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1. 发明授权

EP2958153B1 POST-PROCESSING APPARATUS OF SOLAR CELL 有权转让
公开(公告)号：EP2958153B1
公开(公告)日：2019-08-07
申请号：EP15001779.6
申请日：2015-06-16
申请人： LG Electronics Inc.
发明人： Lee, Kyoungsoo , Choi, Minho , Lee, Jinhyung , Kwag, Gyeayoung , Park, Sangwook
IPC分类号： H01L31/18 , H01L21/67 , H01L21/677 , H05B3/00

2. 发明公开

EP2804219A1 Solar cell and method for manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：EP2804219A1
公开(公告)日：2014-11-19
申请号：EP14001746.8
申请日：2014-05-16
申请人： LG Electronics, Inc.
发明人： Choi, Minho , Park, Hyunjung , Choi, Junghoon , Choe, Youngho
IPC分类号： H01L31/0224 , H01L31/0747
摘要： Discussed is a solar cell including a semiconductor substrate including a base area and a doping area, a doping layer formed on the semiconductor substrate, the doping layer having a conductive type different from the doping area, a tunneling layer interposed between the doping layer and the semiconductor substrate, a first electrode connected to the doping area, and a second electrode connected to the doping layer.
摘要翻译：所述太阳能电池包括：包括基区和掺杂区的半导体衬底;形成在所述半导体衬底上的掺杂层，所述掺杂层具有与所述掺杂区不同的导电类型;隧穿层，插入在所述掺杂层和所述掺杂区之间半导体衬底，连接到掺杂区域的第一电极以及连接到掺杂层的第二电极。

3. 发明公开

EP2398061A2 Solar cell 有权
公开(公告)号：EP2398061A2
公开(公告)日：2011-12-21
申请号：EP11004903.8
申请日：2011-06-15
申请人： LG ELECTRONICS INC.
发明人： Kim, Sungjin , Kwag, Gyeayoung , Do, Younggu , Yi, Mann , Lee, Seongeun , Yang, Youngsung , Kwon, Taeyoung , Cho, Haejong , Choi, Minho , Cheong, Juhwa
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , H01L31/022433 , H01L31/068 , Y02E10/52 , Y02E10/547
摘要： A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type, a plurality of first electrodes connected to the emitter layer, at least one first current collector connected to the plurality of first electrodes, and a second electrode connected to the substrate. The emitter layer forms a p-n junction along with the substrate. Each of the plurality of first electrodes has a multi-layered structure, and the at least one first current collector has a single-layered structure.

4. 发明授权

EP2955761B1 METHOD FOR MANUFACTURING SOLAR CELL 有权转让
公开(公告)号：EP2955761B1
公开(公告)日：2019-08-14
申请号：EP15001698.8
申请日：2015-06-08
申请人： LG Electronics Inc.
发明人： Lee, Kyoungsoo , Choi, Minho , Lee, Jinhyung , Kwag, Gyeayoung , Park, Sangwook
IPC分类号： H01L31/18 , H01L21/30

5. 发明公开

EP2525412A2 Solar cell and solar cell module 有权转让
标题翻译：太阳能电池和太阳能电池组件
公开(公告)号：EP2525412A2
公开(公告)日：2012-11-21
申请号：EP12003230.5
申请日：2012-04-30
申请人： LG ELECTRONICS INC.
发明人： Yang, Youngsung , Shin, Myungjun , Choi, Minho , Lee, Seongeun
IPC分类号： H01L31/0224
CPC分类号： H01L31/022433 , H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A solar cell includes a semiconductor substrate (110), an emitter region (121) positioned at the semiconductor substrate, a first electrode which is positioned on the semiconductor substrate and is connected to the emitter region, a second electrode which is positioned on the semiconductor substrate and is connected to the semiconductor substrate, and a second electrode current collector which is positioned on the semiconductor substrate and is connected to the second electrode. An overlap distance (d21, d22) between the second electrode and the second electrode current collector in a first direction (Y) corresponding to an extension direction of a conductive film positioned on the second electrode current collector is less than an overlap distance (d11, d12) between the second electrode and the second electrode current collector in a second direction (X) crossing the first direction.
摘要翻译：一种太阳能电池，包括：半导体衬底（110）;位于所述半导体衬底处的发射极区域（121）;位于所述半导体衬底上且连接至所述发射极区域的第一电极;位于所述半导体衬底上的第二电极衬底并且连接到半导体衬底;以及第二电极集流器，位于半导体衬底上并连接到第二电极。第二电极和第二电极集流体之间在与位于第二电极集流体上的导电膜的延伸方向相对应的第一方向（Y）上的重叠距离（d21，d22）小于重叠距离（d11， d12）在与第一方向交叉的第二方向（X）上在第二电极和第二电极集流器之间。

