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11. 发明授权

EP1237241B1 Semiconductor laser and method of manufacturing 有权
标题翻译：半导体激光器和制造方法
公开(公告)号：EP1237241B1
公开(公告)日：2005-04-27
申请号：EP02002704.1
申请日：2002-02-06
申请人： ANRITSU CORPORATION
发明人： Nagashima, Yasuaki , Shinone, Katsunori , Kikugawa, Tomoyuki
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2201 , H01S5/2205 , H01S5/2226 , H01S5/2275

12. 发明公开

EP1258064A2 HALBLEITERBAUELEMENT FÜR DIE EMISSION ELEKTROMAGNETISCHER STRAHLUNG UND VERFAHREN ZU DESSEN HERSTELLUNG 有权
标题翻译：方法的半导体元件的电磁辐射的发射
公开(公告)号：EP1258064A2
公开(公告)日：2002-11-20
申请号：EP01925294.9
申请日：2001-02-23
申请人： Osram Opto Semiconductors GmbH
发明人： LELL, Alfred , LUFT, Johann , HÄRLE, Volker , HAHN, Berthold
IPC分类号： H01S5/223 , H01S5/323
CPC分类号： H01S5/2232 , H01S5/2063 , H01S5/2205 , H01S5/2215 , H01S5/2216 , H01S5/223 , H01S5/32341
摘要： According to the invention, a semiconductor component is produced for the emission of electromagnetic radiation, in particular, light, which is characterised by comprising an active layer for production of radiation, a p contact, electrically connected to the active layer, an n contact, electrically connected to the active layer and a current limiting structure for the definition of a current path, whereby the current limiting structure is provided between the n contact and the active layer.

13. 发明公开

EP0828324A3 Semiconductor laser device 失效
公开(公告)号：EP0828324A3
公开(公告)日：2001-02-28
申请号：EP97306901.6
申请日：1997-09-05
申请人： SANYO ELECTRIC CO. LTD
发明人： Shono, Masayuki , Hiroyama, Ryoji , Komeda, Kouji , Nishida, Toyozo , Bessho, Yasuyuki
IPC分类号： H01S3/19 , H01S3/085 , G11B7/125
CPC分类号： H01S5/16 , B82Y20/00 , H01S3/22 , H01S5/168 , H01S5/2205 , H01S5/2206 , H01S5/2231 , H01S5/3202 , H01S5/34 , H01S5/3403 , H01S5/34326
摘要： A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom.

14. 发明公开

EP0898347A1 Vertical-cavity surface-emitting lasers with intra-cavity structures 失效
标题翻译：激光镭射激光器
公开(公告)号：EP0898347A1
公开(公告)日：1999-02-24
申请号：EP98115197.0
申请日：1993-05-06
申请人： Photonics Research Inc.
发明人： Jewell,Jack L. , Olbright,Gregory E.
IPC分类号： H01S3/19 , H01S3/085 , H01S3/025
CPC分类号： H01S5/18308 , H01S5/0421 , H01S5/0425 , H01S5/18316 , H01S5/18333 , H01S5/18341 , H01S5/18369 , H01S5/18394 , H01S5/2063 , H01S5/2205 , H01S5/2224 , H01S2301/166
摘要： Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM oo mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper and a lower mirror. The laser cavity comprises upper and lower spacer layers sandwiching an active region. A stratified electrode for conducting electrical current to the active region is disposed between the upper mirror and the upper spacer. The stratified electrode comprises a plurality of alternating high and low doped layers for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the conductivity of the annular surrounding regions. In another embodiment, a metal contact layer having an optical aperture is formed within the upper mirror of the VCSEL. The optical aperture blocks the optical field in such a manner that it eliminates higher transverse mode lasing.
摘要翻译：公开了具有各种腔内结构以实现低串联电阻，高功率效率和TEMoo模式辐射的垂直腔表面发射激光器（VCSEL）。在本发明的一个实施例中，VCSEL包括设置在上反射镜和下反射镜之间的激光腔。激光腔包括夹持有源区的上间隔层和下间隔层。用于将电流传导到有源区的分层电极设置在上反射镜和上间隔件之间。分层电极包括多个交替的高和低掺杂层，用于实现低串联电阻而不增加光吸收。 VCSEL还包括作为形成在分层电极中的用于抑制更高模式辐射的盘形区域的电流孔径。通过减小或消除环形周围区域的导电性来形成电流孔径。在另一个实施例中，在VCSEL的上反射镜内形成具有光学孔的金属接触层。光学孔径以这样的方式阻挡光场，从而消除较高的横模激光。

