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11. 发明公开

EP0218119A3 Superconductor switching device 失效
标题翻译：超导体开关装置
公开(公告)号：EP0218119A3
公开(公告)日：1990-02-14
申请号：EP86112662.1
申请日：1986-09-12
申请人： International Business Machines Corporation
发明人： Gallagher, William Joseph , Raider, Stanley Irwin
IPC分类号： H01L39/22 , H01L39/16
CPC分类号： H01L39/228 , H01L39/18
摘要： A switch is provided that introduces quasiparticles at an asymmetric location into a reduced cross-sectional area microbridge link (4) that is part of an output path. The quasiparticles nucleate a small region of normal resistivity and the normal region propagates to produce normal resistivity in the entire reduced cross-sectional area microbridge link (4). The asymmetry of the location provides input-output isolation. The high critical current, high resistivity material for the reduced cross-section member (4) provides high current and voltage gain and the small size provides high speed. In one structure, an input film conductor (5) is asymmetrically, centrally positioned in an insulator stack, and a microbridge link (4) is positioned on a bevelled side of the stack with the input conductor (5) in tunnelling relationship with part of the narrow portion of the microbridge link (4). Decoupling between input and output sufficient to permit one switch to drive several others is provided. Voltage gain can be sufficient to serve as an interface between superconducting devices and semiconductor circuitry.

12. 发明公开

EP0936623A3 Magnetic tunnel junction devices 有权
标题翻译：磁性隧道结元件
公开(公告)号：EP0936623A3
公开(公告)日：2000-09-20
申请号：EP99300847.3
申请日：1999-02-04
申请人： International Business Machines Corporation
发明人： Abraham, David William , Gallagher, William Joseph , Trouilloud, Philip Louis
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： H01L27/224 , G11C11/15 , G11C11/16
摘要： Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.

13. 发明公开

EP0936623A2 Magnetic tunnel junction devices 有权
标题翻译：磁隧道结设备
公开(公告)号：EP0936623A2
公开(公告)日：1999-08-18
申请号：EP99300847.3
申请日：1999-02-04
申请人： International Business Machines Corporation
发明人： Abraham, David William , Gallagher, William Joseph , Trouilloud, Philip Louis
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： H01L27/224 , G11C11/15 , G11C11/16
摘要： Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.
摘要翻译：磁存储器单元包括具有磁轴的可变磁区，沿着该磁轴可以施加两个磁化方向，从而提供两个相应的状态，单元根据施加于其上的电和所得磁激励可以改变其中的两个状态。公开了在写入状态时施加到单元的磁性刺激的不对称性提供了从第一方向到第二方向的可预测的磁化模式演变。还公开了电池的布局和/或磁化中的物理不对称性，其提供可预测的图案演变。这些原理可以应用于磁性随机存取存储器（MRAM）阵列，该磁性随机存取存储器阵列在位线和字线的交叉处采用磁性隧道结（MTJ）单元，其提供电和合成磁激励以将单元写入其中。

14. 发明公开

EP0936622A2 Magnetic memory devices having multiple magnetic tunnel junctions therein 有权
标题翻译： Magnetische Speicheranordnungen mit einer Vielzahl magnetischer Tunnelverbindungen
公开(公告)号：EP0936622A2
公开(公告)日：1999-08-18
申请号：EP99300384.7
申请日：1999-01-20
申请人： International Business Machines Corporation
发明人： Abraham, David William , Gallagher, William Joseph , Trouilloud, Philip Louis
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： H01L27/224 , B82Y10/00 , G11C11/15 , G11C11/16 , G11C29/74
摘要： Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array. Only the cell at an intersecting region selected by stimuli applied via each of the first and second electrically conductive lines forming the selected region is written, and other cells along the first and second electrically conductive lines forming the selected region are not written. An operating window of applied electrical and therefore magnetic stimuli can be defined to ensure cell selectivity across the memory array.
摘要翻译：公开了磁记忆装置，其中多个磁性隧道结可一起写入平均状态。例如，公开了磁性随机存取存储器（“MRAM”）阵列，其具有跨越阵列的相互多个交叉的第一和第二导电线形成多个相交区域。阵列包括多个磁存储单元，每个磁存储单元设置在多个交叉区域中的相应一个。根据根据通过相应的第一和第二导线施加到其上的电和合成的磁刺激，每个电池包括至少两个磁性隧道结，可一起写入平均状态。在每个磁存储单元中提供的至少两个磁隧道结为整个阵列上的所有电池提供可预测的磁响应。写入通过形成所选区域的第一导电线和第二导电线中的每一个施加的刺激而选择的相交区域上的单元，并且不写入沿着形成所选区域的第一导电线和第二导电线的其他单元。可以定义施加的电和因此的磁刺激的操作窗口以确保存储器阵列中的单元选择性。

