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11. 发明公开

EP2913424A1 Verfahren zum Ausbilden einer Edellmetallbeschichtung auf einem metallischen Substrat sowie Beschichtungsanordnung 审中-公开
标题翻译：金属基材和涂层排列上形成Edellmetallbeschichtung的方法
公开(公告)号：EP2913424A1
公开(公告)日：2015-09-02
申请号：EP14000722.0
申请日：2014-02-28
申请人： Aumann GMBH
发明人： Neddermann, Horst
IPC分类号： C23C18/42 , C23C18/54 , C23C26/00 , C23C22/02 , C23C18/08 , C23C18/16 , B05D7/20
CPC分类号： H01B1/02 , C23C18/02 , C23C18/08 , H01L24/43 , H01L24/745 , H01L2224/451 , H01L2224/45639 , H01L2924/181 , H01L2924/00
摘要： Ein Verfahren zum Ausbilden einer Edelmetallbeschichtung, vorzugsweise einer Silberbeschichtung, auf wenigstens einem Bereich eines metallischen Substrats, insbesondere eines metallischen Drahtes oder strangförmigen Gutes umfasst die folgenden Schritte:
- Vorglühen des zu beschichteten Bereichs des Substrats,
- Aufbringen einer Edelmetalllösung, vorzugsweise einer Silberlösung, auf den vorgeglühten Bereich des Substrats,
- Einbrennen der auf das Substrat aufgebrachten Edelmetalllösung,
- Abkühlen des mit der eingebrannten Edelmetalllösung beschichteten Substrats.
Dabei wird das mit der eingebrannten Edelmetalllösung beschichtete Substrat nach seiner Abkühlung nochmals erhitzt.
摘要翻译：一种用于形成贵金属涂布方法，优选的银涂层，在金属基板的至少一个区域，特别是金属线或绞合项，包括以下步骤： - 预热该基板的区域被涂覆， - 将贵金属溶液，优选银溶液，预热到基板的区域中， - 烘烤施加到基底上的贵金属溶液， - 冷却涂布有烘焙贵金属溶液中的底物。涂覆有烘焙贵金属溶液中的底物，然后再次加热，冷却后。

12. 发明公开

EP2768019A3 Copper bond wire and method of making the same 审中-公开
标题翻译：铜键合线及其制造方法
公开(公告)号：EP2768019A3
公开(公告)日：2014-10-29
申请号：EP13002674.3
申请日：2013-07-15
申请人： Heraeus Materials Singapore Pte. Ltd.
发明人： Sarangapani, Murali , Yeung, Ping Ha , Milke, Eugen
IPC分类号： H01L23/49 , C22C9/00
CPC分类号： H01L24/43 , C22C9/00 , C22C21/02 , C22C21/14 , C22F1/08 , H01B1/026 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/745 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/4321 , H01L2224/43848 , H01L2224/43985 , H01L2224/45014 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48824 , H01L2224/48844 , H01L2224/85205 , H01L2224/859 , H01L2924/00011 , H01L2924/12041 , H01L2924/14 , H01L2924/181 , H01L2924/20758 , H01L2924/00015 , H01L2924/01047 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/01028 , H01L2924/01046 , H01L2924/01079 , H01L2924/01078 , H01L2924/01024 , H01L2924/0102 , H01L2924/01058 , H01L2924/01012 , H01L2924/01057 , H01L2924/01013 , H01L2924/01005 , H01L2924/0104 , H01L2924/01022 , H01L2924/01015 , H01L2924/01016 , H01L2924/01026 , H01L2924/01025 , H01L2924/00014 , H01L2924/01204 , H01L2924/01203 , H01L2924/01029 , H01L2924/01014 , H01L2924/013 , H01L2924/00 , H01L2924/00013 , H01L2924/01201 , H01L2924/00012 , H01L2924/01033
摘要： The invention is related to a bonding wire, comprising a core with a surface, wherein the core comprises copper as a main component, wherein the core comprises copper as a main component, wherein an average size of crystal grains in the core is between 2.5 µm and 30 µm, and wherein a yield strength of the bonding wire is less than 120 MPa.
摘要翻译：本发明涉及一种键合线，包括具有表面的核心，其中核心包括铜作为主要成分，其中核心包括铜作为主要成分，其中核心中晶粒的平均尺寸在2.5μm 和30μm，并且其中接合线的屈服强度小于120MPa。

