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101. 发明授权

EP0794613B1 Low noise-high linearity HEMT-HBT composite 失效
标题翻译：时噪声小和大的线性HEMT-HBT晶体管组合
公开(公告)号：EP0794613B1
公开(公告)日：2001-08-16
申请号：EP97100525.1
申请日：1997-01-15
申请人： TRW INC.
发明人： Kobayashi, Kevin Wesley , Streit, Dwight Christopher , Oki, Aaron Kenji , Umemoto, Donald Katsu
IPC分类号： H03F3/193
CPC分类号： H03F3/211 , H03F1/32 , H03F3/1935 , H03F3/3455 , H03F2200/294 , H03F2200/372

102. 发明公开

EP0766378A3 Low distortion amplifier 失效
标题翻译：放大器具有低失真
公开(公告)号：EP0766378A3
公开(公告)日：1999-05-19
申请号：EP96306730.1
申请日：1996-09-17
申请人： AT&T Corp.
发明人： Gans, Michael James , Yeh, Yu Shuan
IPC分类号： H03F1/32
CPC分类号： H03F1/3258 , H03F1/3276 , H03F2200/294 , H03F2200/372
摘要： Disclosed is a low distortion amplifier circuit (10) of the predistortion type that employs a cuber circuit (14) in the predistortion path to provide optimized signal energy (S2) at third order intermodulation frequencies, which cancels IMD products generated by the main power amplifier (20). The cuber circuit employs a pair of anti-parallel diodes that are biased with at least one D.C. source to produce a D.C. current flow through each diode. The input signal applied to the cuber circuit produces signal current flow in each diode to enable a third order output current (S1) to be extracted. A desired amount of third order power is thereby provided to realize minimal IMD power in the main amplifier output over a wide dynamic range of the input signal. Using a circuit analysis based on a power series approach, circuit parameters of the cuber circuit can be optimized to provide a desired amount of cancellation of third order IMD products in the main amplifier, without generating excessive higher order power, over an optimized dynamic range of the input signal.

103. 发明公开

EP0883241A1 Bias voltage controlled parallel active components 失效
标题翻译： Vorspannungsgesteuerte平行木偶Komponenten
公开(公告)号：EP0883241A1
公开(公告)日：1998-12-09
申请号：EP98660044.3
申请日：1998-05-15
申请人： NOKIA MOBILE PHONES LTD.
发明人： Järvinen, Esko , Varis, Jukka
IPC分类号： H03F3/72 , H03F3/62 , H04B1/48
CPC分类号： H03F3/62 , H03F1/302 , H03F3/72 , H03F2200/294 , H03F2200/372 , H04B1/48
摘要： The course of an oscillating signal is controlled in mutually alternative first active component (31) and second active component (32), both of which can be set into active state by a certain first value of a control signal brought to the component and which are in inactive state with a certain second value of the control signal. The signal is directed to pass through the first active component (31) by setting it into active state by a control signal (33) brought to it. At the same time, the second active component (32) is prevented from affecting the course of the signal by setting a control signal brought to it to a second value (107, 111).
摘要翻译：振荡信号的过程在相互替代的第一有源分量（31）和第二有源分量（32）中被控制，它们都可以通过提供给组件的控制信号的某个第一值而被设置为有效状态，处于非活动状态，具有控制信号的某个第二值。该信号被引导通过第一有源部件（31）通过其被带到其的控制信号（33）而被设置为有效状态。同时，通过将其中提供的控制信号设置为第二值（107,111）来防止第二有源部件（32）影响信号的进程。

104. 发明公开

EP0795956A4 POWER AMPLIFIER AND COMMUNICATION DEVICE 失效
标题翻译：电源转换器和通信设备
公开(公告)号：EP0795956A4
公开(公告)日：1998-12-09
申请号：EP96931987
申请日：1996-09-25
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NISHIJIMA MASAAKI , KUNIHISA TAKETO , ISHIKAWA OSAMU
IPC分类号： H03F1/14 , H03F3/60 , H03F3/68 , H03F3/72
CPC分类号： H03F3/68 , H03F3/602 , H03F3/72 , H03F2200/294 , H03F2200/372 , H03F2203/7215 , H03F2203/7221 , H03F2203/7231 , H03F2203/7233 , H03F2203/7236
摘要： A power amplifier is provided with a first amplifier PA2 having an input terminal and an output terminal, a passive circuit PC3 having an input terminal and an output terminal, and a first switch having a single-pole terminal and two multi-throw terminals. One of the multi-throw terminals of the switch SW2 is connected to the input terminal of the first amplifier PA201 and the other multi-throw terminal of the switch SW2 is connected to the input terminal of the passive circuit PC3. Therefore, a power amplifier and a communication device which operate at different frequencies, output power, or modulating systems are provided.

