专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明公开

EP1869706A1 SEPARATION TYPE UNIT PIXEL HAVING 3D STRUCTURE FOR IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：随着3D结构的分离模板单元的用于生产图像传感器和过程PIXEL
公开(公告)号：EP1869706A1
公开(公告)日：2007-12-26
申请号：EP06747321.5
申请日：2006-03-29
申请人： SiliconFile Technologies Inc.
发明人： LEE, Do Young
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14621 , H01L27/14625 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L27/14689
摘要： A separation type unit pixel of an image sensor, which can handle light that incidents onto a photodiode at various angles, and provides a zoom function in a mini camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The separation type unit pixel having a 3D structure for an image sensor, composed of a plurality of transistors, includes: a first wafer which includes a photodiode, a transfer transistor, a node of a floating diffusion area functioning as static electricity for converting electric charge into a voltage, and a pad connecting the floating diffusion area and the transfer transistor to an external circuit, respectively; a second wafer which includes the rest of the circuit elements constituting a pixel (i.e., a reset transistor, a source-follower transistor, and a blocking switch transistor), a read-out circuit, a vertical/horizontal decoder, a correlated double sampling (CDS) circuit which involves in a sensor operation and an image quality, an analog circuit, an analog-digital converter (ADC), a digital circuit, and a pad connecting each pixel; and a connecting means which connects the pad of the first wafer and the pad of the second wafer. Accordingly, by forming an area for a photodiode and an area for a pixel almost the same, an image sensor can be manufactured to have a good sensitivity, without having to use a micro lens. In addition, by disposing the photodiode at the top layer, an incident angle margin of incident light can be secured, which has to be basically provided by the sensor for its auto focusing function or zoom function.

92. 发明公开

EP1838088A1 IMAGE PICKUP DEVICE AND IMAGE PICKUP RESULT PROCESSING METHOD 审中-公开
标题翻译： BILDERFASSUNGSEIIRUNG UND BILDERFASSUNGSERGEBNIS-VERARBEITUNGSVERFAHREN
公开(公告)号：EP1838088A1
公开(公告)日：2007-09-26
申请号：EP05814419.7
申请日：2005-12-02
申请人： Sony Corporation
发明人： KOBAYASHI, Seiji c/o SONY CORPORATION
IPC分类号： H04N5/335 , H04N5/235
CPC分类号： H04N5/351 , H01L27/14607 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H04N5/145 , H04N5/232 , H04N5/23248 , H04N5/23251 , H04N5/23254 , H04N5/2351 , H04N5/2352 , H04N5/2353 , H04N5/345 , H04N5/379
摘要： The present invention is applied to an image pickup apparatus for which, for example, a CMOS solid-state image pickup element is used. One screen image is divided into a plurality of blocks, and a motion is detected for each of the blocks to control the exposure time of the block.
摘要翻译：本发明应用于例如使用CMOS固态图像拾取元件的图像拾取装置。一个屏幕图像被分成多个块，并且针对每个块检测运动以控制块的曝光时间。

93. 发明公开

EP1835539A3 Photodiode array, method of manufacturing the same, and radiation detector 有权
标题翻译： Photodiodenarray，Herstellungsverfahrendafürund Strahlungsdetektor
公开(公告)号：EP1835539A3
公开(公告)日：2007-09-26
申请号：EP07013166.9
申请日：2003-08-07
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Shibayama, Katsumi
IPC分类号： H01L27/14 , G01T1/20 , H04N5/32
CPC分类号： H01L31/103 , H01L27/1446 , H01L27/14634 , H01L27/1464 , H01L27/14643 , H01L31/02363 , H01L2224/11 , Y02E10/50
摘要： A back illuminated photodiode array (201) with a semiconductor substrate (203) has a light-incident surface side and an opposite side surface; said light incident surface includes a plurality of recessed parts (211) and a plurality of frame parts (213) surrounding said recessed parts (211), said frame parts (213) forming a lattice form as viewed from the direction of incidence of light; pn junctions (204) are formed at a side opposite the light incident surface and these pn junctions (204) are located at the opposite side surface in respective regions corresponding to the recessed parts (211); a separation layer (207) is formed at a side opposite the light incident surface; said separation layer (207) is located in regions that correspond to respective frame parts (213) and electrically separate photodiodes each formed by said pn junction (204). Bump electrodes (217,219) are formed at the opposite side surface and do not overlap said separation layer (207).
摘要翻译：在光电二极管阵列1中，通过从入射面侧变薄而形成的入射面侧凹部7以阵列的形式排列，并且通过使区域变薄形成的相对的表面侧凹部11对应于从相对于光入射面的相对面侧形成有光入射面侧凹部7的排列形式。由pn结3形成在相对表面侧凹部11的底部，pn结型光电二极管以阵列形式排列。

