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    • 7. 发明公开
    • Photovoltaic device and manufacturing method thereof
    • Photovoltaikvorrichtung und Herstellungsverfahrendafür
    • EP2273563A2
    • 2011-01-12
    • EP10160268.8
    • 2010-04-19
    • KISCO
    • Myong, Seung-Yeop
    • H01L31/075H01L31/18H01L31/0368H01L31/0376
    • H01L31/03687H01L31/03765H01L31/076H01L31/1816H01L31/1824Y02E10/545Y02E10/548Y02P70/521
    • Disclosed is a photovoltaic device. The photovoltaic device includes:
      a substrate;
      a first electrode disposed on the substrate;
      at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and
      a second electrode disposed on the photoelectric transformation layer,
      wherein the light absorbing layer includes the first sub-layer and the second sub-layer, the first sub-layer including hydrogenated micro-crystalline silicon germanium (µc-SiGe:H) and an amorphous silicon germanium network (a-SiGe:H) formed among the hydrogenated micro-crystalline silicon germaniums, the second sub-layer including hydrogenated micro-crystalline silicon (µc-Si:H) and an amorphous silicon network (a-Si:H) formed among the hydrogenated micro-crystalline silicons.
    • 公开了一种光伏器件。 光伏器件包括:衬底(100); 设置在所述基板上的第一电极(210) 设置在所述第一电极上的至少一个光电转换层(230),所述光电转换层包括光吸收层(233); 和设置在所述光电转换层上的第二电极,其中所述光吸收层包括所述第一子层和所述第二子层,所述第一子层包括氢化微层, 晶体硅锗(μc-SiGe:H)和在氢化微晶硅锗之间形成的非晶硅锗网络(a-SiGe:H),第二子层(233b)包括氢化微晶硅(μc- Si:H)和在氢化微晶硅中形成的非晶硅网络(a-Si:H)。