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11. 发明授权

EP2678869B1 RESISTIVE STRUCTURE AND RESISTIVE VOLTAGE DIVIDER ARRANGEMENT 有权
公开(公告)号：EP2678869B1
公开(公告)日：2018-10-17
申请号：EP12717172.6
申请日：2012-02-25
申请人： ABB AG
发明人： HOZOI, Adrian , DISSELNKÖTTER, Rolf , PAVLAS, Marek
IPC分类号： H01C7/00 , H01C7/22 , H01C17/065 , G01R15/04
CPC分类号： H01C1/00 , G01R15/04 , G01R19/0084 , H01C7/003 , H01C7/22 , H01C17/065
摘要： A resistive structure has an improved electric field profile deposited on the surface of a cylindrical insulating substrate. At least one resistive path or trace is provided with a helix-looking shape and is directly printed on the surface of the insulating substrate. A resistive voltage divider includes first and second resistors electrically connected in series, where each resistor is made of one or more traces of electrically resistive film material applied onto a cylindrical insulating substrate. At least one of the traces is shaped like a helix and is applied onto the substrate by direct printing.

12. 发明公开

EP3193340A4 THIN FILM RESISTIVE BODY AND PRODUCTION METHOD FOR SAME 无效
公开(公告)号：EP3193340A4
公开(公告)日：2018-04-18
申请号：EP15840330
申请日：2015-08-20
申请人： SHOEI CHEMICAL IND CO
发明人： MASHIMA HIROSHI , MOROFUJI YUKARI
IPC分类号： H01C7/00 , H01B1/20 , H01B13/00
CPC分类号： H01C7/003 , C03C3/068 , C03C3/072 , C03C3/074 , C03C3/085 , C03C3/087 , C03C3/089 , C03C3/091 , C03C3/093 , C03C3/105 , C03C3/108 , C03C4/14 , C03C8/02 , C03C8/04 , C03C8/10 , C03C8/18 , C03C8/22 , C03C2204/00 , C03C2205/00 , C09D11/03 , C09D11/037 , C09D11/52 , H01B1/08 , H01B1/14 , H01B1/20 , H01C7/00 , H01C7/023 , H01C17/06533
摘要： An object of the present invention is to provide a thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The present invention is a thick film resistor formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component being essentially free of a lead component and has a resistance value in the range of 100 ©/–¡ to 10 M©/–¡ and a temperature coefficient of resistance within ±100 ppm/°C.

13. 发明授权

EP2402297B1 ELECTRICALLY CONDUCTIVE OXIDE SINTERED COMPACT, THERMISTOR ELEMENT EMPLOYING THE SAME, AND TEMPERATURE SENSOR EMPLOYING THE SAME 有权
标题翻译：导电氧化物烧结的紧凑型电阻器，使用该元件的热敏元件和使用该元件的温度传感器
公开(公告)号：EP2402297B1
公开(公告)日：2018-01-03
申请号：EP10743817.8
申请日：2010-02-18
申请人： NGK SPARK PLUG CO., LTD.
发明人： OKIMURA Yasuyuki , BAN Shinji , WATANABE Hiroshi , MITSUOKA Takeshi
IPC分类号： C04B35/50 , C04B35/44 , H01B1/08 , H01C7/04 , H01C7/00 , H01C17/065
CPC分类号： H01B1/08 , C04B35/44 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3243 , C04B2235/3268 , C04B2235/3274 , C04B2235/656 , C04B2235/76 , C04B2235/768 , C04B2235/80 , H01C7/008 , H01C17/06533 , H01C17/06553
摘要： A sintered electroconductive oxide (1) forming a thermistor element (2) has a first crystal phase having a composition represented by RE1 4 Al 2 O 9 and a second crystal phase having a perovskite structure represented by (RE2 1-a SL a )MO 3 , and that the factor a of the second crystal phase satisfies the following condition: 0.18