94. 发明公开

EP1628348A4 PHOTO-DETECTION DEVICE 审中-公开
标题翻译： PHOTODETEKTIONSVORRICHTUNG
公开(公告)号：EP1628348A4
公开(公告)日：2007-07-18
申请号：EP04734404
申请日：2004-05-21
申请人： HAMAMATSU PHOTONICS KK
发明人： SUZUKI YASUHIRO , MIZUNO SEIICHIRO
IPC分类号： H01L27/146 , H01L31/02 , H04N5/374
CPC分类号： H01L27/14636 , H01L23/481 , H01L27/14634 , H01L27/14638 , H01L27/14661 , H01L2224/0401 , H01L2224/05554 , H01L2224/0557 , H01L2224/16238 , H01L2924/0002 , Y10T307/773 , H01L2224/05552
摘要： A photo-detection device includes: a first substrate on which M x N photodiodes and switches are arranged; a second substrate on which signal processing sections are arranged for processing an output signal of the respective photodiodes; and a third substrate arranged between the first and the second substrate. The third substrate has a first surface opposing to the first substrate and a second surface opposing to the second substrate. On the first surface of the third substrate, M common wires are arranged for electrically connecting the photodiodes to the signal processing sections. On the second surface of the third substrate, bonding pads respectively connected to the common wires are arranged. Each of the photodiodes on the first substrate is electrically connected to each of the common wires on the third substrate via a first bump while each of the signal processing sections on the second substrate is electrically connected to each of the bonding pads on the third substrate via a second bump.

95. 发明公开

EP1786027A2 Plasma etching of tapered structures 审中-公开
标题翻译： Plasma-Àtzenvon konischen Strukturen
公开(公告)号：EP1786027A2
公开(公告)日：2007-05-16
申请号：EP06008902.6
申请日：2006-04-28
申请人： Schott AG
发明人： Ngo, Ha-Duong , Seidemann, Volker, Dr. , Studzinski, Daniel , Lange, Martin , Hiess, André
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L27/14609 , H01L27/14634 , H01L27/14806
摘要： The invention relates to a method of plasma etching substrates, in particular of etching tapered passages through substrates, using a process gas comprising at least one halogenide and oxygen.
摘要翻译：本发明涉及一种等离子体蚀刻衬底的方法，特别是使用包括至少一种卤化物和氧气的工艺气体蚀刻通过衬底的锥形通道。

96. 发明公开

EP1782475A1 TWO COLOUR PHOTON DETECTOR 审中-公开
标题翻译：双色光子探测器
公开(公告)号：EP1782475A1
公开(公告)日：2007-05-09
申请号：EP05748859.5
申请日：2005-06-07
申请人： BAE Systems PLC
发明人： JONES, Christopher Laurence BAE SYSTEMS Avionics , HIPWOOD, Leslie George BAE SYSTEMS Avionics , KNOWLES, Peter BAE SYSTEMS Avionics , MAXEY, Christopher David BAE SYSTEMS Avionics , ORDISH, Michael Allen BAE SYSTEMS Avionics
IPC分类号： H01L27/146
CPC分类号： H01L31/02162 , H01L27/14634 , H01L27/14647 , H01L27/14652 , H01L31/0352
摘要： A two-colour radiation detector (2) comprises a mesa-type multi-layered mercury-cadmium-telluride detector structure monolithically integrated on a substrate (6). The detector (2) is responsive to two discrete wavelength ranges separated by a wavelength range to which the detector (2) is not responsive.