15. 发明公开

EP0699922A2 Method to improve performance of a superconducting magnetometer in a magnetic field 失效
标题翻译：埃菲尔铁矿公司的Verrahren zur Leistungsverbesserung von einem Supraleitendenmagnetometer
公开(公告)号：EP0699922A2
公开(公告)日：1996-03-06
申请号：EP95108601.6
申请日：1995-06-06
申请人： International Business Machines Corporation
发明人： Gallagher, William Joseph , Koch, Roger Hilsen , Sun, Jonathan Zanhong
IPC分类号： G01R33/035
CPC分类号： G01R33/0358
摘要： The present invention significantly decreases the low frequency noise in the circuits (5) of superconducting quantum interference devices (SQUIDS) after exposure to applied magnetic fields while in the superconducting state by the inclusion of a weak link (25) in the superconducting flux sensing (pickup) loop (20) of the SQUID.
摘要翻译：本发明通过在超导通量感测中包含弱连接（25），在超导状态下暴露于施加的磁场之后，显着降低超导量子干涉装置（SQUIDS）的电路（5）中的低频噪声（拾取）循环（20）。

16. 发明公开

EP0454939A2 Oriented superconductors for AC power transmission 失效
标题翻译： Orientierte Supraleiter zur AC-Leistungsübertragung。
公开(公告)号：EP0454939A2
公开(公告)日：1991-11-06
申请号：EP91100308.5
申请日：1991-01-11
申请人： International Business Machines Corporation
发明人： Gallagher, William Joseph , Worthington, Thomas Kimber
IPC分类号： H01L39/14 , H01L39/24
CPC分类号： H01L39/143
摘要： A superconductive transmission line (20) is formed of mixed metallic oxide ceramic material, particularly Y₁Ba₂Cu₃O 7-x drawn epitaxially upon a substrate (76). The superconductive material has basal crystallographic planes (44) in alignment with copper oxide of the ceramic material. The planes (44) are parallel to the substrate (72). The transmission line (20) is constructed of a plurality of electrically conductive elements (38, 40, 56, 60), each of which is formed of the superconductive material. The conductive elements (38, 40, 56, 60) are arranged with the basal crystalline planes (44) parallel to an axis (46, 72) of the transmission line, along which axis power is to flow. Thereby, magnetic fields (48) induced by currents flowing in the conductive elements (38, 40, 56, 60) intersect the conductive elements (38, 40, 56, 60) perpendicularly to the basal crystallographic planes (44) to maximize the current which can flow while retaining linearity between magnetization and applied magnetic field. Thereby, alternating current can be transmitted by the transmission line without the introduction of hysteresis losses which would develop heat and quench the superconducting characteristic of the transmission line (20).
摘要翻译：超导传输线（20）由混合的金属氧化物陶瓷材料形成，特别是在衬底（76）上外延绘制的Y1Ba2Cu3O7-x。超导材料具有与陶瓷材料的氧化铜对准的基本结晶平面（44）。平面（44）平行于衬底（72）。传输线（20）由多个由超导材料形成的导电元件（38,40,56,60）构成。导电元件（38,40,56,60）被布置成具有平行于传输线的轴线（46,72）的基本晶体平面（44），沿着该轴线的轴线功率流动。因此，在导电元件（38,40,56,60）中流动的电流引起的磁场（48）垂直于基底结晶面（44）与导电元件（38,40,56,60）相交，以使电流最大化其可以在保持磁化和施加的磁场之间的线性的同时流动。因此，可以通过传输线传输交流电流，而不引入将产生热并猝灭传输线（20）的超导特性的磁滞损耗。

