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11. 发明授权

EP0621631B1 Method of forming resistors for integrated circuits by using trenches 失效
标题翻译：一种用于制造电阻器用于使用沟槽集成电路方法
公开(公告)号：EP0621631B1
公开(公告)日：2001-06-27
申请号：EP94301640.2
申请日：1994-03-08
申请人： Nortel Networks Limited
发明人： Boyd, John M. , Ellul, Joseph P. , Tay, Sing P.
IPC分类号： H01L21/3205 , H01L21/02 , H01L29/86 , H01L27/11
CPC分类号： H01L28/20 , H01L27/0802

12. 发明公开

EP1096569A1 Quantum wire array, uses thereof, and methods of making the same 审中-公开
标题翻译： Quantendrahtmatrix，Verwendungen derselben，und Verfahren zu deren Herstellung
公开(公告)号：EP1096569A1
公开(公告)日：2001-05-02
申请号：EP99121606.0
申请日：1999-10-29
申请人： Ohnesorge, Frank, Dr.
发明人： Ohnesorge, Frank , Weidinger, Alois , Neumann, Reinhard , Toulemond, Marcel, c/o CERIL, Lab. Com., CEA-CNRS , Trautmann, Christina , Witke, Thomas, c/o Fraunhofer Gesellschaft
IPC分类号： H01L27/10 , H01L29/86 , H01L29/66 , H01L29/16 , H01L29/24 , H01L51/20 , H01L21/8256 , H01L21/263
CPC分类号： H01L29/861 , B82Y10/00 , G11C11/56 , G11C13/02 , G11C2213/81 , H01L29/125 , H01L29/1604 , H01L51/0595
摘要： The present invention relates to an array (4) of one-dimensional quantum wires (6) useable for electronic circuitry, logic circuitry and flat display circuitry, wherein the array comprises a semi-insulating or insulating solid film (3,5) and a plurality of one dimensional quantum wires embedded with their longitudinal extension within said film and accessible at their end portions (7,8) on both surfaces (9,10) of said film and a method for producing such an array of one-dimensional quantum wires by forming an insulating or semi-insulating film and creating latent ion tracks to form quantum wires within said film by directing a beam of fast heavy ions toward the surface of said film. Where the solid film is made of amorphous carbon having insulating diamond-like bonds, the heavy ions generate conductive graphite-like bonds in the solid film. The quantum wires may form logical cells of a multilevel logic device and may then comprise a quantum interference device (13,14,15,23,24,25) to read out the stored information.
摘要翻译：本发明涉及可用于电子电路，逻辑电路和平面显示电路的一维量子线（6）的阵列（4），其中阵列包括半绝缘或绝缘固体膜（3,5）和多个一维量子线，其在其膜中嵌入其纵向延伸并且可在其所述膜的两个表面（9,10）上的端部（7,8）处接近，并且可以制造这种一维量子线阵列通过形成绝缘或半绝缘膜并通过将快速重离子束引向所述膜的表面来产生潜离子轨迹以在所述膜内形成量子线。在固体膜由具有绝缘金刚石键的无定形碳制成的情况下，重离子在固体膜中产生导电石墨状键。量子线可以形成多电平逻辑器件的逻辑单元，然后可以包括用于读出存储的信息的量子干涉器件（13,14,15,23,24,25）。

13. 发明公开

EP1047135A2 Fast turn-off power semiconductor devices 审中-公开
标题翻译： Leistungshalbleiteranordnungen mit schnellem Abschalten
公开(公告)号：EP1047135A2
公开(公告)日：2000-10-25
申请号：EP00401111.0
申请日：2000-04-20
申请人： Intersil Corporation
发明人： Hao, Jifa
IPC分类号： H01L29/86 , H01L29/739 , H01L29/16
CPC分类号： H01L29/04 , H01L29/861 , H01L29/868
摘要： A semiconductor switch is provided with fast turn-off characteristics by the mechanism of rapid recombination of minority carriers within a charge injecting region of the device. The region itself, or a portion of each of a plurality of parallelconnected such regions, comprises a body of highly doped polycrystalline silicon comprising tiny mono-crystalline grains of silicon joined at boundaries between the grains. The grain boundaries provide deep level energy traps for the capture and rapid annihilation, by recombination, of minority carriers within the polycrystalline body. An electrode is ohmically contacted with the one or each polycrystalline silicon body for efficient injection of majority carriers into the body.
摘要翻译：高掺杂n型掺杂剂（砷或锑）原子的硅层（30）被中度掺杂（31）和轻掺杂（32）层覆盖。 p-发射极区（60）与轻掺杂层形成p-n结（62）。二氧化硅（36）的电介质层围绕接触p-发射极区的p型重掺杂多晶硅层（64），并且直接覆盖并接触多晶硅层提供附加金属层（66）。

