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1. 发明公开

EP1241711A3 Semiconductor element, and method of forming silicon-based film 审中-公开
标题翻译：半导体器件及其制造方法的含硅膜
公开(公告)号：EP1241711A3
公开(公告)日：2007-07-04
申请号：EP02005536.4
申请日：2002-03-11
申请人： CANON KABUSHIKI KAISHA
发明人： Kondo, Takaharu , Okabe, Shotaro , Sano, Masafumi , Sakai, Akira , Hayashi, Ryo. , Sugiyama, Suichiro
IPC分类号： H01L31/0368 , H01L31/075 , H01L31/18
CPC分类号： H01L29/66765 , H01L29/045 , H01L29/78618 , H01L29/78678 , H01L29/78696 , H01L31/03685 , H01L31/075 , H01L31/182 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10T428/261
摘要： The present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, the element being characterized in that at least one of the silicon-based films contains a microcrystal, and microcrystal located in at least one interface region of the silicon-based films containing the microcrystal has no orientation property. Further, the present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, wherein at least one of the silicon-based films contains a microcrystal, and the orientation property of the microcrystal in the silicon-based film containing the microcrystal changes in a film thickness direction of the silicon-based film containing the microcrystal. In order to provide an inexpensive silicon-based film showing excellent performance, the present invention provides a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film, and a semiconductor element using this silicon-based film and having excellent adhesion and environmental resistance.

2. 发明公开

EP1241711A2 Semiconductor element, and method of forming silicon-based film 审中-公开
标题翻译： Halbleiterbauelement und Herstellungsverfahrenfüreinen ium焓薄膜
公开(公告)号：EP1241711A2
公开(公告)日：2002-09-18
申请号：EP02005536.4
申请日：2002-03-11
申请人： CANON KABUSHIKI KAISHA
发明人： Kondo, Takaharu , Okabe, Shotaro , Sano, Masafumi , Sakai, Akira , Hayashi, Ryo. , Sugiyama, Suichiro
IPC分类号： H01L31/0368 , H01L31/075 , H01L31/18
CPC分类号： H01L29/66765 , H01L29/045 , H01L29/78618 , H01L29/78678 , H01L29/78696 , H01L31/03685 , H01L31/075 , H01L31/182 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10T428/261
摘要： The present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, the element being characterized in that at least one of the silicon-based films contains a microcrystal, and microcrystal located in at least one interface region of the silicon-based films containing the microcrystal has no orientation property. Further, the present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, wherein at least one of the silicon-based films contains a microcrystal, and the orientation property of the microcrystal in the silicon-based film containing the microcrystal changes in a film thickness direction of the silicon-based film containing the microcrystal. In order to provide an inexpensive silicon-based film showing excellent performance, the present invention provides a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film, and a semiconductor element using this silicon-based film and having excellent adhesion and environmental resistance.
摘要翻译：本发明提供了一种半导体元件，其包括由硅基膜构成的半导体结，该元件的特征在于，至少一个硅基膜含有微晶体，微晶体位于硅基膜的至少一个界面区域中，含有微晶的基膜不具有取向性。此外，本发明提供了一种半导体元件，其包括由硅基膜构成的半导体结，其中至少一个硅基膜含有微晶，并且微晶体在含有微晶体的硅基膜中的取向性能包含微晶的硅基膜的膜厚度方向的变化。为了提供一种表现出优异性能的廉价的硅基膜，本发明提供了一种具有缩短的制作时间，提高的成膜速度和优异特性的硅基膜，以及包括该硅基膜的半导体元件，以及使用该硅系膜的半导体元件，具有优异的粘附性和耐环境性。

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