105. 发明公开

EP0850509A1 LINEARIZED DIGITAL AUTOMATIC GAIN CONTROL 失效
标题翻译：线性数字自动增益控制
公开(公告)号：EP0850509A1
公开(公告)日：1998-07-01
申请号：EP96933039.0
申请日：1996-09-16
申请人： QUALCOMM INCORPORATED
发明人： WILSON, Nathaniel, B.
IPC分类号： H03G3 , H03F1
CPC分类号： H03G3/3042 , H03F1/3241 , H03F2200/294 , H03F2200/372
摘要： The present invention provides linear, digital automatic gain control (AGC) in a radio. A received signal is demodulated to provide I and Q digital baseband signals. A received signal strength indication is determined from these signals and the resulting digital signal is adjusted to provide a logarithmic response (205). This signal is then integrated (210) to provide a digital receive AGC adjust signal. For the transmit AGC adjust, the digital receive AGC adjust signal is filtered (215) and then summed (270) with a scaled (260) closed loop power control command (265). The closed loop power control commands (265) are ignored (220) if they would result in increasing the transmit gain beyond the amplifier's designed maximum output. The outputs of the transmit and receive AGC amplifiers are linearized by transmit and receive linearizers, (225) and (240) respectively, which pre-distort the digital AGC adjust signals prior to digital to analog conversion (230) and (245).

106. 发明公开

EP0833442A1 High frequency noise and impedance matched integrated circuits 失效
标题翻译： Rausch- und Impedanzangepasste integrierte Hochfrequenzschaltkreise
公开(公告)号：EP0833442A1
公开(公告)日：1998-04-01
申请号：EP97307266.3
申请日：1997-09-18
申请人： NORTHERN TELECOM LIMITED
发明人： Voinigescu, Sorin P. , Maliepaard, Michael C.
IPC分类号： H03F1/56 , H03F1/26
CPC分类号： H03F1/22 , H03F1/26 , H03F1/565 , H03F3/189 , H03F2200/294 , H03F2200/372 , H03F2200/489 , H03F2200/492
摘要： An monolithic integrated circuit comprising a transistor-inductor structure is provided having simultaneously noise matched and input impedance matched characteristics at a desired frequency. The transistor-inductor structure comprises a first transistor Q 1 which may be a common emitter bipolar transistor or common source MOSFET transistor Q 1 , a second optional transistor Q 2 , a first inductor L E in the emitter (source) of Q 1 , and a second inductor L B in the base (gate) of Q1. The emitter length l E1 , or correspondingly the gate width w g , of Q1 is designed such that the real part of its optimum noise impedance is equal to the characteristic impedance of the system, Z 0 , which is typically 50Ω. The first inductor L E , provides matching of the real part of the input impedance and the second inductor L B cancels out the noise reactance and input impedance reactance of the structure. The resulting simultaneously noise and impedance matched integrated circuit provides optimal performance. The optimized transistor-inductor structure has particular application to silicon integrated circuits, such as low noise amplifiers and mixer circuits, for wireless and RF circuit applications at 5.8 Ghz, previously reported only for GaAs based circuits. Other basic silicon integrated circuits were optimized at frequencies up to ~12 GHz.
摘要翻译：提供了包括晶体管 - 电感器结构的单片集成电路，其具有期望频率的同时噪声匹配和输入阻抗匹配特性。晶体管 - 电感器结构包括第一晶体管Q1，其可以是公共发射极双极晶体管或公共源MOSFET晶体管Q1，第二可选晶体管Q2，Q1的发射极（源极）中的第一电感器LE和第二电感器LB Q1的基极（门）。 Q1的发射极长度lE1或相应的栅极宽度wg被设计成使得其最佳噪声阻抗的实部等于系统的特性阻抗Z0，通常为50欧姆。第一电感器LE提供输入阻抗的实部与第二电感器LB的匹配，消除了结构的噪声电抗和输入阻抗电抗。所产生的同时噪声和阻抗匹配集成电路提供最佳性能。优化的晶体管 - 电感器结构特别适用于5.8Ghz的无线和RF电路应用的硅集成电路，例如低噪声放大器和混频器电路，以前仅针对基于GaAs的电路。其他基本硅集成电路在频率高达12 GHz的频率下进行了优化。

