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91. 发明授权

EP1520300B1 LOW TEMPERATURE, BUMP-BONDED RADIATION IMAGING DEVICE 有权
标题翻译：与HÖCKER-BOND连接低温辐射图像记录装置
公开(公告)号：EP1520300B1
公开(公告)日：2008-07-09
申请号：EP03712573.9
申请日：2003-03-12
申请人： Oy Ajat Ltd.
发明人： VUORELA, Mikko, Ilmari
IPC分类号： H01L27/146
CPC分类号： H01L27/14661 , H01L27/14634 , H01L27/14636
摘要： An x-ray and gamma-ray radiant energy imaging device is disclosed having a temperature sensitive semiconductor detector substrate bump-bonded to a semiconductor CMOS readout substrate. The temperature sensitive, semiconductor detector substrate utilizes Tellurium compound materials, such as CdTe and CdZnTe. The bump bonds are formed of a low-temperature, lead-free binary solder alloy having a melting point between about 100 °C and about 180 °C. Also described is a process for forming solder bumps utilizing the low-temperature, lead-free binary solder alloy, to prevent damage to temperature sensitive and potentially brittle detector substrate when assembling the imaging device.

92. 发明公开

EP1926979A2 RADIATION SENSOR DEVICE AND METHOD 审中-公开
标题翻译：辐射传感器设备和方法
公开(公告)号：EP1926979A2
公开(公告)日：2008-06-04
申请号：EP06803925.4
申请日：2006-09-20
申请人： Analog Devices, Inc.
发明人： KIERSE, Oliver , HYNES, Eamon
IPC分类号： G01J5/00
CPC分类号： H01L27/1446 , G01J5/041 , G01J5/045 , G01J5/0884 , H01L27/14618 , H01L27/14634 , H01L31/0203 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： An improved radiation sensor device includes a cap attached to an integrated circuit chip which has a radiation sensor on a surface with a cap spaced from and covering the radiation sensor; the cap and integrated circuit chip with radiation sensor are encapsulated in an encapsulant with a transparent portion of at least one of the cap and integrated circuit chip proximate the radiation sensor being exposed at the boundary of the encapsulant.

93. 发明公开

EP1900031A1 SEPARATION TYPE UNIT PIXEL OF 3-DIMENSIONAL IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权转让
标题翻译：用于制造三维图像传感器和过程分离型单位像素
公开(公告)号：EP1900031A1
公开(公告)日：2008-03-19
申请号：EP06769059.4
申请日：2006-06-27
申请人： SiliconFile Technologies Inc.
发明人： LEE, Do Young 402-1002 Hansol-Apt
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/1469
摘要： A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer. Accordingly, manufacturing processes can be simplified by constructing the upper wafer using only a photodiode and the lower wafer using the pixel array region except the photodiode, and costs are reduced since transistors are not included in the upper wafer portion, which in turn cannot affect the interaction with light.

94. 发明公开

EP1869706A1 SEPARATION TYPE UNIT PIXEL HAVING 3D STRUCTURE FOR IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权转让
标题翻译：随着3D结构的分离模板单元的用于生产图像传感器和过程PIXEL
公开(公告)号：EP1869706A1
公开(公告)日：2007-12-26
申请号：EP06747321.5
申请日：2006-03-29
申请人： SiliconFile Technologies Inc.
发明人： LEE, Do Young
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14621 , H01L27/14625 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L27/14689
摘要： A separation type unit pixel of an image sensor, which can handle light that incidents onto a photodiode at various angles, and provides a zoom function in a mini camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The separation type unit pixel having a 3D structure for an image sensor, composed of a plurality of transistors, includes: a first wafer which includes a photodiode, a transfer transistor, a node of a floating diffusion area functioning as static electricity for converting electric charge into a voltage, and a pad connecting the floating diffusion area and the transfer transistor to an external circuit, respectively; a second wafer which includes the rest of the circuit elements constituting a pixel (i.e., a reset transistor, a source-follower transistor, and a blocking switch transistor), a read-out circuit, a vertical/horizontal decoder, a correlated double sampling (CDS) circuit which involves in a sensor operation and an image quality, an analog circuit, an analog-digital converter (ADC), a digital circuit, and a pad connecting each pixel; and a connecting means which connects the pad of the first wafer and the pad of the second wafer. Accordingly, by forming an area for a photodiode and an area for a pixel almost the same, an image sensor can be manufactured to have a good sensitivity, without having to use a micro lens. In addition, by disposing the photodiode at the top layer, an incident angle margin of incident light can be secured, which has to be basically provided by the sensor for its auto focusing function or zoom function.

