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91. 发明公开

EP1811453A1 METHOD FOR SPEEDING UP SUPER RESOLUTION PROCESSING 审中-公开
标题翻译： VERFAHREN ZUM BESCHLEUNIGEN DERSUPERAUFLÖSUNGS-VERARBEITUNG
公开(公告)号：EP1811453A1
公开(公告)日：2007-07-25
申请号：EP05795779.7
申请日：2005-10-17
申请人： TOKYO INSTITUTE OF TECHNOLOGY
发明人： Tanaka, Masayuki , Okutomi, Masatoshi
IPC分类号： G06T3/40 , H04N1/387 , H04N5/232
CPC分类号： H04N1/3935 , G06T3/4069
摘要： A method is provided for speeding up a super-resolution processing by reducing the number of times for convolution operation that is the number of times for estimation calculation.
A fast method of super-resolution processing for speeding up a super-resolution processing that estimates a high-resolution image from multiple low-resolution images with a displacement, which comprising: a first step for performing a registration of said multiple low-resolution images in a high-resolution image space and treating all pixels of said multiple low-resolution images after the registration as pixels sampled at unequal interval within said high-resolution image space; a second step for dividing said high-resolution image space into multiple small areas with a predefined size; and a third step for defining an estimated value at a predefined representative position within said small area as an estimated value of all pixels that exist within said small area for each small area divided in said second step.
摘要翻译：提供一种通过减少用于估计计算次数的卷积运算次数来加速超分辨率处理的方法。一种超分辨率处理的快速方法，用于加速从具有位移的多个低分辨率图像估计高分辨率图像的超分辨率处理，其包括：第一步骤，用于执行所述多个低分辨率图像的注册在高分辨率图像空间中，并且将所述多个低分辨率图像的所有像素在所述注册之后处理为在所述高分辨率图像空间内以不等间隔采样的像素; 用于将所述高分辨率图像空间分割成具有预定尺寸的多个小区域的第二步骤; 以及第三步骤，用于在所述小区域内的预定代表位置处定义估计值，作为在所述第二步骤中划分的每个小区域，存在于所述小区域内的所有像素的估计值。

92. 发明公开

EP1810335A2 LIGHT-EMITTING DEVICE 有权转让
标题翻译：发光装置
公开(公告)号：EP1810335A2
公开(公告)日：2007-07-25
申请号：EP05806767.9
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , TOKYO INSTITUTE OF TECHNOLOGY
发明人： DEN, Tohru c/o CANON KABUSHIKI KAISHA, , IWASAKI, Tatsuya c/o CANON KABUSHIKI KAISHA, , HOSONO, Hideo c/o Tokyo Institute of Technology, , KAMIYA, Toshio c/o Tokyo Institute of Technology, , NOMURA, Kenji c/o Tokyo Institute of Technology,
IPC分类号： H01L27/32 , H01L29/786
摘要： An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
摘要翻译：本发明的一个目的是提供一种使用无定形氧化物的新型发光器件。该发光器件具有存在于第一和第二电极（77,79）与场效应晶体管之间的发光层（78），其中有源层（72）是非晶氧化物。

93. 发明公开

EP1783683A1 MOBILE PERIPHERAL MONITOR 审中-公开
标题翻译：移动外设监视器
公开(公告)号：EP1783683A1
公开(公告)日：2007-05-09
申请号：EP05770456.1
申请日：2005-08-11
申请人： TOKYO INSTITUTE OF TECHNOLOGY , HONDA MOTOR CO., Ltd.
发明人： SEKI, Akihito, TOKYO INSTITUTE OF TECHNOLOGY , OKUTOMI, Masatoshi, TOKYO INSTITUTE OF TECHNOLOGY , FUJIMAKI, Tomo, KABUSHIKI KAISHA HONDA GIJUTSU K.
IPC分类号： G06T7/00
CPC分类号： G06K9/00805 , B60R1/00 , B60R2300/107 , B60R2300/8093 , G06K2009/3291 , G06T7/74 , H04N7/181
摘要： A standard camera (12) picks up a standard image I b , and a reference camera (14) picks up a reference image I f . A flat area II f is extracted from the standard image I b and the reference image I r . An edge image is created by extracting the edges and feature points from the standard image I b and then a corrected edge image (62) is created by removing the flat area II f . Object detection processing is carried out on the edges and feature points of the corrected edge image (62) with reference to the reference image I f .
摘要翻译：标准相机（12）拾取标准图像Ib，并且参考相机（14）拾取参考图像If。从标准图像Ib和参考图像Ir提取平坦区域IIf。通过从标准图像Ib中提取边缘和特征点来创建边缘图像，然后通过去除平坦区域IIf来创建校正的边缘图像（62）。参考参考图像If对校正的边缘图像（62）的边缘和特征点执行对象检测处理。