15. 发明公开

EP0663112A1 VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH INTRA-CAVITY STRUCTURES 失效
标题翻译：表面发射激光器VERTICAL谐振器的内部结构。
公开(公告)号：EP0663112A1
公开(公告)日：1995-07-19
申请号：EP93911113.0
申请日：1993-05-06
申请人： BANDGAP TECHNOLOGY CORPORATION
发明人： JEWELL, Jack, L. , OLBRIGHT, Gregory, R.
IPC分类号： H01S5
CPC分类号： H01S5/18308 , H01S5/0421 , H01S5/0425 , H01S5/18316 , H01S5/18333 , H01S5/18341 , H01S5/18369 , H01S5/18394 , H01S5/2063 , H01S5/2205 , H01S5/2224 , H01S2301/166
摘要： Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper mirror (70) and a lower mirror (20). The laser cavity comprises upper spacer (50) and lower spacer (30) layers sandwiching an active region (40). A stratified electrode (60) for conducting electrical current to the active region (40) is disposed between the upper mirror (70) and the upper spacer (50). The stratified electrode (60) comprises a plurality of alternating high and low doped layers (62, 63, 64) for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the conductivity of the annular surrounding region. In another embodiment, a metal contact layer having an optical aperture is formed within the upper mirror of the VCSEL. The optical aperture blocks the optical field in such a manner that it eliminates higher transverse mode lasing.

16. 发明公开

EP0650235A3 Semiconductor laser device 失效
标题翻译：半导体激光器件。
公开(公告)号：EP0650235A3
公开(公告)日：1995-05-03
申请号：EP94116557.3
申请日：1994-10-20
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kurihara, Haruki, c/o Intellectual Pty Div. , Matsuura, Hatsumi, c/o Intellectual Pty Div.
IPC分类号： H01S3/19
CPC分类号： H01S5/2231 , H01S5/2205 , H01S5/2219 , H01S5/2226 , H01S5/2227
摘要： According to a semiconductor laser device of the present invention, the thickness and carrier concentration of a current blocking layer (14) are set so as to cause a punch through on the current blocking layer (14) when the semiconductor laser device is driven at a current which is one to ten times as large as a maximum rated value of a DC driving current. Both a light absorbing layer (12) and a photocurrent blocking layer (13) are formed between the current blocking layer (14) and a second clad layer (3 to 6) in order to prevent a light turn-on phenomenon from occurring. The light absorbing layer (12) contacts the second clad layer (3 to 6) and is constituted of a semiconductor crystal of a p-type conductivity type, which is undoped or has a low concentration. The photocurrent blocking layer (13) contacts the current blocking layer (14) and is constituted of a semiconductor crystal of the p-type conductivity type. If the band gaps of the light absorbing layer (12), photocurrent blocking layer (13), and active layer (7) are represented by E ab , E ocb , and E ga , respectively, the following relationships are satisfied E ab ≦ E ga , E ocb > E ga .
摘要翻译：根据本发明的半导体激光装置，当电流阻挡层（14）被驱动时，电流阻挡层（14）的厚度和载流子浓度被设定为在电流阻挡层（14）上穿通，电流是直流驱动电流的最大额定值的1至10倍。为了防止发生光接通现象，在电流阻挡层（14）和第二覆盖层（3〜6）之间形成光吸收层（12）和光电流阻挡层（13）。光吸收层（12）与第二覆盖层（3〜6）接触，由p型导电型的半导体晶体构成，其为未掺杂的或具有低浓度的。光电流阻挡层（13）与电流阻挡层（14）接触，由p型导电型半导体晶体构成。如果光吸收层（12），光电流阻挡层（13）和有源层（7）的带隙分别由Eab，Eocb和Ega表示，则满足以下关系：E ab = Ega，Eocb > Ega。

17. 发明公开

EP0527547A3 Semiconductor laser device 失效
标题翻译：半导体激光装置
公开(公告)号：EP0527547A3
公开(公告)日：1993-03-10
申请号：EP92302420.2
申请日：1992-03-20
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Mihashi, Yutaka, c/o Mitsubishi Denki K.K.
IPC分类号： H01S3/19
CPC分类号： H01S5/227 , H01S5/0425 , H01S5/2205 , H01S5/2275
摘要： A semiconductor laser device has a current confinement structure of a thyristor structure (1,5,6,7) at both sides of an active region (3), and at least a p-n junction in the current confinement structure, to which a forward bias voltage is applied during laser operation, is short-circuited by a metal layer (11) or a low resistance material layer. Therefore, injection of holes from the p layer (7) into the n layer (6), which are short-circuited during the laser operation, is suppressed, whereby the current confinement structure is not likely to be turned on. In addition, the current practically flowing through the blocking layer is decreased. At a result, a current blocking effect is largely improved, preventing reduction in the laser output power and reduction in the linearity of light output vs. current characteristic.
摘要翻译：半导体激光器件在有源区（3）的两侧具有晶闸管结构（1,5,6,7）的电流限制结构，并且在电流限制结构中具有至少一个pn结，正向偏置在激光操作期间施加电压，被金属层（11）或低电阻材料层短路。因此，抑制了在激光器操作期间短路的从p层（7）到n层（6）的空穴注入，由此电流限制结构不可能导通。另外，实际流过阻挡层的电流减少。结果，电流阻塞效应大大提高，防止了激光输出功率的降低以及光输出对电流特性的线性降低。

