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    • 94. 发明公开
    • CVD diamond material for radiation detector and process for making same
    • CVD金刚石材料的辐射检测器和制造过程。
    • EP0582397A3
    • 1995-01-25
    • EP93305615.2
    • 1993-07-16
    • CRYSTALLUME
    • Plano, Mary AnneLandstrass, Maurice I
    • G01T1/202C23C16/26
    • C23C16/274C23C16/277C23C16/511G01T1/202G01T1/26
    • CVD diamond films useful for radiation detectors comprise diamond films having an average grain size of at least 7 microns and contain minimal hydrogen, which may be grown on substrates having deposited diamond films of a similar grain size. The diamond films of the present invention have a carrier mobility of at least 1,000 cm²/V-sec, a carrier lifetime of at least 100 psec and less than 200 nsec, yielding a collection distance of at least 10 microns at an electric field strength of 10⁴ V/cm, and a resistivity of at least 10¹⁰ Ω-cm. A surface radiation detector and a bulk radiation detector are fabricated using the CVD diamond materials of the present invention. A chemical-vapor-deposition method is disclosed for producing diamond materials suitable for use as radiation detectors according to the present invention. The diamond material of the present invention is grown on a suitable substrate material, such as large-grain polycrystalline diamond, single crystal diamond, diamond particulate composites and other non-diamond substrates that allow for large grain growth. A NIRIM style CVD reactor having a reactor chamber volume of about 300 in³, may be used. Microwave energy of 2.45 GHz at a power level of between about 1,400 to 1,900 watts is introduced to create a plasma in the region of a substrate holder and achieve a substrate temperature of between about 800-1,000°C. The reaction may be carried out in an atmosphere of 300 sccm of hydrogen, 3 sccm of methane, and 4.5 sccm of carbon monoxide at pressures from 90-100 Torr, and substrate temperatures of 800-1000° C.