94. 发明公开

EP1675169A1 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译： HALBLEITERSUBSTRAT，HALBLEITERBAUEMENT UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERSUBSTRATS
公开(公告)号：EP1675169A1
公开(公告)日：2006-06-28
申请号：EP04792014.5
申请日：2004-10-04
申请人： TOKYO INSTITUTE OF TECHNOLOGY
发明人： SAKAI, Tetsushi, c/o Tokyo Institute of Technology , OHMI, Shunichiro, c/o Tokyo Inst. of Technology , YAMAZAKI, Takashi, c/o Tokyo Inst. of Technology
IPC分类号： H01L21/762 , H01L27/12 , H01L29/786 , H01L21/336
CPC分类号： H01L29/78648 , H01L21/76283 , H01L21/823412 , H01L21/84 , H01L27/1203 , H01L29/78603 , H01L29/78606
摘要： An opening 35 is formed on an assembly having a silicon germanium layer 32, a silicon layer 33, and a silicon oxide layer 34 sequentially formed on a silicon basis material 31. An additional silicon oxide layer 36 is formed so as to cover the silicon oxide layer 34 and an inner surface of the opening 35. Then, the silicon germanium layer 32 is removed by etching, and a thermal oxidation treatment and an annealing treatment are sequentially performed on the silicon basis material 31 and the silicon layer 33 to form thermal oxidation layers 37 and 38. Then, a flat film 39 is formed for flat treatment to manufacture a semiconductor substrate 10 having an island part 12 made of silicon buried in an insulation component 13 made of silicon oxide. This allows for easily forming a high-integration CMOSLSI based on inter-element isolation, and sufficiently reducing the SOI layer and the BOX layer in thickness, thereby preventing the short channel effect as well as forming the SOI layer and the BOX layer in multi-layers.
摘要翻译：在硅基材31上依次形成有硅锗层32，硅层33和氧化硅层34的组件上形成开口35.另外，形成氧化硅层36以覆盖氧化硅层34和开口35的内表面。然后，通过蚀刻去除硅锗层32，并且在硅基材料31和硅层33上依次进行热氧化处理和退火处理以形成热氧化然后，形成用于平坦处理的平坦膜39，以制造半导体衬底10，半导体衬底10具有埋入由氧化硅制成的绝缘部件13中的由硅制成的岛部分12。这允许容易地形成基于元件间隔离的高集成度CMOSLSI，并且使SOI层和BOX层的厚度充分降低，从而防止短沟道效应以及在多层SOI层中形成SOI层和BOX层，层。