97. 发明公开

EP1492168A4 SENSOR 有权
标题翻译：传感器
公开(公告)号：EP1492168A4
公开(公告)日：2007-03-28
申请号：EP03708524
申请日：2003-03-10
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIBAYAMA KATSUMI
IPC分类号： H01L27/146 , G01T1/20 , H01L27/14 , H01L27/144 , H01L31/09
CPC分类号： H01L27/14636 , G01T1/2018 , H01L27/14618 , H01L27/14634 , H01L27/1464 , H01L27/14661 , H01L27/14663 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05023 , H01L2224/05024 , H01L2224/05025 , H01L2224/05568 , H01L2224/16225 , H01L2924/15192
摘要： The sensor (D) includes a semiconductor chip, provided with photodiodes (PD) and output terminals (T), and a circuit board (C) with input terminals (I), such that the input terminals and output terminals are connected. The sensor also has a signal reading circuit (A) outside the input terminal formation region of the circuit board, for making dimensions of the circuit board smaller than the dimensions of the semiconductor chip.
摘要翻译：半导体芯片（S）设置有光学传感元件的光电二极管（PD）和输出端子（T）。电路板（C）设有用于接收来自半导体芯片（S）的输出端子（T）的信号的输入端子（I）。连接装置（CM）将端子（T）连接到相应的输入端子（I）。输入端子（I）之间的间隔小于输出端子（T）之间的间隔。该传感器在电路基板（C）的输入端子形成区域（RI）的外侧具有信号读取电路（A），电路基板（C）的尺寸比半导体芯片（S）小，。因此，当排列传感器（D）时，半导体芯片（S）彼此靠近或接触地设置，由此抑制传感器连接部分的分辨率降低。

98. 发明公开

EP1734583A1 Electron bombarded image sensor array device and its manufactoring method 审中-公开
标题翻译： ren ren ren ren ren ren ren ren ren ren ren ren ren ren
公开(公告)号：EP1734583A1
公开(公告)日：2006-12-20
申请号：EP05076385.3
申请日：2005-06-14
申请人： Photonis-DEP B.V.
发明人： Tomuta, Daniela Georgeta , Meinen, Albert Hendrik Jan , Ruiter, Gezinus , Van Spijker, Jan
IPC分类号： H01L27/146 , H01L31/0203
CPC分类号： H01J31/26 , H01L24/14 , H01L27/14618 , H01L27/14634 , H01L31/0203 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/15174 , H01L2924/15311 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The invention relates to an electron bombarded image sensor array device comprising a vacuum chamber having a photocathode capable of releasing electrons into said vacuum chamber when exposed to light impinging on said photocathode, a photocathode capable of releasing electrons into said vacuum chamber when exposed to light impinging on said photocathode, electric field means for accelerating said released electrons from said photocathode towards an anode spaced apart from said photocathode in a facing relationship to receive an electron image from said photocathode, said anode being constructed as a back-thinned image sensor array having electric connecting pads distributed according to a pattern along the surface area of said sensor facing away from said photocathode, a carrier on which said image sensor array is mounted, said carrier having electric connecting pads distributed according to a pattern to feed electric signals from said image sensor array outside said vacuum chamber and electric connecting means for electrically connecting at least one of said electric connecting pads of said image sensor array with at least one of said electric connecting pads of said carrier.
摘要翻译：本发明涉及一种电子轰击图像传感器阵列装置，其包括具有光电阴极的真空室，该真空室当暴露于入射到所述光电阴极上的光时，能够将电子释放到所述真空室中，当暴露于光照射时能够将电子释放到所述真空室中的光电阴极在所述光电阴极上，电场装置用于将所述释放的电子从所述光电阴极朝向与所述光电阴极隔开的阳极以面对的关系加速，以接收来自所述光电阴极的电子图像，所述阳极被构造为具有电气的背面薄化图像传感器阵列沿着所述传感器的表面区域背离所述光电阴极分布的连接焊盘，安装有所述图像传感器阵列的载体，所述载体具有根据图案分布的电连接焊盘，以馈送来自所述图像传感器的电信号阵列外面的真空室a d电连接装置，用于将所述图像传感器阵列的至少一个所述电连接焊盘与所述载体的所述电连接焊盘中的至少一个电连接。

