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1. 发明授权

US06462605B1 Low-jitter high-power thyristor array pulse driver and generator 失效
标题翻译：低抖动大功率晶闸管阵列脉冲驱动器和发生器
公开(公告)号：US06462605B1
公开(公告)日：2002-10-08
申请号：US09707287
申请日：2000-11-01
申请人： Roy L. Hanks
发明人： Roy L. Hanks
IPC分类号： H03K1772
CPC分类号： H03K3/57 , H03K17/105
摘要： A method and apparatus for generating low-jitter, high-voltage and high-current pulses for driving low impedance loads such as detonator fuses uses a MOSFET driver which, when triggered, discharges a high-voltage pre-charged capacitor into the primary of a toroidal current-multiplying transformer with multiple isolated secondary windings. The secondary outputs are suitable for driving an array of thyristors that discharge a precharged high-voltage capacitor and thus generating the required high-voltage and high-current pulse.
摘要翻译：用于产生用于驱动低阻抗负载（例如雷管熔断器）的低抖动，高电压和大电流脉冲的方法和装置使用MOSFET驱动器，其在被触发时将高压预充电电容器放电到具有多个隔离次级绕组的环形电流互感器变压器。次级输出适用于驱动放电预充电高压电容器并因此产生所需高电压和大电流脉冲的晶闸管阵列。

2. 发明授权

US06188267B1 Normally conducting dual thyristor 有权
标题翻译：通常导通双晶闸管
公开(公告)号：US06188267B1
公开(公告)日：2001-02-13
申请号：US09091135
申请日：1999-04-15
申请人： Jean-Louis Sanchez , Jean Jalade , Jean-Pierre Laur , Henri Foch
发明人： Jean-Louis Sanchez , Jean Jalade , Jean-Pierre Laur , Henri Foch
IPC分类号： H03K1772
CPC分类号： H01L29/749 , H01L29/7416 , H01L29/7455
摘要： The present invention relates to a component forming a normally on dual thyristor, which can be turned off by a voltage pulse on the control electrode, including a thyristor, a first depletion MOS transistor, the gate of which is connected to the source, connected between the anode gate and the cathode of the thyristor, and a second enhancement MOS transistor, the gate of which is connected to a control terminal.
摘要翻译：本发明涉及形成正常双晶闸管的部件，其可以通过控制电极上的电压脉冲而被关断，该晶闸管包括晶闸管，第一耗尽型MOS晶体管，其栅极连接到源极，晶闸管的阳极栅极和阴极，以及第二增强型MOS晶体管，其栅极连接到控制端子。

3. 发明授权

US06476669B2 Reference voltage adjustment 失效
标题翻译：参考电压调节
公开(公告)号：US06476669B2
公开(公告)日：2002-11-05
申请号：US09902206
申请日：2001-07-10
申请人： David C. McClure , Rong Yin
发明人： David C. McClure , Rong Yin
IPC分类号： H03K1772
CPC分类号： G05F3/242
摘要： A reference voltage trim circuit includes a voltage follower receiving the reference voltage to be trimmed, with one or more resistive loads providing predefined voltage shifts serially connected between the output of the voltage follower and the output of the trim circuit. The voltage follower includes a current mirror differential amplifier receiving the reference voltage at one input and the output of the voltage follower at the other input, and a transistor with a resistive load connected between the power supply voltages and receiving the output of the current mirror differential amplifier at the transistor's gate. The resistive loads provide varying preselected voltage drop and are each shunted by corresponding fuses, with the entire series of resistive loads shunted by a master fuse. To trim the reference voltage, at least the master fuse is blown, together with the fuse(s) shunting resistive loads which combine to result in the desired trim voltage. Pass gates control which end of the resistive load series is connected to the output of the voltage follower and which is connected to the output of the trim circuit. To decrement the reference voltage, a first end is connected to the output of the voltage follower and the second end is connected to trim circuit output; to increment the reference voltage, the second end of the resistive load series is connected to the voltage follower output and the first end is connected to the trim circuit output.
摘要翻译：参考电压调整电路包括接收要修整的参考电压的电压跟随器，其中一个或多个电阻负载提供串联连接在电压跟随器的输出端和微调电路的输出之间的预定电压偏移。电压跟随器包括电流反射镜差分放大器，其在一个输入处接收参考电压，并在另一个输入端接收电压跟随器的输出;以及晶体管，其电阻负载连接在电源电压之间并接收电流镜差分的输出放大器在晶体管的门。电阻负载提供变化的预选电压降，并且每个分压由对应的保险丝分流，整个电阻负载系列由主保险丝分流。为了修整参考电压，至少主保险丝与熔断器一起分流电阻性负载，结合起来产生所需的调整电压。通路控制电阻负载系列的哪一端连接到电压跟随器的输出端并连接到微调电路的输出。为了减小参考电压，第一端连接到电压跟随器的输出端，第二端连接到微调电路输出; 为了增加参考电压，电阻负载系列的第二端连接到电压跟随器输出，第一端连接到微调电路输出。