95. 发明公开

EP1338555A1 OXIDE MATERIAL, METHOD FOR PREPARING OXIDE THIN FILM AND ELEMENT USING SAID MATERIAL 审中-公开
标题翻译：氧化物材料，工艺用于生产和氧化物薄膜元件WHICH该材料用于
公开(公告)号：EP1338555A1
公开(公告)日：2003-08-27
申请号：EP01961325.6
申请日：2001-09-03
申请人： SHARP KABUSHIKI KAISHA , Japan represented by President of Tokyo Institute of Technology
发明人： KIJIMA, Takeshi , ISHIWARA, Hiroshi
IPC分类号： C01B13/14 , C01G29/00 , H01L27/10 , H01L21/316
CPC分类号： B82Y30/00 , C01B13/14 , C01B13/32 , C01B33/20 , C01G23/003 , C01G25/006 , C01G29/00 , C01G29/006 , C01G35/006 , C01P2002/02 , C01P2002/34 , C01P2002/50 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2004/64 , C01P2004/80 , C01P2006/40 , H01L21/02142 , H01L21/02161 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/31691 , Y10S502/514 , Y10S502/525
摘要： An oxide material characterized by that it has a perovskite structure comprising an oxide represented by ABO 3 , (Bi 2 O 2 ) 2+ (A m-1 B m O 3m+1 ) 2- wherein A represents one kind or two or more kinds of ions selected from the group consisting of Li + , Na + , K + , Pb 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Bi 3+ , Y 3+ , Mn 3+ and La 3+ , B represents one kind or two or more kinds of ions selected from the group consisting of Ru 3+ , Fe 3+ , Ti 4+ , Zr 4+ , Cu 4+ , Nb 5+ , Ta 5+ , V 5+ , W 6+ and Mo 6+ , and m represents a natural number of 1 or more, LnBa 2 Cu 3 O 7 , Z 2 Ba 2 Ca n-1 Cu n O 2n+4 or ZBa 2 Ca n-1 Cu n O 2n+3 , wherein Ln represents one kind or two or more kinds of ions selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, Z represents one kind or two or more kinds of ions selected from the group consisting of Bi, Tl and Hg,and n represents a natural number of from 1 to 5;and
a catalytic substance containing one or more kinds of elements selected from the group consisting of Si, Ge and Sn.
摘要翻译： <2 +>由没有其具有钙钛矿结构，其包括氧化物由ABO 3表示的，（Bi2O2）（AM-1BmO3m + 1）<2> worin甲darstellt一个孩子或两种或更多种离子选自特点的氧化物材料该组由Li的<+>，的Na <+>，K <+>，铅<2+>，钙<2+>，SR <2+>，钡<2+>，铋<3+>，Y <3+>，锰<3+>和La <3+>，B darstellt一个孩子或两种或更多种离子的选自钌<3+>，铁<3+>的选择，钛<4+ >，锆<4+>，铜<4+>，铌<5+> TA <5+>，V <5+>，W <6+>和Mo <6+>和m darstellt的自然数的1个或多个，LnBa2Cu3O7，Z2Ba2Can-1CunO2n + 4或ZBa2Can-1CunO2n + 3，worin LN darstellt一种或两种或更多种离子的选自Y，镧，铈，镨，钕，PM，Sm中选择的，铕，钆，铽，镝，钬，铒，铥，镱和陆，Z darstellt一个孩子或两种以上选自铋，铊和汞的选择离子，和n darstellt自然数从 1至5个;以及含有元素的一种或多种选自下组的催化物质由Si，Ge和Sn的。

96. 发明公开

EP1136614A1 Method for forming a thin film 审中-公开
标题翻译： Verfahren zur Herstellung einerdünnenSchicht
公开(公告)号：EP1136614A1
公开(公告)日：2001-09-26
申请号：EP01106730.3
申请日：2001-03-16
申请人： TOKYO INSTITUTE OF TECHNOLOGY
发明人： Yoshimura, Masahiro , Fujiwara, Takeshi , Watanabe, Tomoaki , Teranishi, Ryo
IPC分类号： D06M11/53 , D06M23/02 , D06M23/16 , B44C1/04
CPC分类号： D21H19/00 , D06M11/53 , D06M23/16 , D21H17/70 , D21H23/50 , Y10S438/96
摘要： A water solution of lead nitrate is infiltrated into a substrate made of a porous material, and liquid drops of a water solution of sodium sulfide, which is charged into a ink cartridge of a minute nozzle, are sprayed onto the substrate from the minute nozzle. The lead component from the lead nitrate water solution and the sulfur component from the sodium sulfide water solution are synthesized directly on the substrate, and thus, a thin film made of lead sulfide is formed on the substrate.
摘要翻译：将硝酸铅的水溶液渗透到由多孔材料制成的基材中，并将装入微小喷嘴的墨盒中的硫化钠水溶液的液滴从微小喷嘴喷射到基材上。来自硝酸铅水溶液的铅成分和来自硫化钠水溶液的硫成分直接在基板上合成，因此在基板上形成由硫化铅构成的薄膜。