14. 发明公开

EP0978159A1 VORRICHTUNG ZUM BEGRENZEN ELEKTRISCHER WECHSELSTRÖME, INSBESONDERE IM KURZSCHLUSSFALL 失效
标题翻译：设备限制电气FLOWS变化，特别是在短暂回落
公开(公告)号：EP0978159A1
公开(公告)日：2000-02-09
申请号：EP98931894.4
申请日：1998-04-09
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： MITLEHNER, Heinz , STEPHANI, Dietrich , BARTSCH, Wolfgang
IPC分类号： H02H9/00 , H01L29/86
CPC分类号： H01L29/1608 , H01L29/8083 , H02H9/02
摘要： The invention relates to a device for limiting electrical alternating currents, comprising a) at least one semiconductor device (H1, H2, H3) which is connected in the current path of the alternating current. Said semiconductor device is configured or can be controlled in such a way that when a forward voltage is applied, a forward current flows through the device. Said forward current increases monotonously with a forward voltage starting from zero voltage to a saturation current with a corresponding saturation voltage. When the forward voltage exceeds the saturation voltage, said forward voltage is limited to a limit current below the saturation current. When a backward voltage is applied, a backward current flows through the semiconductor device. Said backward current increases monotonously with a backward voltage starting from zero voltage to a predetermined backward breakdown voltage. When the predetermined backward breakdown voltage is exceeded, the backward current increases significantly more sharply due to a charge carrier breakdown. The inventive device for limiting electrical alternating currents also comprises b) a circuit breaker which prevents the semi-conductor device (H1, H2, H3) from being driven into the backward breakdown voltage in the half-wave of the alternating current, which is polarised in its backward direction, especially in the event of an overload or a short circuit.

15. 发明授权

EP0593982B1 Si/SiGe BARITT-Diode 失效
标题翻译：的Si / SiGe异质二极管BARITT
公开(公告)号：EP0593982B1
公开(公告)日：1997-12-17
申请号：EP93116212.7
申请日：1993-10-07
申请人： Daimler-Benz Aktiengesellschaft
发明人： Jorke, Helmut , Luy, Johann-Friedrich
IPC分类号： H01L29/86
CPC分类号： H01L29/864

16. 发明授权

EP0518790B1 Composant de protection bidirectionnel 失效
标题翻译：双向保护元件
公开(公告)号：EP0518790B1
公开(公告)日：1997-12-03
申请号：EP92420195.7
申请日：1992-06-09
申请人： SGS-THOMSON MICROELECTRONICS S.A.
发明人： Pezzani, Robert
IPC分类号： H02H9/04 , H01L29/86
CPC分类号： H02H9/04 , H01L29/87

17. 发明授权

EP0542648B1 Composant semiconducteur de protection contre des surtensions 失效
标题翻译：半导体装置，以防止浪涌
公开(公告)号：EP0542648B1
公开(公告)日：1997-06-11
申请号：EP92420406.8
申请日：1992-11-09
申请人： SGS-THOMSON MICROELECTRONICS S.A.
发明人： Bernier, Eric
IPC分类号： H01L29/86
CPC分类号： H01L29/87