13. 发明公开

EP2779232A2 Semiconductor device with a chip bonded to a lead frame with a sintered Ag layer, wherein a resin fillet covers the sintered Ag layer and a part of a side surface of the chip and wherein chip electrodes are bonded to leads, as well as method of manufacturing the same 审中-公开
标题翻译：通过烧结Ag层的芯片，覆盖Ag的烧结层和芯片的侧表面的一部分的树脂喉部的装置与所连接到引线框架的半导体器件和所述芯片电极连接到连接导体，以及它们的制造方法
公开(公告)号：EP2779232A2
公开(公告)日：2014-09-17
申请号：EP14160005.6
申请日：2014-03-14
申请人： Renesas Electronics Corporation
发明人： Kajiwara, Ryoichi , Nakajo, Takuya , Arai, Katsuo , Yato, Yuichi , Oka, Hiroi , Hozoji, Hiroshi
IPC分类号： H01L23/488 , H01L23/49 , H01L21/60 , H01L23/31 , H01L23/495
CPC分类号： H01L23/49 , H01L21/50 , H01L23/293 , H01L23/295 , H01L23/3107 , H01L23/3192 , H01L23/49513 , H01L23/4952 , H01L23/49562 , H01L23/49582 , H01L23/562 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L29/1608 , H01L29/2003 , H01L2224/0381 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05552 , H01L2224/05553 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/0603 , H01L2224/291 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/29144 , H01L2224/29294 , H01L2224/29439 , H01L2224/2949 , H01L2224/3011 , H01L2224/3201 , H01L2224/32013 , H01L2224/32058 , H01L2224/32059 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45147 , H01L2224/45155 , H01L2224/45565 , H01L2224/45616 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48247 , H01L2224/48472 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48755 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48855 , H01L2224/48997 , H01L2224/4903 , H01L2224/49111 , H01L2224/73265 , H01L2224/83055 , H01L2224/83192 , H01L2224/83194 , H01L2224/83439 , H01L2224/83801 , H01L2224/8384 , H01L2224/8392 , H01L2224/83951 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2224/85455 , H01L2224/8592 , H01L2224/85951 , H01L2224/92 , H01L2224/92247 , H01L2924/00011 , H01L2924/10272 , H01L2924/15747 , H01L2924/181 , H01L2924/3512 , H01L2924/00014 , H01L2924/06 , H01L2924/00012 , H01L2224/85 , H01L2224/83 , H01L2924/01013 , H01L2924/01051 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/014 , H01L2924/00 , H01L2224/83205
摘要： A semiconductor device (20, 24, 29, 32, 35, 38) includes a die pad (6), a wide gap semiconductor chip (SiC or GaN) (1) mounted on the die pad (6), a porous first sintered Ag layer (16) bonding the die pad (6) and the chip (1), and a reinforcing resin portion (17) covering a surface of the first sintered Ag layer (16) and a part of a side surface of the chip (1) and formed in a fillet shape. The semiconductor device (20, 24, 29, 32, 35, 38) further includes electrodes (1g, 1h, 2, 3, 4) on its main (1a) and back (1b) surfaces, the electrodes (1g, 1h, 2, 3, 4) being electrically connected to leads (7, 9, 11, 39), wherein the electrical connection at the front side is a wire (18, 19, 25, 26) connection and the electrical connection at the back side is the first sintered Ag layer (16). A porous second sintered Ag layer (36) or a second resin portion (30) reinforces the wire bonding portion on the electrode (1g, 2, 3). The semiconductor device (20, 24, 29, 32, 35, 38) further includes a sealing body (third resin) (14) which covers the chip (1), the first sintered Ag layer (16), and a part of the die pad (6).
摘要翻译：一种半导体器件（20，24，29，32，35，38）包括一个垫（6），一个宽带隙半导体芯片（SiC或GaN）的安装在所述管芯焊盘（6）（1），多孔第一烧结 Ag层（16）粘合在管芯焊盘（6）和所述芯片（1），和一个增强树脂部（17），其覆盖所述第一烧结Ag层（16）的表面和芯片的侧表面的一部分（ 1）和形成为圆角形状。的半导体器件（20，24，29，32，35，38）还包括电极（1G，1H，2，3，4）在其主（1a）和背面（1b）中的表面，所述电极（1G，1H， 2，3，4）被电连接到引线（7，9，11，39），其中，在所述前侧的电连接是电线（18，19，25，26）连接，并且在所述背面上的电连接是第一烧结Ag层（16）。多孔烧结第二Ag层（36）或第二树脂部分（30）迫使纯粹在电极上的引线键合部分（1克，2，3）。的半导体器件（20，24，29，32，35，38）还包括一个密封体（第三树脂）（14），其覆盖所述芯片（1），所述第一烧结Ag层（16），和的一个部分垫（6）。

