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1. 发明授权

US5343052A Lateral insulated gate bipolar transistor 失效
标题翻译：横向绝缘栅双极晶体管
公开(公告)号：US5343052A
公开(公告)日：1994-08-30
申请号：US917990
申请日：1992-07-24
申请人： Tosifumi Oohata , Mutsuhiro Mori , Naoki Sakurai
发明人： Tosifumi Oohata , Mutsuhiro Mori , Naoki Sakurai
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/739 , H01L21/76 , H01L21/425 , H01L27/38
CPC分类号： H01L29/405 , H01L29/0696 , H01L29/41716 , H01L29/7393
摘要： A lateral insulated-gate bipolar transistor has a drift region having therein a base layer and a collector layer. An emitter layer is formed in the base layer. A gate electrode structure, comprising a control electrode and gate insulating layer, contacts the base layer, and also contacts the drift layer and the emitter layer. An emitter electrode contacts the emitter layer, and also the base layer, and a collector electrode contacts the collector layer. The emitter and collector electrodes are elongate and the ratio of their resistances per unit length is in the range of 0.5 to 2.0. This reduces the possibility of a localized high current density along the electrodes, thereby reducing the risk of latch-up due to parasitic thyristors. The collector and emitter electrodes may be of the same width and thickness, or of different widths and thicknesses, or may each have an auxiliary part (for example, in a multi-layer wiring arrangement), so that their resistances per unit length are in the desired range. A plurality of such transistors may be fabricated together in an array.
摘要翻译：横向绝缘栅双极晶体管具有其中具有基极层和集电极层的漂移区域。在基层中形成发射极层。包括控制电极和栅极绝缘层的栅电极结构接触基极层，并且还接触漂移层和发射极层。发射极电极与发射极层接触，并且基极层也接触集电极电极。发射极和集电极是细长的，其单位长度的电阻比在0.5至2.0的范围内。这降低沿着电极的局部高电流密度的可能性，从而降低由寄生晶闸管引起的闩锁的风险。集电极和发射极可以具有相同的宽度和厚度，或者具有不同的宽度和厚度，或者可以各自具有辅助部分（例如，在多层布线布置中），使得其每单位长度的电阻为所需范围。多个这样的晶体管可以一起制成阵列。

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