14. 发明授权

EP2100313B1 HIGH RESISTIVITY THIN FILM COMPOSITION AND FABRICATION METHOD 失效
标题翻译：高电阻率薄膜组成及其制备方法
公开(公告)号：EP2100313B1
公开(公告)日：2017-11-08
申请号：EP07837481.6
申请日：2007-08-28
申请人： Analog Devices, Inc.
发明人： LEE, Michael , WRIGHT, Steven , JUDGE, Philip , WILSON, Craig , CESTRA, Gregory , BOWERS, Derek
IPC分类号： H01C7/00
CPC分类号： H01C7/006 , Y10T29/49082

15. 发明授权

EP2952863B1 TEMPERATURE SENSOR 失效
标题翻译：温度感应器
公开(公告)号：EP2952863B1
公开(公告)日：2017-09-13
申请号：EP13873239.1
申请日：2013-12-17
申请人： Mitsubishi Materials Corporation
发明人： NAGATOMO, Noriaki , INABA, Hitoshi , TAKESHIMA, Kazuta , TANAKA, Hiroshi
IPC分类号： G01K7/22 , G01K13/08 , H01C7/04 , H01C1/14 , G01K1/14 , H01C1/142 , H01C7/00
CPC分类号： G01K7/22 , G01K1/143 , G01K13/08 , H01C1/14 , H01C1/1406 , H01C1/1413 , H01C1/142 , H01C7/006 , H01C7/008 , H01C7/04 , H01L23/495 , H01L35/02 , H01L2924/0002 , H01L2924/00

16. 发明授权

EP2713378B1 Laminated chip electronic component, board for mounting the same, and packing unit thereof 失效转让
标题翻译：层压芯片电子元件，用于安装其的板和其包装单元
公开(公告)号：EP2713378B1
公开(公告)日：2017-08-30
申请号：EP12275199.3
申请日：2012-12-10
申请人： Samsung Electro-Mechanics Co., Ltd
发明人： Lee, Sun Cheol , Kim, Woo Sup , Kim, Dong Gun , Kim, Kyeong Jun , Lee, Kyu Ho
IPC分类号： H01G4/30 , H01G2/06 , H01G2/24 , H01L41/08 , H05K1/18 , H01C7/00 , H01C7/10 , H01L41/083
CPC分类号： H05K1/181 , H01C7/008 , H01C7/10 , H01G2/06 , H01G2/24 , H01G4/06 , H01G4/12 , H01G4/30 , H01L41/083 , H05K1/0306 , Y02P70/611

17. 发明公开

EP3193341A1 RESISTIVE COMPOSITION 审中-公开
标题翻译：电阻成分
公开(公告)号：EP3193341A1
公开(公告)日：2017-07-19
申请号：EP15840611.6
申请日：2015-08-20
申请人： Shoei Chemical Inc.
发明人： MASHIMA, Hiroshi , MOROFUJI, Yukari
IPC分类号： H01C7/00 , H01B1/20 , H01B13/00
CPC分类号： H01B1/20 , C03C3/066 , C03C3/074 , C03C3/087 , C03C3/089 , C03C3/091 , C03C8/02 , C03C8/04 , C03C8/10 , C03C8/16 , C03C14/004 , C03C14/006 , C03C2214/04 , C03C2214/16 , C03C2214/30 , C09D5/24 , H01C7/003
摘要： An object of the present invention is to provide a resistive composition that can form a thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The resistive composition of the present invention includes: ruthenium-based conductive particles including ruthenium dioxide; a glass frit that is essentially free of a lead component; and an organic vehicle, wherein the glass frit is a glass frit which is constituted such that in a case where a fired product of a mixture of the glass frit and the ruthenium dioxide has in a range of 1 kΩ/□ to 1 MΩ/□, the fired product exhibits a temperature coefficient of resistance in a plus range.
摘要翻译：本发明的一个目的是提供一种电阻性组合物，其可以在宽电阻范围内形成厚膜电阻器，所述厚膜电阻器除了来自导电组分和玻璃的有毒铅组分外，并且具有与常规电阻体等同或优于其特性的特性，电阻值，TCR特性，电流噪声特性，耐压特性等。本发明的电阻组合物包含：包含二氧化钌的钌基导电颗粒; 基本上不含铅组分的玻璃料; 以及有机载体，其中所述玻璃料为玻璃料，其被构成为使得在所述玻璃料和所述二氧化钌的混合物的烧制产物具有1kΩ/□至1MΩ/□的范围内的情况下，焙烧后的产品的电阻温度系数在正范围内。