4. 发明授权

US06417726B1 Semiconductor device capable of adjusting an internal power supply potential in a wide range 失效
标题翻译：能够在宽范围内调整内部电源电位的半导体装置
公开(公告)号：US06417726B1
公开(公告)日：2002-07-09
申请号：US09846196
申请日：2001-05-02
申请人： Osamu Kitade
发明人： Osamu Kitade
IPC分类号： H03K1772
CPC分类号： G11C29/021 , G11C5/147 , G11C11/4074 , G11C29/02 , G11C2029/5004 , H02J1/04 , H02M2001/0025
摘要： A reference potential is generated according to a potential Viconst output from a constant current control circuit, and an internal power supply potential is generated based on the reference potential. Fuse elements are provided in the constant current control circuit. Since the resistance value of a resistance circuit can be adjusted, an internal power supply potential can be adjusted in a wider range than that in a conventional circuit. Reduction in yield can be prevented in the case where a threshold voltage or the like is varied.
摘要翻译：根据来自恒定电流控制电路的潜在Viconst输出产生参考电位，并且基于参考电位产生内部电源电位。在恒流控制电路中提供保险丝元件。由于可以调节电阻电路的电阻值，所以可以在比现有电路更宽的范围内调整内部电源电位。在阈值电压等变化的情况下，可以防止产量的降低。

5. 发明授权

US06710639B2 Emitter turn-off thyristors and their drive circuits 失效
标题翻译：发射极关断晶闸管及其驱动电路
公开(公告)号：US06710639B2
公开(公告)日：2004-03-23
申请号：US10378606
申请日：2003-03-05
申请人： Oin Huang , Bin Zhang
发明人： Oin Huang , Bin Zhang
IPC分类号： H03K1772
CPC分类号： H03K17/567 , H01L23/60 , H01L27/0259 , H01L29/41716 , H01L29/744 , H01L2924/0002 , H01L2924/00
摘要： A family of emitter turn-off thyristors and their drive circuit comprise a gate turn-on (GTO) thyristor, a first switch, the drain of the first switch being connected to the cathode of the GTO thyristor, and a second switch connected between the gate of the GTO thyristor and the source of the first switch. The first switch consists of many paralleled metal oxide semiconductor field effect transistors (MOSFETs). The anode of the GTO thyristor and the source of the first switch serve as the annode and the cathode, respective, of the emitter turn-off thyristor. The emitter turn-off thyristor has four control electrodes: the gate of the GTO thyristor, the control electrode of the second switch, the gate of the first switch, and the cathode of the GTO thyristor. The drive circuit comprises a current source circuit, a voltage clamp circuit, a current direction detector, and a control circuit. The ETO thyristor further comprises a current sensing and over-current detector circuit. The first switch is packaged in a printed circuit board.
摘要翻译：发射极关断晶闸管及其驱动电路系列包括栅极导通（GTO）晶闸管，第一开关，第一开关的漏极连接到GTO晶闸管的阴极，以及第二开关，其连接在 GTO晶闸管的栅极和第一个开关的源极。第一个开关由许多并联的金属氧化物半导体场效应晶体管（MOSFET）组成。 GTO晶闸管的阳极和第一开关的源极用作发射极截止晶闸管的环路和阴极。发射极截止晶闸管具有四个控制电极：GTO晶闸管的栅极，第二开关的控制电极，第一开关的栅极和GTO晶闸管的阴极。驱动电路包括电流源电路，电压钳位电路，电流方向检测器和控制电路。 ETO晶闸管还包括电流检测和过电流检测器电路。第一个开关封装在印刷电路板中。

6. 发明授权

US06483370B1 Circuit for controlling a power MOS transistor and detecting a load in series with the transistor 有权
标题翻译：用于控制功率MOS晶体管和检测与晶体管串联的负载的电路
公开(公告)号：US06483370B1
公开(公告)日：2002-11-19
申请号：US09619565
申请日：2000-07-19
申请人： Philippe Bienvenu , Antoine Pavlin
发明人： Philippe Bienvenu , Antoine Pavlin
IPC分类号： H03K1772
CPC分类号： H03K17/063 , H03K17/18
摘要： The detection of the presence of a load associated with a power MOS transistor integrated with its control circuit, using a delay determined taking into account the detection with respect to the occurrence of a turn-off control order of the power transistor, and where the filtering time is controlled with the power transistor switching time.
摘要翻译：检测与其控制电路集成的功率MOS晶体管相关联的负载的存在，使用考虑到关于功率晶体管的关断控制顺序的发生的检测而确定的延迟，以及滤波时间由功率晶体管切换时间控制。

7. 发明授权

US06252451B1 Switching circuit 有权
标题翻译：开关电路
公开(公告)号：US06252451B1
公开(公告)日：2001-06-26
申请号：US09375858
申请日：1999-08-17
申请人： Fabrice Guitton , Didier Magnon , Jean-Michel Simonnet , Olivier Ladiray
发明人： Fabrice Guitton , Didier Magnon , Jean-Michel Simonnet , Olivier Ladiray
IPC分类号： H03K1772
CPC分类号： H03K17/16 , H03K17/732
摘要： A one-way switching circuit of the type including a gate tun-off thyristor biased to be normally on, further includes, between the gate and a supply line, a capacitor and a controllable switch connected in parallel.
摘要翻译：这种类型的单向开关电路包括被偏置为通常导通的栅极截止晶闸管，还包括在栅极和电源线之间，并联连接的电容器和可控开关。

