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11. 发明公开

EP2432012A1 HEAT EXCHANGER, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE HEAT EXCHANGER, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：换热器，半导体器件制造方法交换机和方法制作半导体器件，
公开(公告)号：EP2432012A1
公开(公告)日：2012-03-21
申请号：EP09844591.9
申请日：2009-05-11
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： MORINO Masahiro , TAKETSUNA Yasuji , KAKIUCHI Eisaku , TAKANO Yuya
IPC分类号： H01L23/473 , H05K7/20
CPC分类号： H01L23/473 , H01L21/4882 , H01L2924/0002 , H05K7/20509 , H05K7/20918 , Y10T29/4935 , Y10T29/49375 , Y10T29/49384 , Y10T29/49393 , H01L2924/00
摘要： Disclosed is a heat exchanger wherein warping (bending) of an intervening member and a frame is suppressed when the intervening member and a wall portion of the frame member having different linear expansion coefficients are welded with each other. A method for manufacturing the heat exchanger, a semiconductor device wherein warping (bending) of an intervening member and a frame is suppressed, and a method for manufacturing the semiconductor device are also disclosed. Specifically disclosed is a heat exchanger (10) wherein a fin member (20) provided with a plurality of fins (22) forming flow channels (25) for a refrigerant is arranged within a frame (30) which forms the outer casing. The frame (30) has a first frame member (31) (a first wall portion) to which insulating plates (60) (intervening members) interposed between the frame (30) and heat-generating bodies (semiconductor elements (71-74)) are welded. The insulating plates (60) (intervening members) have a linear expansion coefficient different from that of the frame (30). The first frame member (31) is provided with elastically deformable projections (31b-31e) (elastically deformable portions) along an arrangement surface (31 g) of the outer surface (31f) on which the insulating plates (60) (intervening members) are arranged.
摘要翻译：本发明提供一种热交换器worin翘曲居间构件的（弯曲）和被抑制的帧时的中间构件和具有不同线膨胀系数的框架构件的壁部中与海誓山盟焊接。一种用于制造热交换器的方法，介入构件的半导体装置worin翘曲（弯曲）和一帧被抑制，且对于该半导体装置的制造方法是这样游离缺失盘。游离缺失具体盘是worin形成流动通道用于制冷剂带有翅片的多个（22）上的鳍状件（20）（25）的框架（30），其形成在该外壳内布置在热交换器（10）。所述框架（30）具有第一框架构件（31）（第一壁部）到哪个绝缘板（60）（中间部件）的框架（30）和发热体（半导体元件（71-74之间））被焊接。绝缘板（60）（中间部件）具有的线性膨胀系数不同从帧所做的（30）。所述第一框架构件（31）设置有可弹性变形突起（31B-31E）（弹性变形部）沿着在所述外表面的配置面（31g）中（31F），其上的绝缘板（60）（中间部件）布置有。

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