17. 发明公开

EP0292436A3 High current conductors and high field magnets using anisotropic superconductors 失效
标题翻译：高电流导体和高场磁铁使用异相超导体
公开(公告)号：EP0292436A3
公开(公告)日：1990-11-28
申请号：EP88810313.2
申请日：1988-05-13
申请人： International Business Machines Corporation
发明人： Davidson, Arthur , Dinger, Timothy Rea , Gallagher, William Joseph , Worthington, Thomas Kimber
IPC分类号： H01L39/12 , H01F5/08
CPC分类号： H01F6/06 , H01L39/143
摘要： Improved conductors and superconducting magnets are described utilizing superconducting materials exhibiting critical field anisotropy. This anisotropy is one in which the ability of the superconductor to stay in a superconducting state depends on the orientation of a magnetic field applied to the superconductor with respect to the direction of current flow in the superconductor. This anisotropy is utilized in the design of conductors and magnet windings comprising the superconductive material and specifically is directed to magnetic windings (14) in which the direction of high critical current through the superconductor is parallel to the magnetic field (H) produced by current in these windings (14) in order to obtain high critical fields. Particularly favorable examples of a superconducting material are the so-called high - T c superconductors in which the primary supercurrent flow is confined to two-dimensional Cu-O planes. By arranging the superconductive windings (14) so that the Cu-O planes are substantially parallel to the magnetic field produced by current in these windings (14), the windings (14) will be able to withstand high fields without being driven normal. This maximizes the magnetic field amplitudes that can be produced by the magnet.

18. 发明公开

EP0345441A2 High-Tc superconductor-gallate crystal structures 失效
标题翻译：高-Tc超导体 - 没食子酸酯晶体结构
公开(公告)号：EP0345441A2
公开(公告)日：1989-12-13
申请号：EP89106765.4
申请日：1989-04-15
申请人： International Business Machines Corporation
发明人： Gallagher, William Joseph , Giess, Edward August , Gupta, Arunava , Laibowitz, Robert Benjamin , O'Sullivan, Eugene John M. , Sandstrom, Robert Lee
IPC分类号： H01L39/24
CPC分类号： H01P3/085 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/143 , H01L39/2458 , H01L39/247 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/704 , Y10T29/49014
摘要： High-T c oxide superconductive structures (22, 24) can be formed on gallate layers (18, 20), where the gallate layers (18, 20) include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. 'The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high-T c superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.
摘要翻译：可以在镓酸盐层（18,20）上形成高Tc氧化物超导结构（22,24），其中镓酸盐层（18,20）包括稀土元素或稀土类元素。也可以使用稀土元素和稀土元素的组合。 '超导膜可以外延沉积在这些没食子酸酯层上，形成单晶，或者在最低限度上，高度定向的超导层。可以使用任何高Tc超导氧化物材料，但最好的晶格匹配是包括氧化铜在内的超导材料。例子包括Y-Ba-Cu-O系统，基于Bi的系统和基于T1的系统。

19. 发明公开

EP0292436A2 High current conductors and high field magnets using anisotropic superconductors 失效
标题翻译： Leiter mit Hhem Strom und Hochfeldmagnete mit anisotropischen Supraleitern。
公开(公告)号：EP0292436A2
公开(公告)日：1988-11-23
申请号：EP88810313.2
申请日：1988-05-13
申请人： International Business Machines Corporation
发明人： Davidson, Arthur , Dinger, Timothy Rea , Gallagher, William Joseph , Worthington, Thomas Kimber
IPC分类号： H01L39/12 , H01F5/08
CPC分类号： H01F6/06 , H01L39/143
摘要： Improved conductors and superconducting magnets are described utilizing superconducting materials exhibiting critical field anisotropy. This anisotropy is one in which the ability of the superconductor to stay in a superconducting state depends on the orientation of a magnetic field applied to the superconductor with respect to the direction of current flow in the superconductor. This anisotropy is utilized in the design of conductors and magnet windings comprising the superconductive material and specifically is directed to magnetic windings (14) in which the direction of high critical current through the superconductor is parallel to the magnetic field (H) produced by current in these windings (14) in order to obtain high critical fields. Particularly favorable examples of a superconducting material are the so-called high - T c superconductors in which the primary supercurrent flow is confined to two-dimensional Cu-O planes. By arranging the superconductive windings (14) so that the Cu-O planes are substantially parallel to the magnetic field produced by current in these windings (14), the windings (14) will be able to withstand high fields without being driven normal. This maximizes the magnetic field amplitudes that can be produced by the magnet.
摘要翻译：使用具有临界场各向异性的超导材料来描述改进的导体和超导磁体。这种各向异性是其中超导体保持在超导状态的能力取决于相对于超导体中的电流方向施加到超导体的磁场的取向。这种各向异性被用于包括超导材料的导体和磁体绕组的设计中，并且具体地涉及磁绕组（14），其中通过超导体的高临界电流的方向平行于由电流产生的磁场（H）这些绕组（14）为了获得高临界场。超导材料的特别有利的实例是所谓的高Tc超导体，其中初级超流动被限制在二维Cu-O平面上。通过布置超导绕组（14）使得Cu-O平面基本上平行于这些绕组（14）中的电流产生的磁场，绕组（14）将能够承受高场而不被驱动正常。这使得可以由磁体产生的磁场振幅最大化。

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