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1. 发明授权

US06351003B1 Solid-state imaging device and manufacturing method therefor 有权
公开(公告)号：US06351003B1
公开(公告)日：2002-02-26
申请号：US09290122
申请日：1999-04-12
申请人： Toshihiro Kuriyama
发明人： Toshihiro Kuriyama
IPC分类号： H01L31103
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate of a first conductivity type; a photo-receiving portion of a second conductivity type formed in the semiconductor substrate; a detecting portion of the second conductivity type formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate; a transfer gate electrode formed on the insulating film at lest between the photo-receiving portion and the detecting portion; and a read-out circuit, which is electrically connected to the detecting portion. A diffusion region of the same conductivity type as the detecting portion is formed in a region of the semiconductor substrate that is adjacent to an end of the detecting portion near the gate electrode and separate from the photo-receiving portion. An impurity concentration in the photo-receiving portion and an impurity concentration in the diffusion region are lower than an impurity concentration in the detecting portion. With this solid-state imaging device and with the method for producing the same, a solid-state imaging device is provided that reduces crystal defects in the photo-receiving portion and improves the output image quality.

2. 发明授权

US06649951B2 Light-receiving element and photoelectric conversion device 有权
标题翻译：光接收元件和光电转换装置
公开(公告)号：US06649951B2
公开(公告)日：2003-11-18
申请号：US10284296
申请日：2002-10-31
申请人： Hiraku Kozuka , Toru Koizumi , Koji Sawada
发明人： Hiraku Kozuka , Toru Koizumi , Koji Sawada
IPC分类号： H01L31103
CPC分类号： H01L27/14603 , H01L31/0352 , H01L31/103
摘要： In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element comprises a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.
摘要翻译：为了减小光接收元件的电容，本发明提供了一种光接收元件，其包括第一导电类型的第一半导体区域和设置在第一半导体区域上的第二导电类型的第二半导体区域，设置在第二半导体区域和绝缘膜之间的第一导电类型的第三半导体区域和设置在第二半导体区域中的第二导电类型的电极区域，其中第二半导体区域不在第二半导体区域上方并连接到由导体组成的阳极或阴极电极。

3. 发明授权

US06310282B1 Photovoltaic conversion element and a dye-sensitizing photovoltaic cell 有权
标题翻译：光电转换元件和染料敏化光伏电池
公开(公告)号：US06310282B1
公开(公告)日：2001-10-30
申请号：US09527521
申请日：2000-03-16
申请人： Masatoshi Sakurai , Katsuyuki Naito , Akihiro Horiguchi , Hiroyasu Sumino , Maki Yonetsu
发明人： Masatoshi Sakurai , Katsuyuki Naito , Akihiro Horiguchi , Hiroyasu Sumino , Maki Yonetsu
IPC分类号： H01L31103
CPC分类号： H01M14/005 , G02F1/1523 , G02F2001/13324 , H01G9/2004 , H01G9/2031 , H01G9/2063 , H01G9/2068 , H01G9/2072 , H01L27/3227 , H01L51/0059 , H01L51/0064 , H01L51/0081 , H01L51/0086 , H01L51/4226 , H01L51/5096 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： A photovoltaic conversion element comprising, a first transparent electrode, a transparent semiconductor layer disposed on the first transparent electrode, a sensitizing dye adsorption portion which is disposed on the surface of the transparent semiconductor layer, a carrier transport layer formed on the sensitizing dye adsorption portion, and a second transparent electrode disposed on the carrier transport layer, wherein the sensitizing dye adsorption portion comprises sensitizing dyes of plural kinds of color, which are adsorbed on a plurality of surface regions of the semiconductor layer.
摘要翻译：一种光电转换元件，包括第一透明电极，设置在第一透明电极上的透明半导体层，设置在透明半导体层的表面上的增感染料吸附部分，形成在敏化染料吸附部分上的载体输送层以及设置在所述载体输送层上的第二透明电极，其中所述增感染料吸附部分包含吸附在所述半导体层的多个表面区域上的多种颜色的增感染料。