14. 发明公开

EP2221861A4 SEMICONDUCTOR DEVICE BONDING WIRE AND WIRE BONDING METHOD 审中-公开
标题翻译： HALBLEITERBAUELEMENTE-BONDDRAHT UND DRAHTBONDVERFAHREN
公开(公告)号：EP2221861A4
公开(公告)日：2012-06-20
申请号：EP08791508
申请日：2008-07-24
申请人： NIPPON STEEL MATERIALS CO LTD , NIPPON MICROMETAL CORP
发明人： UNO TOMOHIRO , KIMURA KEIICHI , TERASHIMA SHINICHI , YAMADA TAKASHI , NISHIBAYASHI AKIHITO
IPC分类号： H01L21/60 , H01B5/02 , H01L23/49
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43847 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/4568 , H01L2224/45684 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48472 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48724 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78251 , H01L2224/78301 , H01L2224/85045 , H01L2224/85048 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15747 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/3025 , H01L2924/3861 , H01L2924/01001 , H01L2924/01203 , H01L2924/01034 , H01L2924/01081 , H01L2924/20645 , H01L2924/20652 , H01L2924/20653 , H01L2924/00014 , H01L2924/20108 , H01L2224/45657 , H01L2224/45666 , H01L2924/01008 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2076 , H01L2924/2065 , H01L2924/20651 , H01L2924/20654 , H01L2924/00 , H01L2224/45124 , H01L2924/013 , H01L2924/20751 , H01L2924/2075 , H01L2924/00013 , H01L2924/01049
摘要： It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition.. The outer layer is 0.021 to 0.12µm in thickness.
摘要翻译：本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄用于细间距连接。接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同外层的厚度为0.021〜0.12μm。

15. 发明公开

EP2200076A4 BONDING WIRE FOR SEMICONDUCTOR DEVICES 有权转让
标题翻译： VERBINDUNGSDRAHTFÜRHALBLEITERBAUELEMENTE
公开(公告)号：EP2200076A4
公开(公告)日：2012-06-06
申请号：EP08858289
申请日：2008-12-02
申请人： NIPPON STEEL MATERIALS CO LTD , NIPPON MICROMETAL CORP
发明人： UNO TOMOHIRO , KIMURA KEIICHI , YAMADA TAKASHI
IPC分类号： H01L23/49 , C22C5/02 , C22C5/04 , C22C5/06 , C22C9/00 , H01L21/48
CPC分类号： C22C5/04 , B23K35/0222 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/851 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3011 , H01L2924/3025 , H01L2924/3861 , H01L2924/01028 , H01L2924/01046 , H01L2924/01004 , H01L2924/0102 , H01L2924/01078 , H01L2924/01005 , H01L2924/01015 , H01L2924/01083 , H01L2924/01014 , H01L2924/01029 , H01L2924/20652 , H01L2924/20656 , H01L2924/20754 , H01L2924/20755 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00014 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/0104 , H01L2924/01007 , H01L2924/01018 , H01L2924/01001 , H01L2924/20658 , H01L2924/20654 , H01L2224/48824 , H01L2924/00 , H01L2924/013 , H01L2924/00013 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006
摘要： It is an object of the present invention to provide a highly-functional bonding wire which has good wire-surface nature, loop linearity, stability of loop heights, and stability of a wire bonding shape, and which can cope with semiconductor packaging technologies, such as thinning, achievement of a fine pitch, achievement of a long span, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.
摘要翻译：本发明的目的是提供一种具有良好的线表面性质，环线性，环高度稳定性和引线接合形状的稳定性的高功能性接合线，并且可以应对半导体封装技术，例如细化，实现细节，实现长距离，立体包装。半导体器件接合线包括由导电金属形成的芯部件和主要由与芯部件不同的面心立方金属形成的表皮层。在表皮层表面的长度方向的结晶取向的<100>取向的百分比大于或等于50％。

