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1. 发明公开

CN103532492A 一种基于波导调制技术的宽带调幅毫米波反射系统无效
公开(公告)号：CN103532492A
公开(公告)日：2014-01-22
申请号：CN201210224788.5
申请日：2012-07-02
申请人：核工业西南物理研究院
发明人：石中兵 , 刘泽田 , 丁玄同
IPC分类号： H03C7/02 , H03D7/04 , H03D9/06 , H03L7/26
摘要：本发明属于核聚变等离子体微波诊断技术领域，具体涉及一种基于矩形波导的宽带、低损耗、高频微波调制器及基于该波导调制器的宽带调幅毫米波反射系统。其中石英晶体振荡器B与功率放大器连接，功率放大器与波导调制器中频输入端连接，微波源与波导调制器微波输入端连接，波导调制器与微波放大器连接，微波放大器与喇叭天线连接；微波检波器与选频放大器连接，选频放大器与下变频器A连接，石英晶体振荡器B还与下变频器B连接，石英晶体振荡器A分别与下变频器A和下变频器B连接，下变频器A与带通滤波器A连接，带通滤波器A与鉴相器连接，下变频器B与带通滤波器B连接，带通滤波器B与鉴相器连接。本发明可实现低损耗、超高频微波幅度调制。

2. 发明公开

CN115208322A 一种集成本振源的太赫兹混频器审中-实审
公开(公告)号：CN115208322A
公开(公告)日：2022-10-18
申请号：CN202210809232.6
申请日：2022-07-11
申请人：中国电子科技集团公司第五十四研究所
发明人：刘军 , 宋瑞良 , 刘宁 , 崔东暖 , 宋树田
IPC分类号： H03D7/04 , H03D7/14
摘要：本发明公开了一种集成本振源的太赫兹混频器，属于太赫兹射频技术领域，其包括：磷化铟InP基板电路、金属腔体、射频波导以及减高波导，InP基板电路上依次设有射频接地结构、射频探针过渡结构、射频匹配结构、反向并联共振隧穿二极管对、本振匹配结构、本振低通滤波结构、本振双工结构、基于共振隧穿二极管本振源结构、中频低通滤波器结构；非线性器件采用单片集成的反向并联共振隧穿二极管实现，位于射频匹配结构与本振匹配结构之间；本振源采用基于共振隧穿二极管实现，通过本振双工结构馈入反向并联二极管。本发明采用全单片集成的方式实现，共振隧穿二极管为混频器提供本振信号，减小了体积，降低了复杂性，改善了变频损耗，提高了器件的稳定性。

3. 发明授权

US3508169A Apparatus including lsa oscillator circuits 失效
公开(公告)号：US3508169A
公开(公告)日：1970-04-21
申请号：US3508169D
申请日：1967-06-20
申请人： BELL TELEPHONE LABOR INC
发明人： COPELAND JOHN A
IPC分类号： H03C1/08 , G05D15/01 , H03B9/12 , H03D7/04 , H03F3/66 , H03C1/14 , H02M5/20 , H03F3/10
CPC分类号： H03B9/12 , G05D15/01

4. 发明公开

EP0188326A2 SIS mixer having thin-film wrap-around edge contact 失效
标题翻译： SIS混合器与薄层，边缘接触的观察者位置。
公开(公告)号：EP0188326A2
公开(公告)日：1986-07-23
申请号：EP86300093.1
申请日：1986-01-08
申请人： AT&T Corp.
发明人： Miller, Ronald Eugene , Stark, Antony Albert
IPC分类号： H03D7/04
CPC分类号： H03D9/0608 , Y10S505/853
摘要： A single substrate with a stripline circuit on one of its surfaces for use in a down converting mixer has a thin metallic film deposited utilizing photolithographic techniques into two free ends: one end with the junction section of the stripline circuit for establishing a ground path with the metal block upon which the substrate rests and the other end with the filter section of the stripline circuit for establishing the intermediate frequency signal path with the inner conductor of coaxial cable.

5. 实用新型

CN202818230U 一种基于波导调制技术的宽带调幅毫米波反射系统失效
公开(公告)号：CN202818230U
公开(公告)日：2013-03-20
申请号：CN201220315723.7
申请日：2012-07-02
申请人：核工业西南物理研究院
发明人：石中兵 , 刘泽田 , 丁玄同
IPC分类号： H03C7/02 , H03D7/04 , H03D9/06 , H03L7/26
摘要：本实用新型属于核聚变等离子体微波诊断技术领域，具体涉及一种基于矩形波导的宽带、低损耗、高频微波调制器及基于该波导调制器的宽带调幅毫米波反射系统。其中石英晶体振荡器B与功率放大器连接，功率放大器与波导调制器中频输入端连接，微波源与波导调制器微波输入端连接，波导调制器与微波放大器连接，微波放大器与喇叭天线连接；微波检波器与选频放大器连接，选频放大器与下变频器A连接，石英晶体振荡器B与下变频器B连接，石英晶体振荡器A分别与下变频器A和下变频器B连接，下变频器A与带通滤波器A连接，带通滤波器A与鉴相器连接，下变频器B与带通滤波器B连接，带通滤波器B与鉴相器连接。本实用新型可实现低损耗、超高频微波幅度调制。