95. 发明公开

EP1838088A1 IMAGE PICKUP DEVICE AND IMAGE PICKUP RESULT PROCESSING METHOD 审中-公开
标题翻译： BILDERFASSUNGSEIIRUNG UND BILDERFASSUNGSERGEBNIS-VERARBEITUNGSVERFAHREN
公开(公告)号：EP1838088A1
公开(公告)日：2007-09-26
申请号：EP05814419.7
申请日：2005-12-02
申请人： Sony Corporation
发明人： KOBAYASHI, Seiji c/o SONY CORPORATION
IPC分类号： H04N5/335 , H04N5/235
CPC分类号： H04N5/351 , H01L27/14607 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H04N5/145 , H04N5/232 , H04N5/23248 , H04N5/23251 , H04N5/23254 , H04N5/2351 , H04N5/2352 , H04N5/2353 , H04N5/345 , H04N5/379
摘要： The present invention is applied to an image pickup apparatus for which, for example, a CMOS solid-state image pickup element is used. One screen image is divided into a plurality of blocks, and a motion is detected for each of the blocks to control the exposure time of the block.
摘要翻译：本发明应用于例如使用CMOS固态图像拾取元件的图像拾取装置。一个屏幕图像被分成多个块，并且针对每个块检测运动以控制块的曝光时间。

96. 发明公开

EP1835539A3 Photodiode array, method of manufacturing the same, and radiation detector 有权
标题翻译： Photodiodenarray，Herstellungsverfahrendafürund Strahlungsdetektor
公开(公告)号：EP1835539A3
公开(公告)日：2007-09-26
申请号：EP07013166.9
申请日：2003-08-07
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Shibayama, Katsumi
IPC分类号： H01L27/14 , G01T1/20 , H04N5/32
CPC分类号： H01L31/103 , H01L27/1446 , H01L27/14634 , H01L27/1464 , H01L27/14643 , H01L31/02363 , H01L2224/11 , Y02E10/50
摘要： A back illuminated photodiode array (201) with a semiconductor substrate (203) has a light-incident surface side and an opposite side surface; said light incident surface includes a plurality of recessed parts (211) and a plurality of frame parts (213) surrounding said recessed parts (211), said frame parts (213) forming a lattice form as viewed from the direction of incidence of light; pn junctions (204) are formed at a side opposite the light incident surface and these pn junctions (204) are located at the opposite side surface in respective regions corresponding to the recessed parts (211); a separation layer (207) is formed at a side opposite the light incident surface; said separation layer (207) is located in regions that correspond to respective frame parts (213) and electrically separate photodiodes each formed by said pn junction (204). Bump electrodes (217,219) are formed at the opposite side surface and do not overlap said separation layer (207).
摘要翻译：在光电二极管阵列1中，通过从入射面侧变薄而形成的入射面侧凹部7以阵列的形式排列，并且通过使区域变薄形成的相对的表面侧凹部11对应于从相对于光入射面的相对面侧形成有光入射面侧凹部7的排列形式。由pn结3形成在相对表面侧凹部11的底部，pn结型光电二极管以阵列形式排列。

97. 发明公开

EP1628348A4 PHOTO-DETECTION DEVICE 审中-公开
标题翻译： PHOTODETEKTIONSVORRICHTUNG
公开(公告)号：EP1628348A4
公开(公告)日：2007-07-18
申请号：EP04734404
申请日：2004-05-21
申请人： HAMAMATSU PHOTONICS KK
发明人： SUZUKI YASUHIRO , MIZUNO SEIICHIRO
IPC分类号： H01L27/146 , H01L31/02 , H04N5/374
CPC分类号： H01L27/14636 , H01L23/481 , H01L27/14634 , H01L27/14638 , H01L27/14661 , H01L2224/0401 , H01L2224/05554 , H01L2224/0557 , H01L2224/16238 , H01L2924/0002 , Y10T307/773 , H01L2224/05552
摘要： A photo-detection device includes: a first substrate on which M x N photodiodes and switches are arranged; a second substrate on which signal processing sections are arranged for processing an output signal of the respective photodiodes; and a third substrate arranged between the first and the second substrate. The third substrate has a first surface opposing to the first substrate and a second surface opposing to the second substrate. On the first surface of the third substrate, M common wires are arranged for electrically connecting the photodiodes to the signal processing sections. On the second surface of the third substrate, bonding pads respectively connected to the common wires are arranged. Each of the photodiodes on the first substrate is electrically connected to each of the common wires on the third substrate via a first bump while each of the signal processing sections on the second substrate is electrically connected to each of the bonding pads on the third substrate via a second bump.

