTICS AND A METHOD OF MANUFACTURING AND REPAIRING AND OPERATING SUCH SYSTEMS 有权
标题翻译：随着对生产，维修，这种系统的使用不可逆特征及方法磁测量系统
公开(公告)号：EP1141737B1
公开(公告)日：2008-01-16
申请号：EP00942094.4
申请日：2000-06-16
申请人： Koninklijke Philips Electronics N.V.
发明人： LENSSEN, Kars-Michiel, H. , ADELERHOF, Derk, J. , SOMERS, Gerardus, H., J. , VAN ZON, Joannes, B., A., D. , KUIPER, Antonius, E., T.
IPC分类号： G01R33/09
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/096 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C17/02 , H01L27/22 , H01L27/222
摘要： A novel magnetic data storage system and a sensing system of magnetic characteristics are disclosed; the systems have a magnetization direction that is irreversible in an external magnetic field. A method of manufacturing, a method of resetting or changing or repairing and a method of operating such systems are also disclosed. The systems can include a set of magnetic devices in a balancing configuration; essentially each of said devices comprises a structure of layers including at least a first ferromagnetic layer and a second ferromagnetic layer with at least a separation layer of a non-magnetic material therebetween, said structure having at least a magneto resistance effect. The magnetization direction of the first ferromagnetic layer of at least one of said devices is irreversible in an external magnetic field higher than about 35 kA/m .

2. 发明授权

EP1116248B1 METHOD OF MANUFACTURING A MAGNETIC TUNNEL JUNCTION DEVICE 有权
标题翻译：方法用于生产具有磁性隧道接触的设备
公开(公告)号：EP1116248B1
公开(公告)日：2005-04-20
申请号：EP00949364.4
申请日：2000-07-17
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN ZON, Joannes, B., A., D.
IPC分类号： H01F41/32 , G11B5/31
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/308 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49156
摘要： A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two electrode layers (3, 7) and a barrier layer (5) extending in between is formed. One of the electrode layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is subsequently removed by means of physical etching, in which at least substantially charged particles have a motion energy which is between the sputtering threshold of the magnetic material of the rest layer and the sputtering threshold of the non-magnetic material of the barrier layer. In the relevant method, it is prevented that the electrode layer which is not to be structured is detrimentally influenced during structuring of the other electrode layer.

3. 发明公开

EP1399748A2 SEMIMANUFACTURE FOR A SENSOR FOR MEASURING A MAGNETIC FIELD 有权
标题翻译：半成品FOR传感器，用于测量磁场
公开(公告)号：EP1399748A2
公开(公告)日：2004-03-24
申请号：EP02733067.9
申请日：2002-05-29
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN ZON, Joannes, B., A., D. , RUIGROK, Jacobus, J., M. , GIEBELER, Carsten
IPC分类号： G01R33/09
CPC分类号： G01R33/09
摘要： The semi-finished article for obtaining a sensor for measuring a magnetic field comprises a substrate (1) and a first magnetic element (2), a second magnetic element (3), a third magnetic element (4), and a fourth magnetic element (5) in a bridge configuration. Each of the magnetic elements contains a first magnetic layer (10) having an axis of magnetization (11), the axes of magnetization (11) of the first magnetic layers of the elements (2, 3) in the first bridge portion (8) as well as the axes of magnetization of the elements (4, 5) in the second bridge portion (9) being oriented so as to extend in opposite directions. Close to each of the contacts (6, 7), the axis of magnetization (11) of the element of the first bridge portion (8) is oppositely oriented with respect to the element of the second bridge portion (9). Magnetic flux-concentrating means (14) are present for the first magnetic element (2) of the first bridge portion (8) and for the element of the second bridge portion (9) having the same orientation of the axis of magnetization (11) as the first element (2).