18. 发明公开

EP0631326A2 Semiconductor memory device and method of manufacturing same 失效
标题翻译：一种半导体存储器件及其制造方法。
公开(公告)号：EP0631326A2
公开(公告)日：1994-12-28
申请号：EP94107261.3
申请日：1994-05-10
申请人： ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI
发明人： Nishizawa, Jun-ichi
IPC分类号： H01L29/86 , H01L29/72 , H01L21/329 , H01L21/331
CPC分类号： H01L29/66356 , H01L29/66196 , H01L29/739 , H01L29/8616
摘要： A semiconductor device has an n⁺ source region (7), a first n⁻ channel region (5), a barrier layer (6), a second n⁻ channel region (5'), a pair of n⁺ drain regions (2), an insulating film (4), and a pair of metal electrodes (3) over the respective n⁺ drain regions (2), all successively disposed on an upper surface of an n⁺ crystal substrate (8). The drain regions (2) and the metal electrodes (3) jointly provide a storage electric capacitance. A source electrode (10) is disposed on the lower surface of the n⁺ crystal substrate (8). Bit information can be written and read at a high speed by tunneling through the barrier layer (6). According to a method of manufacturing the above semiconductor device, the n⁺ source region (7), the first n⁻ channel region (5), the barrier layer (6), the second n⁻ channel region (5'), the n⁺ drain regions (2), the insulating film (4), and the metal electrodes (3) are successively deposited on the n⁺ crystal substrate (8) in a growing apparatus. The metal electrodes (3) and the source electrode (10) are formed by depositing a metal and a low-resistance semiconductor selectively or both in one location within the growing apparatus.

19. 发明公开

EP0579502A3 Solid state transient suppressor 失效
标题翻译：固态瞬态抑制器
公开(公告)号：EP0579502A3
公开(公告)日：1994-03-30
申请号：EP93305581.6
申请日：1993-07-15
申请人： TEXAS INSTRUMENTS INCORPORATED , TEXAS INSTRUMENTS LIMITED
发明人： Byatt, Stephen Wilton
IPC分类号： H01L29/747 , H01L29/86 , H01L29/08
CPC分类号： H01L29/87 , H01L2924/10157 , H01L2924/10158
摘要： This invention relates to an improved solid state suppressor, such as a bidirectional thyristor structure, and a method for making the same. Due to the fact that at least part of the substrate is substituted with a material of a second conductivity type, thus forming a deep anode (22,22') or cathode (52), it is possible to produce a suppressor having a substrate which has an effective thickness that is less than the physical thickness of the slice. This allows for a good functioning suppressor which is unlikely to break during fabrication.
摘要翻译：本发明涉及一种改进的固态抑制器，如双向晶闸管结构及其制造方法。由于至少部分衬底被第二导电类型的材料取代，因此形成深阳极（22,22'）或阴极（52），所以可以制造具有衬底的抑制器，具有小于切片的物理厚度的有效厚度。这允许在制造过程中不太可能破裂的功能良好的抑制器。

20. 发明公开

EP0518790A1 Composant de protection bidirectionnel 失效
标题翻译： Bidirektionales Schutzunterteil。
公开(公告)号：EP0518790A1
公开(公告)日：1992-12-16
申请号：EP92420195.7
申请日：1992-06-09
申请人： SGS-THOMSON MICROELECTRONICS S.A.
发明人： Pezzani, Robert
IPC分类号： H02H9/04 , H01L29/86
CPC分类号： H02H9/04 , H01L29/87
摘要： La présente invention concerne un composant de protection bidirectionnel comprenant deux thyristors tête-bêche dont chacun est en anti-parallèle avec une diode, les gâchettes des deux thyristors étant interconnectées. Ce composant peut être réalisé sous forme monolithique et comprendre l'association de deux thyristors verticaux de même orientation et de deux diodes verticales de même orientation, opposée à celle des thyristors. Les régions semiconductrices constituant les thyristors (P3, N2, P1) sont communes à l'exception de leurs régions de cathode (N11, N12), ce composant comprenant trois métallisations : une métallisation de face arrière (M1) reliant les anodes communes des thyristors aux cathodes des diodes, une première métallisation de face avant (A1) reliant la cathode (N11) d'un thyristor à l'anode (P21) d'une diode, et une deuxième métallisation de face avant (A2) reliant la cathode (N12) de l'autre thyristor à l'anode (P22) de l'autre diode.
摘要翻译：本发明涉及一种双向保护部件，包括两个与二极管反平行的头 - 尾晶闸管，两个晶闸管的栅极相互连接。该部件可以以单片形式生产，并且包括具有相同取向的两个垂直晶闸管和具有与可控硅的方向相反的方向的两个垂直二极管的组合。构成晶闸管（P3，N2，P1）的半导体区域除了它们的阴极区域（N11，N12）之外是常见的，该部分包括三个金属化：将晶闸管的公共阳极连接到二极管的阴极，将一个晶闸管的阴极（N11）连接到一个二极管的阳极（P21）的第一正面金属化（A1）和连接另一个二极管的阴极（N12）的第二前面金属化（A2）晶闸管连接到另一个二极管的阳极（P22）。 ... ...... ...

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