16. 发明公开

EP1925037A1 LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：EP1925037A1
公开(公告)日：2008-05-28
申请号：EP06798073.0
申请日：2006-09-12
申请人： SHOWA DENKO KABUSHIKI KAISHA
发明人： YASUDA, Takaki, SHOWA DENKO K.K.
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L24/43 , H01L24/45 , H01L33/60 , H01L2224/43 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45624 , H01L2224/45639 , H01L2224/45673 , H01L2224/4809 , H01L2224/48091 , H01L2224/48227 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01016 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10336 , H01L2924/10349 , H01L2924/12041 , H01L2924/181 , H01L2924/2076 , H01L2924/00014 , H01L2924/01004 , H01L2924/00011 , H01L2924/00 , H01L2924/00012
摘要： A light-emitting device is provided in a light-emitting element with a bonding wire that is a fine metallic wire formed mainly of gold or copper and coated at least partly with a substance capable of heightening a reflection coefficient of a wavelength of light emitted from the light-emitting element.
摘要翻译：发光装置通过作为主要由金或铜形成的精细金属线的接合线提供，并且至少部分地涂覆有能够提高从发射的光的波长的反射系数的物质发光元件。

17. 发明授权

EP0924320B1 Method of fabricating a copper plated aluminium wire 有权
标题翻译： Verfahren zur Herstellung eines verkupferten铝Drahts
公开(公告)号：EP0924320B1
公开(公告)日：2005-06-29
申请号：EP98308393.2
申请日：1998-10-14
申请人： Totoku Electric Co., Ltd.
发明人： Kitazawa, Hiroshi , Yamaguchi, Tatsuo , Tsukada, Etsuro
IPC分类号： C25D5/44 , C25D5/10 , C25D5/50
CPC分类号： H01L24/45 , C25D5/10 , C25D5/44 , C25D5/50 , H01L24/43 , H01L2224/43 , H01L2224/431 , H01L2224/45015 , H01L2224/45118 , H01L2224/45124 , H01L2224/45573 , H01L2224/45574 , H01L2224/45601 , H01L2224/45618 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/4566 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , Y10T29/49117 , H01L2924/0132 , H01L2924/01201 , H01L2924/01026 , H01L2924/01025 , H01L2924/01024 , H01L2924/01022 , H01L2924/013 , H01L2924/00 , H01L2224/48 , H01L2924/0002
摘要： A copper plated aluminum wire improved in the adhesion is fabricated by a method which comprises a zinc displacement step of forming a zinc thin layer by zinc displacement on the surface of an aluminum or aluminum alloy conductor, an electroplating step of coating the surface of the zinc thin layer continuously with copper layers by electroplating to have a copper coated aluminum conductor, and a thermal diffusion step of heat treating the copper coated aluminum conductor at a temperature of 120 DEG C to 600 DEG C under an inert gas atmosphere for thermal diffusion to ease the electrodeposition stress. Accordingly, the resultant copper plated aluminum wire can easily be shaped by cold plastic working process, decreased in the diameter at higher efficiency, and improved in the power of adhesion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating, a low thermally conductive metal layer by electroplating, and a high electrically conductive metal layer by electroplating which all are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight and prevented from disconnection caused by thermal diffusion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating and a high electrically conductive metal layer by electroplating which both are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight. A composite light-weighted plated wire is provided having an electrically conductive metal layer, which has a potential equal to or higher than that of zinc, deposited by electroplating on the outer surface of a zinc anchor metal layer provided on an aluminum conductor, said electroplating carried out under a condition that the concentration of hydrogen ion in an electrolyte solution is higher than 4 (pH) as an electrolysis parameter and the thickness of plating x (micrometer) is 0.2
摘要翻译：通过包括在铝或铝合金导体的表面上通过锌置换形成锌薄层的锌置换步骤的方法制造提高粘合力的镀铜铝线，镀锌表面的电镀步骤通过电镀连续地涂覆铜层以具有铜涂覆的铝导体，以及在惰性气体气氛下在120℃至600℃的温度下热处理镀铜的铝导体以进行热扩散的热扩散步骤以便于放热电沉积应力。因此，所得到的镀铜铝线可以通过冷塑性加工工艺容易地成型，直径减小，效率更高，附着力提高。提供一种电镀铝线，其包括通过移位电镀的锚金属层，通过电镀的低导热金属层，以及通过电镀的高导电金属层，其全部按照顺序沉积在外表面上的铝或铝合金导体。因此，所得到的电镀铝线或绝缘电镀铝线可以在整体重量上最小化并防止由热扩散引起的断开。提供一种电镀铝线，其包括通过移位电镀的锚金属层和通过电镀的高导电金属层，两者都以一个顺序沉积在外表面上的铝或铝合金导体。因此，所得到的电镀铝线或绝缘电镀铝线可以在整体重量上最小化。提供一种具有导电金属层的复合轻量化电镀线，该导电金属层具有等于或高于通过电镀沉积在锌导体上的锌锚金属层外表面上的锌的电位，所述电镀在电解质溶液中的氢离子的浓度高于作为电解参数的4（pH）和镀层厚度x（微米））为0.2