107. 发明公开

EP0794613A1 Low noise-high linearity HEMT-HBT composite 失效
标题翻译： HEMT-HBT-Transistorkombination mit kleinemGeräuschund grosserLinearität
公开(公告)号：EP0794613A1
公开(公告)日：1997-09-10
申请号：EP97100525.1
申请日：1997-01-15
申请人： TRW INC.
发明人： Kobayashi, Kevin Wesley , Streit, Dwight Christopher , Oki, Aaron Kenji , Umemoto, Donald Katsu
IPC分类号： H03F3/193
CPC分类号： H03F3/211 , H03F1/32 , H03F3/1935 , H03F3/3455 , H03F2200/294 , H03F2200/372
摘要： 4-terminal HEMT-HBT composite devices, based upon monolithically integrated HEMT-HBT technology and configured in various topologies, are useful in a wide range of applications which currently utilize discrete MMICs. In particular, the 4-terminal topologies are easily configured as 3-terminal composite devices useful in various 2-port and 3-port MMIC circuit applications, such as low noise-high linearity amplifiers as well as mixers, which provide the benefits of a reduction in size, as well as corresponding cost while providing better performance than utilizing either HEMT or HBT devices individually.
摘要翻译：基于单片集成HEMT-HBT技术并配置在各种拓扑中的4端子HEMT-HBT复合器件在目前使用分立MMIC的广泛应用中非常有用。特别地，4端子拓扑结构容易配置为可用于各种2端口和3端口MMIC电路应用中的3端复合器件，例如低噪声高线性放大器以及混频器，其提供了一个减小尺寸，以及相应的成本，同时提供比单独使用HEMT或HBT设备更好的性能。

108. 发明公开

EP0785617A2 Low noise-low distortion HEMT low noise amplifier (LNA) with monolithic tunable HBT active feedback 失效
标题翻译： Rausch- und verzerrungsarmer HEMT-Verstärkermit Batterischer einstellbarer HBT-aktiverRückkopplung
公开(公告)号：EP0785617A2
公开(公告)日：1997-07-23
申请号：EP96120178.7
申请日：1996-12-16
申请人： TRW INC.
发明人： Kobayashi, Kevin W.
IPC分类号： H03F1/34
CPC分类号： H03F1/48 , H03F1/26 , H03F1/34 , H03F2200/294 , H03F2200/372
摘要： A low noise amplifier (LNA), formed as a monolithic microwave integrated circuit (MMIC), includes a high-electron mobility transistor (HEMT) and utilizes tunable heterojunction bipolar transistor (HBT) active feedback to improve the amplifier's gain-bandwidth and linearity performance and to provide for self-biasing of the HEMT. In addition to enhancing the self-biasing, the MMIC, in accordance with the present invention, allows the frequency bandwidth and linearity characteristics of the LNA to be adjusted after the MMIC LNA has been fabricated without significantly degrading the noise figure performance.
摘要翻译：形成为单片微波集成电路（MMIC）的低噪声放大器（LNA）包括高电子迁移率晶体管（HEMT），并利用可调谐异质结双极晶体管（HBT）有源反馈来改善放大器的增益带宽和线性度并提供HEMT的自我偏见。除了增强自偏压之外，根据本发明，MMIC还允许在制造MMIC LNA之后调节LNA的频率带宽和线性特性，而不会使噪声系数性能显着降低。

109. 发明授权

EP0488160B1 Multistage amplifier 失效
标题翻译：多级放大器
公开(公告)号：EP0488160B1
公开(公告)日：1996-02-07
申请号：EP91120174.7
申请日：1991-11-26
申请人： Sumitomo Electric Industries, Ltd.
发明人： Shiga, Nobuo, c/o Yokohama Works
IPC分类号： H03F3/60 , H01L23/48
CPC分类号： H03F3/604 , H01L23/481 , H01L2924/0002 , H01L2924/3011 , H03F2200/294 , H01L2924/00

110. 发明授权

EP0532575B1 APPARATUS FOR DETECTING FAILURE OF AN ANTENNA AMPLIFIER UNIT WITH A HOT STANDBY REDUNDANCY 失效
标题翻译：设备FOR AN天线放大器与RESERVE循环冗余故障检测功能。
公开(公告)号：EP0532575B1
公开(公告)日：1995-10-11
申请号：EP91910384.6
申请日：1991-06-06
申请人： NOKIA TELECOMMUNICATIONS OY
发明人： SAVUSALO, Juha
IPC分类号： H03F3/68 , H04B1/74
CPC分类号： H03F1/526 , H03F2200/294 , H04B1/0466 , H04B1/0483
摘要： The invention relates to an apparatus for detecting failure of an antenna amplifier unit (1), replicated on the hot standby principle, in a receiving unit (2) positioned apart from an antenna (3), the receiving unit comprising power supply means (20) for supplying operating voltage to the antenna amplifier unit through an antenna cable (4). To transmit information on the failure of the amplifier to the receiving unit, the apparatus of the invention is characterized in that the antenna amplifier unit (1) comprises control means (10) responsive to a failure of an amplifier for disconnecting an amplifier (LNA1, LNA2) from the supply of operating voltage, and that the power supply means (20) are capable of detecting a change in power consumption resulting from the disconnection of the amplifier from the supply of operating voltage and thereby the failure of the amplifier (LNA1, LNA2).

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