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1. 发明授权

US06376880B1 High-speed lateral bipolar device in SOI process 有权
标题翻译： SOI工艺中的高速横向双极器件
公开(公告)号：US06376880B1
公开(公告)日：2002-04-23
申请号：US09406451
申请日：1999-09-27
申请人： John C. Holst
发明人： John C. Holst
IPC分类号： H01L2781
CPC分类号： H01L29/66265 , H01L29/7317
摘要： A lateral bipolar transistor includes a semiconductor layer overlying an electrically insulating material and an insulating layer overlying a central portion of the semiconductor layer. A contact hole resides in the insulating layer and a conductive material overlies the insulating layer and makes electrical contact with the semiconductor layer through the contact hole, thereby forming a base contact. The semiconductor layer has a first conductivity type in a central region which substantially underlies the conductive material, and has a second conductivity type in regions adjacent the central region. The first region forms a base region and the adjacent regions form a collector region and an emitter region, respectively. A method of forming a lateral bipolar transistor device is also disclosed. The method includes forming a semiconductor layer over an insulating material and forming an insulating layer over the semiconductor material. A base contact hole is then formed in the insulating layer and a conductive base contact region is formed over a portion of the insulating layer. The base contact region overlies the base contact hole and makes an electrical connection to a middle portion of the semiconductor layer, which corresponds to a base region. Lastly, a collector region and an emitter region are formed on opposite sides of the base region such that the collector region and the emitter region are adjacent the base region, respectively.
摘要翻译：横向双极晶体管包括覆盖电绝缘材料的半导体层和覆盖半导体层中心部分的绝缘层。接触孔位于绝缘层中，导电材料覆盖绝缘层，并通过接触孔与半导体层电接触，从而形成基极接触。半导体层在中心区域具有基本上位于导电材料下面的第一导电类型，并且在邻近中心区域的区域中具有第二导电类型。第一区域形成基极区域，相邻区域分别形成集电极区域和发射极区域。还公开了一种形成横向双极晶体管器件的方法。该方法包括在绝缘材料上形成半导体层并在半导体材料上形成绝缘层。然后在绝缘层中形成基部接触孔，并且在绝缘层的一部分上形成导电性基极接触区域。基部接触区域覆盖在基部接触孔上，并且与半导体层的与基部区域对应的中间部分形成电连接。最后，在基极区域的相对侧上形成集电极区域和发射极区域，使得集电极区域和发射极区域分别与基极区域相邻。

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