97. 发明授权

EP0451641B1 Method of manufacturing oxide high-temperature superconductor thin film by means of molecular-beam epitaxy 失效
标题翻译：用于生产使用分子束外延氧化物高温超导体的方法。
公开(公告)号：EP0451641B1
公开(公告)日：1995-06-07
申请号：EP91105025.0
申请日：1991-03-28
申请人： President of TOKYO INSTITUTE OF TECHNOLOGY
发明人： Kawai, Maki , Watanabe, Shunji
IPC分类号： H01L39/24
CPC分类号： H01L39/2432

99. 发明公开

EP0451641A1 Method of manufacturing oxide high-temperature superconductor thin film by means of molecular-beam epitaxy 失效
标题翻译： Methode zur Herstellung von oxydischen Hochtemperatursupraleitern mit Hilfe der Molekularstrahlepitaxie。
公开(公告)号：EP0451641A1
公开(公告)日：1991-10-16
申请号：EP91105025.0
申请日：1991-03-28
申请人： President of TOKYO INSTITUTE OF TECHNOLOGY
发明人： Kawai, Maki , Watanabe, Shunji
IPC分类号： H01L39/24
CPC分类号： H01L39/2432
摘要： Monatomic layers each formed of a single metal are sequentially formed on a substrate using a molecular-beam epitaxy to form a multilayered metal film consisting of a plurality of types of metals, and sequentially with formation the monatomic layers, nitrogen dioxide gas as an oxidizer is supplied to oxidize the multilayered metal film. The same operation is repeatedly performed a predetermined number of times to form an oxide high-temperature superconductor thin film having a predetermined thickness.
摘要翻译：使用分子束外延在基板上依次形成由单一金属形成的单原子层，以形成由多种金属构成的多层金属膜，并依次形成单原子层，作为氧化剂的二氧化氮为供给氧化多层金属膜。重复进行相同的操作预定次数以形成具有预定厚度的氧化物高温超导体薄膜。

100. 发明公开

EP0430379A1 Chemical reactor 失效
标题翻译：化学反应器。
公开(公告)号：EP0430379A1
公开(公告)日：1991-06-05
申请号：EP90203205.1
申请日：1988-07-08
申请人： TOKYO INSTITUTE OF TECHNOLOGY , ISHIKAWAJIMA-HARIMA JUKOGYO KABUSHIKI KAISHA , KABUSHIKI KAISHA KOBE SEIKO SHO , CHIYODA CORPORATION , KABUSHIKI KAISHA TOSHIBA , Ryoka Techno Engineering & Construction Co. , MITSUBISHI JUKOGYO KABUSHIKI KAISHA , MITSUBISHI PETROCHEMICAL ENGINEERING CO., LTD.
发明人： Echigo, Ryozo , Yoshizawa, Yoshio , Ikeda, Mikio , Aoki, Mamoru , Shimizu, Ryosuke , Onomura, Masaki , Iwasa, Koichi , Ide, Yuichi , Yamana, Noboru
IPC分类号： B01J19/00 , C01B3/38 , B01J8/06
CPC分类号： B01J12/007 , B01J19/0013 , B01J2219/00121 , B01J2219/00157 , C01B3/384 , C01B2203/0811 , C01B2203/0816 , C01B2203/0866
摘要： A chemical reactor has two chambers (1 ,3) separated by a partition wall (5), a porous heat radiating body (2) being disposed in one of the chambers (1) and a porous heat-receiving body (4) being disposed in the other chamber (3). The heat-receiving body (4) is divided into three layers (4a,4b,4c) in the direction of flow of the raw gas mixture through it and the layer (4c) furthest downstream in the heat-receiving body has a catalyst material dispersed in it whilst the other two layers (4a,4b) do not. Reactant gases (9) passing through the heat-receiving body (4) are thus heated in the two upstream layers (4a,4b) and only begin to react in the downstreap layer (4c) where the catalyst is located.

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