6. 发明公开

EP2797124A1 Solar cell and method for manufacturing the same 审中-实审转让
标题翻译：太阳能电池及其制造方法
公开(公告)号：EP2797124A1
公开(公告)日：2014-10-29
申请号：EP14001446.5
申请日：2014-04-22
申请人： LG Electronics, Inc.
发明人： Choi, Minho , Park, Hyunjung , Choi, Junghoon
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/02167 , H01L31/022441 , H01L31/072 , H01L31/0745 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a semiconductor substrate (10), a tunneling layer (20) on one surface of the semiconductor substrate, a first conductive type area (32) on the tunneling layer, a second conductive type area (34) on the tunneling layer such that the second conductive type area (34) is separated from the first conductive type area (32), and a barrier area (36) interposed between the first conductive type area and the second conductive type area such that the barrier area (36) separates the first conductive type area (32) from the second conductive type area (34).
摘要翻译：一种太阳能电池，包括半导体衬底（10），在半导体衬底的一个表面上的隧穿层（20），在隧穿层上的第一导电类型区域（32），在隧穿层上的第二导电类型区域（34）使得所述第二导电类型区域与所述第一导电类型区域分离，以及插入在所述第一导电类型区域和所述第二导电类型区域之间的阻挡区域，将第一导电类型区域（32）与第二导电类型区域（34）分开。

7. 发明公开

EP2398061A3 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：EP2398061A3
公开(公告)日：2013-09-18
申请号：EP11004903.8
申请日：2011-06-15
申请人： LG ELECTRONICS INC.
发明人： Kim, Sungjin , Kwag, Gyeayoung , Do, Younggu , Yi, Mann , Lee, Seongeun , Yang, Youngsung , Kwon, Taeyoung , Cho, Haejong , Choi, Minho , Cheong, Juhwa
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , H01L31/022433 , H01L31/068 , Y02E10/52 , Y02E10/547
摘要： A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type, a plurality of first electrodes connected to the emitter layer, at least one first current collector connected to the plurality of first electrodes, and a second electrode connected to the substrate. The emitter layer forms a p-n junction along with the substrate. Each of the plurality of first electrodes has a multi-layered structure, and the at least one first current collector has a single-layered structure.
摘要翻译：讨论太阳能电池及其制造方法。太阳能电池包括第一导电类型的基板，与第一导电类型相反的第二导电类型的发射极层，连接到发射极层的多个第一电极，连接到多个第一电极的至少一个第一集电器以及连接到衬底的第二电极。发射极层与衬底一起形成p-n结。多个第一电极中的每一个具有多层结构，并且至少一个第一集电器具有单层结构。

8. 发明公开

EP2472591A1 Solar cell module 审中-公开
标题翻译：太阳能电池组件
公开(公告)号：EP2472591A1
公开(公告)日：2012-07-04
申请号：EP12000019.5
申请日：2012-01-03
申请人： LG ELECTRONICS INC.
发明人： Shin, Myungjun , Cho, Haejong , Choi, Minho , Lee, Seongeun
IPC分类号： H01L31/0224 , H01L31/05 , H01L31/18 , H01L31/042
CPC分类号： H01L31/0504 , H01L31/022441 , H01L31/0516 , H01L31/0682 , Y02E10/547
摘要： A solar cell module includes a plurality of solar cells each including a substrate, an emitter region positioned at a back surface of the substrate, first electrodes electrically connected to the emitter region, second electrodes electrically connected to the substrate, a first current collector connecting the first electrodes, and a second current collector connecting the second electrodes, and a first connector connecting a first current collector of a first solar cell of the plurality of solar cells to a second current collector of a second solar cell adjacent to the first solar cell. The first current collector of the first solar cell and the second current collector of the second solar cell have a different polarity.
摘要翻译：一种太阳能电池模块，包括多个太阳能电池，每个太阳能电池包括基板，位于基板背面的发射极区域，电连接到发射极区域的第一电极，电连接到基板的第二电极，连接第一电极以及连接第二电极的第二集电器;以及第一连接器，将多个太阳能电池中的第一太阳能电池的第一集电器连接到与第一太阳能电池相邻的第二太阳能电池的第二集电器。第一太阳能电池的第一集电器和第二太阳能电池的第二集电器具有不同的极性。