8. 发明授权

US06417719B1 Apparatus and method for isolating a trigger circuit of a silicon-controlled rectifier 有权
标题翻译：用于隔离可控硅整流器的触发电路的装置和方法
公开(公告)号：US06417719B1
公开(公告)日：2002-07-09
申请号：US09797265
申请日：2001-02-28
申请人： David R. Deam
发明人： David R. Deam
IPC分类号： H03K1772
CPC分类号： H03K17/08144 , G02B6/43 , H03K17/79 , H03K2217/0036
摘要： An apparatus for isolating driver circuits from silicon-controlled rectifier (SCR) circuits in an electric switch. The driver circuits are located on a driver-board, which includes an infrared (IR) emitter. The SCR circuits are located on a SCR switch-board, which includes an IR receiver. An insulating body is positioned between the driver-board and the switch-board. The insulating body encloses a light-pipe to optically link the infrared emitter to the infrared detector. Control signals can be communicated from the driver circuits to the SCR circuits via the IR emitter, the light-pipe, and the IR receiver.
摘要翻译：一种用于将驱动电路与电开关中的可控硅整流器（SCR）电路隔离的装置。驱动器电路位于驱动器板上，其包括红外（IR）发射器。 SCR电路位于SCR开关板上，其中包括一个IR接收器。绝缘体位于驱动板和开关板之间。绝缘体包围光管以将红外发射器光学连接到红外探测器。控制信号可以通过IR发射器，光管和IR接收器从驱动电路传送到SCR电路。

9. 发明授权

US06404265B1 Highly efficient driver circuit for a solid state switch 失效
标题翻译：高效的固态开关电路
公开(公告)号：US06404265B1
公开(公告)日：2002-06-11
申请号：US09373502
申请日：1999-08-13
申请人： Louis A. Guido, Jr. , Harold R. Schnetzka
发明人： Louis A. Guido, Jr. , Harold R. Schnetzka
IPC分类号： H03K1772
CPC分类号： H02M1/08
摘要： Systems consistent with this invention comprise a trigger circuit for triggering a silicon device having a control terminal, where the silicon device is subject to variations in the intrinsic control requirements. The trigger circuit comprises a source of direct current (DC) supply voltage, and a DC-to-DC current mode Buck converter for converting the supply voltage into an output DC current not subject to undesired variations due to variations in the supply voltage, the Buck converter supplying to the control terminal a minimum current to turn on the silicon device despite the variations in the intrinsic control requirements. The silicon device may comprise a silicon controlled rectifier (SCR) with a gate terminal, an anode terminal, and a cathode terminal, and wherein the control terminal is the gate terminal, and wherein the variations in the intrinsic control requirements are variations in the intrinsic gate-to-cathode control current and voltage requirements.
摘要翻译：与本发明一致的系统包括用于触发具有控制端子的硅器件的触发电路，其中硅器件受到固有控制要求的变化。触发电路包括直流（DC）电源电压源和DC-DC电流模式降压转换器，用于将电源电压转换成不受供电电压变化引起的不期望的变化的输出直流电流，降压转换器为控制端子提供最小电流以打开硅器件，尽管内部控制要求有变化。硅器件可以包括具有栅极端子，阳极端子和阴极端子的可控硅整流器（SCR），并且其中控制端子是栅极端子，并且其中本征控制要求的变化是内在的门到阴极控制电流和电压要求。

10. 发明授权

US06323718B1 Normally-on bidirectional switch 有权
标题翻译：常开双向开关
公开(公告)号：US06323718B1
公开(公告)日：2001-11-27
申请号：US09209381
申请日：1998-12-10
申请人： Pierre Rault , Eric Bernier
发明人： Pierre Rault , Eric Bernier
IPC分类号： H03K1772
CPC分类号： H01L27/0641 , H01L27/0817 , H01L29/747 , H03K17/08144 , H03K17/725 , H03K2217/0036
摘要： The present invention relates to a normally-on bidirectional switch, including, in parallel between two power terminals of the switch, a first cathode-gate thyristor, the anode of which is connected to a first power terminal, a second anode-gate thyristor, the anode of which is connected to a second power terminal, and a resistor in series with a controllable switch, the midpoint of this series association being connected to the respective gates of the two thyristors. The present invention also provides a monolithic integration of the switch.
摘要翻译：本发明涉及一种常开双向开关，其包括在开关的两个电源端子之间并联的第一阴极栅极晶闸管，其阳极连接到第一电源端子，第二阳极栅极晶闸管，其阳极连接到第二电源端子和与可控开关串联的电阻器，该串联联接的中点连接到两个晶闸管的相应栅极。本发明还提供了开关的单片集成。

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