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21. 发明公开

EP2851969A4 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权转让
公开(公告)号：EP2851969A4
公开(公告)日：2016-03-02
申请号：EP14766651
申请日：2014-04-30
申请人： SEMICON LIGHT CO LTD
发明人： PARK EUN HYUN , JEON SOO KUN
IPC分类号： H01L33/46 , H01L33/40
CPC分类号： H01L33/46 , H01L33/387 , H01L33/405
摘要： The present disclosure relates to a semiconductor light emitting device, which comprises: a plurality of semiconductor layers; a contact area where a first semiconductor layer is exposed as a result of the partial removal of a second semiconductor layer and an active layer; a non-conductive reflective film adapted to cover the second semiconductor layer and the contact area, such that light from the active layer is reflected towards the first semiconductor layer on the side of a growth substrate; a finger electrode extending between the non-conductive reflective film and the plurality of semiconductor layers; an electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the finger electrode; and a direct-connection type electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the plurality of semiconductor layers.

22. 发明公开

EP2782147A4 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权转让
标题翻译：用于生产发光半导体元件
公开(公告)号：EP2782147A4
公开(公告)日：2015-08-05
申请号：EP13819520
申请日：2013-07-18
申请人： SEMICON LIGHT CO LTD
发明人： JEON SOO KUN , PARK EUN HYUN , KIM YONG DEOK
IPC分类号： H01L33/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46
CPC分类号： H01L33/005 , H01L33/007 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/16245 , H01L2933/0025 , H01L2933/0058
摘要： The present disclosure relates to a method of manufacturing a semiconductor light emitting device, comprising: forming a finger electrode in electrical communication with a second semiconductor layer; forming, on the finger electrode, a non-conductive reflective layer made up of a multi-layer dielectric film, for reflecting light from the active layer towards a first semiconductor layer on the side of a growth substrate, with the non-conductive reflective layer including a bottom layer formed by chemical vapor deposition and at least two layers formed by physical vapor deposition; and forming an electrical connection, passing through the non-conductive reflective film and being connected the finger electrode.

23. 发明公开

EP2784832A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权转让
标题翻译：半导体发光器件
公开(公告)号：EP2784832A1
公开(公告)日：2014-10-01
申请号：EP13736026.9
申请日：2013-01-14
申请人： Semicon Light Co. Ltd.
发明人： JEON, Soo Kun , PARK, Eun Hyun
IPC分类号： H01L33/36 , H01L33/46 , H01L33/38
CPC分类号： H01L33/46 , H01L33/382
摘要： The present disclosure relates to a semiconductor light-emitting device, comprising: a plurality of semiconductor layers grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to a first semiconductor layer; a non-conductive reflective film formed over a second semiconductor layer to reflect light from a active layer towards the first semiconductor layer which is on the growth substrate side; and a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes.
摘要翻译：本公开涉及一种半导体发光器件，包括：使用生长衬底顺序生长的多个半导体层; 用于向第一半导体层提供电子或空穴的第一电极; 非导电反射膜，形成在第二半导体层上方以将来自有源层的光反射向位于生长衬底侧的第一半导体层; 以及形成在所述多个半导体层与所述不导电反射膜之间的指状电极，所述非导电反射膜延伸以向所述第二半导体层提供剩余的电子或空穴，所述第二半导体层与所述第二半导体层电连通，用于接收剩余电子或空穴的电连接。

24. 发明公开

EP2782150A2 LIGHT EMITTING DEVICE PACKAGE AND BACKLIGHT INCLUDING SAME 有权转让
标题翻译：与发光器件和尾灯包，以便
公开(公告)号：EP2782150A2
公开(公告)日：2014-09-24
申请号：EP12850417.2
申请日：2012-11-16
申请人： Lumens Co., Ltd.
发明人： OH, Seung Hyun , KIM, Pyoung Gug , LEE, Seung Hoon , MIN, Chun Ki , LIM, Jung A , LIM, Jun Hyung , JUNG, Cheol Hun , CHUNG, Bo Hyun
IPC分类号： H01L33/48 , H01L33/60 , H01L33/62
CPC分类号： H01L33/62 , G02B6/0031 , G02B6/0073 , G02B6/0085 , G02F1/133615 , G02F2001/133614 , H01L33/486 , H01L33/54 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is a light emitting element package having excellent heat radiation performance and high luminance, and a backlight unit including the same. The light emitting element package includes a package including a lead frame, a light emitting element provided on the lead frame, and a molded material combined with the lead frame and having an opening for emitting light generated by the light emitting element, and a reflection structure having an opening corresponding to the opening of the molded material, and contacting the molded material.