9. 发明公开

EP2958153A1 POST-PROCESSING APPARATUS OF SOLAR CELL 有权转让
标题翻译： NACHBEARBEITUNGSVORRICHTUNG EINER SOLARZELLE
公开(公告)号：EP2958153A1
公开(公告)日：2015-12-23
申请号：EP15001779.6
申请日：2015-06-16
申请人： LG Electronics Inc.
发明人： Lee, Kyoungsoo , Choi, Minho , Lee, Jinhyung , Kwag, Gyeayoung , Park, Sangwook
IPC分类号： H01L31/18 , H01L21/67
CPC分类号： H01L21/67115 , H01L21/6776 , H01L31/1864 , H05B3/0047 , Y02E10/50 , Y02P70/521
摘要： A post-processing apparatus of a solar cell is discussed. The post-processing apparatus carries out a post-processing operation including a main period for heat-treating a solar cell including a semiconductor substrate while providing light to the solar cell. The post-processing apparatus includes a main section to carry out the main period. The main section includes a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate. The first heat source unit and the light source unit are positioned in the main section. The light source unit includes a light source constituted by a plasma lighting system (PLS).
摘要翻译：讨论太阳能电池的后处理装置。后处理装置执行后处理操作，其包括用于对包括半导体衬底的太阳能电池进行热处理的主要周期，同时向太阳能电池提供光。后处理装置包括执行主时段的主要部分。主要部分包括向半导体衬底提供热量的第一热源单元和向半导体衬底提供光的光源单元。第一热源单元和光源单元位于主区段中。光源单元包括由等离子体照明系统（PLS）构成的光源。

10. 发明公开

EP2955761A1 METHOD FOR MANUFACTURING SOLAR CELL 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER SOLARZELLE
公开(公告)号：EP2955761A1
公开(公告)日：2015-12-16
申请号：EP15001698.8
申请日：2015-06-08
申请人： LG Electronics Inc.
发明人： Lee, Kyoungsoo , Choi, Minho , Lee, Jinhyung , Kwag, Gyeayoung , Park, Sangwook
IPC分类号： H01L31/18 , H01L21/30
CPC分类号： H01L31/1864 , H01L21/3003 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A method of manufacturing a solar cell is discussed. The method of manufacturing the solar cell includes: forming a conductive region on a semiconductor substrate; forming an electrode connected to the conductive region; and post-processing the semiconductor substrate to passivate the semiconductor substrate. The post-processing of the semiconductor substrate comprises a main processing process for heat-treating the semiconductor substrate while providing light to the semiconductor substrate. A temperature of the main processing process is about 100°C to about 800°C, and the temperature and light intensity of the main processing process satisfy Equation of 1750 - 31.8·T + (0.16)·T 2 ≤ I. Here, T is the temperate (°C) of the main processing process, and I is the light intensity(mW/cm 2 ) of the main processing process.
摘要翻译：讨论了制造太阳能电池的方法。制造太阳能电池的方法包括：在半导体衬底上形成导电区域; 形成连接到所述导电区域的电极; 并对半导体衬底进行后处理以钝化半导体衬底。半导体衬底的后处理包括用于对半导体衬底进行热处理同时向半导体衬底提供光的主要处理工艺。主加工工序的温度为100℃〜800℃左右，主加工工序的温度和光强度满足1750〜31.8·T +（0.16）·T 2‰的等式。这里， T是主处理过程的温度（°C），I是主处理过程的光强度（mW / cm 2）。

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