6. 发明授权

EP0188326B1 SIS mixer having thin-film wrap-around edge contact 失效
标题翻译： SIS混合机具有薄膜缠绕边缘接触
公开(公告)号：EP0188326B1
公开(公告)日：1991-03-13
申请号：EP86300093.1
申请日：1986-01-08
申请人： AT&T Corp.
发明人： Miller, Ronald Eugene , Stark, Antony Albert
IPC分类号： H03D7/04
CPC分类号： H03D9/0608 , Y10S505/853

7. 发明专利

GB2040623B MICROWAVE INTEGRATED CIRCUIT DEVICE 未知
公开(公告)号：GB2040623B
公开(公告)日：1983-03-23
申请号：GB7841791
申请日：1978-10-24
申请人： HITACHI LTD
IPC分类号： G01S7/03 , H03B9/14 , H03D7/02 , H03D9/06 , H01L27/00 , H03D7/04 , H03B7/14 , H03B9/12
摘要： A microwave integrated circuit device for reception wherein a microwave integrated circuit substrate is mounted on a short-circuited plane of an inner surface of a waveguide, a rectangular groove is provided in the short-circuited plane, and a mixer diode is arranged astride the groove.

8. 发明专利

DE2901782C2 未知
公开(公告)号：DE2901782C2
公开(公告)日：1981-12-03
申请号：DE2901782
申请日：1979-01-18
申请人： LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT, DE
发明人： MAURER, ROBERT, PROF. DR.-ING., 6600 SAARBRUECKEN, DE , SCHAU, WALTER, DIPL.-ING., 6602 DUDWEILER, DE
IPC分类号： H03D7/02 , H03D7/04 , H03D9/06 , H03F7/00
摘要： In a microwave circuit for a parametric upper sideband down converter with real image frequency termination conductance, including a pump circuit supplying a pump signal, a parallel circuit at its input, an intermediate frequency circuit at its output, and a reactance diode coupling the parallel circuit and intermediate frequency circuit together, the parallel circuit is tuned approximately to the frequency of the pump signal; the intermediate frequency circuit is composed of a pi filter having a series branch containing a first inductance connected in series between the diode and the output of the microwave circuit, a first shunt branch located between the diode and the inductance and containing a first capacitance and a second shunt branch located between the inductance and the output of the microwave circuit and containing a second capacitance; the microwave circuit further includes a second inductance connected in series with the reactance diode; and the portion of the microwave circuit constituted by the diode, the second inductance and the first capacitance forms a resonant circuit tuned to the frequency of the pump signal.

9. 发明专利

GB1448883A CARRIER CONVERTING EQUIPMENT 未知
公开(公告)号：GB1448883A
公开(公告)日：1976-09-08
申请号：GB5490373
申请日：1973-11-27
申请人： JAPAN BROADCASTING CORP
IPC分类号： H04N7/01 , H03C1/50 , H03D7/00 , H03D7/02 , H03D7/04 , H03D7/18 , H03D9/06 , H04N7/00 , H04N7/20
摘要： 1448883 Modulators; frequency changing NIPPON HOSO KYOKAI 27 Nov 1973 [30 Nov 1972 18 April 1973] 54903/73 Headings H3R and H3T In an arrangement for amplitude modulating a second unmodulated carrier wave with a signal which is received as an amplitude modulated first carrier wave, the two carrier waves are applied to a two-terminal non-linear device, and an amplitude modulated second carrier wave extracted. In one embodiment a frequencymodulated U.H.F. wave is first converted to an amplitude-modulated U.H.F. wave by means of circuit Q, Fig. 2a, which may comprise an off-tune parallel resonant circuit (Fig. 4a, not shown). The amplitude modulated U.H.F. signal is applied via circuit FU1 resonant at this frequency to terminal 6 of diode d which may comprise a tunnel, variable capacitance or other diode. Unmodulated V.H.F. carrier is applied to terminal 5 of diode d over seriesresonant circuit FV1: the diode d is biased by means of circuit V, and amplitude-modulated V.H.F. signal obtained at terminal 2. Circuit FV2 is resonant at the V.H.F. carrier frequency. In a second embodiment, amplitude-modulated signal is applied via terminal 4, Fig. 10, and unmodulated V.H.F. carrier via terminal 1, to diode d. Amplitude-modulated V.H.F. signal is obtained at terminal 2, across circuit F V resonant at this frequency: series-resonant shunt circuits Fm and Fi are tuned respectively to the sum and difference frequencies. The Specification also describes a modification of this circuit using a 3-dB coupler (Fig. 12, not shown) and one using a circulator (Fig. 13, not shown). The circuit may also impose preemphasis or de-emphasis.

10. 发明专利

DE2359585B2 未知
公开(公告)号：DE2359585B2
公开(公告)日：1976-05-06
申请号：DE2359585
申请日：1973-11-29
IPC分类号： H04N7/01 , H03C1/50 , H03D7/00 , H03D7/02 , H03D7/04 , H03D7/18 , H03D9/06 , H04N7/00 , H04N7/20

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