18. 发明公开

EP0527547A2 Semiconductor laser device 失效
标题翻译： Halbleiterlaser。
公开(公告)号：EP0527547A2
公开(公告)日：1993-02-17
申请号：EP92302420.2
申请日：1992-03-20
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Mihashi, Yutaka, c/o Mitsubishi Denki K.K.
IPC分类号： H01S3/19
CPC分类号： H01S5/227 , H01S5/0425 , H01S5/2205 , H01S5/2275
摘要： A semiconductor laser device has a current confinement structure of a thyristor structure (1,5,6,7) at both sides of an active region (3), and at least a p-n junction in the current confinement structure, to which a forward bias voltage is applied during laser operation, is short-circuited by a metal layer (11) or a low resistance material layer. Therefore, injection of holes from the p layer (7) into the n layer (6), which are short-circuited during the laser operation, is suppressed, whereby the current confinement structure is not likely to be turned on. In addition, the current practically flowing through the blocking layer is decreased. At a result, a current blocking effect is largely improved, preventing reduction in the laser output power and reduction in the linearity of light output vs. current characteristic.
摘要翻译：半导体激光器件在有源区（3）的两侧具有晶闸管结构（1,5,6,7）的电流限制结构，以及电流限制结构中的至少pn结，正向偏置在激光操作期间施加电压，由金属层（11）或低电阻材料层短路。因此，抑制了在激光器操作期间短路的从p层（7）到n层（6）的空穴注入，由此电流限制结构不可能被接通。此外，实际上流过阻挡层的电流减小。结果，电流阻塞效应大大提高，防止激光输出功率的降低和光输出的线性与电流特性的降低。

19. 发明公开

EP0087253A1 Improvements in or relating to semi-conductor lasers 失效
标题翻译：半导体激光器或与之相关的改进
公开(公告)号：EP0087253A1
公开(公告)日：1983-08-31
申请号：EP83300717.2
申请日：1983-02-14
申请人： PLESSEY OVERSEAS LIMITED
发明人： Goodfellow, Robert Charles , Harding, Malcolm Edward
IPC分类号： H01S3/19
CPC分类号： H01S5/227 , H01S5/20 , H01S5/2059 , H01S5/2205 , H01S5/2227 , H01S5/2228 , H01S5/2275
摘要： In a semi-conductor laser of the buried active laser layer type, the laser layer is located between a layer of n-type material and a layer of p-type material, the sides of the active laser layer and at least a portion of the n-type layer and the p-type layer being covered with a plurality of thin layers with a doping sequence such that a large number of p-n junctions are included in the plurality of thin layers.
摘要翻译：在掩埋有源激光器层类型的半导体激光器中，激光器层位于n型材料层和p型材料层之间，激活激光器层的侧面以及激光器层的至少一部分 n型层和p型层以多个具有掺杂顺序的薄层覆盖，使得多个薄层中包括大量的pn结。

20. 发明公开

EP0086008A2 Semiconductor device for generating at least two radiation beams 失效
标题翻译： Halbleitervorrichtung zur Erzeugung von mindestens zwei Strahlen。
公开(公告)号：EP0086008A2
公开(公告)日：1983-08-17
申请号：EP83200122.6
申请日：1983-01-26
申请人： Philips Electronics N.V.
发明人： Tijburg, Rudolf Paulus , Van Dongen, Teunis
IPC分类号： H01S3/23
CPC分类号： H01S5/4043 , H01S5/0202 , H01S5/0217 , H01S5/2063 , H01S5/2205 , H01S5/4087
摘要： A semiconductor device for generating at least two radiation beams (1, 2) of preferably different frequency comprises a substrate (3) on which according to the invention at least one LED or laser is provided on each side by epitaxial growth. The radiation beams are preferably parallel to each other and are preferably generated by double hetero junction (DH) lasers.
Application in DRAW (Direct Read And Write) and in DOR (Direct Optical Recording) systems.
摘要翻译：用于产生优选不同频率的至少两个辐射束（1,2）的半导体器件包括衬底（3），根据本发明，在每个侧面上通过外延生长提供至少一个LED或激光器。辐射束优选地彼此平行，并且优选地由双异质结（DH）激光器产生。应用于DRAW（直接读写）和DOR（直接光记录）系统。

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