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1. 发明授权

US06297443B1 Thin film photoelectric transducer 有权
标题翻译：薄膜光电传感器
公开(公告)号：US06297443B1
公开(公告)日：2001-10-02
申请号：US09269400
申请日：1999-03-26
申请人： Akihiko Nakajima , Masashi Yoshimi , Takayuki Suzuki , Kenji Yamamoto
发明人： Akihiko Nakajima , Masashi Yoshimi , Takayuki Suzuki , Kenji Yamamoto
IPC分类号： H01L310368
CPC分类号： H01L31/076 , H01L31/02363 , H01L31/02366 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A thin film photoelectric converter includes a polycrystalline photoelectric conversion layer (4) and a metal thin film (3) covering one main surface of the polycrystalline photoelectric layer. Polycrystalline photoelectric conversion layer (4) has an average thickness in the range from 0.5 to 20 &mgr;m and at least one of main surfaces of polycrystalline photoelectric conversion layer (4) has a textured surface structure. The textured structure has fine unevenness with level differences smaller than half of the thickness of polycrystalline photoelectric conversion layer (4) and substantially in the range from 0.05 to 3 &mgr;m.
摘要翻译：薄膜光电转换器包括多晶光电转换层（4）和覆盖多晶光电层的一个主表面的金属薄膜（3）。多晶光电转换层（4）的平均厚度为0.5〜20μm，多晶光电转换层（4）的至少一个主表面具有纹理表面结构。纹理结构具有微小的不均匀性，其水平差小于多晶光电转换层（4）的厚度的一半，并且基本上在0.05至3μm的范围内。

2. 发明授权

US06653554B2 Thin film polycrystalline solar cells and methods of forming same 有权
标题翻译：薄膜多晶太阳能电池及其形成方法
公开(公告)号：US06653554B2
公开(公告)日：2003-11-25
申请号：US10097265
申请日：2002-03-15
申请人： Shunichi Ishihara
发明人： Shunichi Ishihara
IPC分类号： H01L310368
CPC分类号： H01L31/03682 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A thin film polycrystalline solar cell which includes a substrate, a first semiconductor layer provided on the substrate and including Si highly doped with a conductivity-type controlling impurity, a second semiconductor layer provided on the first semiconductor layer and including polycrystalline Si slightly doped with a conductivity-type controlling impurity of the same conductivity-type as that of the first semiconductor layer, and a third semiconductor layer provided on the second semiconductor layer and highly doped with a conductivity-type controlling impurity of a conductivity-type opposite to that of the impurities for the doping of the first and the second semiconductor layers. Crystal grains grown from crystal nuclei generated in the first semiconductor layer are continuously grown to form the first and second semiconductor layers, are horizontally grown to contact neighboring crystal grains, and are perpendicularly grown to form an interface with the third semiconductor layer.
摘要翻译：一种薄膜多晶太阳能电池，其包括基板，设置在所述基板上的第一半导体层，并且包括高度掺杂有导电型控制杂质的Si，设置在所述第一半导体层上的第二半导体层，并且包括稍微掺杂有具有与第一半导体层相同的导电类型的导电型控制杂质，以及设置在第二半导体层上并且高度掺杂导电型控制杂质的第三半导体层，该第三半导体层具有与用于掺杂第一和第二半导体层的杂质。在第一半导体层中产生的从晶核生长的晶粒连续生长以形成第一和第二半导体层，水平生长以接触相邻的晶粒，并且垂直生长以形成与第三半导体层的界面。

3. 发明授权

US06614053B1 Active matrix substrate, electrooptical device, and method of producing active matrix substrate 有权
标题翻译：有源矩阵基板，电光装置，以及生产有源矩阵基板的方法
公开(公告)号：US06614053B1
公开(公告)日：2003-09-02
申请号：US09524275
申请日：2000-03-13
申请人： Satoshi Takenaka
发明人： Satoshi Takenaka
IPC分类号： H01L310368
CPC分类号： H01L27/14609 , H01L27/14687
摘要： The invention provides an active matrix substrate which allows the film quality of a MIS transistor to be evaluated easily and accurately, an electrooptical device using such an active matrix substrate, and a method of producing such an active matrix substrate. On an active matrix substrate, a film quality evaluation region with a size of 1 mm square is formed at a location where neither an image display area, a scanning line driving circuit, a data line driving circuit, nor a signal line is formed. A semiconductor film (silicon film) for film quality evaluation is formed in the film quality evaluation region using the same layer as a heavily doped source/drain region of a TFT and doped with the same impurity at the same concentration as the source/drain region. The semiconductor film for film quality evaluation is exposed through an opening formed through interlayer insulating films, so that it is possible to immediately start evaluation of the film equality.
摘要翻译：本发明提供了一种允许MIS晶体管的膜质量容易且准确地评估的有源矩阵基板，使用这种有源矩阵基板的电光装置，以及制造这种有源矩阵基板的方法。在有源矩阵基板上，在图像显示区域，扫描线驱动电路，数据线驱动电路以及信号线都不形成的位置形成尺寸为1mm见方的膜质量评价区域。在膜质量评价区域中，使用与TFT的重掺杂源极/漏极区域相同的层并且以与源极/漏极区域相同的浓度掺杂相同的杂质形成用于膜质量评估的半导体膜（硅膜）。用于膜质量评估的半导体膜通过由层间绝缘膜形成的开口露出，从而可以立即开始评估膜的等级。

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