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1. 发明授权

US07071518B2 Schottky device 失效
标题翻译：肖特基装置
公开(公告)号：US07071518B2
公开(公告)日：2006-07-04
申请号：US10856602
申请日：2004-05-28
申请人： Vijay Parthasarathy , Vishnu K. Khemka , Ronghua Zhu , Amitava Bose
发明人： Vijay Parthasarathy , Vishnu K. Khemka , Ronghua Zhu , Amitava Bose
IPC分类号： H01L27/772
CPC分类号： H01L27/0727 , H01L27/0629
摘要： A regular Schottky diode or a device that has a Schottky diode characteristic and an MOS transistor are coupled in series to provide a significant improvement in leakage current and breakdown voltage with only a small degradation in forward current. In the reverse bias case, there is a small reverse bias current but the voltage across the Schottky diode remains small due the MOS transistor. Nearly all of the reverse bias voltage is across the MOS transistor until the MOS transistor breaks down. This transistor breakdown, however, is not initially destructive because the Schottky diode limits the current. As the reverse bias voltage continues to increase the Schottky diodes begins to absorb more of the voltage. This increases the leakage current but the breakdown voltage is a somewhat additive between the transistor and the Schottky diode.
摘要翻译：正交肖特基二极管或具有肖特基二极管特性和MOS晶体管的器件串联耦合以提供泄漏电流和击穿电压的显着改进，只有正向电流的降低很小。在反向偏置情况下，存在小的反向偏置电流，但由于MOS晶体管，肖特基二极管两端的电压保持较小。几乎所有的反向偏置电压都跨越MOS晶体管，直到MOS晶体管故障。然而，该晶体管击穿不是最初的破坏性，因为肖特基二极管限制了电流。随着反向偏压持续增加，肖特基二极管开始吸收更多的电压。这增加了漏电流，但是在晶体管和肖特基二极管之间的击穿电压稍微相加。

2. 发明授权

US08304843B2 Tunnel field effect transistor with improved subthreshold swing 有权
标题翻译：隧道场效应晶体管具有改善的亚阈值摆幅
公开(公告)号：US08304843B2
公开(公告)日：2012-11-06
申请号：US12877909
申请日：2010-09-08
申请人： Anne S. Verhulst
发明人： Anne S. Verhulst
IPC分类号： H01L27/772 , H01L21/336
CPC分类号： H01L29/7391 , B82Y10/00 , H01L29/0665 , H01L29/42368 , H01L29/66356
摘要： The present disclosure provides a tunnel field effect transistor (TFET) device comprising at least following segments: a highly doped drain region, a lowly doped up to undoped channel region being in contact with the drain region, the channel region having a longitudinal direction, a highly doped source region in contact with the channel region, the contact between the source region and the channel region forming a source-channel interface, a gate dielectric and a gate electrode covering along the longitudinal direction at least part of the source and channel regions, the gate electrode being situated onto the gate dielectric, not extending beyond the gate dielectric, wherein the effective gate dielectric thickness tgd,eff of the gate dielectric is smaller at the source-channel interface than above the channel at a distance from the source-channel interface, the increase in effective gate dielectric thickness tgd,eff being obtained by means of at least changing the physical thickness tgd of the gate dielectric.
摘要翻译：本公开提供了一种隧道场效应晶体管（TFET）器件，其至少包括以下部分：高掺杂漏极区，与漏极区接触的低掺杂直至未掺杂沟道区，沟道区具有纵向方向，与沟道区接触的高掺杂源极区，形成源极 - 沟道界面的源极区和沟道区之间的接触，栅极电介质和栅极电极沿着纵向覆盖至少部分源极和沟道区，栅极电极位于栅极电介质上，不延伸超过栅极电介质，其中栅极电介质的有效栅极电介质厚度tgd，eff在源极沟道界面处比在源极通道一定距离处比沟道上方更小接口，通过至少改变物理厚度t获得有效栅极电介质厚度tgd，eff的增加 gd的栅极电介质。

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