4. 发明授权

EP1399748B1 SEMIMANUFACTURE FOR A SENSOR FOR MEASURING A MAGNETIC FIELD 有权
标题翻译：半成品FOR传感器，用于测量磁场
公开(公告)号：EP1399748B1
公开(公告)日：2009-10-07
申请号：EP02733067.9
申请日：2002-05-29
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN ZON, Joannes, B., A., D. , RUIGROK, Jacobus, J., M. , GIEBELER, Carsten
IPC分类号： G01R33/09
CPC分类号： G01R33/09
摘要： The semi-finished article for obtaining a sensor for measuring a magnetic field comprises a substrate (1) and a first magnetic element (2), a second magnetic element (3), a third magnetic element (4), and a fourth magnetic element (5) in a bridge configuration. Each of the magnetic elements contains a first magnetic layer (10) having an axis of magnetization (11), the axes of magnetization (11) of the first magnetic layers of the elements (2, 3) in the first bridge portion (8) as well as the axes of magnetization of the elements (4, 5) in the second bridge portion (9) being oriented so as to extend in opposite directions. Close to each of the contacts (6, 7), the axis of magnetization (11) of the element of the first bridge portion (8) is oppositely oriented with respect to the element of the second bridge portion (9). Magnetic flux-concentrating means (14) are present for the first magnetic element (2) of the first bridge portion (8) and for the element of the second bridge portion (9) having the same orientation of the axis of magnetization (11) as the first element (2).

5. 发明公开

EP1116248A1 METHOD OF MANUFACTURING A MAGNETIC TUNNEL JUNCTION DEVICE 有权
标题翻译：方法用于生产具有磁性隧道接触的设备
公开(公告)号：EP1116248A1
公开(公告)日：2001-07-18
申请号：EP00949364.4
申请日：2000-07-17
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN ZON, Joannes, B., A., D.
IPC分类号： H01F41/32 , G11B5/31
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/308 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49156
摘要： A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two electrode layers (3, 7) and a barrier layer (5) extending in between is formed. One of the electrode layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is subsequently removed by means of physical etching, in which at least substantially charged particles have a motion energy which is between the sputtering threshold of the magnetic material of the rest layer and the sputtering threshold of the non-magnetic material of the barrier layer. In the relevant method, it is prevented that the electrode layer which is not to be structured is detrimentally influenced during structuring of the other electrode layer.

6. 发明公开

EP1636810A1 METHOD OF MANUFACTURING A DEVICE WITH A MAGNETIC LAYER-STRUCTURE 审中-公开
标题翻译：方法与磁性层结构的装置
公开(公告)号：EP1636810A1
公开(公告)日：2006-03-22
申请号：EP04735639.9
申请日：2004-06-01
申请人： Koninklijke Philips Electronics N.V.
发明人： RUIGROK, Jacobus, J., M. , VAN ZON, Joannes, B., A., D. , VANHELMONT, Frederik W., M. , GEVEN, Willem, J., A.
IPC分类号： H01F41/14 , H01F10/32 , H01F13/00 , G11B5/39 , H01L43/12 , G01R33/09
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3173 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12 , Y10T428/1107
摘要： A method of manufacturing a device with a magnetic layer-structure is disclosed, the method comprising the steps of: - forming the magnetic layer-structure (2), - heating the magnetic layer-structure with an electric current, wherein the electric current is a pulse (3) having a duration such that no substantial heat transfer from the layer-structure to the environment (4) of the layer- structure takes place, so that the temperature of said environment before and after the current pulse is substantially the same. Heat is substantially dissipated in the layer-structure. The method therefore allows the selection of physical processes in the layer-structure in order to optimize the magnetic or electrical characteristic of the magnetoresistive device, without disturbing the environment such as neighboring devices. The method can advantageously be used to set different magnetization directions (9, 10) in the bias layers (5,7) of different magnetoresistive devices (12,13,14,15) arranged in a Wheatstone bridge configuration (16), or to reduce offset in the output characteristic of said Wheatstone bridge.

