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    • 92. 发明公开
    • Non-volatile memory
    • 非易失性存储器
    • EP1227496A1
    • 2002-07-31
    • EP01300399.1
    • 2001-01-17
    • CAVENDISH KINETICS LIMITED
    • Smith, Charles
    • G11C11/34G11B9/08G11B5/00
    • B82Y10/00G11B5/00G11B9/08G11B9/1409G11B9/1418
    • The present invention seeks to provide a non-volatile memory device which has an increased density of storage elements formed thereon.
      A non-volatile memory device comprises a substrate (2) supporting an array of field efect transistor devices. A plate is movable with respect to the substrate supporting an array of insulated charge storing elements (6) each having gate-forming metal plates (7) adjacent thereto. There is also means (12) for moving the plate with respect to the substrate such that, in use, the plate can be moved to position different charge storing elements over one of the array of field effect transistors so that each field effect transistor is able to determine the charge stored on more than one element. A corresponding magnetic effect device is also provided.
    • 本发明试图提供一种非易失性存储器件,其具有增加的形成于其上的存储元件的密度。 非易失性存储器件包括支撑场效应晶体管器件阵列的衬底(2)。 板可相对于支撑绝缘电荷存储元件(6)阵列的基板移动,每个绝缘电荷存储元件具有与其相邻的栅极形成金属板(7)。 还有用于相对于衬底移动板的装置(12),使得在使用中,可以移动板以将不同的电荷存储元件定位在场效应晶体管阵列中的一个之上,使得每个场效应晶体管能够 以确定存储在多个元素上的电荷。 还提供了相应的磁效应装置。
    • 94. 发明公开
    • RECORDING MEDIUM, INFORMATION REPRODUCING DEVICE, INFORMATION RECORDING DEVICE, AND INFORMATION RECORDING/REPRODUCING DEVICE
    • AUFZEICHNUNGSMEDIUM,INFORMATIONSWIEDERGABE- UND -AUFNAHMEVORRICHTUNG SOWIE INFORMATIONSAUFNAHME - / - WIEDERGABEVORRICHTUNG
    • EP0840308A4
    • 1999-07-14
    • EP96924155
    • 1996-07-19
    • SONY CORP
    • HAGIWARA YOSHIAKI
    • G01Q30/04G11B9/08G11B9/10G11B11/08G11B23/00G11B23/03G11B33/14G11B11/05
    • G11B23/0021G11B9/08G11B9/10G11B11/08G11B23/0316G11B33/14
    • A disk (1) is constituted of a substrate (11), an aluminum signal layer (12) in which pits (14) are made, and a protective plate (13). An information reproducing device reproduces information from the disk (1) by means of a reproducing circuit (5) by convergently emitting an electron beam (E) from an electron gun (40) and detecting the variation of the intensity of the reflection of the beam (E) with a detector (42). A recording medium (20) is constituted of a conductive layer (22), an insulating layer (23), and an island-like fixed electrode (24) formed on the layer (23) and electrically insulated from its periphery. The fixed electrode (24) has a memory function. To write information on the medium (20), electrons are implanted into the electrode (24) with an electron gun (40). To erase all the information at a time, a voltage is applied across the conductive layer (22). To read out information, the electrostatic effect between the fixed electrode (24) and its counter electrode is utilized. Therefore, the information recording capacity of the medium (20) is increased and the information reading accuracy from the medium (20) is improved.
    • 盘(1)由衬底(11),制成凹坑(14)的铝信号层(12)和保护板(13)构成。 信息再现装置通过从电子枪(40)会聚地发射电子束(E)的再现电路(5)从盘(1)再现信息,并且检测光束的反射强度的变化 (E)与检测器(42)。 记录介质(20)由导电层(22),绝缘层(23)和形成在层(23)上并与其周边电绝缘的岛状固定电极(24)构成。 固定电极(24)具有记忆功能。 为了在介质(20)上写入信息,用电子胶(40)将电子注入到电极(24)中。 为了一次擦除所有信息,跨越导电层(22)施加电压。 为了读出信息,利用了固定电极(24)与其对置电极之间的静电效应。 因此,介质(20)的信息记录容量增加,并且来自介质(20)的信息读取精度提高。
    • 98. 发明授权
    • METHOD AND APPARATUS FOR STORING DIGITAL INFORMATION IN THE FORM OF STORED CHARGES
    • 方法和设备存贮对装药的形式数值信息
    • EP0560757B1
    • 1996-12-18
    • EP90911112.2
    • 1990-06-14
    • THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
    • QUATE, Calvin, F.BARRETT, Robert, C.
    • G11B9/00G11B9/08
    • G11B9/08B82Y10/00G11B9/14G11B9/1445G11B9/1472Y10S977/947
    • Method and apparatus (10) for storing digital information in a dense memory structure. A semiconductor substrate (12) has a thin insulating layer (14) formed thereon. Over the thin insulating layer (14) is formed a dielectric charge-storage layer (16). A piezoelectric bimorph cantilever arm (30) has a tip (32) formed at its free end to access certain memory sites defined by charge-storage regions (40, 42, 44) in the charge-storage layer (16). To write information in the form of charges into a memory site tip (32) contacts or is in close proximity to the surface of the charge-storage layer (16) and an electric field is applied between the tip (32) and the substrate (12) to induce charges to tunnel through the thin insulating layer (14) into the charge-storage layer (16) where the charges are stored as trapped charges. Information is read from a storage-site by spacing the tip (32) of the cantilever arm (30) a distance (d) from the surface of the charge storage layer (16) and applying an electric field between the tip (32) and the substrate (12). The capacitive force on the tip (32) is then measured to determine the amount of charge stored in that memory site. Alternatively charge is deposited directly on the surface of a single insulating layer. Charge sites are arranged in circular tracks on a rotating substrate (52) to provide a high density memory array (50). Charge sites are also arranged in linear tracks by forming alternating layers of conductive (62) and non-conductive (64) substrate layers over which are formed thin insulating layers (68) and charge-storage layers (70). This produces a number of spaced-apart charge-storage tracks. Tracks are also provided by depositing metal strips (70) or scribing grooves (80) on the surface of a device.