18. 发明公开

EP3167482A1 PROCESS FOR MANUFACTURING OF A THICK COPPER WIRE FOR BONDING APPLICATIONS 有权
标题翻译：制造用于粘结应用的厚铜线的方法
公开(公告)号：EP3167482A1
公开(公告)日：2017-05-17
申请号：EP15721617.7
申请日：2015-04-28
申请人： Heraeus Deutschland GmbH & Co. KG
发明人： MILKE, Eugen , AINOUZ, Larbi , PRENOSIL, Peter
IPC分类号： H01L23/49 , C22C9/00 , C22F1/08 , H01B1/02
CPC分类号： H01B13/0006 , B21C1/02 , C22C9/00 , C22F1/008 , C22F1/08 , C23C30/005 , H01B1/026 , H01B13/0016 , H01B13/0036 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/4312 , H01L2224/4321 , H01L2224/4382 , H01L2224/43847 , H01L2224/43848 , H01L2224/45014 , H01L2224/45015 , H01L2224/45016 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/85065 , H01L2224/85075 , H01L2924/00011 , H01L2924/12041 , H01L2924/14 , H01L2924/181 , H01L2924/00014 , H01L2924/00015 , H01L2924/20759 , H01L2924/2076 , H01L2924/01201 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/01001 , H01L2924/01007 , H01L2924/01046 , H01L2924/01047 , H01L2924/01005 , H01L2924/013 , H01L2924/00013 , H01L2924/00012 , H01L2924/01015 , H01L2924/01033 , H01L2924/00
摘要： A process for manufacturing a bonding wire containing a core having a surface. The core contains ≧98.0% copper and has a cross sectional area of 75,00 to 600,000 μm2 and an elastic limit RP0.2 (yield strength) of 40 to 95 N/mm2. The process involves (a) providing a copper core precursor; (b) drawing the precursor until a final diameter of the wire core is reached; and (c) annealing the drawn wire at a minimum annealing temperature of 650 to 1000° C. through its entire cross section for a minimum annealing time of 4 seconds to 2 hours.
摘要翻译：一种用于制造包括具有表面的芯的键合线的方法，其中芯包含≥98.0％的铜且横截面积在7500至600000μm2范围内，并且弹性极限RP0.2（屈服强度）为该范围为40至95N / mm 2，该方法包括以下步骤：a）提供铜芯前体; b）拉伸前体直至达到线芯的最终直径; c）在650-1000℃范围内的最小退火温度下通过其整个横截面对退火丝进行退火，退火时间最短为4秒至2小时。