99. 发明授权

EP1350290B1 SILICON WAFER WITH EMBEDDED OPTOELECTRONIC MATERIAL FOR MONOLITHIC OEIC 有权
标题翻译：和单片光电元件硅晶片
公开(公告)号：EP1350290B1
公开(公告)日：2006-11-22
申请号：EP01956069.7
申请日：2001-08-01
申请人： Amberwave Systems Corporation
发明人： FITZGERALD, Eugene, A.
IPC分类号： H01S5/02 , H01L27/15
CPC分类号： H01L33/26 , G02B6/12 , G02B6/12004 , G02B6/13 , G02B6/42 , G02B2006/12061 , G02B2006/12176 , H01L21/76256 , H01L25/167 , H01L27/12 , H01L27/14632 , H01L27/14634 , H01L27/15 , H01L31/1844 , H01L31/1852 , H01L33/0079 , H01L2221/68359 , H01L2221/68363 , H01L2924/0002 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/0218 , H01S5/026 , H01S5/0261 , Y02E10/544 , Y10S438/902 , H01L2924/00
摘要： A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is completely surrounded by Si, the wafer is fully compatible with standard Si CMOS manufacturing. For wavelengths of light longer than the bandgap of Si (1.1 νm), Si is completely transparent and therefore optical signals can be transmitted between the embedded optoelectronic layer and an external waveguide using either normal incidence (through the Si substrate or top Si cap layer) or in-plane incidence (edge coupling).

100. 发明公开

EP1589581A4 WIRING SUBSTRATE AND RADIATION DETECTOR USING SAME 审中-公开
标题翻译： VERDRAHTUNGSSUBSTRAT UND STRAHLUNGSDETEKTOR DAMIT
公开(公告)号：EP1589581A4
公开(公告)日：2006-08-23
申请号：EP04700761
申请日：2004-01-08
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIBAYAMA KATSUMI , KUSUYAMA YUTAKA , HAYASHI MASAHIRO
IPC分类号： G01T1/20 , H01L27/146 , G01T1/24 , G01T7/00 , H01L27/14 , H01L31/02 , H01L31/0232 , H01L31/09 , H04N5/32 , H05K1/02 , H05K1/11 , H05K3/42
CPC分类号： H01L27/14634 , H01L27/14618 , H01L31/02322 , H01L2224/16225 , H05K1/02 , H05K1/115 , H05K3/42
摘要： A wiring substrate portion (2) is disposed between a radiation detection portion (1) constituted of a scintillator (10) and a PD array (15) and a signal processing device (30) for processing a detection signal outputted from the PD array (15). The wiring substrate portion (2) comprises a wiring substrate (20) with a through hole (20c) where a conductive member (21) serving as a conductive path for transmitting the detection signal is provided. The opening of the through hole (20c) in a predetermined plane perpendicular to the direction of conduction from an input surface (20a) to an output surface (20b) is out of the extension in the conduction direction from the opening of the through hole (20c) in the input surface (20a). As a result, the opening in the output surface (20b) cannot be seen through the through hole (20c) from the opening in the input surface (20a). Thus, a wiring substrate through which the transmission of radiation is suppressed and a radiation detector using the same are provided.
摘要翻译：具有布线基板20的布线基板20安装在由闪烁体10和PD构成的放射线检测部1之间，该布线基板20具有填充有用作引导检测信号的导电路径的导电部件21的通孔20c 阵列15和用于处理从PD阵列15输出的检测信号的信号处理元件30.布线基板20中的每个通孔20c形成为使得相对于从输入表面垂直于导电方向的预定平面 20a到输出表面20b，该平面中的通孔20c的孔不沿着输入表面20a中的通孔20c的孔的导电方向延伸，并且使得通孔20c不能透过从输入表面20a到输出表面20b。这获得了能够抑制辐射传播的布线基板和使用它的放射线检测器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式