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1. 发明公开

EP2060887A1 PHOTODETECTOR 审中-公开
标题翻译： PHOTODETEKTOR
公开(公告)号：EP2060887A1
公开(公告)日：2009-05-20
申请号：EP07806740.2
申请日：2007-09-05
申请人： Hamamatsu Photonics K.K.
发明人： MIZOGUCHI, Masaki , SUZUKI, Yasuhiro , MIZUNO, Seiichiro , YAMAMOTO, Hiroo
IPC分类号： G01J1/44 , H01L21/822 , H01L27/04 , H01L31/10
CPC分类号： G01J1/46 , H01L27/14609 , H04N5/3575 , H04N5/378
摘要： A photodetecting device 1 includes a photodiode PD m,n , a switch SW m,n for the photodiode, an integrating circuit 12 m , and a noise removing circuit 13 m . The integrating circuit 12 m accumulates in a capacitor C fk an electric charge input from the photodiode PD m,n through the switch SW m,n for the photodiode, and outputs a voltage value according to the amount of the accumulated electric charge. The noise removing circuit 13 m includes an amplifier A 3 , five switches SW 31 to SW 35 , four capacitors C 31 to C 34 , and a power supply V 3 . The noise removing circuit 13 m takes in a voltage value that is output from the integrating circuit 12 m at a time where the switch SW 31 is first turned from a closed state to an open state, and after the time, outputs a voltage value according to a difference between the voltage value that is output from the integrating circuit 12 m and the voltage value previously taken in.
摘要翻译：受光器件1包括光电二极管PD m，n，用于光电二极管的开关SW m，n，积分电路12 m和噪声去除电路13m。积分电路12m通过用于光电二极管的开关SW m，n累积从光电二极管PD m，n输入的电荷的电容器C fk，并输出与累积电荷量相对应的电压值。噪声去除电路13m包括放大器A 3，五个开关SW 31至SW 35，四个电容器C 31至C 34以及电源V 3。噪声去除电路13m在开关SW 31首先从闭合状态转为断开状态时从积分电路12m输出的电压值，并且在此之后输出电压值对于从积分电路12 m输出的电压值与之前摄入的电压值的差。

2. 发明授权

EP2063535B1 AD CONVERTER CIRCUIT AND OPTICAL SENSOR 有权
标题翻译： AD转换电路和光学传感器
公开(公告)号：EP2063535B1
公开(公告)日：2012-09-05
申请号：EP07806745.1
申请日：2007-09-05
申请人： Hamamatsu Photonics K.K.
发明人： MIZOGUCHI, Masaki , SUZUKI, Yasuhiro , MIZUNO, Seiichiro , YAMAMOTO, Hiroo
IPC分类号： H03M1/14 , H01L31/10 , H03M1/38
CPC分类号： H03M1/0682 , H01L27/14609 , H03M1/0604 , H03M1/468 , H04N5/378

3. 发明公开

EP2063535A1 AD CONVERTER CIRCUIT AND OPTICAL SENSOR 有权
标题翻译： AD-WANDLERSCHALTUNG UND OPTISCHER SENSOR
公开(公告)号：EP2063535A1
公开(公告)日：2009-05-27
申请号：EP07806745.1
申请日：2007-09-05
申请人： Hamamatsu Photonics K.K.
发明人： MIZOGUCHI, Masaki , SUZUKI, Yasuhiro , MIZUNO, Seiichiro , YAMAMOTO, Hiroo
IPC分类号： H03M1/14 , H01L31/10 , H03M1/38
CPC分类号： H03M1/0682 , H01L27/14609 , H03M1/0604 , H03M1/468 , H04N5/378
摘要： The A/D converting circuit 20 is provided with a differential amplifying portion 21, a first variable capacitance portion 22A, a second variable capacitance portion 22B, a comparing portion 23, a connection controlling portion 24, a first feedback portion 25A and a second feedback portion 25B. Voltage values output as a differential signal from the first output terminal and the second output terminal of the differential amplifying portion 21 are converted to 6-bit digital values by a successive approximation type A/D converting circuit (made up of a first variable capacitance portion 22A, a second variable capacitance portion 22B, a comparing portion 23 and a connection controlling portion 24) and output. A difference in potential between the first common point P 1 and the second common point P 2 is fed back to the differential amplifying portion 21 by the first feedback portion 25A and the second feedback portion 25B, and again converted to a 6-bit digital value by the successive approximation type A/D converting circuit and output.
摘要翻译： A / D转换电路20具有差分放大部分21，第一可变电容部分22A，第二可变电容部分22B，比较部分23，连接控制部分24，第一反馈部分25A和第二反馈部分25B。从差分放大部21的第一输出端子和第二输出端子输出的作为差分信号的电压值通过逐次逼近型A / D转换电路（由第一可变电容部分 22A，第二可变电容部分22B，比较部分23和连接控制部分24）并输出。第一公共点P 1和第二公共点P 2之间的电位差由第一反馈部分25A和第二反馈部分25B反馈到差分放大部分21，并再次转换成6位数字值通过逐次逼近型A / D转换电路和输出。

4. 发明公开

EP3869570A1 LIGHT DETECTION ELEMENT AND LIGHT DETECTION DEVICE 审中-公开
公开(公告)号：EP3869570A1
公开(公告)日：2021-08-25
申请号：EP19873708.2
申请日：2019-07-10
申请人： Hamamatsu Photonics K.K.
发明人： MASE, Mitsuhito , TAGUCHI, Keiki , ISHIHARA, Hajime , YAMAMOTO, Hiroo , SHIMADA, Akihiro
IPC分类号： H01L31/10 , G01S17/08
摘要： A light detection element includes a semiconductor substrate, a light absorbing layer of a first conductivity type formed on the semiconductor substrate, a cap layer of a first conductivity type formed on the light absorbing layer, and a semiconductor region of a second conductivity type formed within the cap layer and forming a pn junction with the cap layer. A depletion layer formed around the semiconductor region does not reach the light absorbing layer in a case where a reverse bias is not applied to the pn junction, and exceeds a position amounting to 50% of a thickness of the light absorbing layer from the cap layer side in a case where a reverse bias of 20 V is applied to the pn junction.

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