25. 发明授权

EP3490014B1 LED CHIP AND LED MODULE USING THE LED CHIP 有权
公开(公告)号：EP3490014B1
公开(公告)日：2020-10-21
申请号：EP18194148.5
申请日：2018-09-13
申请人： Lumens Co., Ltd.
发明人： KIM, Daewon , WON, Yelim
IPC分类号： H01L33/40 , H01L33/44 , H01L33/62

26. 发明授权

EP2782147B1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权转让
公开(公告)号：EP2782147B1
公开(公告)日：2020-03-11
申请号：EP13819520.1
申请日：2013-07-18
申请人： Semicon Light Co., Ltd.
发明人： JEON, Soo Kun , PARK, Eun Hyun , KIM, Yong Deok
IPC分类号： H01L33/46 , H01L33/38

27. 发明授权

EP2784832B1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权转让
公开(公告)号：EP2784832B1
公开(公告)日：2019-03-27
申请号：EP13736026.9
申请日：2013-01-14
申请人： Semicon Light Co., Ltd.
发明人： JEON, Soo Kun , PARK, Eun Hyun
IPC分类号： H01L33/36 , H01L33/46 , H01L33/38

28. 发明公开

EP3288346A1 LED LIGHTING DEVICE 审中-公开
标题翻译： LED照明装置
公开(公告)号：EP3288346A1
公开(公告)日：2018-02-28
申请号：EP17192653.8
申请日：2013-06-03
申请人： Lumens Co., Ltd.
发明人： GONG, Myeong Kook , JUNG, Hee Jin
IPC分类号： H05B37/02
CPC分类号： H05B33/0815 , H05B33/0845 , H05B33/0884 , Y02B20/348
摘要： Provided is a circuit for preventing an operating current of a TRIAC dimmer from being dropped below a holding current value. In this regard, a light emitting diode (LED) lighting device includes a TRIAC dimmer for controlling intensity of light emitted from an LED, a load connected between an output terminal of the TRIAC dimmer and a bridge rectifier to stabilize operation of the TRIAC dimmer even in low dimming level periods of the TRIAC dimmer, the bridge rectifier connected with the load to supply an operating current to the LED; and the LED for receiving the operating current from the bridge rectifier.
摘要翻译：提供了一种用于防止TRIAC调光器的工作电流下降到保持电流值以下的电路。在这点上，发光二极管（LED）照明装置包括用于控制从LED发射的光的强度的TRIAC调光器，连接在TRIAC调光器的输出端和桥式整流器之间的负载，以稳定TRIAC调光器的操作在TRIAC调光器的低调光水平期间，桥式整流器与负载连接以向LED提供工作电流; 以及用于从桥式整流器接收工作电流的LED。

29. 发明公开

EP2784832A4 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权转让
标题翻译：一种半导体发光元件
公开(公告)号：EP2784832A4
公开(公告)日：2015-08-05
申请号：EP13736026
申请日：2013-01-14
申请人： SEMICON LIGHT CO LTD
发明人： JEON SOO KUN , PARK EUN HYUN
IPC分类号： H01L33/36 , H01L33/38 , H01L33/46
CPC分类号： H01L33/46 , H01L33/382
摘要： The present disclosure relates to a semiconductor light-emitting device, comprising: a plurality of semiconductor layers grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to a first semiconductor layer; a non-conductive reflective film formed over a second semiconductor layer to reflect light from a active layer towards the first semiconductor layer which is on the growth substrate side; and a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes.

30. 发明公开

EP2782148A4 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权转让
公开(公告)号：EP2782148A4
公开(公告)日：2015-08-05
申请号：EP13819369
申请日：2013-07-18
申请人： SEMICON LIGHT CO LTD
发明人： JEON SOO KUN , PARK EUN HYUN , KIM YONG DEOK
IPC分类号： H01L33/00 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46
CPC分类号： H01L33/46 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/44
摘要： The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

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