98. 发明公开

EP1786027A2 Plasma etching of tapered structures 审中-公开
标题翻译： Plasma-Àtzenvon konischen Strukturen
公开(公告)号：EP1786027A2
公开(公告)日：2007-05-16
申请号：EP06008902.6
申请日：2006-04-28
申请人： Schott AG
发明人： Ngo, Ha-Duong , Seidemann, Volker, Dr. , Studzinski, Daniel , Lange, Martin , Hiess, André
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L27/14609 , H01L27/14634 , H01L27/14806
摘要： The invention relates to a method of plasma etching substrates, in particular of etching tapered passages through substrates, using a process gas comprising at least one halogenide and oxygen.
摘要翻译：本发明涉及一种等离子体蚀刻衬底的方法，特别是使用包括至少一种卤化物和氧气的工艺气体蚀刻通过衬底的锥形通道。

99. 发明公开

EP1782475A1 TWO COLOUR PHOTON DETECTOR 审中-公开
标题翻译：双色光子探测器
公开(公告)号：EP1782475A1
公开(公告)日：2007-05-09
申请号：EP05748859.5
申请日：2005-06-07
申请人： BAE Systems PLC
发明人： JONES, Christopher Laurence BAE SYSTEMS Avionics , HIPWOOD, Leslie George BAE SYSTEMS Avionics , KNOWLES, Peter BAE SYSTEMS Avionics , MAXEY, Christopher David BAE SYSTEMS Avionics , ORDISH, Michael Allen BAE SYSTEMS Avionics
IPC分类号： H01L27/146
CPC分类号： H01L31/02162 , H01L27/14634 , H01L27/14647 , H01L27/14652 , H01L31/0352
摘要： A two-colour radiation detector (2) comprises a mesa-type multi-layered mercury-cadmium-telluride detector structure monolithically integrated on a substrate (6). The detector (2) is responsive to two discrete wavelength ranges separated by a wavelength range to which the detector (2) is not responsive.

100. 发明公开

EP1492168A4 SENSOR 有权
标题翻译：传感器
公开(公告)号：EP1492168A4
公开(公告)日：2007-03-28
申请号：EP03708524
申请日：2003-03-10
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIBAYAMA KATSUMI
IPC分类号： H01L27/146 , G01T1/20 , H01L27/14 , H01L27/144 , H01L31/09
CPC分类号： H01L27/14636 , G01T1/2018 , H01L27/14618 , H01L27/14634 , H01L27/1464 , H01L27/14661 , H01L27/14663 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05023 , H01L2224/05024 , H01L2224/05025 , H01L2224/05568 , H01L2224/16225 , H01L2924/15192
摘要： The sensor (D) includes a semiconductor chip, provided with photodiodes (PD) and output terminals (T), and a circuit board (C) with input terminals (I), such that the input terminals and output terminals are connected. The sensor also has a signal reading circuit (A) outside the input terminal formation region of the circuit board, for making dimensions of the circuit board smaller than the dimensions of the semiconductor chip.
摘要翻译：半导体芯片（S）设置有光学传感元件的光电二极管（PD）和输出端子（T）。电路板（C）设有用于接收来自半导体芯片（S）的输出端子（T）的信号的输入端子（I）。连接装置（CM）将端子（T）连接到相应的输入端子（I）。输入端子（I）之间的间隔小于输出端子（T）之间的间隔。该传感器在电路基板（C）的输入端子形成区域（RI）的外侧具有信号读取电路（A），电路基板（C）的尺寸比半导体芯片（S）小，。因此，当排列传感器（D）时，半导体芯片（S）彼此靠近或接触地设置，由此抑制传感器连接部分的分辨率降低。

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