19. 发明授权

EP2948574B1 VERFAHREN ZUM AUSBILDEN EINER EDELMETALLBESCHICHTUNG AUF EINEM METALLISCHEN SUBSTRAT 有权
公开(公告)号：EP2948574B1
公开(公告)日：2016-09-21
申请号：EP15709091.1
申请日：2015-02-27
申请人： Aumann GmbH
发明人： NEDDERMANN, Horst
IPC分类号： C23C18/42 , C23C18/54 , C23C18/16 , C23C18/08 , C23C26/00 , B05D7/20
CPC分类号： H01B1/02 , C23C18/02 , C23C18/08 , H01L24/43 , H01L24/745 , H01L2224/451 , H01L2224/45639 , H01L2924/181 , H01L2924/00

20. 发明公开

EP2948575A1 COATED WIRE FOR BONDING APPLICATIONS 审中-公开
标题翻译： BESCHICHTETER DRAHTFÜRVERBINDUNGSANWENDUNGEN
公开(公告)号：EP2948575A1
公开(公告)日：2015-12-02
申请号：EP13811489.7
申请日：2013-12-18
申请人： Heraeus Deutschland GmbH & Co. KG
发明人： MILKE, Eugen , SCHARF, Jürgen
IPC分类号： C23C26/00 , C23C18/08 , C23C30/00 , C23C14/00 , C23C16/00 , H01L21/00
CPC分类号： B23K20/007 , B23K20/10 , B23K35/0261 , B23K35/0272 , B23K35/30 , B23K35/3006 , B23K35/302 , B23K35/322 , B23K35/40 , B23K35/404 , B23K2201/42 , C23C14/14 , C23C18/08 , C23C28/00 , C23C30/00 , C25D5/34 , C25D7/0607 , H01B1/026 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/745 , H01L24/78 , H01L24/85 , H01L2224/05624 , H01L2224/43125 , H01L2224/432 , H01L2224/4321 , H01L2224/435 , H01L2224/43823 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45015 , H01L2224/45139 , H01L2224/45147 , H01L2224/4556 , H01L2224/45565 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45663 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45678 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48455 , H01L2224/48465 , H01L2224/48472 , H01L2224/48824 , H01L2224/85181 , H01L2224/85801 , H01L2924/00011 , H01L2924/01076 , H01L2924/12044 , H01L2924/181 , H05K1/09 , H05K3/34 , H05K2201/10287 , H05K2203/049 , Y10T428/12875 , Y10T428/12889 , H01L2924/00014 , H01L2924/00 , H01L2924/20109 , H01L2924/2011 , H01L2924/01046 , H01L2924/01006 , H01L2924/01001 , H01L2924/01008 , H01L2924/01007 , H01L2924/01204 , H01L2924/013 , H01L2924/20751 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20752 , H01L2924/01014 , H01L2924/01029 , H01L2924/00013 , H01L2924/00012 , H01L2924/01049 , H01L2924/01005 , H01L2924/01004 , H01L2924/01033
摘要： The invention is related to a bonding wire, comprising a core with a surface, wherein the core comprises a core main component selected from the group consisting of copper and silver; and a coating layer which is at least partially superimposed over the surface of the core, wherein the coating layer comprises a coating component selected from the group palladium, platinum, gold, rhodium, ruthenium, osmium and iridium as a component in an amount of at least 10%; characterized in that the coating layer comprises the main component of the core as a component in an amount of at least 10%.
摘要翻译：本发明涉及一种接合线，其包含具有表面的芯和至少部分地叠置在芯的表面上的涂层。核心包含选自铜和银的核心主要成分。涂层含有至少10％量的选自钯，铂，金，铑，钌，锇和铱的涂层组分，并且还含有至少10％的核心主要组分。

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