18. 发明公开

EP3178097A1 VARISTOR HAVING MULTILAYER COATING AND FABRICATION METHOD 有权
标题翻译：具有多层涂层的变压器及其制造方法
公开(公告)号：EP3178097A1
公开(公告)日：2017-06-14
申请号：EP15830254.7
申请日：2015-03-06
申请人： Dongguan Littelfuse Electronics, Co., Ltd.
发明人： YANG, Wen , CHENG, Hao
IPC分类号： H01C7/00 , H01C7/112 , H01C17/00
CPC分类号： H01C7/112 , H01C1/032 , H01C7/102 , H01C17/02 , H01C17/06546 , H01C17/06586 , H01C17/285
摘要： In one embodiment a varistor may include a ceramic body. The varistor may further comprise a multilayer coating disposed around the ceramic body. The multilayer coating may include an outer layer comprising an epoxy material. The multilayer coating may also include an inner layer that is adjacent the ceramic body and is disposed between the outer layer and the ceramic body. The inner layer may comprise a polymeric material that is composed of an acrylic component.
摘要翻译：在一个实施例中，变阻器可以包括陶瓷体。变阻器可以进一步包括设置在陶瓷体周围的多层涂层。多层涂层可以包括包含酚醛材料或硅酮材料的第一层; 以及与第一层相邻的第二层，第二层包括高介电强度涂层。

19. 发明授权

EP2822002B1 METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM THERMISTOR SENSOR 有权
标题翻译：金属热敏电阻器，HERMTELLUNGSVERFAHRENDAFÜRUND FILMTHERMISTORSENSOR
公开(公告)号：EP2822002B1
公开(公告)日：2017-03-29
申请号：EP13754695.8
申请日：2013-02-21
申请人： Mitsubishi Materials Corporation
发明人： FUJITA, Toshiaki , TANAKA, Hiroshi , INABA, Hitoshi , FUJIWARA, Kazutaka , NAGATOMO, Noriaki
IPC分类号： H01C7/04 , H01C7/00 , G01K7/22 , C30B25/06 , C30B29/38 , C23C14/00 , C23C14/06 , H01C7/02
CPC分类号： H01C7/008 , C23C14/0036 , C23C14/0641 , C30B29/38 , G01K7/22 , H01C7/04 , H01C7/041
摘要： Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Ti x Al y (N 1-w O w ) z (where 0.70 ‰¤ y/(x+y) ‰¤ 0.95, 0.45 ‰¤ z ‰¤0.55, 0
摘要翻译：提供一种用于热敏电阻的金属氮化物材料，其具有高可靠性和高耐热性，并且可以直接在膜等上沉积而不烧结，制造用于热敏电阻的金属氮化物材料的方法和膜型热敏电阻传感器。用于热敏电阻的金属氮化物材料由以下通式表示的金属氮化物组成：Ti x Al y（N 1 -w O w）z（其中0.70‰¤y /（x + y）‰‰0.95，0.45‰¤ z‰¤0.55,0‰¤0.35，x + y + z = 1，其晶体结构为六方纤锌矿型单相。

20. 发明授权

EP2043110B1 Manteldraht und Schichtwiderstand 有权
标题翻译：涂覆线材和片材电阻
公开(公告)号：EP2043110B1
公开(公告)日：2017-03-15
申请号：EP08016617.6
申请日：2008-09-22
申请人： HERAEUS SENSOR TECHNOLOGY GMBH
发明人： Zinkevich, Matsvei, Dr.
IPC分类号： H01B3/00 , H01B1/02 , H01C7/00 , G01K7/18
CPC分类号： H01C7/00 , G01K7/183 , H01B1/02 , H01B3/004 , Y10T29/49098

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