4. 发明授权

US06483163B2 Photoelectric conversion devices and photoelectric conversion apparatus employing the same 有权
标题翻译：光电转换装置及采用该光电转换装置的光电转换装置
公开(公告)号：US06483163B2
公开(公告)日：2002-11-19
申请号：US09729469
申请日：2000-12-04
申请人： Tadao Isogai , Satoshi Suzuki
发明人： Tadao Isogai , Satoshi Suzuki
IPC分类号： H01L31103
CPC分类号： H01L27/14643 , H01L27/14609 , H01L31/068 , Y02E10/547
摘要： A photoelectric conversion device comprises a semiconductor substrate, a same-dopant-type semiconductor layer, a photodiode having a charge-accumulation region, a JFET (which has a gate region, a source region, a channel region, and a drain region, the drain region electrically connected to the substrate 100), a transfer gate for transferring a charge from the photodiode to the gate region, and a reset drain having a charge-drain region for draining excess charges generated by the photodiode, the reset drain also controlling the electric potential of the gate region. Two overflow-control regions are included, one at the boundary between the charge-accumulation region and the charge-drain region within the device, one at the boundary between the charge-accumulation region and the charge-drain region of an adjacent device. Two reset gates are also provided, one at the boundary between the JFET gate and the reset drain within a device and one at the boundary between the JFET gate and a reset drain of a n adjacent device. The layer is preferably more lightly doped relative to the substrate, such that sensitivity to longer wavelengths is increased. When used as a pixel in a pixel matrix, the device (and each pixel) may be surrounded by filled trenches extending downward from the top surface of the layer. The trenches may be filled so as to decrease the resistance between the substrate and the layer, and so as to reduce or eliminate cross-talk between pixels.
摘要翻译：光电转换装置包括半导体衬底，相同掺杂剂型半导体层，具有电荷蓄积区的光电二极管，JFET（具有栅极区，源极区，沟道区和漏极区，漏极区域，电连接到衬底100），用于将电荷从光电二极管传送到栅极区域的转移栅极和具有用于排出由光电二极管产生的过量电荷的电荷 - 漏极区域的复位漏极，复位漏极还控制栅极区域的电位。包括两个溢出控制区域，一个位于器件内的电荷累积区域和电荷 - 漏极区域之间的边界处，一个位于相邻器件的电荷累积区域和电荷 - 漏极区域之间的边界处。还提供两个复位栅极，一个位于器件内的JFET栅极和复位漏极之间的边界处，一个位于JFET栅极和n个相邻器件的复位漏极之间的边界处。该层优选相对于衬底更轻掺杂，使得对较长波长的灵敏度增加。当用作像素矩阵中的像素时，器件（和每个像素）可以被从层的顶表面向下延伸的填充沟槽包围。可以填充沟槽以减小衬底和层之间的电阻，并且从而减少或消除像素之间的串扰。

5. 发明授权

US06259099B1 Ultra-thin ionizing radiation detector and methods for making same 失效
标题翻译：超薄电离辐射探测器及其制作方法
公开(公告)号：US06259099B1
公开(公告)日：2001-07-10
申请号：US09091656
申请日：1998-09-18
申请人： François Foulon , Serge Spirkovitch , Lionel Babadjian
发明人： François Foulon , Serge Spirkovitch , Lionel Babadjian
IPC分类号： H01L31103
CPC分类号： H01L31/115
摘要： Ultra-thin ionizing radiation detector, and processes of manufacturing such detector. The detector includes a stack made up of a substrate, an insulting layer and a thin superficial layer of silicon, a detection diode being fabricated in the superficial layer.
摘要翻译：超薄电离辐射探测器及其制造方法。检测器包括由衬底，绝缘层和薄的表面层构成的堆叠，在表层中制造检测二极管。

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