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21. 发明公开

EP2777930A1 GAS BARRIER FILM AND METHOD FOR PRODUCING GAS BARRIER FILM 有权
标题翻译： GASSPERRFILM UND VERFAHREN ZUR HERSTELLUNG DES GASSPERRFILMS
公开(公告)号：EP2777930A1
公开(公告)日：2014-09-17
申请号：EP12847937.5
申请日：2012-10-12
申请人： Lintec Corporation
发明人： NAGANAWA Satoshi , SUZUKI Yuta
IPC分类号： B32B9/00 , C23C14/48
CPC分类号： C23C14/48 , C01B21/0823 , C08J7/047 , C08J7/123 , C08J2367/02 , C08J2483/16 , C23C14/0676 , Y10T428/265
摘要： A gas barrier film having excellent gas barrier properties, and a method for producing such a gas barrier film are provided.
Disclosed are a gas barrier film obtained by forming a gas barrier layer on a base material, and a method for producing such a gas barrier film, in which the gas barrier layer contains at least oxygen atoms, silicon atoms and nitrogen atoms, and in connection with the amount of nitrogen, the amount of silicon and the amount of oxygen measured by an XPS analysis, when the surface of the gas barrier layer that is in contact with the base material is designated as a base material side, and the opposite surface is designated as a surface side, the gas barrier layer includes a first region constituted in the order of the amount of oxygen > the amount of silicon > the amount of nitrogen; a second region constituted in the order of the amount of silicon > the amount of oxygen > the amount of nitrogen; and a third region constituted in the order of the amount of oxygen > the amount of silicon > the amount of nitrogen, from the surface side toward the base material side.
摘要翻译：提供阻气性优异的阻气膜及其制造方法。公开了通过在基材上形成阻气层而获得的阻气膜，以及其中气体阻隔层至少含有氧原子，硅原子和氮原子并且在连接中的阻气膜的制造方法当与基材接触的阻气层的表面被指定为基材侧时，通过XPS分析测量的氮的量，硅的量和氧的量被测定，并且相对表面是指定为表面侧，阻气层包括以氧的量>硅的量>氮的量的顺序构成的第一区域; 以硅的量>氧的量>氮的量的顺序构成的第二区域; 以及从表面侧朝向基材侧的氧的量>硅的量>氮的量的顺序构成的第三区域。

22. 发明公开

EP2121522A2 VERFAHREN ZUR HERSTELLUNG HÖHERER SILANE 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNGHÖHERERSILANE
公开(公告)号：EP2121522A2
公开(公告)日：2009-11-25
申请号：EP07857943.0
申请日：2007-12-20
申请人： Evonik Degussa GmbH
发明人： LANG, Jürgen Erwin , RAULEDER, Hartwig , MÜH, Ekkehard
IPC分类号： C01B33/107
CPC分类号： B01J19/088 , B01J2219/0803 , B01J2219/0894 , C01B21/068 , C01B21/0823 , C01B32/907 , C01B33/04 , C01B33/107 , C01B33/12 , C01B33/36 , C01G17/00 , C01P2002/86 , C07F7/083 , C07F7/30
摘要： The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.
摘要翻译：本发明涉及一种生产二聚和/或三聚硅化合物，特别是硅卤素化合物的方法。所要求保护的方法也适用于生产相应的锗化合物。本发明还涉及一种用于实施所述方法来使用所生产的硅化合物的装置。

23. 发明公开

EP1887067A1 PHOSPHOR AND USE THEREOF 有权转让
标题翻译： LEUCHTSTOFF UND SEINE VERWENDUNG
公开(公告)号：EP1887067A1
公开(公告)日：2008-02-13
申请号：EP06756518.4
申请日：2006-05-24
申请人： Mitsubishi Chemical Corporation , Independent Administrative Institution National Institute for Materials Science
发明人： HIROSAKI, Naoto, NATIONAL INST. FOR MAT. SCIENCE , SETO, Takatoshi, Mitsubishi Chem. Group , KIJIMA, Naoto, Mitsubishi Chem. Group
IPC分类号： C09K11/64 , C09K3/00 , C09K11/08 , H01J5/08 , H01L33/00 , H01S5/022 , H01J1/63 , H01J11/02 , H01J29/20 , H01J31/15
CPC分类号： C09K11/0883 , C01B21/0602 , C01B21/0821 , C01B21/0823 , C01B21/0826 , C04B35/581 , C04B35/593 , C04B35/597 , C04B35/6262 , C04B2235/3208 , C04B2235/3217 , C04B2235/3224 , C04B2235/3229 , C04B2235/3418 , C04B2235/3852 , C04B2235/386 , C04B2235/3865 , C04B2235/3878 , C04B2235/3895 , C04B2235/40 , C04B2235/401 , C04B2235/402 , C04B2235/428 , C04B2235/46 , C04B2235/5409 , C04B2235/5445 , C04B2235/656 , C04B2235/6562 , C04B2235/6582 , C04B2235/761 , C09K11/7721 , C09K11/7734 , C09K11/7792 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
摘要： A phosphor which emits light having high brightness, serves as an excellent orange or red phosphor whose light brightness is less decreased when exposed to an excitation source contains a crystal phase having the chemical composition expressed by the general formula [1]: 1 - a - b ⁢ Lnʹ p ⁢ M IIʹ 1 - p ⁢ M IIIʹ ⁢ M IVʹ ⁢ N 3 ⋅ a ⁢ M IVʹ ( 3 ⁢ n + 2 ) / 4 ⁢ N n ⁢ O ⋅ b AM IVʹ 2 ⁢ N 3
wherein Ln' represents a metal element selected from the group consisting of lanthanoids, Mn, and Ti; Mn II' represents a divalent metal element except the Ln' element; M III' represents a trivalent metal element; M IV' represents a tetravalent metal element; A represents a metal element selected from the group consisting of Li, Na, and K; 0 0, 0 ≤ n, and 0.002 ≤ (3n + 2)a/4 ≤ 0.9.
摘要翻译：发出高亮度的光的荧光体用作当暴露于激发源时光亮度降低较少的优异的橙色或红色荧光体含有具有由通式[1]表示的化学组成的结晶相：1-a- b ¢¢¹ ¢¢¢¹¹¹¢¢M M ¢¢¢¢¢¢¢¢¢¢¢¢¢¢¢¢O O O O O O O O O O O O O O O O O IV 1 2 ¢N 3其中Ln'表示选自镧系元素，Mn和Ti的金属元素; Mn II'表示除了Ln'元素以外的二价金属元素; M III'代表三价金属元素; M IV'表示四价金属元素; A表示选自Li，Na和K的金属元素; 0 0,0‰n和0.002‰（3n + 2）a / 4‰0.9。

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