7. 发明授权

EP1116043B1 METHOD OF MANUFACTURING A MAGNETIC TUNNEL JUNCTION DEVICE 有权
标题翻译：一种用于生产磁隧道转换设备
公开(公告)号：EP1116043B1
公开(公告)日：2005-07-20
申请号：EP00956193.7
申请日：2000-07-17
申请人： Koninklijke Philips Electronics N.V.
发明人： ADELERHOF, Derk, J. , COEHOORN, Reinder , VAN ZON, Joannes, B., A., D.
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/098 , H01F10/3254 , H01F41/308 , H01L43/12
摘要： A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two magnetic layers (3, 7) and a barrier layer (5) extending in between is formed. One of the magnetic layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is passivated by chemical conversion. In the relevant method, it is prevented that the magnetic layer which is not to be structured is detrimentally influenced during structuring of the other magnetic layer.

8. 发明公开

EP1284005A1 METHOD OF MANUFACTURING A MAGNETIC ELEMENT 审中-公开
标题翻译：一种用于生产磁性元件
公开(公告)号：EP1284005A1
公开(公告)日：2003-02-19
申请号：EP01947235.6
申请日：2001-04-23
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN ZON, Joannes, B., A., D.
IPC分类号： H01F41/04 , H01F41/14 , G11B5/31
CPC分类号： H01F41/02 , G11B5/1272 , G11B5/1871 , G11B5/3116 , G11B5/313 , G11B5/3163 , H01F41/14
摘要： In order to increase the information density on storage media the track width of a written magnetic pattern is made increasingly smaller. This requires write heads having appropriate flux guides. The method disclosed in this patent document provides such flux guides. The method includes the following steps: depositing a non-magnetic layer (3) of sufficient thickness; anisotropically etching the non-magnetic layer to form a steep wall of suitable dimensions at the required position of a flux guide; depositing a magnetic material to form a magnetic layer (9) on the wall in such a manner that the magnetic layer has a thickness corresponding to the required track width; removing undesired deposits of magnetic material but maintaining the magnetic layer on the wall; depositing an insulating material (19a) to cover the magnetic layer.

9. 发明公开

EP1116043A1 METHOD OF MANUFACTURING A MAGNETIC TUNNEL JUNCTION DEVICE 有权
标题翻译：一种用于生产磁隧道转换设备
公开(公告)号：EP1116043A1
公开(公告)日：2001-07-18
申请号：EP00956193.7
申请日：2000-07-17
申请人： Koninklijke Philips Electronics N.V.
发明人： ADELERHOF, Derk, J. , COEHOORN, Reinder , VAN ZON, Joannes, B., A., D.
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/098 , H01F10/3254 , H01F41/308 , H01L43/12
摘要： A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two magnetic layers (3, 7) and a barrier layer (5) extending in between is formed. One of the magnetic layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is passivated by chemical conversion. In the relevant method, it is prevented that the magnetic layer which is not to be structured is detrimentally influenced during structuring of the other magnetic layer.

10. 发明授权

EP1399749B1 COMPENSATING A SENSOR FOR MEASURING A MAGNETIC FIELD 有权
标题翻译：的探头的测量磁场补偿
公开(公告)号：EP1399749B1
公开(公告)日：2009-08-19
申请号：EP02733088.5
申请日：2002-05-29
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN ZON, Joannes, B., A., D.
IPC分类号： G01R33/09
CPC分类号： G01R33/09
摘要： The sensor for measuring a magnetic field comprises a substrate (1), a first magnetic element (2), a second magnetic element (3), a third magnetic element (4) and a fourth magnetic element (5) in a bridge configuration on the substrate (1), a first bridge portion (8), wherein the first element (2) and the second element (3) are connected in series, and a second bridge portion (9), wherein the third element (4) and the fourth element (5) are connected in series, being situated between a first contact (6) and a second contact (7). The first bridge portion (8) comprises an electrical shunt resistor (10), which is arranged parallel to the first magnetic element (2) of the bridge and which has a temperature coefficient and is positive or negative in sign. In order to compensate for offset voltage and offset voltage drift in the output voltage of the bridge configuration, the temperature coefficient of the shunt resistor (10) compensates for the variation of the temperature coefficients of the magnetic elements (2, 3, 4, 5) in the bridge. The method of reducing offset voltage drift and offset voltage of the magnetic sensor includes steps whereby first the temperature coefficient of the bridge is compensated for by means of the shunt resistor (10) and, subsequently, the offset voltage is reduced to zero by means of a trimmer resistor (18).

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